79 results about "Electric field modulation" patented technology

An angular displacement sensor based on electric field modulation. The sensor comprises a stator base (1) and a rotor base (2) which are arranged one above the other. One or more pole-pair units are provided on the side surface of the stator base (1) facing the rotor base (2), each pole-pair unit comprises at least three sensing electrode groups which are arranged at intervals circumferentially around the center of the stator base (1), and each sensing electrode group comprises one excitation electrode (1-1) and one sensing electrode (1-2) which are spaced apart circumferentially around the center of the stator base (1); and modulation unit groups, the number of which matches that of pole-pair units and which can respectively correspond to the pole-pair units circumferentially around the center of the rotor base (2) are provided on the side surface of the rotor base (2) facing the stator base (1), each modulation unit group comprises one modulation unit F (2-1) and one modulation unit G (2-2) which are arranged circumferentially around the center of the rotor base (2), and the modulation unit F (2-1) can correspond to at least one sensing electrode group in the pole-pair units circumferentially around the center of the rotor base (2).

The invention discloses a high-linearity AlGaN / GaN device based on a ferroelectric medium, a conductor layer and an AlGaN layer are arranged on a GaN layer, a barrier layer is formed, a ferroelectric film is arranged between a grid electrode and the barrier layer, and the high-linearity AlGaN / GaN device based on the ferroelectric medium is obtained. In the prior art, the linearity of a device is improved to a certain extent, but the complexity of the device is increased due to higher design requirements on a process and an epitaxial material. According to the invention, a layer of ferroelectric medium is introduced under the gate, and polarization regulation and control of the AlGaN / GaN HEMT are realized by utilizing the characteristic that the polarization intensity of the ferroelectric medium can be modulated by an external electric field and an extremely high dielectric constant, so that relatively flat transconductance is obtained. According to the high-linearity AlGaN / GaN HEMT device, the ferroelectric material is introduced and the parameters of the ferroelectric material are optimized, so that the electrical characteristics of the AlGaN / GaN HEMT device are successfully regulated and controlled, the peak transconductance is broadened, and the high-linearity AlGaN / GaN HEMT device based on the ferroelectric gate medium is realized. Therefore, an important theoretical and experimental basis is provided for further improving the performance of the device and expanding the application field.

The application provides a weak ocean electric field measurement system with high Q quartz crystal oscillator frequency conversion resonance matching, which realizes high sensitivity and super high signal-to-noise ratio of seawater electric field measurement with small volume / interval. The application uses switch to alternately turn on and off metal mesh and shield cover, improves seawater electric field modulation frequency, realizes high Q resonance matching by parallel connection of multiple quartz crystal oscillators with the same characteristics, obtains passive amplification, greatly improves high-frequency modulation electric field amplitude and signal-to-noise ratio, so that the small volume / interval sensor can also obtain large electric field response. The electric field measurement method has the characteristics of small volume, high sensitivity and high signal-to-noise ratio, and can not only be flexibly arranged in various very weak electric field detection, but also can constitute a phased array electric field sensor to measure long-distance seawater electric field distribution, greatly expanding the field of ocean electric field measurement.

The present invention discloses a field effect transistor with an electric field modulation structure and a manufacturing method thereof. The field effect transistor includes: a first conductive type drift region and a second conductive type well region located in a second conductive type epitaxial layer, and a first conductive type source region located in the second conductive type well region; an insulating layer and a first conductive type drain region located in the first conductive type drift region, and the insulating layer is located between the first conductive type source region and the first conductive type drain region; a stepped conductive material located in the insulating layer, the stepped conductive material including N-level conductive materials, and the depth decreases from the first-level conductive material to the N-th-level conductive material; the present invention integrates an electric field modulation structure in a semiconductor body without affecting the frequency characteristics of the device, which can not only effectively modulate the electric field distribution and improve the blocking characteristics, but also increase the doping concentration of the drift region, thereby improving the conduction characteristics.

The invention belongs to the field of electrical engineering, and particularly relates to a novel driving method based on LTD low-temperature high-efficiency electric field driving, which comprises the following steps: performing active PFC on wide-range alternating current input to generate stable high-voltage direct current; performing high-frequency switch conversion and fine voltage modulation to generate dynamic electric field modulation voltage; the light is applied to the LED array to promote the LED array to emit light efficiently; and the LED state is monitored in real time and fed back and adjusted, and optimal electric field driving is maintained. The system comprises an input PFC module, an electric field modulation driving unit, an LED array, a sensing feedback module and a main control unit. According to the scheme, ultrahigh electro-optical conversion efficiency is achieved, energy consumption and working temperature are remarkably reduced, the service life is prolonged, the electric energy quality is improved, PFC is high, THD is low, stroboflash is eliminated, and a new path is provided for intelligent lighting.

This invention discloses a method for oxygen vacancy control in Ga2O3 thin films based on vertical electric field modulation, belonging to the field of photoelectric conversion semiconductor materials. The method includes: 1) Ga2O3 thin film and device fabrication, 2) ionic liquid droplet addition, and 3) application of a vertical electric field for modulation. This invention achieves oxygen vacancy position modulation in Ga2O3 thin films through the action of a strong electric field, deepening the controllability of the photoelectric conversion performance of Ga2O3 thin films and demonstrating new possibilities for the construction and application of Ga2O3 thin film photodetectors. This invention not only provides a new approach and direction for solving the current difficulties of low response frequency and high static power consumption in Ga2O3 thin films, but also offers strong controllability, high modulation efficiency, and quantifiability, making it highly applicable.

This application relates to an optoelectronic logic gate device and its logic control method. The optoelectronic logic gate device includes: a substrate, a waveguide layer, an upper cladding layer, an h-BN nanosheet, a semiconductor photoresponse layer, and source and drain electrodes deposited at both ends of the semiconductor photoresponse layer. The waveguide layer includes a first waveguide, a second waveguide, and a third waveguide. The semiconductor photoresponse layer is stacked directly above the h-BN nanosheet by dry transfer, forming a high-strain region on the left, a no-strain region in the middle, and a high-strain region on the right. The high-strain region on the left corresponds to the first waveguide, the no-strain region in the middle corresponds to the second waveguide, and the high-strain region on the right corresponds to the third waveguide. The device realizes all-optical input OR (or gate) and XOR (exclusive or non-or gate) logic functions in a single device without the need for additional electric field modulation.

This invention provides an image sensor, a pixel structure, and a method for manufacturing the same. The pixel structure includes a photoelectric conversion region disposed in a semiconductor substrate and a conductive plate disposed above it. The conductive plate covers a first region of the photoelectric conversion region and induces a hole accumulation layer on its surface by receiving a bias signal, achieving electrical pinning. A doped pinning layer is disposed in a second region outside the projection range of the conductive plate, achieving physical pinning, wherein the doping concentration of the surface doping profile of the first region is lower than that of the second region. Through the synergistic effect of electric field modulation and doping modulation, a stable potential distribution is formed on the surface of the photoelectric conversion region, effectively suppressing dark current. Because high-concentration doping is avoided in the first region, the impact of doping compensation on the potential well is reduced, thereby maintaining a large charge storage space even under pixel miniaturization conditions, improving the full-well capacity and the dynamic range and signal-to-noise ratio of the image sensor.

The invention relates to the technical field of semiconductors, and particularly discloses an MOSFET device with low grid charge and a preparation method of the MOSFET device. A LOCOS isolation layer; a P-type electric field regulation and control layer is shallowly buried under the channel; a transverse doping gradient channel; a gate dielectric layer; a main gate; a shield grid structure; the source side doping concentration of the asymmetric LDD region is 1 * 10 < 18 > cm <-3 >, the width is 0.1 mu m, and the depth is 50nm; the doping concentration of the drain side is 5 * 10 < 17 > cm <-3 >, the width is 0.15 mu m, and the depth is 50nm; a drain region is provided with a two-stage stepped groove; a source-drain heavily doped region; and the metal electrode comprises a source electrode, a main grid electrode, a shielding grid and a drain electrode. Through the synergistic effect of the shallow-buried P-type electric field regulation and control layer under the channel, the shield gate, the drain region two-stage stepped groove and the composite gate dielectric, the gate-drain coupling capacitance and the gate capacitance are reduced in principle, the Miller effect is inhibited, the ultra-thin gate and the NiSi silicide are combined to reduce the gate driving loss, meanwhile, sub-threshold electric leakage is inhibited, static and dynamic power consumption is doubly reduced, and the reliability of the device is improved. And the sensor endurance is prolonged.

This invention discloses a colloidal quantum dot dual-mode detector and its fabrication method. The colloidal quantum dot dual-mode detector comprises, from bottom to top, a substrate, a bottom electrode, a photodiode layer, an electric field modulation layer, a gain device layer, and a top electrode, stacked sequentially. Through an innovative vertically stacked bandgap design, this invention integrates a colloidal quantum dot photodiode and a multi-junction gain structure within a single device for the first time. The device intelligently modulates the direction of the internal electric field using an external bias voltage, achieving precise and rapid switching between high-gain weak-light detection and high-linearity strong-light detection modes. It also fundamentally suppresses dark current, solving the problems of excessive noise and poor stability in traditional gain devices. Furthermore, the device maintains high response speed and excellent stability while possessing a compact structure and high compatibility with existing planar processes, demonstrating excellent process compatibility and large-scale fabrication potential, providing a stable and reliable technical foundation for the development of high-resolution infrared imaging devices.

The application discloses a static self-assembly preparation method of a high-nickel ternary material nano-barium titanate core-shell structure. The technology realizes uniform coating of nano-particles on the surface of a base through electrostatic attraction by means of surface charge regulation and layer-by-layer self-assembly mechanism, that is, by immersing positively charged high-nickel ternary material into negatively charged nano-barium titanate slurry liquid. The application can obtain core-shell materials with strong binding force and controllable structure. The process is simple in operation and low in energy consumption. The barium titanate coating layer based on the coordination of the physical barrier and electric field modulation dual mechanisms effectively improves the interface stability and the electrochemical kinetic performance.

The application provides a kind of switch control metal screen modulation seawater electric field measurement system and method, realize high resolution, high signal-to-noise ratio seawater electric field measurement.The application uses metal screen to obtain seawater electric field modulation signal by switching and shielding cover intermittent on-off.Through the matching circuit of measuring electrode, the voltage and power received on the measuring electrode can be improved.Frequency conversion circuit and narrow band filter can suppress various interference and noise closer to useful signal, greatly improve signal-to-noise ratio.Lock-in amplifier further filters out noise signal, while demodulating electric field modulation signal, measures the amplitude of measured electric field.This measuring instrument system suppresses seawater electric field drift and noise, improves the reliability, repeatability, reproducibility, signal-to-noise ratio and resolution of measurement, can measure weak seawater electric field, constitutes sensor array and vector electric field measuring instrument, and is applied to more extensive field.

The invention relates to the technical field of semiconductors, and particularly discloses an ESD (Electro-Static Discharge) protection device with a turn-back type trigger mechanism and a preparation method of the ESD protection device with the turn-back type trigger mechanism. The N-type well layer and the P-type well layer are formed in the substrate; the at least one P-type doped layer is formed on the surface of the N-type well layer; at least one N-type doped layer formed on the surface of the P-type well layer; the third groove is arranged between the N-type well layer and the P-type well layer; and the suspended electric field modulation structure is arranged on the third groove. By introducing a suspended electric field modulation structure, dynamic electric field regulation and control in the SCR triggering process are realized on the premise of not increasing electric leakage of the device and not changing a main discharge path, so that the device has low triggering voltage, moderate holding voltage, excellent large-current discharge capability and good static reliability.

This invention relates to the field of liquid crystal energy-saving window device technology, and particularly to a templated polymer-stabilized cholesteric liquid crystal energy-saving window device, its preparation method, and its application. This invention combines an infrared-band polymer template with adjacent-band cholesteric liquid crystals to achieve a single-layer structure that broadens the infrared Bragg reflection bandwidth. It also combines a visible-band polymer template with cholesteric liquid crystals of different bands to achieve a single-layer structure with multi-band Bragg reflection, thereby improving device transparency and reducing cost. By applying cholesteric liquid crystals of different Bragg reflection bands to the device structure, and by controlling the energy of the transmitted light beam and the tristable switching of the scattering transparency in the visible to infrared bands through temperature and electric field modulation, the response sensitivity is improved and energy consumption is reduced.

The application discloses a kind of space electric field modulation drain, located in the drain region of three-dimensional surround gate power device;The drain includes annular ohmic contact drain metal, annular schottky contact drain metal, annular P-type oxide;Wherein, in the buffer layer of drain region, there is formed with ladder structure, from the side close to the surrounding columnar gate to the direction away from the surrounding columnar gate, the depth of step in ladder structure decreases in turn;Annular ohmic contact drain metal and annular P-type oxide are arranged on each step of ladder structure, annular P-type oxide is located at the side close to the surrounding columnar gate, and annular ohmic contact drain metal is located at the side away from the surrounding columnar gate;Annular schottky contact drain metal covers the entire drain region.The application creates a brand-new three-dimensional drain design through the depth fusion of material innovation and structural innovation, and fundamentally solves the strong electric field concentration and voltage endurance bottleneck caused by geometric structure in three-dimensional surround gate power device.

A thin film lithium-containing (TFLC) optical device is described. The TFLC optical device includes at least one electrode and a TFLC waveguide. A portion of each of the electrode(s) is in a modulation region and carries an electrode signal. The TFLC waveguide includes first, second, and third portions. The first portion is optically coupled with a first waveguide. The second portion is optically coupled with a second waveguide. The third portion is in the modulation region. An optical signal in the third portion of the TFLC waveguide is modulated by an electric field generated by the electrode signal. The TFLC waveguide includes a TFLC electro-optic material. At least a part of the first and / or second portion of the waveguide is aligned with the modulation region.

The application discloses an angular displacement sensor based on electric field modulation, which comprises a stator base and a rotor base arranged in a top-bottom mode, one or more pairs of electrodes are arranged on the side surface of the stator base and face the direction of the rotor base, the pairs of electrodes comprise at least three groups of sensing electrode groups arranged at intervals around the center of the stator base, each group of sensing electrode groups comprises one excitation electrode and one sensing electrode arranged at intervals around the center of the stator base; the rotor base is provided with a plurality of modulation unit groups on the side surface and faces the direction of the stator base, the number of the modulation unit groups is consistent with that of the pairs of electrodes, and each modulation unit group can correspond to each pair of electrodes around the center of the rotor base, each modulation unit group comprises one modulation unit F and one modulation unit G arranged around the center of the rotor base, and the modulation unit F can correspond to at least one group of sensing electrode groups in the pairs of electrodes around the center of the rotor base.

According to the semiconductor device and the preparation method thereof, a plurality of first conductive plugs are arranged in an isolation structure, gradient voltage is applied to the first conductive plugs, and a gradient electric field is formed in an area below the isolation structure, so that dynamic modulation of carrier concentration distribution is realized; therefore, the problem of mutual restriction between the on-resistance and the breakdown voltage in the traditional static doping design is solved. The gradient electric field modulation enables the device to adjust the performance parameters according to different working conditions, improves the breakdown voltage and reduces the leakage current in a high-voltage region through enhancing the carrier depletion, and reduces the on resistance and improves the current conduction capability in a low-voltage region through increasing the carrier concentration. And therefore, a single device structure can adapt to various working condition requirements.

The invention discloses a planar coaxial ring gate nano vacuum channel field emission triode device and method, and relates to the technical field of microelectronic devices and vacuum micro-nano electronics, and the device comprises an insulating substrate, a coaxial ring gate disposed on the insulating substrate, and a medium supporting region disposed around the gate. The emitting electrode and the collecting electrode are arranged on the supporting area and are coaxially arranged; a closed annular nano vacuum gap is formed between the inner edges and the outer edges of the two parts to form a transverse vacuum channel; the coaxial annular grid electrode is located in an annular area below the gap, and the coaxial annular grid electrode and the two electrodes are arranged at intervals in the vertical direction and the plane direction. Through the coaxial ring gates, the electric field modulation uniformity is enhanced, gate interception and local hot spots are suppressed, parasitic capacitance is reduced, and transconductance and GHz-level high-frequency response are improved.

The application provides a photoelectric synergic regulation and control system and method of a solid-state microwave power device, and relates to the technical field of microelectronics. A gallium nitride high electron mobility transistor chip is used to generate a microwave signal under the modulation of a gate electric field. An ultraviolet light source is used to emit ultraviolet light to the gallium nitride high electron mobility transistor chip. The photon energy of the emitted light is less than the forbidden band width of the potential barrier layer and greater than or equal to the forbidden band width of the channel layer and the buffer layer. A control unit is used to synchronously control the working time sequence of the ultraviolet light source and the gallium nitride high electron mobility transistor chip. The working pulse width of the ultraviolet light source is greater than the working pulse width of the gallium nitride high electron mobility transistor chip. The system actively suppresses defect states and increases channel carriers through a light field, improves the dynamic current capacity of the device, cooperates with an electric field to regulate the dynamic current of the device, and finally realizes the effective breakthrough of the output power density of the solid-state microwave power device.

A method includes receiving light at a light input of an electro-optic modulator device. The method includes directing the light via the light input into optical waveguides in an optical layer of an electro-optic modulator of the electro-optic modulator device. The method includes receiving a signal at an electric input of the electro-optic modulator device. The electric input is associated with an input impedance. The method includes providing the signal to an electrode structure of the electro-optic modulator. The electrode structure generates an electrical field based on the signal. The electric field modulates light in the optical waveguides to produce modulated light based on the signal. The electrode structure includes a constant impedance section associated with a second impedance less than the input impedance. The method also includes providing the modulated light based on the signal from the optical layer to one or more output optic fibers.

The invention discloses a preparation method of a low-leakage III-group nitride selective epitaxial PN junction, and belongs to the technical field of semiconductors. The method comprises the following steps of: performing graphical etching on a group III nitride template to form a trapezoidal groove, performing secondary epitaxy on group III nitride containing a p-type layer in the groove, and performing annealing to drive an acceptor to diffuse and push a junction so as to obtain the low-electric-leakage group III nitride selective region epitaxy PN junction. Wherein a trapezoidal groove structure is realized through two rounds of photoetching, so that lateral growth of a p-type material during secondary epitaxy is reduced, preferential growth in the vertical direction is promoted, and the crystal quality and acceptor concentration of a p-type layer are improved. The method has excellent process compatibility, can be widely applied to preparation of various III-group nitride devices (such as super junction structures and junction barrier Schottky diodes) based on the selected area PN junctions, can give full play to the electric field modulation effect of the selected area PN junctions, effectively improves the performance of the devices, and further promotes the development process of III-group nitride medium-high voltage power electronic devices.

The invention discloses a semiconductor structure and a preparation method thereof. The semiconductor structure comprises a substrate; the first epitaxial layer is located on the surface of one side of the substrate; the electric field modulation regions are located in the first epitaxial layer, and the top surfaces of the electric field modulation regions are located on the top surface of the first epitaxial layer; the doping type of the electric field modulation region is opposite to that of the first epitaxial layer; the second epitaxial layer is positioned on one side, away from the substrate, of the first epitaxial layer; the doping type of the second epitaxial layer is the same as that of the first epitaxial layer; the trench gate and the first source region are located in the second epitaxial layer, and the top surfaces of the trench gate and the first source region are located on the top surface of the second epitaxial layer; the doping type of the first source region is opposite to that of the second epitaxial layer; the first masking layer and the second masking layer are located in the second epitaxial layer; the doping type of the first masking layer is the same as that of the second masking layer and is opposite to that of the second epitaxial layer; the first masking layer is located between the second masking layer and the bottom surface of the second epitaxial layer, and a distance is formed between the first masking layer and the second masking layer.

Various embodiments include an apparatus and methods of use of a proximity sensor. An example apparatus includes a transducer circuit having a sensor circuit, the sensor circuit including an electrode, an electrical-signal sensing circuit, a substrate to support and at least partially enclose the transducer circuit and the electrical-signal sensing circuit, and a communication circuit. The transducer circuit converts changes in capacitance into electrical signals, the changes in capacitance being carried by the electrode and being responsive to pressure and / or electric field modulations attributable to hemodynamic or pulse-wave events. The electrical-signal sensing circuit senses the events in response to the electrical signals from the transducer circuit. The substrate can conform to a portion of a user and locate the sensor circuit sufficiently close to the user's skin for electrically sensing the hemodynamic or pulse-wave events. The communication circuit responds to the electrical-signal sensing circuit by sending data indicative of the hemodynamic monitoring.

The invention provides an enclosed shield gate field effect transistor and a manufacturing method thereof, and relates to the technical field of semiconductors. The enclosed shield gate field effect transistor comprises a silicon mesa region, a shield gate, a control gate and an oxide layer, the shield gate and the control gate surround the silicon mesa region, the shield gate, the control gate and the silicon mesa region are arranged at intervals, and the oxide layer is filled among the shield gate, the control gate and the silicon mesa region; part of the shield grid is located below the control grid, and the other part of the control grid is led out independently. According to the enclosed shield gate field effect transistor and the manufacturing method thereof provided by the invention, the electric field modulation effect is more optimized, the more uniform shield gate potential is realized, the more uniform switching characteristic is realized, the power consumption is reduced, and the local current concentration is inhibited.

The application discloses an X-band high-power wideband velocity modulation tube amplifier, comprising: an electron beam emitting module for generating a circular high-impedance high-current relativistic electron beam; a wideband injection module for externally injecting a microwave signal, absorbing the microwave signal, and preliminarily velocity modulating the high-current relativistic electron beam generated by the electron beam emitting module to convert the high-current relativistic electron beam into a gap electric field modulation electron beam; a high-frequency interaction module for further modulating the gap electric field modulation electron beam converted by the wideband injection module and generating bunching to increase the fundamental wave current modulation depth of each frequency of the high-current relativistic electron beam; and a wideband extraction module for converting the kinetic energy of the electron beam after the bunching of the high-frequency interaction module into microwave energy and coupling the microwave energy to an external circuit. The velocity modulation tube amplifier can realize high-power microwave output of corresponding frequencies and improve the working bandwidth of the velocity modulation tube amplifier in the X-band.

The application belongs to the technical field of semiconductors and provides an LDMOS power device and a preparation method thereof. The LDMOS power device comprises a semiconductor substrate, a buried oxygen region, a P-type well region, a P-type base region, a source region, a drift region, a drain region, a passivation layer, a source electrode, a gate electrode, a drain electrode and a gate extension region. A plurality of substrate grooves opposite to the drift region are arranged on the front surface of the semiconductor substrate, and a plurality of buried oxygen protruding structures matched with the substrate grooves are arranged on the back surface of the buried oxygen region. More holes are gathered by the plurality of substrate grooves, so as to introduce more electric field peaks, enhance the electric field modulation capacity of the device near the drain region, modulate the surface electric field of the LDMOS power device, improve the lateral withstand voltage of the LDMOS power device, and solve the problem of small breakdown voltage of the existing LDMOS power device.

The invention provides a manufacturing method of a semiconductor power device. The manufacturing method comprises the following steps: providing an epitaxial structure; forming a source electrode, a grid electrode and a drain electrode above the epitaxial structure; after the source electrode, the grid electrode and the drain electrode are formed, a field plate dielectric layer is formed, the field plate dielectric layer comprises at least two field plate areas arranged in the horizontal direction, and the relative dielectric constants of the at least two field plate areas are different; and a field plate metal layer is formed above the field plate dielectric layer, and the field plate metal layer at least partially covers the at least two field plate areas in the overlook direction so as to realize the electric field modulation effect of the multilayer field plate at the same height. The beneficial effects of the invention are that the single field plate metal layer achieves the effect of multiple field plate metal layers, and the process complexity is simplified; the plurality of contact holes have the same depth, and the process is simple; the relative dielectric constant of each field plate region can be selected according to design requirements; the number of the field plate areas can be selected according to design requirements.

The invention relates to the technical field of electronic measuring instrument manufacturing, and discloses a surface enhanced Raman detection system and method based on electric field regulation and control plasmon coupling. The system comprises a micro-fluidic chip assembly with a micron-order interdigital electrode, an electric field modulation driving unit, a photoelectric signal acquisition unit and a phase lock analysis and arbitration processing unit, and the electric field modulation driving unit applies periodic alternating current driving voltage to the interdigital electrode; the SERS active nanoparticles are driven by dielectrophoretic force to generate periodic aggregation and diffusion motion which is twice of the basic frequency, the phase-locked analysis and arbitration processing unit extracts the frequency doubling amplitude in the spectral signal as a concentration characterization value, and outputs a result only when a phase lag component is located in a preset effective interval. SERS signals are stripped from direct-current noise, and the measured signal-to-noise ratio and reliability are improved.

This application belongs to the field of semiconductor technology and provides a stepped LDMOS device and its fabrication method. The stepped LDMOS device includes: a semiconductor substrate, a buried oxide region, a drift region, a drain region, a P-type well region, a source region, a P-type base region, a passivation layer, a gate region, a gate extension region, a source electrode, a drain electrode, and a gate electrode. By setting the buried oxide region to be stepped, an electric field peak is generated corresponding to each step structure, thereby forming multiple holes at the corners of the step structure. According to the dielectric field enhancement principle and electric field modulation effect, the electric field of the buried oxide region is increased, thereby effectively increasing the breakdown voltage of the LDMOS device. By setting the gate extension region, a low-resistance electron channel can be formed above the drift region, thereby reducing the on-resistance of the LDMOS device, achieving the purpose of reducing the on-resistance of the device while increasing the breakdown voltage.