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Oxide semiconductor heterostructure modulated by biasing electric field, preparing method and device thereof

A technology of oxide semiconductors and heterostructures, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problems of limiting practical applications, rectification behavior does not have electric field adjustment characteristics, etc.

Active Publication Date: 2012-07-18
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, this all-oxide heterostructure only exhibits magnetic-field-tuning properties (due to the band structure of its constituent perovskite manganese oxides), and its rectifying behavior does not have electric-field-tuning properties, which limits practical applications.

Method used

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  • Oxide semiconductor heterostructure modulated by biasing electric field, preparing method and device thereof
  • Oxide semiconductor heterostructure modulated by biasing electric field, preparing method and device thereof
  • Oxide semiconductor heterostructure modulated by biasing electric field, preparing method and device thereof

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Embodiment

[0075] Example: All-Oxide Heterostructures Grown on PMN-PT Substrates (001)-0.7Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -0.3PbTiO 3 (PMN-PT) / p-La 0.7 Ca 0.3 MnO 3 / n-La 0.15 Sr 0.85 TiO 3 preparation of

[0076] 1) Preparation of hole-type perovskite manganese oxide p-La 0.7 Ca 0.3 MnO 3 Target:

[0077] Press La 0.7 Ca 0.3 MnO 3 Chemical formula ingredient, raw material is La 2 o 3 (purity: 99.99%), CaCO 3 (purity: 99.9%), MnCO 3 (Purity: 99.9%); After grinding and mixing the raw materials thoroughly, calcining at 900 degrees Celsius for 12 hours, taking out and grinding again, calcining again under the same conditions, repeating 3-4 times, and finally sintering at 1300 degrees Celsius to form La 0.7 Ca 0.3 MnO 3 target;

[0078] 2) Preparation of electronic perovskite oxide n-La 0.15 Sr 0.85 TiO 3 Target:

[0079] Press La 0.15 Sr 0.85 TiO 3 Chemical formula ingredient, raw material is La 2 o 3 (purity: 99.99%), SrCO 3 (...

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Abstract

The invention relates to a full oxide semiconductor heterostructure modulated by a biasing electric field. The semiconductor heterostructure comprises relaxation type ferroelectric single crystal (PMN-PT) substrates, hole type (p type) perovskite manganite oxide films and electronic (n type) perovskite oxide films, and the two films alternately grow on the relaxation type ferroelectric single crystal (PMN-PT) substrates, a preparing method and a device of the semiconductor heterostructure are provided. The relaxation type ferroelectric single crystal has a remarkable inverse piezoelectric effect so that the obtained semiconductor heterostructure with a novel function has a remarkable adjustable characteristic of the biasing electric field.

Description

technical field [0001] The invention relates to a full oxide semiconductor heterostructure grown on a relaxation type ferroelectric single crystal substrate, in particular to a full perovskite oxide semiconductor heterostructure which can be modulated by an external bias electric field and its preparation method. Background technique [0002] Relaxed ferroelectric single crystal ((1-y)Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -(y)PbTiO 3 , namely PMN-PT) is famous for its superior ferroelectric properties and remarkable inverse piezoelectric effect, for example, for 0.67Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -0.33PbTiO 3 , remanent susceptibility and coercive field are Pr~35μC / cm 2 and Ec ~ 2.5kV / cm. The electric polarization induced by the applied bias electric field also produces significant strain behavior, for example, for (001)-oriented 0.67Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -0.33PbTiO 3 , under an electric field gradient of 10kV / cm, the c-axis strain is 0.5%. At the same time, PMN-PT has similar structur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/96H01L21/34
Inventor 胡凤霞王晶陈岭沈保根孙继荣
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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