The invention relates to high-voltage and insulation technologies, in particular to a shortest path feature set for representing distribution of electric fields of sphere gaps. The distribution of thethree-dimensional electric fields of the sphere gaps are acquired by means of static electric field simulation computation, paths where the shortest geometric distances between every two sphere electrodes are located are defined as the shortest paths, n sampling points are equidistantly selected on the shortest paths, original data of coordinates, electric field intensity and the like of the n sampling points are extracted, electric field distribution curves of the shortest paths are plotted, the sampling points with the minimum values of the electric field intensity are used as critical points, the electric field distribution curves are divided into high-voltage sections and low-voltage sections, electric field feature quantities are defined at the high-voltage sections and the low-voltage sections, and the shortest path feature set for representing the distribution of the electric fields of the sphere gaps can be acquired according to the extracted original data and feature quantitycomputational formulas. The shortest path feature set comprises electric field intensity, electric field gradient, electric field square, electric field intensity integration, path length and electric field unevenness feature quantities. The shortest path feature set has the advantages that extraction procedures are simple, and the distribution of the electric fields of the sphere gaps can be perfectly represented by the shortest path feature set.