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523results about How to "Controlled diffusion" patented technology
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Medical system and method of use
InactiveUS20100204688A1Without the potential of carbonizing tissueSimple methodSurgical needlesSurgical instruments for heatingVapor phaseThermal energy
An instrument and method for tissue thermotherapy including an inductive heating means to generate a vapor phase media that is used for interstitial, intraluminal, intracavity or topical tissue treatment. In one method, the vapor phase media is propagated from a probe outlet to provide a controlled vapor-to-liquid phase change in an interface with tissue to thereby apply ablative thermal energy delivery.
Owner:TSUNAMI MEDTECH
Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques
InactiveUS6365465B1Controlled diffusionReduce diffuseTransistorSemiconductor/solid-state device manufacturingElectrical conductorEngineering
A structure and a method of manufacturing a double-gate metal oxide semiconductor transistor includes forming a laminated structure having a single crystal silicon channel layer and insulating oxide and nitride layers on each side of the single crystal silicon channel, forming openings in the laminated structure, forming drain and source regions in the openings, doping the drain and source regions, forming a mask over the laminated structure, removing portions of the laminated structure not protected by the mask, removing the mask and the insulating oxide and nitride layers to leave the single crystal silicon channel layer suspended from the drain and source regions, forming an oxide layer to cover the drain and source regions and the channel layer, and forming a double-gate conductor over the oxide layer such that the double-gate conductor includes a first conductor on a first side of the single crystal silicon channel layer and a second conductor on a second side of the single crystal silicon channel layer.
Owner:IBM CORP
Methods and devices for treating vulnerable plaque
ActiveUS20070123839A1Reduce the possibility of leaksControlled diffusionStentsElectrotherapyCoronary arteriesVulnerable plaque
This invention provides methods, devices and kits for treating coronary artery disease, particularly “soft” or vulnerable plaque. The invention is based on the local delivery of crosslinking means to crosslink the collagen covering the plaque and other proteins that may be present at the site to stabilize the plaque and prevent leakage of thrombogenic material into the lumen of the coronary artery. In certain embodiments, catheters are employed to achieve local delivery of a crosslinking agent or ultraviolet light.
Owner:CARDINAL HEALTH SWITZERLAND 515 GMBH
Removal of charged defects from metal oxide-gate stacks
InactiveUS7488656B2High carrier mobilityEliminate oxygen vacanciesTransistorSemiconductor/solid-state device manufacturingCapacitanceDielectric
The present invention provides a method for removing charged defects from a material stack including a high k gate dielectric and a metal contact such that the final gate stack, which is useful in forming a pFET device, has a threshold voltage substantially within the silicon band gap and good carrier mobility. Specifically, the present invention provides a re-oxidation procedure that will restore the high k dielectric of a pFET device to its initial, low-defect state. It was unexpectedly determined that by exposing a material stack including a high k gate dielectric and a metal to dilute oxygen at low temperatures will substantially eliminate oxygen vacancies, resorting the device threshold to its proper value. Furthermore, it was determined that if dilute oxygen is used, it is possible to avoid undue oxidation of the underlying semiconductor substrate which would have a deleterious effect on the capacitance of the final metal-containing gate stack. The present invention also provides a semiconductor structure that includes at least one gate stack that has a threshold voltage within a control range and has good carrier mobility.
Owner:INT BUSINESS MASCH CORP
Removal of charged defects from metal oxide-gate stacks
InactiveUS20060246740A1Good carrier mobilityHigh carrier mobilityTransistorSemiconductor/solid-state device manufacturingOxygen vacancyCapacitance
The present invention provides a method for removing charged defects from a material stack including a high k gate dielectric and a metal contact such that the final gate stack, which is useful in forming a pFET device, has a threshold voltage substantially within the silicon band gap and good carrier mobility. Specifically, the present invention provides a re-oxidation procedure that will restore the high k dielectric of a pFET device to its initial, low-defect state. It was unexpectedly determined that by exposing a material stack including a high k gate dielectric and a metal to dilute oxygen at low temperatures will substantially eliminate oxygen vacancies, resorting the device threshold to its proper value. Furthermore, it was determined that if dilute oxygen is used, it is possible to avoid undue oxidation of the underlying semiconductor substrate which would have a deleterious effect on the capacitance of the final metal-containing gate stack. The present invention also provides a semiconductor structure that includes at least one gate stack that has a threshold voltage within a control range and has good carrier mobility.
Owner:IBM CORP
Controlled-release drug delivery system
A controlled-release drug delivery system advantageously includes an open-ended, inflexible sleeve, at least two controlled-release layers and two open-center caps. Each controlled-release layer abuts a sealing surface that is located within and near each end of the sleeve. The caps seal each controlled-release layer against the abutting sealing surface. One or more dose units of drug are disposed in a region that is formed between the controlled-release layers. The controlled-release layers dissolve, at a predetermined rate, by the action of body fluids that are in contact with those layers through the center of the caps. Release of drug is delayed at least until the controlled-release layers dissolve. The dose unit itself, which is advantageously a core, can be tailored to provide an extended period of drug release. One or more dose units that provide an immediate release component can also be disposed near each end of the sleeve.
Owner:SARNOFF CORP
Method and apparatus for diagnostic and treatment using hard tissue or material microperforation
InactiveUS20100015576A1Reliable and minimally invasive fasteningControlled diffusionTeeth fillingDiagnostic recording/measuringPulse energyLight beam
A method of modifying or treating biological tissue by microperforating hard tissue is disclosed. The method comprises identifying a target area associated with the hard tissue, using a laser beam to perforate at least one incision in the hard tissue, wherein at least one incision has a diameter from a range of 0.001 mm to 0.5 mm and an aspect ratio from a range of 1 to 100 times, introducing a treatment substance into the incision, and causing the treatment substance to interact with the target area. Also a device for microperforating hard biological tissue is disclosed, comprising a laser pump system and a laser head coupled to the laser pump system for generating a pulsed laser having ranges of wavelengths, a pulse duration, pulse energy from a selected range, a beam divergence factor less than 5, a repetition rate higher than 50 Hz; and a beam delivery system comprised of a focusing system for creating a beam having a diameter from a range of 0.001 mm to 0.5 mm.
Owner:REJUVEDENT
Controlled release composition
InactiveUS20050089569A1Controlled diffusionEasy to usePowder deliveryPharmaceutical non-active ingredientsWater dispersiblePolyethylene glycol
A composition for controlled delivery of at least one active substance into an aqueous medium by erosion at a preprogrammed rate of at least one surface of the composition, the composition comprising a matrix which is erodible in the aqueous medium in which the composition is to be used and which allows substantially no diffusion of water into the composition beyond any exposed surface layers of the matrix, the matrix comprising at least one substantially water soluble crystalline polymer, e.g. a polyethylene glycol, with at least one water-dispersible or water-soluble surface active agent, e.g. a non-ionic emulsifier, dispersed therein, at least one release modifier, e.g. an enteric coating material, that functions to regulate erosion of the matrix within a pH range of from about 2 to about 7, and at least one active substance. The composition provides controlled, e.g. substantially zero order, release in both the stomach and the intestines despite different conditions of pH, agitation and absorption.
Owner:EGALET LTD
Synthetic jet air freshener
An air freshening device comprises a housing defining a chamber. The chamber contains air and a supply of fragrance material that scents the air inside the chamber. A mechanical oscillator is in fluid communication with the air in the chamber and is configured to transmit acoustic waves in the chamber. A narrow conduit provides a passage from an interior of the chamber to the atmosphere outside the chamber. The conduit is dimensionally configured such that a synthetic jet from the narrow conduit is generated upon activation of the mechanical oscillator, the synthetic jet ejecting scented air from the chamber interior to the atmosphere outside the chamber. The mechanical oscillator may be driven intermittently, resulting in a consistent intensity and character of the emitted scent over the life of the product.
Owner:TOPNOTE
Multiphoton curing to provide encapsulated optical elements
InactiveUS7014988B2Controlled diffusionInduce single and/or multiphoton photopolymerizationAdditive manufacturing apparatusRadiation applicationsHardnessEngineering
Methods of fabricating optical elements that are encapsulated in monolithic matrices. The present invention is based, at least in one aspect, upon the concept of using multiphoton, multi-step photocuring to fabricate encapsulated optical element(s) within a body of a photopolymerizable composition. Imagewise, multi-photon polymerization techniques are used to form the optical element. The body surrounding the optical element is also photohardened by blanket irradiation and / or thermal curing to help form an encapsulating structure. In addition, the composition also incorporates one or more other, non-diffusing binder components that may be thermosetting or thermoplastic. The end result is an encapsulated structure with good hardness, durability, dimensional stability, resilience, and toughness.
Owner:3M INNOVATIVE PROPERTIES CO
Method of fabrication of metal oxide semiconductor field effect transistor
ActiveUS20090068810A1Easy to spreadControlled diffusionSemiconductor/solid-state device manufacturingSemiconductor devicesField-effect transistorCondensed matter physics
A method of fabrication of a metal oxide semiconductor field effect transistor includes first providing a substrate on which a gate structure is formed. Afterwards, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source / drain extension layer is deposited in the first recess and a number of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source / drain extension and the substrate are removed to form a second recess in the source / drain extension and a portion of the substrate outside of the spacer. In addition, a source / drain layer is deposited in the second recess. Because the source / drain extension and the source / drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved.
Owner:UNITED MICROELECTRONICS CORP
Methods for delivering energy into a target tissue of a body
InactiveUS8721632B2Without the potential of carbonizing tissueSimple methodSurgical needlesSurgical instruments for heatingThermal energyGas phase
An instrument and method for tissue thermotherapy including an inductive heating means to generate a vapor phase media that is used for interstitial, intraluminal, intracavity or topical tissue treatment. In one method, the vapor phase media is propagated from a probe outlet to provide a controlled vapor-to-liquid phase change in an interface with tissue to thereby apply ablative thermal energy delivery.
Owner:TSUNAMI MEDTECH
Methods and devices for treating vulnerable plaque
ActiveUS9687262B2Reduce the possibility of leaksControlled diffusionStentsBalloon catheterVulnerable plaqueCoronary artery disease
This invention provides methods, devices and kits for treating coronary artery disease, particularly “soft” or vulnerable plaque. The invention is based on the local delivery of crosslinking means to crosslink the collagen covering the plaque and other proteins that may be present at the site to stabilize the plaque and prevent leakage of thrombogenic material into the lumen of the coronary artery. In certain embodiments, catheters are employed to achieve local delivery of a crosslinking agent or ultraviolet light.
Owner:CARDINAL HEALTH SWITZERLAND 515 GMBH
Electronic component incorporating an integrated circuit and planar microcapacitor
InactiveUS20030124794A1Improve homogeneityAvoid sources of defectsTransistorSolid-state devicesPhysicsNanometre
Electronic component incorporating an integrated circuit made in a substrate (1) and a planar capacitor, characterized in that the capacitor is made on top of a metallization plane of the component, this metallization plane forming a first electrode (2) of the capacitor, and in that the capacitor comprises: a first oxygen diffusion barrier layer (5) deposited on top of the metallization plane (2); a stack (6) of several different oxide layers, each layer having a thickness less than 100 nanometres, the stack being deposited on top of the first barrier layer (5); a second oxygen diffusion barrier layer (7) deposited on top of the stack of oxide layers (6); a metal electrode (20) present on top of the second barrier layer (7).
Owner:SAKURATECH
Semiconductor structures for gallium nitride-based devices
ActiveUS7115896B2Avoid crackingImprove crystal qualityPolycrystalline material growthSemiconductor/solid-state device manufacturingSemiconductor structureGallium nitride
A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.
Owner:EMCORE INC +1
Wearable chemcial dispenser
ActiveUS20090008411A1Improper installationLow production costSpraying apparatusFire rescueAutomatic controlEngineering
Disclosed herein are wearable devices for dispensing insect repellents, fragrances, and / or other chemicals along the outside of the clothing of a human, to avoid the need to apply such chemicals directly to clothing or to human's skin. The devices have an on / off switch that automatically controls a shutter which enables and restricts air flow, while also controlling fan operation and covering of a use-up cue. The device also is designed to prevent fan operation when an impregnated slab is not present. Also disclosed are preferred refills for use with such devices.
Owner:SC JOHNSON & SON INC
Method for producing a device applicable to biological tissues, particularly a patch for treating damaged tissues, and a device obtained by said method
ActiveUS20120070485A1Slow kineticsEasy to controlPeptide/protein ingredientsMetabolism disorderHaemostatic functionCross-link
The present invention relates to a device consisting of cross-linked nanofibrillary fibrin supported on and rooted to a microporous nonwoven fabric consisting of a biocompatible synthetic polymer material. An active ingredient is advantageously dispersed in the fibrin layer. The fibrin layer does not have a haemostatic function, but is suitable for retaining the active ingredient and releasing it with controlled kinetics. The device forming the object of the invention, preferably in the form of patches, is useful for in vitro cell cultures or for treating tissues damaged by wounds or necrosis, such as cardiac walls bearing the sequelae of infarction, or a tissue damaged by a diabetic ulcer. The patch according to the invention can be manufactured by inducing the polymerisation of the fibrin, under suitable conditions, directly on the support layer, which is suitably impregnated with thrombin (at least in a superficial portion of its thickness), and which has been conveniently prepared by means of a spray phase-inversion technique.
Owner:CONSIGLIO NAT DELLE RICERCHE +1
Moisture detector, biological body moisture detector, natural product moisture detector, and product/material moisture detector
ActiveUS20100051905A1Easy to understandReduce the amount of noiseNanoinformaticsPhotometryBiological bodyNatural product
A moisture detector includes a light-receiving element including an absorption layer having a pn-junction, or an array of the light-receiving elements, wherein the absorption layer has a multiquantum well structure composed of a Group III-V semiconductor, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity in the absorption layer is 5×1016 / cm3 or less. The moisture detector receives light having at least one wavelength included in an absorption band of water lying in a wavelength range of 3 μm or less, thereby detecting moisture.
Owner:SUMITOMO ELECTRIC IND LTD
Q-switched, cavity dumped laser systems for material processing
InactiveUS7058093B2High strengthLow powerActive medium materialGas laser constructional detailsEngravingPeak value
This disclosure discusses techniques for obtaining wavelength selected simultaneously super pulsed Q-switched and cavity dumped laser pulses utilizing high optical damage threshold electro-optic modulators, maintaining a zero DC voltage bias on the CdTe electro-optic modulator (EOM) so as to minimize polarization variations depending on the location of the laser beam propagating through the CdSe EOM crystal, as well as the addition of one or more laser amplifiers in a compact package and the use of simultaneous gain switched, Q-switched and cavity dumped operation of CO2 lasers for generating shorter pulses and higher peak power for the hole drilling, engraving and perforation applications.
Owner:COHERENT INC
Gallium nitride-based devices and manufacturing process
InactiveUS20060154455A1Control performanceAvoid crackingPolycrystalline material growthSemiconductor/solid-state device manufacturingHigh electronGallium nitride
A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.
Owner:POWER INTEGRATIONS INC
Self-forming embedded diffusion barriers
ActiveUS20140299988A1Controlled diffusionImproved electromigration resistanceSemiconductor/solid-state device detailsSolid-state devicesSelf formingTitanium
Interconnect structures containing metal oxide embedded diffusion barriers and methods of forming the same. Interconnect structures may include an Mx level including an Mx metal in an Mx dielectric, an Mx+1 level above the Mx level including an Mx+1 metal in an Mx+1 dielectric, an embedded diffusion barrier adjacent to the Mx+1 dielectric; and a seed alloy region adjacent to the Mx+1 metal separating the Mx metal from the Mx+1 metal. The embedded diffusion barrier may include a barrier-forming material such as manganese, aluminum, titanium, or some combination thereof. The seed alloy region may include a seed material such as cobalt, ruthenium, or some combination thereof.
Owner:TESSERA LLC
Metal oxide semiconductor field effect transistor and method of fabrication thereof
ActiveUS20070254421A1Improving of excessive spreadingEasy to spreadSemiconductor/solid-state device manufacturingSemiconductor devicesEngineeringField-effect transistor
A method of fabrication of a metal oxide semiconductor field effect transistor is disclosed. At first, a substrate on which a gate structure is formed is provided. Afterward, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source / drain extension layer is deposited in the first recess and a plurality of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source / drain extension and the substrate are removed to form a second recess in the source / drain extension and a portion of the substrate outside of the spacer. In addition, a source / drain layer is deposited in the second recess. Because the source / drain extension and the source / drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved.
Owner:UNITED MICROELECTRONICS CORP
Organic photosensitive devices comprising aryl squaraines and methods of making the same
InactiveUS20120248419A1Controlled diffusionNo net contributionOrganic chemistryMethine/polymethine dyesHeterojunctionAryl
There is disclosed squaraine compounds of formula I:wherein each of Y1 and Y2 is independently chosen from an optionally substituted amino group and an optionally substituted aryl group. Also described are organic optoelectronic devices comprising a Donor-Acceptor heterojunction that is formed from one or more of the squaraine compounds. A method of making the disclosed device, which may include one or more sublimation step for depositing said squaraine compound, is also disclosed.
Owner:UNIV OF SOUTHERN CALIFORNIA +1
Multiphoton curing to provide encapsulated optical elements
InactiveUS20050208431A1Controlled diffusionStabilization and protectionAdditive manufacturing apparatusRadiation applicationsEngineeringHardness
Methods of fabricating optical elements that are encapsulated in monolithic matrices. The present invention is based, at least in one aspect, upon the concept of using multiphoton, multi-step photocuring to fabricate encapsulated optical element(s) within a body of a photopolymerizable composition. Imagewise, multi-photon polymerization techniques are used to form the optical element. The body surrounding the optical element is also photohardened by blanket irradiation and / or thermal curing to help form an encapsulating structure. In addition, the composition also incorporates one or more other, non-diffusing binder components that may be thermosetting or thermoplastic. The end result is an encapsulated structure with good hardness, durability, dimensional stability, resilience, and toughness.
Owner:3M INNOVATIVE PROPERTIES CO
Photovoltaic Cell Module And Method Of Forming
InactiveUS20110203664A1Minimizes loss and leakageProvide structural strengthFinal product manufactureSemiconductor/solid-state device manufacturingSiliconeElectrical and Electronics engineering
A photovoltaic cell module, a photovoltaic array including at least two modules, and a method of forming the module are provided. The module includes a first outermost layer and a photovoltaic cell disposed on the first outermost layer. The module also includes a second outermost layer disposed on the photovoltaic cell and sandwiching the photovoltaic cell between the second outermost layer and the first outermost layer. The method of forming the module includes the steps of disposing the photovoltaic cell on the first outermost layer, disposing a silicone composition on the photovoltaic cell, and compressing the first outermost layer, the photovoltaic cell, and the second layer to form the photovoltaic cell module.
Owner:HOWELL MALINDA +3
Light-Emitting Component and Method for The Production Thereof
ActiveUS20110156059A1Improve efficiencyEasy to produceSolid-state devicesOrganic semiconductor devicesLight-emitting diodeOLED
The invention relates to a light-emitting component, in particular an organic luminescent diode, having an electrode and a counter electrode and an organic region arranged between the electrode and the counter electrode and having an organic light-emitting region. Furthermore, the invention relates to methods for the production of such a component.
Owner:NOVALED GMBH
Thermoelectric devices with interface materials and methods of manufacturing the same
ActiveUS20130146116A1Reduce interface stressControlled diffusionThermoelectric device with peltier/seeback effectThermoelectric device manufacture/treatmentElectricityNormal load
Thermoelectric devices with interface materials and methods of manufacturing the same are provided. A thermoelectric device can include at least one shunt, at least one thermoelectric element in thermal and electrical communication with the at least one shunt, and at least one interface material between the at least one shunt and the at least one thermoelectric element. The at least one interface material can comprise a plurality of regions comprising a core material with each region separated from one another and surrounded by a shell material. The interface material can be configured to undergo deformation under (i) a normal load between the at least one shunt and the at least one thermoelectric element or (ii) a shear load between the at least one shunt and the at least one thermoelectric element. The deformation can reduce interface stress between the at least one shunt and the at least one thermoelectric element.
Owner:GENTHERM INC
Pre-anneal of cosi, to prevent formation of amorphous layer between ti-o-n and cosi
InactiveUS20050070098A1Controlled diffusionSemiconductor/solid-state device detailsSolid-state devicesNickelTitanium
The present invention provides a method for forming an interconnect to a cobalt or nickel silicide having a TiN diffusion barrier. The inventive method comprises providing an initial structure having vias to exposed silicide regions positioned on a substrate; annealing the initial structure in a nitrogen-containing ambient, wherein a nitrogen passivation layer is formed atop the exposed silicide region; depositing Ti atop the nitrogen passivation layer; annealing the Ti in a nitrogen-containing ambient to form a TiN diffusion barrier and an amorphous Ti cobalt silicide between the TiN diffusion layer and the cobalt or nickel silicide and depositing an interconnect metal within the vias and atop the TiN diffusion barrier. The nitrogen passivation layer substantially restricts diffusion between the Ti and silicide layers minimizing the amorphous Ti cobalt silicide layer that forms. Therefore, the amorphous Ti cobalt or Ti nickel silicide is restricted to a thickness of less than about 3.0 nm.
Owner:GLOBALFOUNDRIES INC
Process for making ceramic insulation
InactiveUS20090295045A1Low costImprove performanceFinal product manufactureCeramic shaping apparatusPorosityFuel cells
A method is provided for producing insulation materials and insulation for high temperature applications using novel castable and powder-based ceramics. The ceramic components produced using the proposed process offers (i) a fine porosity (from nano-to micro scale); (ii) a superior strength-to-weight ratio; and (iii) flexibility in designing multilayered features offering multifunctionality which will increase the service lifetime of insulation and refractory components used in the solid oxide fuel cell, direct carbon fuel cell, furnace, metal melting, glass, chemical, paper / pulp, automobile, industrial heating, coal, and power generation industries. Further, the ceramic components made using this method may have net-shape and / or net-size advantages with minimum post machining requirements.
Owner:CERAMTEC
Non-volatile memory devices and methods of manufacturing the same
ActiveUS20080150008A1Lateral diffusion can be restrictedAvoid lateral spreadNanoinformaticsSemiconductor/solid-state device manufacturingTrappingLateral diffusion
Non-volatile memory devices include a tunnel insulating layer on a channel region of a substrate, a charge-trapping layer pattern on the tunnel insulating layer and a first blocking layer pattern on the charge-trapping layer pattern. Second blocking layer patterns are on the tunnel insulating layer proximate sidewalls of the charge-trapping layer pattern. The second blocking layer patterns are configured to limit lateral diffusion of electrons trapped in the charge-trapping layer pattern. A gate electrode is on the first blocking layer pattern. The second blocking layer patterns may prevent lateral diffusion of the electrons trapped in the charge-trapping layer pattern.
Owner:SAMSUNG ELECTRONICS CO LTD
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