694results about "Gas laser constructional details" patented technology

An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.

Methods and systems for laser-based processing of materials are disclosed wherein a scalable laser architecture, based on planar waveguide technology, provides for pulsed laser micromachining applications while supporting higher average power applications like laser welding and cutting. Various embodiments relate to improvements in planar waveguide technology which provide for stable operation at high powers with a reduction in spurious outputs and thermal effects. At least one embodiment provides for micromachining with pulsewidths in the range of femtoseconds to nanoseconds. In another embodiment, 100W or greater average output power operation is provided for with a diode-pumped, planar waveguide architecture.

A method and apparatus for laser light pulse stretching is disclosed which may comprise a beam splitter in the path of a laser output light pulse beam; selected to pass a first percent of the energy of a first input pulse of the laser output light pulse beam along a laser output light pulse beam output path as a first output pulse and to reflect a second percent of the energy of the laser output light pulse beam into a first delayed beam; an optical delay path receiving the first delayed beam and returning the first delayed beam to the beam splitter in an orientation such that a third percent of the first delayed beam is reflected into the output path as a second output pulse and a fourth percent is passed into the optical delay path as a second delayed beam; the optical delay path receiving the second delayed beam and returning the second delayed beam to the beam splitter in an orientation such that the third percent of the second delayed beam is reflected into the output path as a third output pulse and the fourth percent of the second delayed beam is passed into the optical delay path as a third delayed beam; the optical delay path receiving the third delayed beam and returning the third delayed beam to the beam splitter in an orientation such that the third percent of the third delayed beam is reflected into the output path as a fourth output pulse; the first input pulse being a first pulse in a plurality of pulses output from a prior pulse stretcher, each of a plurality of succeeding input pulses comprising the output of the prior pulse stretcher resulting from the stretching of a narrow band laser light output pulse, forming successive first, second, third and fourth output pulses, the combination of which forms a pulse stretcher having an output with TIS of at least 200 ns. The optical delay path may be formed of a plurality of at least eight reflecting mirrors and contained in an elongated enclosure having first and second end plates mounting a first group of at least four of the at least eight reflecting mirrors mounted on the first mounting surface symmetrically about a center axis of the optical delay path and a second group of at least four of the at least eight reflecting mirrors mounted on the second mounting surface symmetrically about the center axis. The mirrors may be staggered in a predefined pattern, e.g., a circular pattern. The delay path may lie in a plurality of planes. The apparatus may be part of a laser system, part of a beam delivery system or an interface between the two.

Methods and systems for laser-based processing of materials are disclosed wherein a scalable laser architecture, based on planar waveguide technology, provides for pulsed laser micromachining applications while supporting higher average power applications like laser welding and cutting. Various embodiments relate to improvements in planar waveguide technology which provide for stable operation at high powers with a reduction in spurious outputs and thermal effects. At least one embodiment provides for micromachining with pulsewidths in the range of femtoseconds to nanoseconds. In another embodiment, 100W or greater average output power operation is provided for with a diode-pumped, planar waveguide architecture.

An external cavity mirror for use in a semiconductor laser, the external cavity mirror comprising a waveguide formed on a substrate of highly electro-optic material, and including electrically-operated means for determining the reflectance attributes of the external cavity mirror.

Amplifying optical waveguide devices, which, by combining an instantaneous or nearly instantaneous gain medium with pulsed cladding-pumping can convert the multimode pump pulses to higher-brightness (even single-mode) signal pulses. The operating parameters can be carefully matched to the interaction length of the amplifying optical device to promote efficient conversion. The invention combines attractive features of cladding-pumped waveguide devices such as robustness and good thermal management properties with those of synchronously pumped devices. Thus, the pulse energy of the generated beam is not limited by the energy that can be stored in the gain medium.

Methods and systems for laser-based processing of materials are disclosed wherein a scalable laser architecture, based on planar waveguide technology, provides for pulsed laser micromachining applications while supporting higher average power applications like laser welding and cutting. Various embodiments relate to improvements in planar waveguide technology which provide for stable operation at high powers with a reduction in spurious outputs and thermal effects. At least one embodiment provides for micromachining with pulsewidths in the range of femtoseconds to nanoseconds. In another embodiment, 100W or greater average output power operation is provided for with a diode-pumped, planar waveguide architecture.

Methods and systems for laser-based processing of materials are disclosed wherein a scalable laser architecture, based on planar waveguide technology, provides for pulsed laser micromachining applications while supporting higher average power applications like laser welding and cutting. Various embodiments relate to improvements in planar waveguide technology which provide for stable operation at high powers with a reduction in spurious outputs and thermal effects. At least one embodiment provides for micromachining with pulsewidths in the range of femtoseconds to nanoseconds. In another embodiment, 100 W or greater average output power operation is provided for with a diode-pumped, planar waveguide architecture.

A PLC-based wavelength-tunable WDM-PON system with an optical wavelength alignment function, the WDM-PON system comprises: a PLC platform formed on a silicon substrate; a semiconductor chip comprising an active region generating light and a passive region located in front of the active region for vertically coupling the light generated in the active region; a planar lightwave circuit (PLC) waveguide; one portion of a PLC platform where the semiconductor chip is surface mounted; waveguide Bragg grating (WBG) formed at a predetermined location of the PLC waveguide; a directional coupler transferring an optical power by permitting the passive region to approach the PLC waveguide; a heater terminal, which is formed on the WBG; and a V-groove for attaching an optical fiber to another end of the PLC waveguide. Accordingly, a WDM-PON system having a function of realizing a cost-effective optical wavelength alignment can be provided.

An slab CO2 laser includes spaced-apart elongated slab electrodes. A lasing gas fills a discharge gap between the electrodes. An RF power supply is connected across the electrodes and sustains an electrical discharge in the lasing gas in the discharge gap. Either one or two ceramic inserts occupy a portion of width of the electrodes and in contact with the electrodes. A discharge gap is formed between the portions of the width of the electrodes not occupied by the insert or inserts. Provision of the ceramic insert or inserts increases the resistance-capacitance (RC) time constant of the electrode impedance by increasing the capacitive component of the time constant. This hinders the formation of arcs in the discharge, which, in turn enables the inventive laser to operate with higher excitation power or higher lasing-gas pressure than would be possible without the dielectric insert. The ceramic insert also decreases the difference in impedance of the electrodes with and without a discharge. This leads to a better-behaved discharge, and a discharge that is easier to light.

An index guide laser structure of the invention utilizes the combination of two spatial filter elements to limit or eliminate oscillation of high order lateral modes and beam steering. A preferred structure utilizes a frustrated and curved index guide to induce bend loss in higher order modes, and another preferred structure utilizes frustrating guides to introduce periodic interruptions of the refractive index outside the central guide to induce scattering loss in the higher order modes.

The present invention provides a reliable modular production quality excimer laser capable of producing 10 mJ laser pulses in the range of 1000 Hz to 2000 Hz or greater. Replaceable modules include a laser chamber; a pulse power system comprised of three modules; an optical resonator comprised of a line narrowing module and an output coupler module; a wavemeter module, an electrical control module, a cooling water module and a gas control module. Important improvements have been provided in the pulse power unit to produce faster rise time and improved pulse energy control. These improvements include an increased capacity high voltage power supply with a voltage bleed-down circuit for precise voltage trimming, an improved communication module that generates a high voltage pulse from the capacitors charged by the high voltage power supply and amplifies the pulse voltage 23 times with a very fast voltage transformer having a secondary winding consisting of a single four-segment stainless steel rod. A novel design for the compression head saturable inductor greatly reduces the quantity of transformer oil required and virtually eliminates the possibility of oil leakage which in the past has posed a hazard.

An optical device (10) includes a broad area laser (72) for lasing at a first wavelength (64), a multimode active-doped tapered waveguide laser (6); and a multimode passive planar mode transformer (118) coupling and tapering from the broad area laser (72) to the multimode active-doped tapered waveguide laser (6).

A slab laser includes two elongated electrodes arranged spaced apart and face-to-face. Either one or two slabs of a solid dielectric material extend along the length of the electrodes between the electrodes. A discharge gap is formed either between one of the electrodes and one dielectric slab, or between two dielectric slabs. The discharge gap is filled with lasing gas. A pair of mirrors is configured and arranged to define a laser resonator extending through the gap. An RF potential is applied across the electrodes creating a gas discharge in the gap, and causing laser radiation to circulate in the resonator. Inserting dielectric material between the electrodes increases the resistance-capacitance (RC) time constant of the discharge structure compared with the RC time constant in the absence of dielectric material. This hinders the formation of arcs in the discharge, which enables the laser to operate with higher excitation power, higher lasing gas pressure, and higher output power than would be possible without the dielectric inserts.

A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2<(nc1, nc3)<ne<(ns, ng) is satisfied.

A laser discharge, where the laser discharge can be formed by electrodes and at least one sidewall in a manner allowing a more compact structure than previously provided. Protrusions in the electrodes allow easier laser starts, and sectional sidewall(s) allow easier fabrication of sidewall(s), decreasing manufacturing costs.

This disclosure discusses techniques for obtaining wavelength selected simultaneously super pulsed Q-switched and cavity dumped laser pulses utilizing high optical damage threshold electro-optic modulators, maintaining a zero DC voltage bias on the CdTe electro-optic modulator (EOM) so as to minimize polarization variations depending on the location of the laser beam propagating through the CdSe EOM crystal, as well as the addition of one or more laser amplifiers in a compact package and the use of simultaneous gain switched, Q-switched and cavity dumped operation of CO2 lasers for generating shorter pulses and higher peak power for the hole drilling, engraving and perforation applications.

A gas discharge laser crystallization apparatus and method for performing a transformation of a crystal makeup or orientation in the substrate of a workpiece is disclosed which may comprise, a multichamber laser system comprising, a first laser unit comprising, a first and second gas discharge chamber; each with a pair of elongated spaced apart opposing electrodes contained within the chamber, forming an elongated gas discharge region; a laser gas contained within the chamber comprising a halogen and a noble gas selected to produce laser light at a center wavelength optimized to the crystallization process to be earned out on the workpiece; a power supply module comprising, a DC power source; a first and a second pulse compression and voltage step up circuit connected to the DC power source and connected to the respective electrodes, comprising a multistage fractional step up transformer having a plurality of primary windings connected in series and a single secondary winding passing through each of the plurality of primary windings, and a solid state trigger switch; and a laser timing and control module operative to time the closing of the respective solid state switch based upon operating parameters of the respective first and second pulse compression and voltage step up circuit to effect operation of the first and second laser units as either a POPA configured laser system or a POPO configured laser system to produce a single output laser light pulse beam. As a POPA laser system relay optics may be operative to direct a first output laser light pulse beam from the first laser unit into the second gas discharge chamber; and, the timing and control module operates to create a gas discharge between the second pair of electrodes while the first output laser light pulse beam is transiting the second discharge region, within plus or minus 3 ns and as a POPO, combining optics combine the output beams, and timing creates pulse separation in the combined output a preselected time plus or minus 3 ns.

An optical device includes a first waveguide layer in which multiple-beam interference occurs, a second waveguide layer which includes a back surface facing the first waveguide layer and a front surface as a light output surface, and a diffraction grating which is arranged on a back side of the second waveguide layer and faces the first waveguide layer, wherein a grating constant of the diffraction grating is defined such that a first-order diffracted light emerges from the second waveguide layer, the first-order diffracted light being generated when a light component having a highest intensity of light which propagates in an in-plane direction while causing multiple reflection in the first waveguide layer enters the diffraction grating.

The present invention provides a control system for a modular high repetition rate two discharge chamber ultraviolet gas discharge laser. In preferred embodiments, the laser is a production line machine with a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber.Novel control features specially adapted for a two-chamber gas discharge laser system include: (1) pulse energy controls, with nanosecond timing precision (2) precision pulse to pulse wavelength controls with high speed and extreme speed wavelength tuning (3) fast response gas temperature control and (4) F2 injection controls with novel learning algorithm.

A laser to produce pulses of light having predetermined spectral shapes, comprising a waveguide, an optical pump source, a gain medium to produce seed radiation, and a modulator and an array of Bragg gratings to modify the properties of the seed radiation. Once generated by the gain medium, the seed radiation propagates in the waveguide where it is first pulsed by the modulator. The resulting pulses are then selectively reflected by the Bragg gratings, which separates different spectral components of the reflected beam. This reflected beam then travels back to the modulator, which is timed to let only the desired spectral components go through. In this manner the laser is self-seeded and allows spectrum and wavelength selection from pulse to pulse.

A method of making permanent adjustments to the resonant cavity of a laser device in order to match its free spectral range to a specified frequency interval involves monitoring the optical output produced during laser operation or cavity illumination with diagnostic light, determining the free spectral range from the monitored output, and then permanently modifying the effective refractive index of an intracavity waveguide segment of the laser device according to the determined free spectral range obtained from the monitoring step until the desired match is achieved. The permanent index changes can be done in several ways, including illumination of the intracavity segment with an energetic beam (e.g. UV light) to induce a chemical alteration in the waveguide material, such as polymer cross-linking in the waveguide cladding. Evaporative deposition or ablative removal of intracavity waveguide material would also produce the desired permanent modifications.

An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.

RF excited gas laser consists of a laser tube having external surfaces; a power supply compartment having elongated external fins and a pair of endplates on its opposite ends and wherein laser tube is placed between and is flexibly attached to the endplates; a sheet-metal cover mounted to the endplates and to power supply compartment and forming a laser assembly and having at least one pair of intake openings and at least one pair of exhaust openings for the cooling air to flow through the laser assembly by entering the laser assembly through the intake openings and flowing over power supply external fins and over laser tube external surfaces and then exiting through the exhaust openings. Present invention is characterized by lower cost and more efficient forced air cooling laser tube and RF power supply.

A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs / InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.

A light wavelength converting element which can reduce an amount of light fed-back to a semiconductor laser. The light wavelength converting element converts a wavelength of a fundamental wave which enters from a first end surface side of an optical waveguide to thereby emit a converted wavelength wave from a second end surface side thereof. The second end surface is inclined with respect to the side surface of the optical waveguide. Also provided is a wavelength stabilized laser having a semiconductor laser, a device which feeds a laser beam emitted from the semiconductor laser back to the semiconductor laser, and a band-pass filter. An optical length between the semiconductor laser and the device is made to be longer than a coherent length of the semiconductor laser, thus improving linearity of a current vs. light output characteristic. Further, a light wavelength converting unit and a light wavelength converting module are provided in which, since an LD-SHG unit formed by a semiconductor laser and a light wavelength converting element is hermetically sealed in a package, the LD-SHG unit can be manufactured easily and has excellent stability over time.

A MEMS resonator includes an annular resonator body defined by an inner radius and an outer radius, a first electrode positioned within the inner radius and spaced from the resonator body, and a second electrode positioned around the annular resonator body and spaced from the outer radius. The first electrode and the second electrode provide for capacitive drive of the resonator body and capacitive sense of the resonator body. Piezo-resistive sense and piezoelectric drive / sense techniques can also be utilized. The overall extent can be smaller than 1 cm2 in area and positioned on a supporting substrate by a plurality of anchors. The substrate can comprise an RF transceiver integrated circuit with the anchors connecting the drive electrode and sense electrode to the integrated circuit. The resonator is readily fabricated using conventional semiconductor integrated circuit fabrication techniques.

Described is a method for controlling the wavelength of a laser in a wavelength division multiplexed (WDM) system. The method includes generating broadband light having a dithered optical power and a wavelength spectrum that includes a plurality of WDM wavelengths. The broadband light is spectrally filtered to generate a spectrally-sliced optical signal having a wavelength spectrum that includes one of the WDM wavelengths. The spectrally-sliced optical signal is injected into a laser and a dithered optical power of the laser is determined. A parameter of the laser is controlled in response to the determination of the dithered optical power to thereby align a wavelength of the laser to the wavelength spectrum of the spectrally-sliced optical signal.