15 results about "Waveguide lasers" patented technology

The application belongs to the field of special composite machining, and more particularly relates to a waveguide laser electrolysis composite machining device and method, which comprises a laser, a CCD camera, a pulse power supply, and a reflector, a focusing mirror, a liquid supply system and a conductive nozzle arranged in sequence from top to bottom; the CCD camera is arranged above the reflector; the laser is arranged on one side of the reflector, and the emitted light is refracted by the reflector, then passes through the focusing mirror, the liquid supply system and the conductive nozzle in sequence, and irradiates on the surface of a part to be machined; the anode of the pulse power supply is connected to the part to be machined, and the cathode is connected to the conductive nozzle; the outer surface of the conductive nozzle is sleeved with a synchronous belt, and the conductive nozzle is connected to the driving shaft of a driving device through the synchronous belt. The application utilizes the difference in laser refractive index between the electrolyte and the low refractive layer to make the laser realize total reflection between the electrolyte and the low refractive layer, adopts an inert electrolyte, reduces the loss of laser energy in the propagation process, and realizes the maximization of laser energy.

The application provides a low-loss multilayer coupling ridge-shaped optical waveguide laser chip and a preparation method, relates to the technical field of laser chips, and comprises a layered gradient interface ridge-shaped core, a distributed coupling ring cavity, a lateral compensation ridge-shaped shell and an integrated feedback ridge-shaped terminal. The bottom layer of the layered gradient interface ridge-shaped core is a silicon-based ridge-shaped layer with a thickness of 180-220 nm, the top of the silicon-based ridge-shaped layer is provided with a gradient refractive index transition zone with a thickness of 40-60 nm, and the top of the gradient refractive index transition zone is provided with a gain material layer with a thickness of 280-320 nm. The application sets the gradient refractive index transition zone in the layered gradient interface ridge-shaped core, realizes mode field smooth matching between the silicon-based ridge-shaped layer and the gain material layer, reduces the interface reflection loss to below 0.08 dB, and thus effectively solves the problems of mode mismatch and high reflection loss (usually above 0.5-1 dB) caused by refractive index mismatch during the integration of heterogeneous materials in the prior art.

The application provides a three-dimensional special-shaped light waveguide laser direct writing method and system, and relates to the technical field of laser.The method comprises the following steps: based on an initial topography control vector, cooperative calculation and optimization are performed through a preset process model, the process model is integrated with a material response database, a slit transfer function model and a scanning superposition model, so that a cooperative control instruction set for each path point is generated, and the instruction set accurately specifies the states that need to be synchronously reached by a polarization control unit, an electric slit mechanism and a laser power module when laser reaches each path point; a three-dimensional displacement platform is driven to scan along a path point sequence, and a topography cooperative controller performs interpolation calculation on the instructions of adjacent path points in the cooperative control instruction set according to real-time position feedback of the platform.The application can actively design the waveguide cross section geometry topography and accurately realize it in three-dimensional space.

The application provides a Q-switching device for a waveguide CO2 laser, which can improve Q-switching output peak power, output stable and reliable high-quality light beams for a long time, and is beneficial to miniaturization of the laser. The application is suitable for the waveguide CO2 laser, the stroke of the piezoelectric ceramic can be changed between dozens of microns and dozens of millimeters, and the stroke distance is precisely controlled in a closed loop by a ceramic controller, so that the Q-switching is easily realized, the application has a simple structure, does not need to insert a complex Q-switching element in a resonant cavity, the coupling loss of a waveguide port is greatly reduced, and the Q-switching output peak power is improved. The piezoelectric ceramic has the characteristics of high precision, good stability and long service life, so that the stable and reliable high-quality light beams can be output for a long time, the piezoelectric ceramic has a small volume, the overall structure of the laser is more compact, and the miniaturization of the laser is beneficial.

This invention relates to the field of waveguide gas laser technology, specifically to a method and device for preferentially controlling the electrode electric field to prioritize the lowest-order waveguide mode through coating, comprising the following steps: S1: determining the beam waist position of the laser resonator; S2: preparing an insulating coating on the surface of the waveguide laser electrode plate corresponding to the beam waist position; S3: performing a gradient transition edge treatment on the insulating coating; S4: constructing an impedance matching compensation network at the electrode feed end in the insulating coating region. This invention, by setting an insulating coating, achieves localized reduction of the electric field intensity in the beam waist region; simultaneously, by constructing an impedance matching compensation network, it accurately compensates for the capacitance effect introduced by the coating, and through dynamic monitoring and adjustment, ensures that the standing wave ratio and discharge voltage fluctuations are within a minimal range, guaranteeing effective coupling of RF power and uniform and stable discharge, thereby improving the overall efficiency and reliability of the device.

The invention provides a high-power low-intensity-noise semiconductor laser chip and a laser, a lower waveguide layer is arranged above an N-type substrate, two optical limiting layers are arranged above the lower waveguide layer, an active layer is clamped between the two optical limiting layers, a grating layer is arranged on the optical limiting layers, and the grating layer is arranged on the N-type substrate. An upper cladding layer is arranged on the grating layer, and a contact metal layer is arranged on the upper cladding layer; the grating layer is integrated with a lambda / 4 phase shift structure; and the semiconductor laser chip adopts a ridge waveguide structure. Compared with a traditional narrow ridge waveguide DFB laser, the narrow ridge waveguide DFB laser has the advantages that under the short cavity length condition, the output power exceeding hundreds of milliwatts, low relative intensity noise, high side mode rejection ratio and the narrow line width of about hundreds of kHz are achieved, and meanwhile the relaxation oscillation frequency of the GHz level is achieved. The laser chip shows good power linearity and single-mode stability in a lower normal temperature range, and is suitable for the fields of high-speed optical fiber communication, microwave photonics and the like with strict requirements on power and noise performance.

A laser is provided, including: a distributed Bragg mirror; a waveguide, the laser to emit light radiation along a longitudinal direction x, and the waveguide formed at least in part in a stack of layers made of III-V materials including at least one active region to emit the light radiation, the mirror including lateral corrugations distributed periodically along the direction x in a period Λ, the corrugations being carried by at least a lateral plane xz defined by the direction x and a first transverse direction z normal to the direction x, the corrugations having a dimension d along a second transverse direction y normal to the direction x; and a top electrode arranged on the waveguide along the direction z, the corrugations being partly located at lateral flanks of the top electrode, extending parallel to the plane xz, and extending only on the lateral flanks of the top electrode.

The application relates to the field of semiconductor lasers, in particular to a high-power narrow-linewidth hybrid integrated laser, which comprises a wide-waveguide laser gain chip and a silicon-based external cavity photonic chip, the silicon-based external cavity photonic chip comprising a tip multi-section edge coupler, a bus waveguide, at least three cascaded micro-ring resonators and a feedback component; the tip multi-section edge coupler comprises a tip waveguide array and a tapered combination waveguide, the tip waveguide array is composed of side-by-side inverted tapered waveguides, the width of the input end face of the inverted tapered waveguide is smaller than that of the output end face; and the width of the tapered combination waveguide gradually decreases from the input end to the output end. The application solves the industry problem that high power and narrow linewidth are difficult to be considered in a hybrid integrated laser, has the advantages of high output power, extremely narrow linewidth, wide tuning range, high coupling efficiency, good process tolerance and high integration, and provides a high-performance light source for the next-generation coherent optical communication, laser radar and precision measurement system.

The application provides a kind of laser equipment, laser equipment includes first waveguide, second waveguide group and laser, second waveguide group includes third waveguide and fourth waveguide respectively arranged in the two sides of first waveguide;Laser includes: first ridge structure and second ridge structure;First ridge structure is excited to emit laser by applying driving current to first ridge structure, and the excitation mode of laser is single lobe far field base transverse mode;First ridge structure is excited to emit laser by applying excitation to first ridge structure and second ridge structure, and the excitation mode of laser is double lobe far field single high order mode.In this way, the laser can be switched between single lobe far field base transverse mode and double lobe far field single high order mode by changing driving current, so as to control the far field shape of laser, quickly switch single lobe far field and double lobe far field, which can ensure high power output of laser and narrow linewidth characteristics of laser.

The application relates to a gradually changing frequency-stabilized mode-locked, super-narrow-line-width, high-power base-mode external-cavity semiconductor laser, and belongs to the technical field of semiconductor lasers. The semiconductor laser comprises a laser chip and a mode-locked element, a waveguide is arranged on the laser chip, the mode-locked element is arranged outside the light-emitting cavity surface of the laser chip, and the light refracted by the light-emitting cavity surface enters the mode-locked element vertically to the end surface of the mode-locked element. The application is characterized in that the light reflected by the light-emitting cavity surface cannot be transmitted back to the ridge waveguide, and only the light reflected by the external mode-locked element can be transmitted back to the waveguide to form F-P oscillation, so that the overall side mode suppression ratio of the device is effectively improved, and the mode jumping phenomenon of the external-cavity laser is greatly reduced.

The application provides an optical phased array radar beam scanning technology and a waveguide preparation method, and belongs to the field of optical waveguide laser radars.The application uses a doped material as a cladding layer, changes the electrical characteristics of the material by controlling the doping type and doping concentration in the cladding layer, and makes the material into an electrode, the core layer of the optical waveguide adopts an intrinsic layer without doping, a high resistance characteristic of the intrinsic layer is utilized, a sufficient voltage is loaded on the waveguide layer, a sufficient electric field is formed, and the electric-optical effect is utilized to scan the angle of a surface plasmon incident light beam.The optical phased array radar beam scanning technology is used for the surface plasmon incident angle regulation, is beneficial to plasmon wave vector matching and accurate regulation of the incident angle, the optical phased array radar beam scanning technology and the waveguide preparation method for regulating the surface plasmon incident angle are simple, are widely applied, and have important significance for the development of microscopic, sensing and measuring fields.

To provide an optical waveguide device in the field of mid-infrared photonics and a method for manufacturing such a device.SOLUTION: The device comprises a fluoride glass substrate having a local concentration of a chemical element at an internal contact and a waveguide inscribed along a path defined in the substrate. The waveguide is formed by directing a focused ultra-short laser pulse into the substrate and scanning the pulse to induce migration and densification of chemical elements at the inner contacts, resulting in a positive refractive index contrast. Fluoride glass substrates can include zirconium fluoride and modifiers such as barium fluoride, aluminum fluoride, and rare earth elements to enable optical gain. The described technology further encompasses an integrated photonics device including a waveguide laser with mirrors and gratings defining a laser cavity for use in sensing, communications, and laser systems.SELECTED DRAWING: Figure 1

This invention relates to the field of waveguide laser technology, comprising a pair of parallel, oppositely arranged electrode plates, spaced apart to form a waveguide gap; resonant cavities are provided at both ends of the two electrode plates along their length; an insulating coating is provided on the inner surface of at least one electrode plate corresponding to the beam waist region of the resonant cavity; the insulating coating is used to locally weaken the constraint of the electric field on this region by utilizing the difference in conductivity between itself and the electrode plates, forming a free-space-like propagation region with an electric field strength lower than the surrounding region, thereby preferentially selecting the lowest-order waveguide mode for propagation. This invention significantly improves the suppression capability of higher-order modes, avoids the processing difficulty and loss problems caused by excessively small gaps, significantly improves the long-term operational stability of the device, increases the laser damage resistance threshold by approximately 40%, and improves surface thermal conductivity by approximately 25%, thereby effectively extending the device's lifespan.

The application discloses a kind of three-dimensional optical waveguide laser direct writing system and method, the system includes laser, beam expander, rotating motor, slit, focusing lens, motion platform and control system successively arranged along optical path;The light beam incident end of slit is installed with dove prism, rotating motor drives dove prism and slit without relative motion Synchronous rotation;Laser beam is refracted after dove prism with 2ω angular velocity rotation, then penetrates the slit of synchronous rotation and forms high-speed rotating elliptical light spot, forms time average, space isotropic equivalent spherical focus in sample after focusing lens focusing.This application converts dynamic elliptical light spot into equivalent spherical focus by the synchronous linkage of dove prism and rotating slit, eliminates the dependence of traditional direct writing technology on scanning direction, realizes the direct writing processing of high roundness three-dimensional optical waveguide in any scanning direction, and can further improve light field quality and processing precision by adding 4f imaging system.

The present disclosure relates to an optical waveguide device and a method for fabricating such a device in the field of mid-infrared photonics. The device comprises a fluoride glass substrate having localized concentrations of a chemical element at inscription points, with a waveguide inscribed along a defined path within the substrate. The waveguide is formed by directing focused ultrashort laser pulses into the substrate and scanning the pulses to induce migration and densification of the chemical element at the inscription points, resulting in a positive refractive index contrast. The fluoride glass substrate may include zirconium fluoride and modifiers such as barium fluoride, aluminium fluoride, and rare-earth elements to enable optical gain. The described technology further encompasses integrated photonic devices, including waveguide lasers comprising mirrors and gratings that define a lasing cavity for use in sensing, communication, and laser systems.