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Asymmetric metal grating and coating semiconductor multi-quantum-well waveguide laser

A waveguide laser and metal grating technology, which is applied in the fields of laser technology and micro-nano optoelectronics, can solve the problems of poor unidirectionality of subwavelength cavity lasers, and achieve good unidirectionality.

Inactive Publication Date: 2014-06-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] The invention aims to solve the technical problem of poor unidirectionality of existing subwavelength cavity lasers and microcavity lasers

Method used

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  • Asymmetric metal grating and coating semiconductor multi-quantum-well waveguide laser
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  • Asymmetric metal grating and coating semiconductor multi-quantum-well waveguide laser

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Embodiment Construction

[0023] The invention proposes a novel waveguide laser combined with FP-like cavity and localized surface plasmon resonance. The present invention adopts the total internal reflection of two metal surfaces to reduce radiation loss, and at the same time adopts multiple quantum wells and large gain materials in the selection of semiconductor materials in the metal grating-semiconductor-metal three-layer structure to compensate for the cavity introduced by the metal loss and propagation loss. The coupling of FP-like cavity resonances and localized surface plasmon resonances significantly enhances the optical field in the semiconductor layer. In addition to effectively coupling the pump light, the metal grating has a good mode selection effect on the resonance wavelength through the coupling of the localized surface plasmon resonance and the FP-like resonance.

[0024] In order to make the object, technical solution and advantages of the present invention clearer, the present inve...

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Abstract

The invention relates to the field of laser technologies and micro-nano optoelectronics and discloses an asymmetric metal grating and coating semiconductor multi-quantum-well waveguide laser. The waveguide laser comprises an upper metal grating layer (1), an active layer (2), a lower metal coating layer (3) and a substrate (4). The optical field is locally limited in the semiconductor active layer effectively through the upper metal grating layer and the lower metal coating layer. One-dimensional strip-shaped metal gratings are manufactured on the upper metal grating layer, FP-cavity-like resonance is formed in combination with local area surface plasma resonance, and thus wavelength mode can be effectively selected. The active layer is made of multi-quantum-well high-gain material, pump light is effectively absorbed and target light is sufficiently fed back through strong resonance between the pump light and the target light, and finally low-threshold laser emitting is achieved. The waveguide laser has the advantages of being capable of limiting one-dimensional sub-wavelength of light, good in unidirectionality and the like.

Description

technical field [0001] The invention belongs to the field of laser technology and micro-nano optoelectronics, in particular to an asymmetric metal grating-coated semiconductor multi-quantum well waveguide laser. Background technique [0002] In the field of optical communication, with the urgent need for on-chip photoelectric integration, people are paying more and more attention to the miniaturization of on-chip integrated light sources. Compared with high-power output lasers with low divergence angles, people began to study low-threshold compact lasers, and some progress has been made in recent years. Because of the localized nature of light well below the diffraction limit, surface plasmons offer the possibility of ultracompact lasers that can directly generate coherent light fields at the nanometer scale. Nanoscale resonators have been reported, such as: metal-coated nanopillars, metal-coated nanorings, semiconductor nanowires on silver films, and gold nanospheres, etc....

Claims

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Application Information

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IPC IPC(8): H01S5/343
Inventor 郑婉华张斯日古楞王宇飞齐爱谊马传龙刘磊刘云郭小杰
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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