Hybrid waveguide laser and method for manufacturing hybrid waveguide laser

Abstract

The invention relates to a hybrid waveguide laser and a method for manufacturing the hybrid waveguide laser. The hybrid waveguide laser is sub-micron III-V in level and comprises a channel waveguide, a lateral cladding layer adjacent to the waveguide in the transverse direction, and a light limiting element. The channel waveguide is 50 nm to 800 nm in width and 500 nm to 1200 nm in height. The light limiting element is used for limiting the light within the waveguide. The waveguide may comprise an III-V lamination comprising a lower cladding layer, an active region and an upper cladding layer. The laser may be optically coupled to an output waveguide which may be electrically pumped. The invention also provides a method for integrating the sub-micron III-V level waveguide laser onto a silicon photon platform. The method comprises the steps of providing an electricity insulating layer on a silicon substrate, etching a channel of 50 nm to 800 nm in width in the electricity insulating layer, forming a channel waveguide in the channel through providing an III-V lamination during the local epitaxial growth process, and providing a light limiting element to limit the light within the waveguide.

Description

technical field [0001] The disclosed technology relates to hybrid waveguide lasers (eg, submicron hybrid waveguide lasers) and methods for integrating such waveguide lasers on silicon photonics platforms. Background technique [0002] Driven by demands from optical I / O, telecommunications, optical computing, and other applications, much research is being done in the area of ​​integrating III-V devices on silicon. Various options have been proposed for integrating electrically pumped lasers and optical amplifiers on silicon-based photonics platforms. [0003] The individual laser dies can be flip-chip mounted to a silicon photonics wafer or can be transferred to a silicon platform using an epitaxial lift-off process. Tight mechanical alignment requirements make this option less attractive, especially for wavelength-division multiplexing (WDM) systems where the number of lasers required per chip has increased over the past few years. [0004] Alternatively, bonding methods c...

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Problems solved by technology

However, this approach leads to relatively high fabrication costs due to the extreme consumption of expensive III-V materials

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