The invention discloses a photoelectric detection structure and a manufacturing method thereof, and a
photoelectric sensor and a manufacturing method thereof, the photoelectric detection structure comprises a substrate structure and a laminated structure, the
doping concentration of a second doped
germanium layer in the laminated structure is not greater than that of a first doped
germanium layer, and the
doping concentration of the second doped
germanium layer is greater than that of the first doped germanium layer in the direction away from the first doped germanium layer. The
doping concentration in the second doped germanium layer is gradually reduced; the doping concentration of the third doped germanium layer is not greater than the doping concentration of the first doped germanium layer, and the doping concentration of the third doped germanium layer is gradually increased in the direction away from the first doped germanium layer, so that a symmetric
electric field structure of the highly doped
contact region, the gradient decreasing layer, the intrinsic
absorption layer and the gradient increasing layer is constructed; a built-in
electric field with space change is formed, the separation and migration capability of
photon-generated carriers is enhanced, meanwhile,
space charge accumulation and recombination loss under the high
light intensity condition are reduced, and the response speed,
quantum efficiency and saturation light current of the device are remarkably improved.