344 results about "Space charge" patented technology

The invention provides an oil-paper insulation space charge measurement numerical simulation method considering a composite electric field working condition, and relates to the technical field of oil-paper insulation space charge measurement simulation, and the method comprises the steps: obtaining the actual operation environment parameters of a high-voltage transformer, and carrying out the multi-physical field coupling calculation of a fluid field, an electrostatic field and a temperature field of the high-voltage transformer; establishing a bipolar carrier transmission model, collecting structure parameters and attributes of oil paper insulation, and setting material parameters; setting boundary conditions of each physical field, and establishing a corresponding charge transport reaction equation; initializing an oil paper insulation system to configure related parameters of a solver, and calculating a charge transport reaction equation through the solver to obtain a simulation result; perfecting the simulation result to obtain a space charge measurement numerical simulation result of oil paper insulation; according to the invention, the limitation of field test conditions is overcome, the technical problem of low detection resolution of measurement equipment is solved, and the real-time performance of accurate observation of charge dynamic response is ensured.

The invention discloses a one-dimensional plasma simulation method based on deep learning optimization and related equipment, and the method comprises the steps: firstly constructing a one-dimensional basic model containing specific parameters, and then constructing and training a neural network of a multi-layer sensor (MLP) structure for predicting a potential function; then, a particle simulation method (DL-PIC) based on deep learning optimization is executed. Under the condition that 1000 grid points are included, compared with a traditional particle simulation method (PIC), the simulation time of the DL-PIC neural network is shortened by about 33.37%. According to the invention, complex physical phenomena such as reflection oscillation caused by heat effect and space charges can be effectively processed, and the method has good expansibility. The method is not only suitable for one-dimensional simulation, but also can be popularized to higher-dimension and electromagnetic particle simulation. Therefore, the invention provides an efficient and accurate solution for plasma simulation research, and can be widely applied to the technical field of plasma simulation.

The invention discloses a silicon-based NMOS internal defect detection method, system and device and a medium, and the method comprises the steps: enabling a source electrode and a drain electrode to be in short circuit, respectively applying a high level and a low level to a grid electrode and a Bulk end, applying a reverse voltage to the grid electrode at a single temperature point, and recording a capacitance transient signal in a deep energy level trap filling and emission process in a space charge region; a digital system is used for recording N transient measurement values of the capacitor at different temperature points; Fourier calculation is used for converting the N transient measurement values into a relational graph of discrete Fourier coefficients and temperature, so that information such as trap level, defect concentration and capture cross section of the deep level trap can be accurately obtained. According to the method, a capacitance transient spectrogram obtained by voltage pulse excitation under a variable-temperature condition is converted into a relational graph of a discrete Fourier coefficient and temperature by Fourier calculation, so that the defect level of a deep level trap is accurately obtained. And the transient test time can be further shortened for the discrete trap level, so that the result is accurately controlled.

The invention discloses a cable insulation evaluation method and device, electronic equipment and a storage medium, which are used for solving the technical problem that the existing cable insulation evaluation method is low in reliability and accuracy. The method comprises the following steps: slicing a to-be-detected cable to obtain an insulation slice with a preset thickness; obtaining the lowest alternating current breakdown field strength of the insulation slice under the corresponding voltage grade; acquiring alternating-current space charge distribution characteristic data of the lowest alternating-current breakdown field strength; calculating an insulation failure characteristic value according to the alternating current space charge distribution characteristic data; testing space charge distribution characteristics of the insulation slices; calculating an average charge density and a maximum field intensity distortion rate parameter of the space charge distribution characteristics; and comparing the average charge density and the maximum field intensity distortion rate parameter with the insulation failure characteristic value to obtain an insulation evaluation result of the to-be-tested cable.

The invention discloses a 4kV low-resistance super-junction planar gate SiC VDMOS device structure and a preparation method thereof, and relates to the technical field of silicon carbide power devices, the 4kV low-resistance super-junction planar gate SiC VDMOS device structure comprises drain electrode metal, an n + SiC substrate and an n-type drift layer are arranged above the drain electrode metal, an n-type region is arranged in the middle of the n-type drift layer, a p-type shielding layer is arranged below the n-type region, p-type regions are arranged on two sides of the n-type drift layer, and the n + SiC substrate is arranged above the n-type region. A p-type well region is arranged above the p-type region; strip-shaped Schottky metal and strip-shaped polycrystalline silicon are arranged in the p-type well region, and an n + source region, source electrode metal, an insulating medium and grid electrode metal are arranged above the p-type well region; and the device is prepared. By constructing the transverse and longitudinal double-space charge region structure, the doping concentration of the n-type drift layer of the device is higher, the on-resistance of the device is reduced, the ohmic contact resistance and the body diode on-resistance of the device can be effectively reduced by the Schottky metal and polycrystalline silicon structure, and the follow current loss of the device is further reduced.

The invention discloses an ultrafast electron diffraction system based on 300kV direct current acceleration and radio frequency compression and a diffraction imaging method, and solves the problems that the time resolution of the current keV ultrafast electron diffraction system is insufficient due to the space charge effect, and the time-varying electric field generated by a radio frequency compression cavity is used for carrying out time compression on the beam bunch length of an electronic pulse; and the electronic pulse energy is low. According to the invention, femtosecond laser is split, one beam of light generates an ultrafast electronic pulse by using an ultrafast electron generation module based on 300kV direct current acceleration, the energy of the ultrafast electronic pulse is relatively high, and then the pulse width of the ultrafast electronic pulse is compressed by using a radio frequency compression module; the pulse broadening caused by the space charge effect of the ultrafast electronic pulse is effectively inhibited, the time resolution below hundred femtoseconds can be realized, meanwhile, the charge quantity of a single beam of ultrafast electronic pulse reaches 16fC (105e-), and the method can be used for ultrafast kinetic research of irreversible materials.

The present invention discloses a memristor based on a GaN / PEDOT:PSS planar heterojunction and a preparation method thereof, including a substrate; a GaN thin film, the GaN thin film is p-type conductive, and the GaN thin film is attached to the surface of the substrate; a PEDOT:PSS organic layer, the PEDOT:PSS organic layer is p-type conductive, and the PEDOT:PSS organic layer is attached to the surface of the GaN thin film; a first electrode, forming an ohmic contact with the GaN thin film; and a second electrode, forming an ohmic contact with the PEDOT:PSS organic layer. Through the combined action of the space charge layer generated by the GaN / PEDOT:PSS heterojunction and the nitrogen vacancies in the GaN thin film, the present invention can realize the switching of the device resistance between the high resistance state and the low resistance state under the control of an external voltage, and realize the non-volatile writing and erasing of data.

Methods include introducing an ion quantity into an ion accumulation region, wherein the ion accumulation region, which can comprise a structure for lossless ion manipulations (SLIM) device allowing creation of a static or traveling wave electric field that moves ions towards an ion wall controllably blocking a movement of the ion quantity past the ion wall, wherein the ion wall is produced by one or more ion wall electrodes of an electrode arrangement, and directing the ion quantity in a direction towards the ion wall to increase a density of the ion quantity adjacent to the ion wall, such that the quantity of ions becomes space charge separated based on mobility along the direction and adjacent to the ion wall. Related apparatus provide space charge driven mobility separations.

The invention belongs to the technical field of space environment detection, and relates to an ASIC (application specific integrated circuit)-based multichannel parallel charge detection device for space charged particle detection, which comprises an anode plate, a front placing plate and a digital acquisition and processing plate, and signal transmission is performed between the anode plate and the front placing plate as well as between the front placing plate and the digital acquisition and processing plate through inter-plate connectors; the anode plate is an annular anode and is divided into a plurality of anodes, the output of each anode is connected with a current-limiting resistor in series, and a charge signal output by each anode is transmitted to the front amplifier plate through the inter-plate connector; the pre-amplification board adopts an integrated charge sensitive amplifier ASIC to amplify multiple paths of charge signals output by the anode plate, and outputs multiple paths of digital pulses to be input into the digital acquisition processing board through an inter-board connector; and the digital acquisition and processing board is used for detecting and counting multiple paths of digital pulses output by the pre-amplification board in parallel, and periodically packaging and outputting the digital pulses to a PC (Personal Computer) end.

The present invention belongs to the technical field of insulating materials, and specifically relates to an insulating material and a preparation method and application thereof. The insulating material provided by the present invention comprises the following components by mass: 100 parts of polyethylene, 0.01 to 1 parts of core-shell quantum dots, 0.5 to 2 parts of peroxide crosslinking agents and 0.5 to 2 parts of antioxidants. In the present invention, the contact interface formed by the core layer and the shell layer of the core-shell quantum dots belongs to the n-n type semiconductor heterostructure contact; the core-shell interface of the core-shell quantum dots themselves provides a confinement effect on electron carriers, and the interface between the shell layer and the insulating matrix provides a confinement effect on hole carriers; and the confinement effect gradually increases with the increase in the difference in band gap between the core layer and the shell layer of the quantum dots, thereby limiting the migration of carriers under high temperature and strong field, inhibiting the accumulation of space charges, and thus improving the insulation performance of the insulating material under high temperature and strong electric field conditions.

The invention provides a tank-type circuit breaker AC / DC voltage withstand test electric field improvement method and device and a storage medium, and the device comprises an epoxy resin composite insulator embedded with an aluminum alloy spherical shell, and the spherical shell achieves the equipotential connection with the wire outlet end of a circuit breaker sleeve through conical surface cooperation. And the curvature radius is optimally designed to transfer an electric field peak value to an equatorial region. The spherical shell is coated with a semi-conductive silicone rubber layer with resistivity distributed in a gradient manner, and the outer insulator forms a multi-stage umbrella skirt structure. During installation, dimensional tolerance self-adaptive compensation is achieved through a cam locking mechanism of the floating flange, and the belleville spring set provides axial sealing pre-tightening force. The method comprises four core processes of composite structure coaxial installation, gradient electric field regulation and control, dynamic sealing locking and electric heating state verification. According to the scheme, an electrode structure is reconstructed to suppress point discharge, space charge accumulation is blocked through dielectric layer resistivity gradient distribution, the creepage distance along the surface is prolonged through the multi-stage umbrella skirts, and the technical defect that the safety distance is shortened by a traditional grading ring is overcome.

A method and corresponding devices to reduce the presence of unwanted ions within the pseudo-potential well of the RF fields for inductively coupled plasma mass spectrometry is disclosed. This method reduces space-charge effects and leaves more room available for the ions of interest and, hence, leads to increased transmission of the desired ions into the mass analyzer. In the present invention, the space charge is reduced by adding a low-band resolving DC potential, or a fast sweeping resolving DC potential with a notch, or a fast constant resolving DC potential with a notch, or by adding auxiliary quadrupolar or dipolar RF potential to the quadrupole ion guide, such that all the unwanted ions will be outside the stable region and therefore ejected. This reduces the charge density in the ion beam and ameliorate space charge effects.

The invention discloses a resonance type photodetector and electronic equipment. The resonance type photodetector comprises a substrate; a light absorption part, which is arranged on the substrate; the resonant optical waveguide is used for receiving an optical signal input from the outside and coupling the optical signal to each light absorption part; the light absorption part is used for converting the light signal into an electric signal; the upper surface of the resonant optical waveguide is not higher than the upper surface of the light absorption part. By improving the distribution of the detector in the internal light field, the space charge effect can be relieved, and the bandwidth and saturation power of the detector are improved.

The invention relates to a space charge numerical calculation method and system of a converter transformer oil paper insulation structure. According to the method, firstly, key parameters of the oil paper insulation structure of the converter transformer are obtained, and a two-dimensional finite element simulation calculation domain is established according to the key parameters; defining constraint conditions in a two-dimensional finite element policy calculation domain, and establishing a liquid medium dynamic drift diffusion model as a space charge calculation model according to a Poisson equation and a carrier transport equation; and finally, under a constraint condition, performing non-uniform mesh generation on the model, solving a space charge calculation model, and outputting a space charge numerical value of the space charge calculation model. Compared with the prior art, the method has the advantages that the space charge distribution condition at the insulating oil paper interface can be accurately restored in the operation process of the converter transformer when the polarity of an electric field is reversed under the microscopic view angle of charge transport characteristics of different voltage waveforms, and the like.

The invention relates to a streamer channel space electric field intensity detection method considering altitude influence. The method can accurately solve the space electric field intensity in a streamer channel in a high altitude environment. According to the method, the change relation of the discharge parameters in the streamer channel along with the altitude can be calculated by solving the spatial electric field intensity of the high-altitude streamer channel, so that the discharge characteristics of the streamer at the high altitude can be analyzed, and a means is provided for researching the discharge characteristics of the high-altitude streamer. The method comprehensively considers the influence of the altitude on the space charge density in the streamer channel and the interaction between the electrode surface charge density and the space electric field intensity, and has the characteristics of being simple, accurate and convenient to implement.

The invention discloses an electrothermal aging test method and device for simulating the space charge effect of a cable terminal. The method comprises the following steps: S1, treating a cable sample; s2, constructing an electric heating aging platform; s3, carrying out five aging stage tests on the cable sample; s4, carrying out space charge detection on the cable samples at different aging stages; s5, analyzing correlation between a space charge accumulation rule and insulation degradation based on a charge mobility formula and an injection current formula; according to the invention, the actual working condition of the cable terminal is accurately simulated through the electrothermal collaborative aging platform, and the limitation that the space charge evolution law is difficult to reproduce in the traditional method is overcome; a weighted all-phase averaging method is adopted to process signals, and an arc-shaped sensor and a frequency domain deconvolution algorithm are combined, so that interference is effectively filtered out, and the detection stability and accuracy are improved; through correlation of charge accumulation and insulation degradation processes, an insulation failure mechanism is disclosed, fault early warning is realized, and theoretical and test support is provided for design optimization, life evaluation and operation and maintenance of the cable terminal.

The invention discloses an oxide semiconductor plane p / n superstructure and a preparation method thereof. According to the method, a latticed mask is formed on the surface of an oxide thin film based on a photoetching process, O2 atmosphere annealing (100-300 DEG C, 15-40 min) is combined, the local oxygen vacancy concentration of a mask covering area and an exposed area is precisely regulated and controlled, and precise in-situ conversion of a p type (oxygen-rich area) and an n type (oxygen-poor area) in a homogeneous material is achieved. The planar p / n superstructure breaks through the strict limitation of a traditional vertical multi-junction structure on material doping and interface quality, the width of a depletion region is expanded to the micron order through the p / n homojunction arrays alternately distributed in the plane, and the bulk recombination effect of photon-generated carriers is remarkably inhibited. According to the method, an innovative technical route of photoetching-assisted in-situ construction of the planar multi-junction photoelectrode is created, the method has the advantages of interface atomic-scale lattice matching, simple process, high compatibility, accurate and controllable space charge distribution and the like, and a technical foundation is laid for non-assisted solar water decomposition, research and development of self-driven optoelectronic devices and the like.

The invention discloses a wide-temperature-range solid insulation space charge measurement method, and belongs to the technical field of electrical insulation test and dielectric physical measurement. A solid insulation sample is mounted between double-layer composite electrode modules in a closed high-low temperature test cavity, and a flexible compensation gasket is adopted to absorb thermal expansion difference; a PID closed-loop control system is utilized to realize accurate and stable control of the temperature of the sample in a wide temperature range; applying a direct-current bias voltage and pulse voltage superposition signal, and collecting an acoustic signal generated by space charge displacement through a wide-temperature-range PVDF piezoelectric sensor module; and based on a sound velocity and sensitivity temperature calibration curve established by a pre-experiment, carrying out deconvolution processing on a sound wave signal to correct a temperature dependence error, and finally obtaining accurate space charge density distribution at different temperatures. According to the invention, the precision and reliability of space charge measurement of the solid insulating material in a wide temperature range are effectively improved.

The invention relates to the field of power cable materials, in particular to an ultrahigh-voltage cable insulating material, a preparation method thereof and a cable. The ultrahigh-voltage cable insulating material is prepared from the following raw materials in parts by mass: 80 to 100 parts of polyethylene, 1 to 5 parts of a cross-linking agent, 0.5 to 1 part of a compatilizer and 0.1 to 1 part of an organic molecular semiconductor. According to the ultrahigh-voltage cable insulating material, the organic molecule semiconductor with high electron affinity is introduced into the polyethylene matrix, and free electrons are attracted and fixed through strong static electricity of the organic molecule semiconductor, so that injection, migration and accumulation processes of charges in the cable insulating material are blocked; the problem of space charge accumulation of a cable insulating material in a high-voltage environment is solved from the source, and the insulativity and the long-term operation reliability of the cable insulating material are effectively improved.

The invention discloses a measurement and evaluation method and system for double analysis of the aging state of a cable, and belongs to the technical field of nondestructive testing of the insulation state of electrical equipment, and the method comprises the steps: obtaining a broadband dielectric spectrum of a corresponding aging sample in any aging period, and constructing low-frequency dielectric loss data related to a plurality of aging samples; obtaining group data of a standard measurement sample corresponding to any aging sample, and constructing oxidation data about a plurality of standard measurement samples; acquiring a dielectric spectrum space charge distribution diagram based on the low-frequency dielectric loss data, and acquiring an oxidation product concentration thermodynamic diagram based on the oxidation data; obtaining an aging grading result based on the low-frequency dielectric loss data and the oxidation data; and outputting a three-dimensional aging measurement evaluation report based on the dielectric spectrum space charge distribution diagram, the oxidation product concentration thermodynamic diagram and the aging grading result. According to the measurement and evaluation method and system for double analysis of the aging state of the cable, accurate quantification of the aging degree is achieved by synchronously analyzing the dielectric response and the chemical structure change.

The invention relates to a method for evaluating space charge injection characteristics of a polypropylene elastomer blending material for a cable. The method comprises the following steps: acquiring current information in a to-be-tested sample and sensor signal information of a piezoelectric sensor corresponding to the to-be-tested sample under the condition that the to-be-tested sample made of a polypropylene elastomer blending material is in a preset test condition; determining space charge distribution information according to the sensor signal information; and determining a space charge injection characteristic evaluation result according to the current information and the space charge distribution information. By adopting the method, the real injection current can be accurately analyzed based on the current in the to-be-evaluated sample under the preset test condition, and the accurate charge injection rate is obtained, so that charge transport in the to-be-evaluated sample is accurately analyzed by using the charge injection rate, and the accuracy of a space charge injection characteristic evaluation result is further improved.

Improved multi-pass time-of-flight mass spectrometers MPTOF, either multi-reflecting (MR) or multi-turn (MT) TOF are proposed with elongated pulsed converters—either orthogonal accelerator or radially ejecting ion trap. The converter 35 is displaced from the MPTOF s-surface of isochronous ion motion in the orthogonal Y-direction. Long ion packets 38 are pulsed deflected in the transverse Y-direction and brought onto said isochronous trajectory s-surface, this way bypassing said converter. Ion packets are isochronously focused in the drift Z-direction within or immediately after the accelerator, either by isochronous trans-axial lens / wedge 68 or Fresnel lens. The accelerator is improved by the ion beam confinement within an RF quadrupolar field or within spatially alternated DC quadrupolar field. The accelerator improves the duty cycle and / or space charge capacity of MPTOF by an order of magnitude.

The invention discloses an ultrahigh-spatial-resolution time-broadening framing camera and a framing imaging method, and solves the problem that the spatial resolution of a system is reduced due to spatial dispersion caused by the space charge effect of electrons in the transition process of an existing time-broadening framing camera. According to the invention, the characteristic that the spinning period of the photoelectrons moving in a drift magnetic field is only related to the magnetic field intensity and is irrelevant to the speed distribution of the photoelectrons overflowing from the microstrip line structure is utilized, that is, the photoelectrons overflowing from the microstrip line structure drift for a fixed time; the phase of the photoelectron circular motion is consistent with the initial phase of the photoelectron when the photoelectron overflows from the microstrip line structure, that is, by designing the magnetic field intensity and the microstrip line structure voltage, it is ensured that the photoelectron advancing in a spinning mode reaches the traveling wave gating framing tube after the integer period circular motion in the magnetic drift tube; that is, the circumferential phase of the electrons reaching the traveling wave gating framing tube is the same as the phase when the photoelectrons overflow, so that the spatial resolution of the camera reaches the optimal system.

The invention discloses a photoconductive antenna for reducing a space charge shielding effect, relates to a terahertz transmission technology, and provides a scheme for solving the problems of overhigh shielding voltage and the like in the prior art. The structure comprises a photoconductive substrate, a first electrode arranged on one side of the upper end face of the photoconductive substrate, and a second electrode arranged on the other side of the upper end face of the photoconductive substrate. A gap nano metal array is arranged between the first electrode and the second electrode; the gap nano metal array comprises unit cells which are distributed in an array; the metal sheets in the unit unit cells and / or between the unit unit cells excite local plasmon polaritons to enhance the light field intensity of corresponding areas when irradiated by incident laser. The terahertz photoconductive antenna has the advantages that the nanometer array structure is introduced, a high radiation enhancement area is generated through metal plasmon coupling, the terahertz photoconductive antenna obtains better radiation characteristics, meanwhile, the nanometer array structure is structurally optimized, the distribution condition of carriers in the photoconductive antenna is improved, and space charge shielding voltage is effectively reduced.

According to the ion regulation and control device, the ion guide device, the control method, the device, the equipment and the ion guide system provided by the invention, the first guide element and the deflection force field generation module are arranged, under the condition that ions are injected into the first guide element, the first guide element is controlled to apply the reverse electric field opposite to the ion transmission direction, and the deflection force field is generated; thereby trapping ions within the first guide element; controlling the deflection force field generation module to work so as to enable the ions in the first guide element to generate radial deflection; and under the condition that offset is completed, the first guide element is controlled to cancel the reverse electric field so that the first guide element can move in the transmission direction, ions in the first guide element can generate radial offset through the deflection force field generation module, the ions can be more uniformly distributed in the radial direction, and therefore the space area utilization rate is increased, and the transmission efficiency is improved. And the influence of the space charge effect is reduced.

The present invention discloses a method, device and storage medium for calculating space charge limited current, wherein the method comprises: S1, determining the structural model between the cathode metal plate and the anode dielectric plate; S2, using two current density values ​​as inputs of the Poisson trajectory process, calculating the amount of charge injected per unit time, and calculating the amount of charge in the process of calculating the electron trajectory and depositing it on the grid; S3, obtaining the potential distribution, and solving the electric field of each point by polynomial fitting through the extrapolation process according to the electric field definition; S4, using the secant method to obtain the updated current density, and obtaining the input current density of the next Poisson trajectory process according to the current density; S5, outputting the final current density distribution. The present invention provides a space charge limited current calculation scheme for a non-parallel plate structure, iteratively solves the electron motion trajectory in the process of calculating the electron trajectory, explores the motion law of particles under the influence of space charge, and can be widely used in the field of electronic devices.

The invention discloses a narrow-band blue light molecule as well as a preparation method and application thereof. Two donor units are introduced into a fluorene skeleton and form a staggered structure with multiple resonance units in space to regulate and control the space charge transfer intensity, on one hand, the reverse intersystem crossing rate can be improved to improve the performance and efficiency of the device, and on the other hand, efficient light emission of a narrow band is maintained. The invention further discloses a preparation method and application of the material. The compound can be used as a novel luminescent molecule with high performance, high color purity and high quantum efficiency. The narrow-band blue-light molecule has huge application potential in the aspects of preparation of luminescent materials, luminescent devices, electronic technologies and the like, and has obvious and clear prospects in the fields of display technologies and solid-state illumination luminescence.

The application relates to a satellite energy acquisition system based on space charged particle collection, belonging to the technical field of spacecraft power supply. The application aims at solving the problem that the discharge phenomenon of the space charged particles deposited on the surface of a satellite can cause physical damage to materials. The application comprises a collection capacitor used for capturing the space charged particles, forming a high-voltage electrostatic field through the accumulated charges of the space charged particles; an energy-taking conversion circuit used for converting the high-voltage electrostatic field energy stored in the collection capacitor into low-voltage electrostatic field energy and transferring the low-voltage electrostatic field energy to an energy storage capacitor; the energy storage capacitor is used for storing the low-voltage electrostatic field energy, setting a target electric field energy according to the working requirement of a rear-end load, and discharging after the target electric field energy is reached; and a switch voltage stabilizing circuit used for adjusting the discharging output voltage of the energy storage capacitor, realizing constant voltage power supply for the rear-end load. The application can reduce the charging and discharging fault risk of the surface of the satellite by collecting the particles radiated to the satellite and controllably transferring and utilizing the particles.

This application provides a method for monitoring faults in intermediate joints of 35kV ring network cables in urban rail transit, relating to the field of data processing. In this method, a cable segmentation diagram is constructed, and joint identification nodes and ring network status identifiers are generated. A synchronous observation array is established based on the station to collect transient voltage and current segments to form event evidence packages. Under the same ring network status, a set of propagation operators is constructed, and a virtual playback field is generated through recorrelation and superposition to produce a focused spectrum. Under the same operating context, a reversibility discrimination is performed to screen candidates for saturated critical states. A first focused spectrum and a second focused spectrum are generated, and structural fracture is synchronously checked. Finally, the target joint identification node is located, and the intermediate joint fault monitoring results are output. Implementing the technical solution provided in this application facilitates overcoming the dependence on continuous gradual changes and identifying the electric field reconstruction characteristics caused by space charge trap saturation, thereby improving the accuracy of abrupt degradation judgment.

The invention relates to the technical field of solar cells, in particular to a perovskite solar cell and a preparation method thereof. The perovskite solar cell is characterized by comprising a conductive substrate, a hole transport layer, a perovskite light absorption layer, a composite passivation layer and an electron transport layer which are stacked in sequence, the composite passivation layer comprises a tunneling layer and a selective contact passivation layer which are stacked; the selective contact passivation layer is of a discontinuous patterned structure. According to the invention, by arranging the composite passivation layer, an interface between the perovskite light absorption layer and the electron transport layer can be optimized, defects are reduced, and non-radiative recombination of carriers is inhibited; the tunneling layer can achieve a comprehensive passivation effect on the perovskite light absorption layer, the interface state density is reduced, the space charge limiting effect established by the selective contact passivation layer of the discontinuous patterned structure promotes longitudinal separation of carriers, the selective transportation of the carriers can be improved, reverse carrier injection is reduced, and the performance of the perovskite light absorption layer is improved. Therefore, the efficiency and the stability of the perovskite solar cell are improved.