This invention relates to a
tungsten-doped
tin dioxide nanopowder, its preparation method, and its application in
semiconductor-type gas-sensitive elements. The method for preparing the
tungsten-doped
tin dioxide nanopowder includes the following steps: dissolving a soluble
tungsten compound and a soluble
tin compound in an
aqueous solution containing a surfactant, and adding a complexing agent to obtain a homogeneous
metal ion mixed solution; adding a precipitant to the
mixed solution under stirring conditions to adjust the pH to 2-6, causing a
metal hydroxide precursor to precipitate; aging,
solid-liquid separation, washing, and
drying the precipitate to obtain a precursor
powder; adding a dispersant to the precursor
powder and mixing evenly; and calcining to obtain the tungsten-doped
tin dioxide nanopowder. The tungsten-doped
tin dioxide nanopowder of this invention can be used in the preparation of
semiconductor-type gas-sensitive sensors,
ultraviolet detectors,
lithium-
ion battery
anode materials, catalysts, or transparent conductive films.