154 results about "Doped oxide" patented technology

The embodiment of the invention relates to the photovoltaic field, and provides a back contact solar cell and a preparation method thereof, and a photovoltaic module, and the back contact solar cell comprises a substrate, and first doped regions and second doped regions which are arranged in a staggered manner; the first passivation contact layer is positioned in the first doped region; the second passivation contact layer is positioned in the second doped region; doped oxide layers, each doped oxide layer comprising a first portion and a second portion, the first portion being located on the surface of the first passivation contact layer; the second part is located on the second doped region; the connecting layer is located in a partial region of the first part, further surrounds a partial region of the second part and is electrically connected with the second passivation contact layer, and the connecting layer is located on the side face of the first passivation contact layer and is electrically connected with the first passivation contact layer. The back contact solar cell provided by the embodiment of the invention at least can improve the hot spot effect and increase the photoelectric conversion efficiency.

The invention discloses a method for synthesizing an oxide dispersion strengthened molybdenum-rhenium alloy through a liquid-liquid doping process. The method comprises the following steps that S1, a molybdenum-rhenium mixed solution is prepared; s2, preparing a molybdenum-rhenium-doped mixed solution, namely dissolving precursor nitrate of an oxide into water, and then adding into the molybdenum-rhenium mixed solution; s3, heating treatment is conducted, specifically, the molybdenum-rhenium-doped mixed solution is mechanically stirred, then water is evaporated through heating to obtain a crystallized product, and then the crystallized product is filtered, dried and sieved to obtain composite powder; s4, calcining and thermal decomposition: calcining the composite powder to obtain pyrolysis powder; s5, thermal reduction is conducted, specifically, hydrogen is introduced into the muffle furnace, and the pyrolysis powder is reduced into oxide-doped molybdenum-rhenium alloy powder; and S6, bar preparation is conducted, specifically, the bar is obtained through cold isostatic pressing, high-temperature hydrogen sintering, forging and rotary swaging treatment. The oxide is stably dispersed in the molybdenum-rhenium alloy in a nanoscale form, and the performance of the alloy at the high temperature can be remarkably improved.

The invention relates to the technical field of solar cells, and provides a doped oxide target material for a solar cell, which is prepared by simultaneously carrying out composite doping with high-purity indium oxide according to different proportions by using one or two of wide-band gap elements of Ti, Zn, A < l > and Ga, one or two of high-valence metal elements of Ta, Mn, Zr, W and Mo, and one or two of rare earth elements of La, Nd, Sm, Ce, Pr and Y. On the basis of obtaining a high-density target material, a PVD thin film preparation process is optimized, and a metal oxide thin film with high mobility and high carrier concentration for a solar cell window layer is obtained. Through composite doping of wide-band-gap elements, high-valence elements and rare earth elements in a specific proportion and through the comprehensive effect of different types of doped elements, the carrier concentration is synchronously improved on the basis of improving the mobility of the thin film, and the transmittance is not negatively influenced while the carrier concentration is improved.

The invention relates to a purple-light-excited blue-light fluorescent material for a sunlight-like LED (light-emitting diode) as well as a preparation method and application of the blue-light fluorescent material. The chemical expression of the fluorescent material is Ca2LuZr2Al1. 5Ga1. 5O12: xCe < 3 + >, wherein x is more than or equal to 0.02 and less than or equal to 0.07. The blue light fluorescent material for the purple light excitation type sunlight LED is a brand new and unreported purple light excitation Ce < 3 + > doped oxide blue light emission fluorescent material, the fluorescent powder has a wide excitation band, the effective absorption range covers 300-450 nm, the fluorescent powder can be excited by purple light, and blue light with the central wavelength being 485 nm is emitted. The fluorescent powder has the advantage of stable physical and chemical properties, can be prepared by adopting a conventional solid-phase reaction method, has the characteristics of simple preparation process and facilitation of industrial production, and can be used as a good candidate material for wide application of a next-generation full-spectrum illumination white light LED (light-emitting diode). The fluorescent powder can be completely and well matched with the existing purple light chip, meets the commercial market requirements, and is suitable for application of white light LEDs, sunlight-like LEDs, full-spectrum LEDs and the like.

The invention provides a titanium-based ceramic target material and a preparation method and application thereof.The titanium-based ceramic target material is prepared from, by mass, 96.4 wt%-98.3 wt% of titanium oxide and 1.7 wt%-3.6 wt% of doped oxide, and the doped oxide is prepared from, by mass, 0.8 wt%-1.5 wt% of niobium oxide, 0.5 wt%-1.0 wt% of tantalum oxide, 0.3 wt%-0.8 wt% of tungsten oxide and 0.1 wt%-0.3 wt% of aluminum oxide. According to the method, the high-performance titanium-based ceramic target material is prepared by adopting a normal-pressure sintering method through multi-element synergistic doping and dynamic regulation and control of the sintering atmosphere, the titanium-based thin film prepared by sputtering the titanium-based ceramic target material can form a laminated thin film structure with an indium tin oxide (ITO) thin film, and high conductivity, high visible light transmittance and high electron mobility are achieved; and the actual requirements in the field of silicon-based and perovskite solar cells are met.

The invention provides a low-temperature low-power-consumption manganese-zinc ferrite material and a preparation method thereof. The manganese-zinc ferrite material is prepared from main components, auxiliary components and a mineralizer, the main components comprise, by mole percentage, 53.5%-55.5% of Fe2O3, 8.5%-11.5% of ZnO and the balance Mn3O4, and the total percentage is 100%; the auxiliary component is composed of CaO, SiO2, Nb2O5, Co2O3, TiO2 and SnO2, and the mineralizing agent is composed of WO3 and Bi2O3. The low-temperature power consumption characteristic of the material is improved by reducing the magnetocrystalline anisotropy of the power manganese-zinc ferrite material. According to the present invention, the iron passing formula is adopted as the main formula, the doped oxide capable of improving magnetocrystalline anisotropy is matched so as to improve the low-temperature magnetocrystalline anisotropy constant of the power manganese zinc ferrite material, and the oxide capable of improving magnetocrystalline anisotropy and the oxide capable of improving resistivity are matched so as to achieve the low-temperature and low-power consumption effect;

A solar cell and a preparation method thereof are provided. A method for preparing the solar cell includes following steps: forming an amorphous silicon layer on a tunneling oxide layer at a first side; forming a doped polycrystalline silicon layer in a first process by a diffusion doping treatment; forming a doped oxide layer on the doped polycrystalline silicon layer in a second process; and after the doped oxide layer is formed, doping the first side selectively and heavily by a laser doping process, and forming a selective emitter region in a heavily doped region.

The invention discloses a modified ATO ceramic target material and a preparation method thereof. The modified ATO ceramic target material comprises the following raw material components in parts by weight: 89-98 parts of tin oxide, 1-10 parts of antimony oxide and 1-3 parts of doped oxide, and the doped oxide is at least one of ZnO, Bi2O3, TiO2 and Ta2O5. The specific metal oxide is adopted to perform doping modification on the ATO ceramic target material, the sintering atmosphere and the sintering temperature system are controlled, and the characteristics of the doped oxide and the interaction between the doped oxide and SnO2 are utilized, so that the sintering density of the target material is improved, pores of grain boundaries are eliminated, and the target material is prepared. And the conductivity of the target material and the stability of the target material in the magnetron sputtering process are further improved. The relative density of the modified ATO ceramic target material is larger than or equal to 97.8% and even can reach 99.2%; and the resistivity is less than or equal to 5.2 * 10 <-3 > omega.cm and even can reach 3.8 * 10 <-3 > omega.cm.

The invention discloses a manganese-doped Ir-Ta oxide composite coating titanium anode and a preparation method thereof. The titanium anode comprises an insoluble titanium base material, an oxide middle layer and an oxide catalyst layer which are sequentially arranged, wherein the oxide catalyst layer is composed of an iridium (Ir) oxide, a tantalum (Ta) oxide and a doped manganese (Mn) element. The preparation method comprises the following steps: carrying out sand blasting and surface treatment on a titanium substrate to increase the roughness and binding force of the surface, then carrying out proper intermediate layer coating on the surface of the substrate, and finally preparing the manganese-doped Ir-Ta oxide composite coating on the surface of the intermediate layer. Compared with a traditional titanium anode, the prepared manganese-doped Ir-Ta oxide composite coating titanium anode has the advantages of being higher in reaction specific surface area, lower in oxygen evolution potential, longer in catalytic life and the like, and meanwhile the transition metal element manganese is higher in reserve, lower in price and high in oxygen evolution activity.

The invention belongs to the technical field of ceramic preparation, and particularly relates to a tin oxide ceramic material and a preparation method and application thereof. According to the invention, oxygen vacancies are introduced into the conductive doped oxide, so that the conductivity of tin oxide is greatly improved; the sintering aid promotes liquid-phase sintering of the biscuit in the sintering process, so that the problem of sintering difficulty caused by volatilization of tin oxide at a high temperature of 1200 DEG C is solved, particle rearrangement and mass transfer processes are greatly promoted, and sintering densification of tin oxide is promoted; due to the introduction of gallium oxide, not only is pinning at the tin oxide grain boundary to prevent grain growth and obtain uniform and fine grain size, but also the conductivity of the ceramic material is further improved. The tin oxide ceramic material obtained by the invention has the characteristics of high density, low resistivity and uniform and fine crystal grains. Meanwhile, the preparation process is simple and suitable for industrial production.

The invention relates to an electrophoresis codeposition-in-situ thermal conversion short-process preparation method of a multi-element doped Co-Mn spinel protective coating. According to the method, spinel precursor powder does not need to be prefabricated, commercial Co3O4, Mn3O4, a rare earth oxide R2O3 (R is Y, Ce or La) and a doped oxide XxOy (X is Cu, Ni or Fe) are directly dispersed in an organic mixed solvent in proportion to form a stable suspension, and after electrophoresis codeposition, the stable (Co, Mn, R, X) 3O4 spinel coating is formed in situ through three-stage heat treatment of impurity removal, conversion and structure homogenization. Compared with a traditional sol-gel method for synthesizing a precursor and then performing electrophoresis, the method has the advantages that the process is remarkably simplified, the period is shortened, the cost is reduced, thermal mismatch caused by Cr volatilization and Fe phase precipitation is effectively inhibited, and the compactness and high-temperature stability of the coating are improved. The method has the advantages of being short in process, low in equipment requirement, high in doping flexibility and the like, and is suitable for interface anti-oxidation protection of an SOFC metal connector and surface protection of other high-temperature electrochemical system metal parts.

The invention discloses a low-thermal-conductivity anti-sintering thermal barrier coating material as well as a preparation method and application thereof, and belongs to the technical field of coating materials. The low-thermal-conductivity anti-sintering thermal barrier coating material comprises a base phase oxide (ZrO2), four groups of solid solution doped rare earth oxides (Y2O3, Yb2O3, Gd2O3 and Nd2O3) and a group of second phase doped oxides (Al2O3), the four groups of solid solution doped rare earth oxides exist in ZrO2 in a solid solution form to form a ZrO2 solid solution, and Al2O3 is doped in the ZrO2 solid solution in a second phase form; wherein the ion radiuses and cation valences of Yb2O3, Gd2O3 and Nd2O3 are different from the cation radiuses and valences of the base phase oxide or the main stable oxide (Y2O3). The low-heat-conduction anti-sintering thermal barrier coating material is sprayed on the surface of a base body or other coatings, and compared with a coating formed by a traditional YSZ material, the formed thermal barrier coating has the low heat conduction performance and the anti-sintering performance.

The present invention provides a back-contact solar cell, a manufacturing method thereof, and a photovoltaic assembly in the field of photovoltaics. The back-contact solar cell includes a substrate and alternating first and second doped regions, a first passivation contact layer located in the first doped regions and a second passivation contact layer located in the second doped regions, a doped oxide layer including a first portion located on the surface of the first passivation contact layer and a second portion located in the second doped regions, and a connecting layer located on a portion of the first portion, surrounding a portion of the second portion, and electrically connected to the second passivation contact layer, and located on a side of the first passivation contact layer and electrically connected to the first passivation contact layer. [Effects] At the very least, the hot spot effect can be improved and the photoelectric conversion efficiency can be increased.

The invention provides self-recovery chromium ion doped oxide mechanoluminescence fluorescent powder as well as a preparation method and application thereof. The chemical general formula of the self-recovery mechanoluminescence fluorescent powder is Al2 (1-x) O3: 2xCr < 3 + >, wherein x is equal to 0.3%-5%. The preparation method of the self-recovery mechanoluminescence fluorescent powder comprises the following steps: a, respectively weighing aluminum oxide and chromium oxide according to the molar ratio of each element in the chemical general formula Al2 (1-x) O3: 2xCr < 3 + >; b, grinding and uniformly mixing the weighed raw materials, and firing in air at the temperature of 1300 DEG C for 6 hours; and c, taking out the fired sample, and uniformly grinding to obtain the chromium ion doped oxide mechanoluminescence fluorescent powder. According to the chromium ion doped oxide mechanoluminescence fluorescent powder disclosed by the invention, a measured emission band main peak is located at 694 nm and is located at a biological first window (600-900 nm), and the chromium ion doped oxide mechanoluminescence fluorescent powder is expected to be used as a near-infrared mechanoluminescence biological probe; and the fluorescent powder has the advantages of no need of pre-irradiation and instant self-recovery of luminescence.

The invention discloses a preparation method and device of a nickel oxide doped oxide target material for perovskite, and the method comprises the steps: carrying out spray granulation on obtained defoamed mixed slurry by using a sprayer, then uniformly stirring the mixed slurry subjected to spray granulation, screening the uniformly stirred mixed slurry to obtain mixed powder of nickel oxide and an additive, and carrying out spray granulation on the mixed powder to obtain the nickel oxide doped oxide target material for perovskite. The method has low requirements on powder granularity, and the powder utilization rate can reach 90%; the obtained nickel oxide and additive mixed powder is subjected to pressure forming through a hydraulic machine to obtain a nickel oxide doped oxide target blank, the pressure of a pressed product is reduced to 120-160 Mpa through the method, the pressing pressure is greatly reduced compared with the conventional pressure of 250-300 Mpa of the pressed product, and the service life of cold isostatic pressing is greatly prolonged; the refractive index of the finally obtained nickel oxide doped oxide target material is high, and the refractive index of the nickel oxide doped oxide target material is generally 1.6 or above under the wave band of 550-650 nm.

The invention relates to an ultraviolet / purple light excited blue fluorescent material as well as a preparation method and application thereof. The Eu < 2 + > doped oxide-based blue fluorescent material has a chemical expression of BaHfSi2O7: xEu < 2 + >, and x is more than or equal to 0.003 and less than or equal to 0.02. Compared with the prior art, the purple-light-excited blue fluorescent material provided by the invention is brand-new and unreported ultraviolet-excited Eu < 2 + >-doped oxide-based 472nm blue-light-emitting fluorescent powder, the fluorescent powder has a wide excitation band, the excitation spectrum range covers 200-450nm, the emission spectrum range covers 390-680nm, and the fluorescent material has a good fluorescent effect under the excitation of 304nm near ultraviolet light. The blue light with the central wavelength of 472nm is emitted, and meanwhile, the blue light emitting material has excellent stability and luminous efficiency. The fluorescent powder can be prepared by adopting a conventional solid-phase reaction method, has the characteristics of simple preparation process and facilitation of industrial production, can be combined with a near ultraviolet chip to generate white light, can be used as a good candidate material for wide application of a white light LED, and can meet the urgent demand of a current healthy illumination LED light source.

The invention relates to a purple light-excited cyan light-emitting fluorescent material as well as a preparation method and application thereof. The cyan light emitting fluorescent material is a Ce < 3 + > doped oxide cyan light emitting fluorescent material, the chemical expression of the cyan light emitting fluorescent material is SrCa0. 7Mg0. 3Lu4-xO8: xCe < 3 + >, and x is more than or equal to 0.003 and less than or equal to 0.05. The preparation method comprises the following steps: weighing a strontium source compound, a calcium source compound, a magnesium source compound, a lutetium source compound and a cerium source compound according to a stoichiometric ratio of a chemical expression of the green light emitting fluorescent material, grinding and uniformly mixing to obtain a mixture; sintering the mixture at high temperature, and cooling to obtain the purple light excited cyan fluorescent material. Compared with the prior art, the method has the advantages of optimizing the crystal field environment, constructing a cyan fluorescent material with wide-spectrum excitation characteristic, high luminous efficiency and excellent thermal stability and the like.

The invention relates to the technical field of brass materials, in particular to a high-strength and high-toughness brass material and a preparation method thereof.The preparation method comprises the steps that a porous oxide film layer is prefabricated on the surface of brass through plasma electrolytic oxidation, and an oxide film layer doped with double-bond silver-loaded graphene oxide is constructed on the surface of the brass; the preparation method comprises the following steps: firstly, preparing modified MXene, then preparing a photocurable hole sealing coating for hole sealing treatment, introducing double-bond silver-loaded graphene oxide and the modified MXene as fillers into the photocurable hole sealing coating, firstly performing sulfhydrylation on the MXene by using 3-mercaptopropyltriethoxysilane, and then grafting a double-bond-containing bis-benzimidazole ring derivative through light click to obtain the modified MXene; vinyl-terminated polyurethane is used as a cross-linking agent, o-phenyl phenoxyethyl acrylate, butyl acrylate, glycidyl methacrylate and octadecyl acrylate are compounded to serve as an acrylic monomer, a diluent and a solvent are introduced, a complex cross-linked network is constructed, and the service life of the brass material is prolonged.

The invention belongs to the technical field of target materials, and discloses a multi-element doped indium germanium oxide ceramic target material and a preparation method thereof. The ceramic target material comprises indium oxide, germanium oxide and doped oxide, and the doped oxide is one or two of cerium oxide, hafnium oxide or titanium oxide; the preparation method comprises the following steps: mixing In2O3 powder, GeO2 and doped oxide powder, carrying out ball milling, drying, grinding and sieving on the mixed powder to obtain mixed oxide powder, sequentially carrying out compression molding and cold isostatic pressing on the mixed oxide powder to obtain a target material green body, putting the target material green body in an oxygen atmosphere, and carrying out sintering to obtain the target material. A multi-element doped indium germanium oxide ceramic target material is obtained by using a multi-stage sintering method; by adjusting the doping elements in the target material, the proportion of the doping elements and the staged sintering temperature and time, the density and the conductivity of the target material can be remarkably improved.

The invention discloses preparation and application of a heterogeneous element doped oxide composite catalyst. The preparation method comprises the following steps: stirring an iron source, carbon nanotubes and triton in a solvent, adding a sodium borohydride solution at 2-10 DEG C, and rapidly stirring and uniformly mixing; aging the solution at 2-10 DEG C, collecting a sample, washing and drying; carrying out heat treatment to obtain a gamma-Fe2O3 precursor loaded on the carbon nano tube; stirring the gamma-Fe2O3 precursor loaded on the carbon nano tube and a heterogeneous element source in a solvent, evaporating to dryness and grinding; and performing heat treatment to obtain the composite catalyst. The gamma-Fe2O3 and carbon nanotube in-situ loaded composite material is used as a precursor, the structural stability of the substrate is effectively improved, meanwhile, the intrinsic catalytic activity of the gamma-Fe2O3 can be effectively improved through doping of multi-element heterogeneous elements, and compared with a fractional-step doping strategy, higher catalytic activity and higher utilization value are shown.

A method includes forming a semiconductor region, forming a gate spacer over the semiconductor region, forming a source / drain region aside of the semiconductor region, wherein the source / drain region is of p-type, and forming a gate dielectric over the semiconductor region. The gate dielectric is formed in a space between opposing portions of the gate spacer. A ruthenium oxide layer is formed over the gate dielectric, and acts as a part of a work-function layer of a gate electrode. The method further includes incorporating silicon into the ruthenium oxide layer.

The embodiment of the invention discloses a submicron grain GTO sputtering target material and a preparation method thereof. The method comprises the following steps: ball-milling and mixing a main oxide tin oxide, a doped oxide gallium oxide, a dispersing agent, water and a binder to obtain mixed raw material slurry; granulating and molding the raw material slurry, and carrying out compression molding to obtain a molded GTO target material biscuit; the formed GTO target material biscuit is subjected to multi-step sintering in a non-pressure oxygen atmosphere, and the submicron grain GTO sputtering target material is obtained; wherein the multi-step sintering comprises the following steps: in the first step of sintering, the first sintering temperature is 700-800 DEG C, the heating rate is 1-2 DEG C / min, and heat preservation is performed for 4-7 hours; second-step sintering: the second sintering temperature is 1200-1400 DEG C, the heating rate is 2-5 DEG C / min, and the temperature is kept for 10-40 minutes; a third step of sintering, specifically, the third sintering temperature is 1100-1300 DEG C, the cooling rate is 10-15 DEG C / min, and heat preservation is conducted for 10-25 h; fourthly, sintering is conducted, the fourth sintering temperature is 400-500 DEG C, the cooling rate is 2-5 DEG C / min, and heat preservation is conducted for 1-3 h; and naturally cooling to room temperature after the sintering procedure is finished.

The invention relates to the technical field of solid electrolyte material preparation, and discloses a method for preparing doped oxide-based solid electrolyte powder, and the method comprises the following steps: dissolving a titanium source substance, an aluminum source substance, a lithium source substance and a dopant source substance in one or a mixed solvent of two of ethanol, propanol and isopropanol to form a solution A; dissolving a phosphorus source substance, a lithium source substance and a dopant source substance in one or a mixed solvent of two of purified water and ethanol to form a solution B; under the stirring condition in a reaction kettle, dropwise adding the solution A into the solution B, and continuously stirring after dropwise adding to obtain a liquid precursor. Atom-level and molecular-level mixing dispersion of the oxide-based solid electrolyte raw materials in a liquid phase is realized, and compared with the characteristic that only macromixing can be realized in a ball milling method, the preparation method has the advantages that the preparation process is simple, and the cost is low. The uniformity of each component in the material can be obviously improved, so that the performance of the final material is improved.

The invention discloses a preparation method of an image sensor, which comprises the following steps of: after etching a groove on a substrate, depositing an oxide layer (BSG) doped with P-type ions on the surfaces of the groove and the substrate, introducing and activating the P-type doped ions by adopting a low-temperature enhanced diffusion and / or laser instantaneous thermal annealing process, and simultaneously, not increasing the thermal budget of a device. And the etching damage on the surface of the groove is repaired, and the groove isolation performance of the image sensor is improved.

The application discloses a non-noble metal and rare earth metal composite doped oxide photocatalyst and a preparation method thereof. The non-noble metal and rare earth metal composite doped oxide photocatalyst is prepared by using a liquid phase method or a solid phase method. The liquid phase method comprises the following steps: mixing and dissolving, hydrolysis gelation, high-temperature aging, solution replacement, drying and high-temperature heat treatment. The solid phase method comprises the following steps: mixing, drying and high-temperature heat treatment. The non-noble metal and rare earth metal composite doped oxide photocatalyst obtained by the application has the advantages of large specific surface area, high photocatalytic activity, long service period, uniform metal element dispersion and good application prospect in the fields of photocatalytic preparation of methane, methanol and formic acid and the like.

The application discloses a high-performance bismuth-free ZnO-Cr2O3-based pressure-sensitive ceramic and a preparation method and application of defect regulation, and belongs to the technical field of pressure-sensitive materials. The method comprises the following steps: ZnO, doped oxides, polyvinyl alcohol aqueous solution, tributyl phosphate and deionized water are ball-mixed to obtain mixed powder; after drying, sieving, granulating and compression molding, oxide-doped ZnO green bodies are obtained; after glue removal and sintering, high-performance bismuth-free ZnO-Cr2O3-based pressure-sensitive ceramic is obtained. The bismuth-free ZnO-Cr2O3-based pressure-sensitive ceramic is obtained by adopting a solid-phase sintering method, taking ZnO as main raw material, and doping multiple oxides for compression and sintering. Immovable acceptor defects and stable double Schottky barrier structures are formed in the oxides enriched at the ZnO grain boundaries, which provides an important technical thought for the electrical performance optimization of different system pressure-sensitive ceramics. The high-performance bismuth-free ZnO-Cr2O3-based pressure-sensitive ceramic has high nonlinearity coefficient and breakdown field strength and small leakage current density, and has a wide application prospect in miniaturized electronic circuit systems.

The invention belongs to the technical field of target materials, and particularly relates to a tin oxide-based composite target material and a preparation method thereof. The tin oxide-based composite target material provided by the invention comprises tin oxide, doped oxides and sintering aids, the doped oxides are antimony pentoxide, vanadium pentoxide, nickel oxide and tungsten trioxide, and the sintering aids are magnesium oxide and yttrium oxide. The antimony pentoxide, the vanadium pentoxide, the nickel oxide and the tungsten trioxide are used as doped oxides, so that the electrical and optical properties of the target material are effectively improved; magnesium oxide and yttrium oxide are adopted as sintering aids, grains are refined, and the compactness and the mechanical property of the target material are improved; atomic-scale mixing of part of elements is achieved through a sol-gel method, then atomic-scale doping is conducted through a high-energy ball milling method, the distribution deviation of the elements in a matrix is reduced, sintering is conducted through a discharge plasma furnace, and the volatilization loss of the elements and the pore defect in the target material are reduced.

The invention discloses a preparation method of a cladding laser single-crystal optical fiber, which comprises the following steps of: punching a central axis of a single-crystal crystal bar by adopting a punching technology, and punching the central axis of the single-crystal crystal bar to obtain a single-crystal optical fiber cladding; the method comprises the following steps: vertically inserting a single-crystal optical fiber cladding into a rare earth ion doped oxide single-crystal melt or a rare earth ion doped fluoride single-crystal melt, and filling the rare earth ion doped oxide single-crystal melt or the rare earth ion doped fluoride single-crystal melt into the single-crystal optical fiber cladding by utilizing a capillary phenomenon in an inert atmosphere, so as to obtain the rare earth ion doped oxide single-crystal melt or the rare earth ion doped fluoride single-crystal melt. Meanwhile, the melt is crystallized in a single direction by changing the temperature gradient in the temperature field and solidified into a laser single crystal optical fiber core in the single crystal optical fiber cladding, and then the cladding laser single crystal optical fiber is obtained after cooling, annealing and end face treatment. The cladding laser single-crystal optical fiber prepared by the method is uniform in diameter, not easy to crack and better in optical quality, and can further promote the preparation of a single-crystal optical fiber laser with high light beam quality and high power.

A ceramic material, includes: a magnesium oxide and a doped oxide, wherein the doped oxide includes cobalt tetroxide, europium trioxide or manganese dioxide, and wherein a weight ratio of magnesium oxide to the doped oxide is 97:1 to 85:12. In addition, the disclosure also provides a method for manufacturing a ceramic material, including: mixing a magnesium oxide powder and a doped oxide powder, and sintering the mixed magnesium oxide powder and the doped oxide powder at a temperature of 1300° C. to 1650° C. to obtain the ceramic material, wherein the doped oxide powder includes a cobalt tetroxide powder, a europium trioxide powder or a manganese dioxide powder, and wherein a weight ratio of the magnesium oxide powder to the doped oxide powder is 99.9:0.1 to 92:8.

The invention belongs to the technical field of metal material high-temperature friction wear-resistant materials, and particularly discloses a high-temperature self-lubricating silver-molybdenum film and a preparation method and application thereof.The high-temperature self-lubricating silver-molybdenum film is arranged on a high-temperature-resistant substrate, and the high temperature ranges from 300 DEG C to 600 DEG C; in the high-temperature self-lubricating silver-molybdenum thin film, the atom percentage content of molybdenum is 70-80 at%, and the atom percentage content of silver is 20-30 at%; and the thickness of the high-temperature self-lubricating silver-molybdenum film is 2-5 [mu] m. The silver-molybdenum thin film with specific components is prepared on the high-temperature-resistant substrate through the double-target focusing co-deposition technology, a lubricating film is formed on the surface in the high-temperature friction and wear process on the basis that no oxide or lubricating phase is doped in advance, the wear rate of the thin film is reduced, and therefore the substrate is protected, and the silver-molybdenum thin film can be applied to the high-temperature friction environment.