316 results about "Doped oxide" patented technology

Doped, pyrogenically prepared oxides of metals and/or non-metals which are doped with one or more doping components in an amount of 0.00001 to 20 wt. %. The doping component may be a metal and/or non-metal or an oxide and/or a salt of a metal and/or a non-metal. The BET surface area of the doped oxide may be between 5 and 600 m2/g. The doped pyrogenically prepared oxides of metals and/or non-metals are prepared by adding an aerosol which contains an aqueous solution of a metal and/or non-metal to the gas mixture during the flame hydrolysis of vaporizable compounds of metals and/or non-metals.

Provided are a thin film transistor, to which a boron-doped oxide semiconductor thin film is applied as a channel layer, and a method of fabricating the same. The thin film transistor includes source and drain electrodes, a channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The channel layer is an oxide semiconductor thin film doped with boron. Therefore, it is possible to remarkably improve electrical characteristics and high temperature stability of the thin film transistor.

The invention belongs to the field of a luminescent material and discloses a metal-nanoparticle-doped oxide luminescent material with a hollow structure and a preparation method thereof. The chemical formula of the oxide luminescent material is nM:yC@Ln2-xEuxO3; wherein M is one type of Ag, Au, Pt, Pd and Cu nano-particles, Ln is one of Gd, Y, La and Lu, C is a small carbon ball, x is greater than 0 but less than or equal to 1.5, n is the molar ratio of M nanoparticles to Ln2-xEuxO3 and is greater than 0 but less than or equal to 1*10-3, y is the molar ratio of C to Ln2-xEuxO3 and is greater than 0 but less than or equal to 1, @ means coating, Ln2-xEuxO3 is a shell, nM is a core, and nM:yC is of a hollow structure. The prepared oxide luminescent material has excellent luminescent performance. The preparation method has the advantages that the operation is simple, no pollution can be caused, the process conditions are simple and can be easily controlled, the preparation temperature is low and the like, energy can be saved, and industrial production can be facilitated.

Etch solutions for selectively etching doped oxide materials in the presence of silicon nitride, titanium nitride, and silicon materials, and methods utilizing the etch solutions, for example, in the construction of container capacitor constructions are provided. The etch solutions are formulated as a mixture of hydrofluoric acid and an organic acid having a dielectric constant less than water, optionally with an inorganic acid, and a pH of 1 or less.

The invention relates to a non-vacuum solar spectrum selective absorption coating and a preparation method thereof. The preparation method comprises the following steps: (1) selecting copper or stainless steel with low infrared emissivity as a base material; (2) selecting oxide resistant to high-temperature oxidation, nitride and complex or doped oxide as a film material, wherein a metal or an alloy serves as a bonding force increased layer, metal nitride or pure metal serves as a high infrared reflecting layer, an absorption layer is composed of two conducting particle ceramic layers with different metal nitride conducting particle volume fractions, and aluminium nitride and aluminium oxide serve as an antireflection layer; (3) controlling the components and contents of different film materials by controlling gas flow and sputtering power; (4) cleaning the base material before the base material is placed into a vacuum chamber, and carrying out argon ion bombarding on the surface of the base material before sputtering is carried out; and (5) obtaining a multilayer coating, wherein the thickness of the coating is less than 500nm, and the coating has high absorption rate alpha (0.9-0.97) in the solar spectrum range (0.3-2.5microns) and has extremely low emissivity epsilon (0.02-0.18) in the infrared region (2.5-50microns).

A semiconductor device includes a substrate having a trench, a sidewall liner that covers inner walls of the trench, a doped oxide film liner on the sidewall liner in the trench, and a gap-fill insulating film that buries the trench on the doped oxide film liner. In order to form the doped oxide film liner, an oxide film liner is doped with a dopant under a plasma atmosphere. Related methods are also disclosed.

A semiconductor processing method is provided for making contact openings. It includes depositing several insulative layers and performing an anisotropic etch. One layer is a conformal oxide covering the contact area and adjacent structures. A second layer is a breadloafed oxide deposited over the contact area and adjacent structures. A third layer is a doped oxide deposited over the two lower layers. The anisotropic etch is performed through the oxide layers to the contact area located on a lower substrate. The etch is selectively more rapid in the third oxide than in the two other oxides. The breadloafed oxide provides additional protection and reduces the risk of etch-through to conductive structures adjacent the contact area. An alternate embodiment replaces the two lowest oxide layers by a breadloafed nitride layer. In this embodiment, the anisotropic etch is selectively more rapid in oxides than in nitrides.

The invention relates to a high potential gradient zinc oxide pressure-sensitive resistor material and a preparation process thereof. The high potential gradient zinc oxide pressure-sensitive resistor material with uniform particle sizes is obtained by weighing a main material ZnO, a doping oxide, and a product rare earth oxide obtained by carrying out thermal decomposition on a rare earth oxalate or/and carbonate or/and hydroxide according to proportions, carrying out high energy wet grinding, drying, presintering at 200-800DEG C, carrying out high energy dry grinding, and sintering at 800-1100DEG C. The preparation process of the invention has the advantages of simplicity, low cost, environmental protection and low energy consumption, and the prepared zinc oxide pressure-sensitive resistor material can be used for preparing high quality lightning arrester products for ultrahigh electric power systems.

The invention is a method for constructing an integrated circuit structure and an apparatus produced by the method. The method generally comprises constructing an integrated circuit structure by disposing a layer of doped oxide, the dopant being iso-electronic to silicon, and then reflowing the layer of doped oxide. Thus, the apparatus of the invention is an integrated circuit structure comprising a reflowed layer of doped oxide wherein the dopant is iso-electronic to silicon. In one particular embodiment, the method generally comprises constructing an integrated circuit feature on a substrate; disposing a layer of doped oxide, the dopant being iso-electronic to silicon, over the integrated circuit feature and the substrate in a substantially conformal manner; reflowing the layer of doped oxide; and etching the insulating layer and the oxide. Thus, in this particular embodiment, the apparatus comprises an integrated circuit feature constructed on a substrate and a reflowed layer of doped oxide, the dopant being iso-electronic to silicon, disposed over the integrated circuit feature and the substrate.

Embodiments of the invention generally provide a method of forming an air gap between conductive elements of a semiconductor device, wherein the air gap has a dielectric constant of approximately 1. The air gap may generally be formed by depositing a sacrificial material between the respective conductive elements, depositing a porous layer over the conductive elements and the sacrificial material, and then stripping the sacrificial material out of the space between the respective conductive elements through the porous layer, which leaves an air gap between the respective conductive elements. The sacrificial material may be, for example, a polymerized alpha terpinene layer, the porous layer may be, for example, a porous carbon doped oxide layer, and the stripping process may utilize a UV based curing process, for example.

A capacitor anode (1) includes a substrate (10) which is formed from an alloy, metal, or metal compound which has a high tensile yield strength and high elastic modulus. The material has a composition which can be anodized, yielding an adherent and compressively stressed dielectric film (12) of pure, mixed, alloyed, or doped oxide that has a high usable dielectric strength (e.g., over 50 V/μm) and high dielectric constant (e.g., 20 to over 10,000). A capacitor formed from the anode has a high energy density.

A trench isolation structure is formed in a substrate. One or more openings are formed in a surface of the substrate, and a liner layer is deposited at least along a bottom and sidewalls of the openings. A layer of doped oxide material is deposited at least in the openings, and the substrate is annealed to reflow the layer of doped oxide material. Only a portion near the surface of the substrate is removed from the layer of doped oxide material in the opening. A cap layer is deposited atop a remaining portion of the layer of doped oxide material in the opening.

The invention belongs to the field of a precious metal doped oxide semiconductor thin film material and in particular relates to an Ag/TiO2 thin film material and a preparation method thereof. The invention is mainly characterized in that a sol-gel method and a solvent thermal synthesis method are combined, a TiO2 seed layer is prepared on the surface of a substrate by adopting the sol-gel method, and then a Ag/TiO2 nano slice is grown on the surface of the substrate of the TiO2 seed layer by adopting the solvent thermal synthesis method, thus the Ag/TiO2 thin film material which is composed of the Ag/TiO2 nano slice and is vertically grown on the substrate is obtained. The Ag/TiO2 thin film material provided by the invention has the advantages of titanium dioxide semiconductor material and silver and plays an important role in the fields such as antibacterial materials, solar cells, photocatalysis, deodorization, self cleaning and the like.

The invention discloses a high-emission transparent heat-insulating paint in atmospheric window regions. The main material of the transparent heat-insulating paint is prepared from the following components in parts by weight: 30-70 parts of polymer emulsion, 10-30 parts of nano doped oxide powder, 2-30 parts of high-emission nano powder in atmospheric window regions, 1-10 parts of anionic dispersant, 2-20 parts of nonionic dispersant, 0.5-2 parts of defoaming agent, 0-5 parts of thickening agent, 1-2 parts of film forming assistant, 1-2 parts of antifreezing agent, 1-2 parts of leveling agentand 5-20 parts of distilled water. The invention also discloses a preparation method of the transparent heat-insulating paint, which comprises the following steps: after evenly mixing the components,regulating the pH value to 8.5-9.5 with a multifunctional assistant AMP-95 to obtain the high-emission-rate transparent heat-insulating paint in atmospheric window regions. The paint has high emission rate in atmospheric window regions, and can implement effective heat dissipation.

A method for making a semiconductor device, includes forming an oxide layer on a silicon substrate, forming a nitride layer over the oxide layer; depositing one of a doped oxide layer and an undoped porous oxide layer on the nitride layer, etching trenches through the one of the doped layer and the undoped porous oxide layer, the nitride layer, and the oxide layer, depositing an undoped oxide layer to fill the trenches, and patterning the undoped oxide by chemical mechanical polishing (CMP).

The invention discloses a preparation method for a low-temperature nanometer lithium iron phosphate cathode material. The preparation method comprises the following steps of: adding a lithium source compound, a ferric source compound, a phosphorous source compound and water according to a proportion for mixing, adding metal ion doped oxide and a primary carbon source for mixing, performing primary high-energy superfine pulverization for 2 to 3 hours, performing spray-drying to obtain powder, and performing sieving; pre-treating the powder in an inert atmosphere at the temperature of 300 to 500 DEG C for 2 to 10 hours, performing cooling, adding a secondary carbon source and water, stirring the mixture, performing secondary high-energy superfine pulverization to obtain spherical powder, and performing sieving; and performing jet milling on the spherical powder, performing treatment in the inert atmosphere at 500 to 600 DEG C for 6 to 30 hours, performing thermal treatment at the high temperature of 600 to 900 DEG C for 10 to 30 hours, and performing cooling to obtain the low-temperature nanometer lithium iron phosphate cathode material with the granularity of 60 to 70 nanometers. When the low-temperature nanometer lithium iron phosphate cathode material is used for manufacturing the anode of a lithium ion battery, the battery has high low-temperature discharge performance.

Laser marking additives of at least one the core particle selected from the group consisting of copper oxide, chromium oxide, ceramic yellow, cobalt oxide, tungsten oxide, vanadium oxide, titanium oxide, ceramic red, molybdenum oxide, zinc sulfide and any combination thereof, and a coating covering at least part of the core particle comprising at least one oxide of a metal selected from the group consisting of Si, Ti, Ce, Zr, Zn, Al, Ba, Sr, La, Mg, Ca, V, Ta and mixtures thereof. This powder is used with 1064 nm wavelength laser (semiconductor lasers, fiber lasers) to change color in a plastic or polymer substrate to give contrast in laser marking plastics.

Etching chemistries for etching nitride materials selective to oxide materials and selective to resist patterning materials are disclosed along with methods of etching nitride materials, such as dielectric nitride materials and metal nitride materials. The etching chemistries and methods incorporate using an ultra-dilute (approximately 1500:1 to 2500:1) 49% hydrofluoric (HF) acid and optionally adding ozone (O₃) to the etching mixture that etches nitride materials selective to oxide materials, such as oxides doped with impurities or non-doped oxides, and resist patterning materials. The dilution of the HF acid will affect the selectivity of the etching solution (nitride material to the oxide or resist materials) and can be tailored to obtain a desired etching result.