23 results about "Nitride phosphor" patented technology

The invention discloses high-efficiency fluorescence conversion glass based on nitride red fluorescent powder composite binary germanium-phosphorus glass and a preparation method thereof, the high-efficiency fluorescence conversion glass is successfully prepared by taking binary germanium-phosphorus glass with specific components as a substrate and red nitride fluorescent powder as a luminescent material through low-temperature rapid sintering by a spark plasma sintering (SPS) technology. The fluorescent glass comprises the following raw materials: nitride red fluorescent powder and precursor glass powder, the precursor glass powder is prepared from the following raw materials in percentage by mole: 26 to 48 mol percent of GeO2 and 52 to 74 mol percent of P2O5, and the mass of the nitride red fluorescent powder is 1 to 7 percent of the mass of the total powder. Through a specific preparation process, the high-efficiency luminescence property, excellent thermal stability and high laser irradiation threshold value of the fluorescent glass are realized, and the high-performance requirement of laser illumination is met. Meanwhile, the preparation method is simple in preparation process, green, environment-friendly and low in production cost, and has a wide application prospect.

The invention discloses a boron nitride insulating ceramic material and a preparation method thereof. The boron nitride insulating ceramic material comprises the following raw materials in parts by weight: 60-80 parts of boron nitride, 40-60 parts of aluminum nitride, 20-30 parts of zirconium oxide, 10-20 parts of silicon carbide, 4-6 parts of nano yttrium oxide and 1-2 parts of cobalt. The preparation method comprises the following steps: (1) weighing the raw materials, and uniformly mixing; (2) wet ball milling; (3) drying; (4) performing low-pressure cold pressing, crushing and high-pressure cold pressing molding; and (5) carrying out hot pressed sintering and cooling. The boron nitride insulating ceramic material disclosed by the invention has the advantages of high resistivity, good insulativity, high bending strength, high heat conductivity and the like, and can be widely applied to high-purity boron nitride crucibles for molten metal, crucibles for sintering nitride fluorescent powder, silicon nitride, aluminum nitride and other ceramics and powder, setter plates, high-temperature furnace electrode insulators and protective tubes; and a boron nitride insulation assembly for a polycrystalline silicon ingot furnace, and the like.

The present application discloses a preparation method of spherical nitride phosphor, the spherical nitride phosphor and its application. The preparation method of the spherical nitride phosphor includes: (1) weighing Sr source, Ca source, Al source, Si source and Eu source according to the chemical dosage ratio of Sr 1‑x Ca x AlSiN3:Eu 2+ , mixing to obtain a mixture; (2) performing multi-stage calcination on the mixture under a protective atmosphere to obtain a calcined product; (3) dispersing the calcined product to obtain the spherical nitride phosphor. The spherical nitride phosphor prepared by the preparation method of the present application has good morphology uniformity, small particle size distribution and relatively smooth surface. At the same time, it has high target shooting concentration and good luminous efficiency.

The invention provides a sintered body and a light-emitting device. The sintered body contains at least one phosphor selected from the group consisting of nitride phosphors having a composition represented by formula (I) and alpha-sialon phosphors having a composition represented by formula (II), and in a chromaticity diagram of the CIE1931 color system, a region A1 is defined by a line connecting a 1a-th point (x = 0.549, y = 0.425), a 2a-th point (x = 0.562, y = 0.438), a 3a-th point (x = 0.589, y = 0.411), and a 4a-th point (x = 0.576, y = 0.407). The sintered body emits light having a hue within the region A1 when irradiated with excitation light, and the light emitted when irradiated with excitation light includes light obtained by wavelength conversion of excitation light by a phosphor included in the sintered body and excitation light that has passed through the sintered body. The ratio (Z2 / Z1) of the integral value of a second integral value (Z2) of 400-500 nm inclusive to a first integral value (Z1) of more than 500 nm and 800 nm or less in the emission spectrum of light emitted from the sintered body is 0.005 or more.

Provided is a nitride phosphor with which it is possible to obtain a higher luminous flux when constituting a light-emitting device. The nitride phosphor contains, in a composition, at least one group 2 element selected from the group consisting of Mg, Ca, Sr and Ba, Eu, Si, Al and N. The molar content of the Al in the composition is less than or equal to the molar content of the Sr in the composition, and the molar content of the N in the composition is less than or equal to the molar content of the Eu. The ratio of the total molar content of the group 2 element to the total molar content of Eu is 0.8 to 1.1, the ratio of the molar content of Eu is 0.002 to 0.08, the ratio of the molar content of Si is 0.8 to 1.2, and the ratio of the total molar content of Si and Al is 1.8 to 2.2. The nitride phosphor has an average aspect ratio, which is the ratio of the minor axis to the major axis, of from 0.72 to 0.77 (inclusive), and an average circularity of from 0.82 to 0.92 (inclusive).

The present invention relates to the technical field of rare earth luminescent materials and provides a red nitride phosphor, and a preparation method therefor and a use thereof. The chemical composition of the red nitride phosphor of the present invention is Sr2[Mg1-xLixAl5-xSixN7]:yEu2+, wherein 0.001≤x≤0.50 and 0.0005≤y≤0.20. The phosphor is based on a nitride system, exhibits strong light absorption of blue light at 400-500 nm, has an excitation peak value of about 460 nm, can be effectively excited by blue laser light, can emit red fluorescence under blue light excitation, has an emission peak value adjustable in the range of 635 nm to 685 nm and a full width at half maximum adjustable in the range of 75 nm to 90 nm, and greatly contributes to high color gamut in display devices. The phosphor, when used in various laser display devices using blue light high-power lasers as excitation sources, has the advantages of strong luminous brightness, high luminous efficiency, and stable physical and chemical properties.

To provide a sintered body and a light-emitting device.SOLUTION: A sintered body contains at least one phosphor selected from the group consisting of a nitride phosphor having the composition of a formula (I) and a α sialon phosphor having the composition of a formula (II). When excitation light is radiated, light which has color tone in a region A1 defined by a line connecting a point 1a (x=0.549, y=0.425), a point 2a (x=0.562, y=0.438), a point 3a (x=0.589, y=0.411) and a point 4a (x=0.576, y=0.407) in a chromaticity diagram of a CIE1931 color system, and in which an integral value ratio Z2 / Z1 between a first integral value Z1 exceeding 500 nm and 800 nm or less and a second integral value Z2 of 400 nm or more 500 nm or less is 0.005 or more in an emission spectrum of light emitted from a sintered body including light in which excitation light is wavelength-converted by a phosphor contained in a sintered body when excitation light is radiated and excitation light which passed through the sintered body is emitted.SELECTED DRAWING: Figure 10

The present invention belongs to the field of semiconductor device technology and relates to a method and application for suppressing the persistent photoconductive effect of gallium oxide. The method comprises: providing a crystalline gallium oxide material and preheating the crystalline gallium oxide material; the preheating temperature is not lower than the melting point of metallic gallium; spreading liquid gallium in air, forming an amorphous gallium oxide film layer on the surface of the spread liquid gallium; while maintaining the liquid gallium in a liquid state, contacting the preheated crystalline gallium oxide material surface with the amorphous gallium oxide film layer on the surface of the liquid gallium, thereby transferring the amorphous gallium oxide film layer to the surface of the crystalline gallium oxide material; and nitriding, phosphatizing, or sulfiding the amorphous gallium oxide film layer on the surface of the crystalline gallium oxide material, thereby converting the amorphous gallium oxide film layer into a gallium nitride film layer, a gallium phosphate film layer, or a gallium sulfide film layer. The method provided by the present invention not only improves material performance but also significantly increases the response speed of the photodetector device.

The present application relates to a test device and method for the aging degree of nitride phosphors, belonging to the technical field of preventing the contamination of optical device components. The test device for the aging degree of nitride phosphors includes a spherical shell, a light inlet and a light outlet, and the light inlet and the light outlet are respectively arranged on the spherical shell; a flap is connected to the light outlet; a plurality of grids are evenly distributed on the flap; a photoelectric element is arranged in the grid, and the photoelectric element is used to detect the change in light flux. A cleaning box is fixedly arranged on the top of the spherical shell; a support pipe is fixedly arranged on the top of the cleaning box; a support rod is slidably arranged vertically in the support pipe; a lead screw is fixedly connected to the bottom end of the support rod; a connecting pipe is rotatably arranged at the bottom end of the lead screw; a nozzle is fixedly connected to the bottom end of the connecting pipe; a transmission wheel is rotatably arranged at the bottom end of the support pipe and is in threaded cooperation with the lead screw. The present application has the effect of automatically positioning the pollution position inside the integrating sphere.

The invention discloses small-particle-size spherical green nitride fluorescent powder applied to a Mini LED backlight source and a preparation method of the small-particle-size spherical green nitride fluorescent powder, and relates to the field of fluorescent materials. The preparation method comprises the following steps: mixing Sr3N2, EuN, Li3N and Si3N4 in ammonia gas, sintering, grinding, carrying out oxidation heat treatment, carrying out acid etching, filtering, drying, repeatedly washing, and drying to obtain the Sr1-xEuxLiSi3N5 fluorescent powder, wherein x is more than or equal to 0.01 and less than or equal to 0.07. The small-particle-size spherical green nitride fluorescent powder is characterized in that a SiO2 layer is formed on the surface of a particle by adopting high-temperature oxidation, and acid pickling etching, washing and the like are combined, so that the SiO2 layer is eliminated, and the small-particle-size spherical green nitride fluorescent powder which is spherical in particle shape, has the D50 median particle size of 0.5-1 micron, has the quantum efficiency of 40-60% under the excitation of 450 nm blue light, has the emission spectrum main peak of 510-530 nm and is applied to a MiniLED backlight source is obtained.

The invention belongs to the technical field of semiconductor devices, and relates to a method for inhibiting the continuous photoconductive effect of gallium oxide and application. The method comprises the following steps: providing a crystal gallium oxide material, and preheating the crystal gallium oxide material; the preheating temperature is not lower than the melting point of metal gallium; the method comprises the following steps: spreading liquid gallium oxide under an air condition, and forming an amorphous gallium oxide film layer on the surface of the spread liquid gallium oxide; enabling the surface of the preheated crystal gallium oxide material to be in contact with the amorphous gallium oxide film layer on the surface of the liquid gallium oxide under the condition that the liquid gallium oxide is kept in a liquid state, and enabling the amorphous gallium oxide film layer to be transferred to the surface of the crystal gallium oxide material; and nitriding, phosphorylating or vulcanizing the amorphous gallium oxide film layer on the surface of the crystal gallium oxide material, so that the amorphous gallium oxide film layer is converted into a gallium nitride film layer, a gallium phosphate film layer or a gallium sulfide film layer. According to the method provided by the invention, the response speed of a photoelectric detector is greatly improved while the material performance is improved.

The invention provides a light generating system (1000) comprising a first solid state light source (10) and a luminescent converter (2000), wherein: (A) the first solid state light source (10) is configured to generate first light source light (11) having a first peak wavelength (λp1) selected from the range of 380-490 nm; (B) the luminescent converter (2000) is configured in a light receiving relationship with the first solid state light source (10); wherein the luminescent converter (2000) comprises a first luminescent material (210), a second luminescent material (220), and a third luminescent material (230); (C) the first luminescent material (210) comprises a luminescent material of the type M'xM2-2xAX6:Mn4+, wherein M' comprises an alkaline earth cation, M comprises a monovalent cation, and x is in the range of 0-1, wherein A comprises a tetravalent cation, comprising one or more of silicon, titanium, and germanium, wherein X comprises a monovalent anion, at least comprising fluorine; wherein the first luminescent material (210) is configured to convert at least part of the first light source light (11) received by the first luminescent material (210) into first luminescent material light (211); (D) the second luminescent material (220) comprises one or more of a divalent europium comprising nitride luminescent material, a divalent europium comprising oxynitride luminescent material, and a luminescent material of the type M1−xLi3−2y(Al1-bGab)1+2y−zSizO4−4y−zN4y+z:Eux, wherein M comprises one or more of Mg, Ba, Sr, and Ca; wherein the second luminescent material (220) is configured to convert at least part of the first light source light (11) received by the second luminescent material (220) into second luminescent material light (221); (E) the third luminescent material (230) is configured to convert at least part of the first light source light (11) received by the third luminescent material (230) into third luminescent material light (231); wherein the third luminescent material light (231) has a third centroid wavelength (λc3) selected from the range of 500-560 nm; wherein the third luminescent material light (231) comprises at least one emission band having a third full width at half maximum FWHM3 selected from the range of 20-80 nm; and (F) the light generating system (1000) is configured to generate system light (1001), wherein the system light (1001) comprises the first luminescent material light (211), the second luminescent material light (221), and the third luminescent material light (231); wherein the system light (1001) is white light having a correlated color temperature of 2000-4000 K and a color point with a distance to the black body locus of Duv ≤ -0.01.

The present invention provides a nitride phosphor that can obtain a higher luminous flux when used in a light-emitting device. [Solution] A nitride phosphor whose composition includes at least one group 2 element selected from the group consisting of Mg, Ca, Sr, and Ba, Eu, Si, Al, and N, wherein the ratio of the total molar content of the group 2 elements and Eu to the molar content of Al in the composition is 0.8 or more and 1.1 or less, the ratio of the molar content of Eu is 0.002 or more and 0.08 or less, the ratio of the molar content of Si is 0.8 or more and 1.2 or less, and the ratio of the total molar content of Si and Al is 1.8 or more and 2.2 or less. The nitride phosphor has an average aspect ratio, which is the ratio of the minor axis to the major axis, of 0.72 or more and an average circularity of 0.82 or more and 0.92 or less.

Provided are a nitride phosphor, a light-emitting device, and a method for producing the nitride phosphor.　This nitride phosphor has a composition represented by formula (1).　(1): M1 sM2 tM3 x(Al1-uM4 u)vNwR5 y (In formula (1), M1 is at least one element selected from the group consisting of Sr, Ca, Ba, and K; M2 is at least one element selected from the group consisting of Li, Na, and Mg; M3 is at least one element selected from the group consisting of Eu, Mn, Ce, and Tb; M4 is at least one element selected from the group consisting of Ga, In, and B; R5 is at least one element selected from the group consisting of F, Cl, Br, and I; and s, t, u, v, w, x, and y respectively satisfy 0.7 ≤ s ≤ 1.3, 0.7 ≤ t ≤ 1.45, 0 < u ≤ 0.38, 2.4 ≤ v ≤ 3.7, 3.0 ≤ w ≤ 5.0, 0 < x ≤ 0.2, and 0.2 < y ≤ 0.8.　

Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN3; and performing a heat treatment of the mixture at a temperature of 1,300° C. to 1,900° C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.

Provided is a phosphor having superior light-emitting properties. A phosphor composition includes: a nitride phosphor that contains, in a composition thereof, an element M that is at least one selected from the group consisting of rare earth elements except cerium, silicon, nitrogen, and cerium; and an oxyfluoride. In the phosphor composition, a content of the oxyfluoride relative to the phosphor composition is 1.5% by mass or higher and 10% by mass or lower according to an X-ray diffraction reference intensity ratio method.

Provided is a nitride phosphor with high emission intensity. The nitride phosphor includes: a group 1 element(s) including at least one selected from the group consisting of lithium, sodium, and potassium; a group 2 element(s) including at least one selected from the group consisting of magnesium, calcium, strontium, and barium; a group 13 element(s) including at least one selected from the group consisting of aluminum, gallium, and indium; a group 14 element(s) including at least one selected from the group consisting of silicon, germanium, and tin; nitrogen; and cerium. The nitride phosphor includes, as a host crystal, a crystal having the same crystal structure as CaAlSiN3, wherein the internal quantum efficiency upon excitation at 450 nm is not less than 87%.

To provide a production method of a nitride phosphor capable of showing high light emission intensity.SOLUTION: A production method of a nitride phosphor includes: obtaining a first heat-treated object having a crystallite diameter of 150 nm or more by heat-treating a compound containing at least one kind of rare earth element selected from the group consisting of Y, La, Ce, Lu and Gd at a temperature in a range of 800°C or more and 1,800°C or less; and obtaining a second heat-treated object by heat-treating at a temperature in a range of 1,200°C or more and 1,800°C or less, a mixture containing the first heat-treated object, and if necessary as the raw materials, an M source containing at least one kind of rare earth element M selected from the group consisting of Y, Lu and Gd, and an La source, an Si source and a Ce source, and adjusted so that a preparation composition of the raw materials is represented by composition formula LawMxSi6 Ny:Cez. In the composition formula, w, x, y and z satisfy 0.5≤w≤4.5, 0<x≤1.5, 0≤y≤12, 0<z≤1.5, 0.15<(x+z)<3.0, 3.0≤(w+x+z)≤7.5.SELECTED DRAWING: Figure 3

To provide a method of producing a ceramic sintered body.SOLUTION: The method of producing a ceramic sintered body includes: preparing a molded body including a nitride phosphor having a composition including at least one species of alkali earth metal elements M1, and at least one species of metal elements M2 selected from the group consisting of Eu, Ce, Tb and Mn, and Si and N, with the mol ratio of the sum of alkali earth metal elements M1 and metal elements M2 in 1 mol of the composition being 2, the mol ratio of metal elements M2 being a product of a variable y and 2, the variable y being 0.001 or more and smaller than 0.5, the mol ratio of Si being 5, and the mol ratio of N being 8; subjecting the molded body to primary firing to obtain a first sintered body; subjecting the first sintered body to secondary firing while making the first sintered body contact with metallic molybdenum or a solid consisting of an alloy including molybdenum as a main component, to obtain a second sintered body; and subjecting the second sintered body stored in a container including metal with a higher melting point than metallic molybdenum to tertiary firing to obtain a third sintered body.SELECTED DRAWING: Figure 1

To provide a phosphor ceramic which emits light when excited by excitation light, and a method for producing a light-emitting device.SOLUTION: A method for producing a phosphor ceramic includes preparing a precursor that is either a molded body containing aluminum nitride or a sintered body containing aluminum nitride, and bringing the precursor into contact with a gas containing europium to obtain an aluminum nitride phosphor ceramic having a europium content in a range of more than 0.03% by mass and 1.5% by mass or less.SELECTED DRAWING: Figure 1

A nitride phosphor, having a composition that contains Eu, Si, Al, N, and a Group 2 element containing at least one selected from the group consisting of Mg, Ca, Sr, and Ba. With respect to a molar content of Al in the composition, a ratio of a total molar content of the Group 2 element and Eu is in a range of 0.8 to 1.1, a ratio of a molar content of Eu is in a range of 0.002 to 0.08, a ratio of a molar content of Si is in a range of 0.8 to 1.2, and a ratio of a total molar content of Si and Al is in a range of 1.8 to 2.2. The nitride phosphor has an average value of an aspect ratio, which is a minor-axis-to-major-axis ratio, in a range of 0.72 to 0.77, and an average circularity in a range of 0.82 to 0.92.

The present invention provides a wavelength conversion member having little decrease in luminous intensity over time when irradiated with light from an LED or LD, and a light emitting device using the same. The wavelength conversion component is characterized in that it is a wavelength conversion component in which an inorganic phosphor is dispersed in a glass matrix, and the glass matrix contains, in mole %, 30 to 85% SiO2, 0 to 20% B2O3, 0 to 25% Al2O3, 0 to 3% Li2O, 0 to 3% Na2O, 0 to 3% K2O, 0 to 3% Li2O+Na2O+K2O, 0 to 35% MgO, 0 to 35% CaO, 0 to 35% SrO, 0 to 35% BaO, 0.1 to 45% MgO+CaO+SrO+BaO, and 0 to 4% ZnO, and the inorganic phosphor is at least one selected from oxide phosphors, nitride phosphors, oxynitride phosphors, chloride phosphors, acyl chloride phosphors, halide phosphors, aluminate phosphors and halophosphate phosphors.

To provide a nitride phosphor and a light-emitting device having excellent temperature characteristics.SOLUTION: A nitride phosphor having a composition contained in composition formulas represented by the formula (1) below, has an emission peak wavelength within a range of 585 nm or more and 610 nm or less in an emission spectrum when light having an emission peak wavelength within a range of 350 nm or more and 500 nm or less is irradiated, and with an emission intensity when the irradiated exciting light is shut-off as a reference intensity, an afterglow time when the emission intensity becomes 1 / 10 of the reference intensity is 2.49 μs or more. (BavSrwEux)2Si5 N8-y (1) (wherein, v, w, x, and y each satisfy 0.50≤v≤0.919, 0.08≤w≤0.50, 0.001≤x≤0.030, 0.9<v+w+x≤1.0, 0≤y≤0.5.)SELECTED DRAWING: Figure 3