5results about How to "Good temperature characteristics" patented technology

The application discloses a band gap reference circuit, a band gap reference generation method and a chip. The band gap reference circuit comprises a first resistor, a first PNP transistor and a second PNP transistor, a first current mirror unit, a first transistor, a second current mirror unit and a reference voltage generation unit. The first current mirror unit outputs a first current and a second current; the first transistor is used for generating a third current; the second current mirror unit proportionally copies the third current to generate a fourth current and a fifth current; and the reference voltage generation unit is used for generating a zero-temperature-coefficient reference voltage. According to the band gap reference circuit, the band gap reference generation method and the chip, NPN transistors are not used, so that a smaller number of masks and a smaller area are required, the application in a large-scale integrated circuit is more favorable, good temperature characteristics are simultaneously achieved, a stable reference voltage is maintained at high temperature, and the application in a high-temperature or high-power module in a system basic chip is suitable.

The application discloses a low dropout linear regulator circuit which is mutually started with a bandgap reference circuit, and comprises a pre-starting circuit, an operational amplifier, a first NMOS transistor, and a bandgap reference circuit; the same-phase input end of the operational amplifier is connected with the output end of the pre-starting circuit; the gate of the first NMOS transistor is connected with the output end of the operational amplifier, and the source thereof is communicated with the input end of the bandgap reference circuit, so that an initial output voltage is generated to pre-start the bandgap reference circuit; the output end of the bandgap reference circuit is communicated with the pre-starting circuit, and after pre-starting, the LDO circuit is restarted to obtain a final output voltage, and the mutual starting of the LDO circuit and the bandgap reference circuit is realized. The application solves the problems that the traditional LDO circuit cannot provide stable bias current by itself, and the load capacity and transient response performance of the traditional bandgap reference type LDO circuit are poor, adopts a special mutual starting mechanism, simplifies the pre-starting and shutdown mechanism, improves the load capacity and transient response performance of the LDO circuit, guarantees the stable output voltage, and ensures the normal work of other modules of the system.

This disclosure provides a multilayer ceramic capacitor and a method for manufacturing the same. The multilayer ceramic capacitor includes: a capacitor body comprising a dielectric layer and an inner electrode layer; and an outer electrode disposed on the outer surface of the capacitor body. The dielectric layer comprises a plurality of dielectric grains, at least one of which has a core-shell structure. The core-shell structure includes a core and a shell surrounding at least a portion of the core. The core comprises barium (Ba) and titanium (Ti), and the shell comprises zirconium (Zr) and calcium (Ca) and / or strontium (Sr).

This application provides a battery screening method, system, electronic device, and computer-readable storage medium, relating to the field of battery screening. The battery screening method includes: after placing a fully charged target battery in a static state for a first preset time period, measuring a first electrical parameter of the target battery; after the target battery's temperature drops to a target temperature and is placed in a static state for a second preset time period, measuring a second electrical parameter of the target battery; after discharging the target battery to a preset charge at a target temperature, measuring a third electrical parameter of the target battery after discharging to the preset charge; after discharging the target battery to the preset charge at the target temperature and restoring it to the temperature at which the first electrical parameter was measured, measuring a fourth parameter of the target battery; and determining whether the target battery meets the qualification requirements based on the electrical parameters. Using this battery screening method, battery consistency can be accurately and efficiently determined, and battery quality can be effectively checked and differentiated.

This elastic wave device is provided with: a support substrate; a medium layer formed on the support substrate; the piezoelectric substrate is formed on the medium layer; a resonator including an IDT electrode, the IDT electrode being formed on the piezoelectric substrate; the medium layer is provided with a stripe-shaped first acoustic impedance region with a length direction and a width direction; and a second acoustic impedance region having a stripe shape, having a length direction and a width direction, provided alternately with the first acoustic impedance region, and having an acoustic impedance different from that of the first acoustic impedance region; the first acoustic impedance area and the second acoustic impedance area are respectively provided with a wide area and a narrow area in the width direction; in a planar view, in a region overlapping the resonator, the first acoustic impedance region and the second acoustic impedance region each have a plurality of wide regions and a plurality of narrow regions formed so as to be repeated in the longitudinal direction. Provided is an elastic wave device having excellent temperature characteristics.