856results about How to "Good temperature characteristics" patented technology

A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

In a gate driving circuit and a display apparatus having the gate driving circuit, a pull-up transistor of a present stage among plural stages, which are connected one after another to each other and sequentially output a gate signal, pulls up a present gate signal output through an output terminal to a gate-on voltage. A buffer transistor is connected to a control terminal of the pull-up transistor to receive a previous output signal from a previous stage and to turn on the pull-up transistor. The buffer transistor has a chargeability that is about two times or greater than the chargeability of the pull-up transistor. Thus, the size of the pull-up transistor may be reduced, thereby preventing a malfunction of the gate driving circuit when the gate driving circuit is operated under conditions of high temperature or low temperature.

An object of the present invention is to provide a light emitting device which satisfies both properties of excellent color rendering properties for color reproduction and good light emitting efficacy, both of which are in the mutual trade-off relationship, by using a blue semiconductor laser which emits blue wavelength light with good light emitting efficiency and which has a linear spectrum in the blue wavelength band. A light emitting device is comprised of at least a first unit and at least a second unit. The first unit is comprised of a first excitation light source comprising a laser element emitting blue wavelength band excitation light, a wavelength converting member comprising at least one type of fluorescent material and which absorbs at least a portion of an excitation light emitted from the first excitation light source, converts the wavelength, and releases light with a wavelength longer than the first excitation light, and a light guide which has a refractive index in the center region of the cross-section which is higher than the refractive index of the surrounding region and which transmits the excitation light emitted from the first excitation light source. The second unit is comprised of a second excitation light source comprising a laser element which emits excitation light with a wavelength band shorter than the blue wavelength band excitation light emitted by the laser element, a wavelength converting member, and a light guide.

A multi-band transceiver has a function of sharing transmitted and received signals of multiple frequency bands by the same antenna. The multi-band transceiver mounts multiple filters that correspond to the multiple frequency bands and multiple amplifiers for amplifying the transmitted signals on the same substrate, and arranges the multiple filters in close vicinity to the amplifier in the order where the multiple filters are excellent in their temperature characteristic.

A piezoelectric resonator element includes: a base in a predetermined length, the base being made of a piezoelectric material; a plurality of resonating arms extending from a first end of the base; a joining part connected to a second end apart from the first end of the base by a predetermined distance; a connecting part connected to the joining part and extending in a width direction of the piezoelectric resonator element; a supporting arm connected to the connecting part and extending in a same direction as the resonating arm at an outer side of the plurality of resonating arms. A ratio L3/h is 40% or less where h is a length dimension from the first end of the base to the second end opposite to the resonating arms of the piezoelectric resonator element, and L3 is a width dimension of the connecting part connecting the supporting arm to the base through the joining part.

A dielectric ceramic includes a compound represented by the general formula: (Ba_1-tCa_t)_m(Ti_1-u-xZr_uCu_x)O₃ (where 0.96≦m≦1.02, 0.001≦x≦0.03, 0≦t≦0.1, and 0≦u≦0.06) as a primary component, a rare earth element Re such as Dy, a metal element M such as Mn, Mg, and Si. In the dielectric ceramic, the Cu is uniformly and dispersedly present in the primary phase grain forming the primary component, and the contents of the accessory components with respect to 100 molar parts of the primary component are 0.1 to 1.5 molar parts of Re, 0.1 to 0.6 molar parts of M, 0.1 to 1.5 molar parts of Mg and 0.1 to 2.0 molar parts of Si. Accordingly, a multilayer ceramic capacitor can be realized which has a high dielectric constant, superior temperature properties, and a high reliability, and also has a small change in electrostatic capacitance with time.

Disclosed are an electric energy storage device having a good cycle characteristic and a temperature characteristic and a method of charging and discharging the electric energy storage device. The electric energy storage device including a capacitor and a secondary battery combined in series is provided. When the capacitor of the electric energy storage device is an electric double layer capacitor, the capacitor is used to the voltage of OV or less to increase an available energy usage. When this energy storage device is used as a power in a place where a rapid keeping and repairing is difficult such as out in the fields including in the mountain, at the sea, on the road, the cost for keeping and repairing can be largely reduced.

To provide an alkaline-earth metal halogen phosphor that has high luminescent characteristics even when used with an excitation light source that emits light of the near-ultraviolet region, a phosphor-containing composition and a light emitting device using the phosphor, and a display and an illuminating device using the light emitting device,

the phosphor of the present invention has a chemical composition represented by the formula (1) below and an external quantum efficiency, when excited with light of 400-nm wavelength, of 77% or higher.

(Sr_10-x-y-zM_xEu_yMn_z)(PO₄)₆(Cl_1-aQ_a)₂  (1)

(In the above formula (1), “M” represents at least one kind of element selected from the group consisting of Ba, Ca, Mg, and Zn, “Q” represents at least one kind of element selected from the group consisting of F, Br, and I, and each of “x”, “y”, “z”, and “a” represents a number satisfying the following requirements: 0≦x<10, 0.3≦y≦1.5, 0≦z≦3, 0≦a≦1, and x+y+z≦10.)

Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.

The humidity sensor includes a substrate, an open cavity with an open upper portion formed to have a depth and a width in the substrate, a plurality of electrode pads formed on the substrate, a heater connected to one pad of the electrode pads at one end, and connected to another pad of the electrode pads at the other end to be suspended over the open cavity, a plurality of sensing electrodes formed on the same plane as the heater, and suspended over the open cavity to output a sensed signal to the electrode pads, a humidity sensitive layer formed on the heater and the sensing electrodes, suspended over the open cavity, and changed in characteristic according to the humidity, and an ambient temperature measurement part configured to measure the temperature around the humidity sensor, wherein the temperature is used as a reference temperature to control a heating temperature of the heater.

An improved truck racing tire includes three belts and reduced tread and undertread thickness for weight reduction. An asymmetric shoulder design is provided and circumferential grooves having wear indicia therein at a preselected depth are incorporated into the tread to divide the tread into plural ribs. Notches are formed within the tread ribs in circumferential patterns of distribution at a depth equivalent to the depth of groove tread wear indicators. The tread is constructed of a relatively softer compound in the cap and a relatively harder compound in the base. The boundary between the cap and the base is at a depth corresponding to the notch depth and the wear indicators within the grooves to provide a further indication and confirmation of wear pattern and magnitude.

The present invention provides an oxide magnetic material, which includes a primary phase of a hexagonal ferrite containing metallic elements Ca, R, Fe and M, where M represents at least one element selected from the group including Co, Ni and Zn, and R represents at least one element selected from the group including Bi and rare earth elements including Y, with La being essentially included in R; wherein the proportions of the metallic elements Ca, R, Fe and M with respect to the total amount of the metallic elements are from 1 to 13 atomic % for Ca, from 0.05 to 10 atomic % for R, from 80 to 95 atomic % for Fe, and from 1 to 7 atomic % for M. The present invention also provides ferrite particles, a bonded magnet, a sintered magnet, a process for producing them, and a magnetic recording medium, which contain the oxide magnetic material.

A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate and which is expressed by a formula: (Bi2O2)<2+>(Am-1BmO3m+1)<2->, or Bi2Am-1BmO3m+3 wherein "m" is an even number, "A" is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and "B" is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. The temperature characteristics of the dielectric constant are excellent. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the break-down voltage is improved and the surface smoothness is excellent.

The invention discloses a broad temperature low standby power consumption FPT type soft magnetic ferrite and a preparation method thereof. The composition calculated by content of oxides is as follows: 52-55mol% of Fe2O3, 7-10mol% of ZnO and the balance of MnO; a first auxiliary component comprises 0.01wt%-0.1wt% of CaO and 0.005wt%-0.02wt% of SiO2; a second auxiliary component comprises one or more of V2O5, Nb2O5, Ta2O5, ZrO2 and K2O, the content is 0-0.2wt% by calculation, and a third auxiliary component comprises 0.05-1wt% of TiO2 and 0.05-1wt% of Co2O3. Pre-burning under the protection of nitrogen, sintering, the control of cooling atmosphere and the densification process are carried out, thereby leading the power consumption PCV of a magnetic core at 100kHz and 200mT within the temperature of 25 DEG C-120 DEG C to be respectively less than 400kw/m<3> and 350kw/m<3>, and a time stability indicator thereof which is a disaccommodation factor Df is less than 2*10<-6>.

A dynamic quantity sensor includes a force receiving portion, a first movable portion that rotates in a first rotational direction around a first rotational axis according to dynamic quantity in a first direction that the force receiving portion receives, and rotates in the first rotational direction around the first rotational axis according to dynamic quantity in a second direction different from the first direction that the force receiving portion receives; and a second movable portion that rotates in a second rotational direction around a second rotational axis according to the dynamic quantity in the first direction that the force receiving portion receives, and rotates in an opposite direction to the second rotational direction around the second rotational axis according to the dynamic quantity in the second direction that the force receiving portion receives.

A surface-emission laser diode includes an active layer, a pair of cavity spacer layers formed at both sides of the active layer, a current confinement structure defining a current injection region into the active layer, and a pair of distributed Bragg reflectors opposing with each other across a structure formed of the active layer and the cavity spacer layers, the current confinement structure being formed by a selective oxidation process of a semiconductor layer, the pair of distributed Bragg reflectors being formed of semiconductor materials, wherein there is provided a region containing an oxide of Al and having a relatively low refractive index as compared with a surrounding region in any of the semiconductor distributed Bragg reflector or the cavity spacer layer in correspondence to a part spatially overlapping with the current injection region in a laser cavity direction.

A multilayer ceramic capacitor having internal electrode layers and dielectric layers, wherein a thickness of said dielectric layer is 2.0 μm or less, and an average particle number per one dielectric layer obtained by dividing the thickness of said dielectric layer by an average particle diameter of dielectric particles composing said dielectric layer is 3 or more and 6 or less.