14results about How to "Good temperature characteristics" patented technology

The invention relates to the technical field of ceramic materials, in particular to a high-temperature impedance X7R dielectric ceramic material and a preparation method and application thereof.The high-temperature impedance X7R dielectric ceramic material is prepared from main powder, a doping agent, a dispersing agent and a binding agent, the main powder is prepared from BaTiO3 and Na0. 5Bi0. 5TiO3 according to the molar ratio of 9: 1 through ball milling and presintering, the presintering temperature ranges from 1200 DEG C to 1400 DEG C, and the presintering time ranges from 2 h to 4 h; the doping agent is obtained by pre-sintering Nb2O5, transition metal oxide MeO and MgCO3, the pre-sintering temperature is 650 to 750 DEG C, and the pre-sintering time is 1 to 2 hours; the main powder is 100 parts by mole, the Nb2O5 is 0.1 to 1.0 part by mole, the MgCO3 is 0.1 to 1.0 part by mole, and the transition metal oxide MeO is 0.1 to 3.0 parts by mole. The temperature characteristic of the dielectric ceramic is improved, and the temperature stability of the dielectric ceramic meets the X7R dielectric material standard formulated by the American Electronic Industry Association.

The invention relates to a cantilever beam type capacitance MEMS acceleration sensor. The cantilever beam type capacitance MEMS acceleration sensor comprises an upper wafer layer, a middle wafer layer and a lower wafer layer which are arranged in sequence, the middle wafer layer is used for forming a movable mass block, a fixed electrode and an anchor point; the number of the anchor point is one, the anchor point is located at the first end of the movable mass block, and the anchor point is connected with the first end of the movable mass block through an elastic beam; a differential capacitor group is formed between the movable mass block and the fixed electrode along one or more directions, so that the acceleration in one or more directions can be measured; the upper wafer layer and the lower wafer layer are respectively connected with the middle wafer layer from two sides, and the fixed electrode and the anchor point are connected with the upper wafer layer and / or the lower wafer layer. According to the invention, the requirement of multi-axis detection is met, and the area utilization rate and the working reliability of the movable mass block are improved at the same time.

The present invention relates to a magnetic sensor and a current sensor, the magnetic sensor (30) having: an excitation coil (45) formed from a flexible substrate; and a field core (44) which extends in the axial direction of the field coil (45) and around which the field coil (45) is wound. When the flexible substrate deforms, the excitation core (44) is disposed in the flexible substrate such that at least a portion of the excitation core (44) can move in the tape length direction of the excitation core (44) with respect to the flexible substrate.

The invention relates to an overflow valve, a negative control overflow valve and a control valve. A negative control relief valve (10) according to an embodiment is provided with: a housing (2); and a relief valve body (20) which is attached to the housing (2) and through which hydraulic oil passes. The relief valve main body (20) has at least a first throttle section (43) and a second throttle section (55) that apply resistance to hydraulic oil passing through the relief valve main body (20).

The invention discloses a high-frequency wide-temperature low-power-consumption soft magnetic manganese-zinc ferrite material and a preparation method, and belongs to the technical field of manganese-zinc ferrites.The soft magnetic manganese-zinc ferrite material comprises main materials and auxiliary materials, the main materials comprise, by mole, 53-55 mol% of Fe2O3, 9-10 mol% of ZnO and the balance MnO; the auxiliary materials comprise the following raw materials in parts by million: 3500 to 5000 ppm of Co3O4, 500 to 2000 ppm of SnO2, 300 to 800 ppm of CaCO3, 20 to 100 ppm of SiO2, 500 to 2000 ppm of TiO2 and 200 to 500 ppm of Nb2O5. According to the invention, the problem of high power consumption at 25 DEG C to 140 DEG C under 300KHz and 100mT in the prior art is solved. The invention has excellent loss characteristics and temperature characteristics.

The application discloses a band gap reference circuit, a band gap reference generation method and a chip. The band gap reference circuit comprises a first resistor, a first PNP transistor and a second PNP transistor, a first current mirror unit, a first transistor, a second current mirror unit and a reference voltage generation unit. The first current mirror unit outputs a first current and a second current; the first transistor is used for generating a third current; the second current mirror unit proportionally copies the third current to generate a fourth current and a fifth current; and the reference voltage generation unit is used for generating a zero-temperature-coefficient reference voltage. According to the band gap reference circuit, the band gap reference generation method and the chip, NPN transistors are not used, so that a smaller number of masks and a smaller area are required, the application in a large-scale integrated circuit is more favorable, good temperature characteristics are simultaneously achieved, a stable reference voltage is maintained at high temperature, and the application in a high-temperature or high-power module in a system basic chip is suitable.

The application discloses a low dropout linear regulator circuit which is mutually started with a bandgap reference circuit, and comprises a pre-starting circuit, an operational amplifier, a first NMOS transistor, and a bandgap reference circuit; the same-phase input end of the operational amplifier is connected with the output end of the pre-starting circuit; the gate of the first NMOS transistor is connected with the output end of the operational amplifier, and the source thereof is communicated with the input end of the bandgap reference circuit, so that an initial output voltage is generated to pre-start the bandgap reference circuit; the output end of the bandgap reference circuit is communicated with the pre-starting circuit, and after pre-starting, the LDO circuit is restarted to obtain a final output voltage, and the mutual starting of the LDO circuit and the bandgap reference circuit is realized. The application solves the problems that the traditional LDO circuit cannot provide stable bias current by itself, and the load capacity and transient response performance of the traditional bandgap reference type LDO circuit are poor, adopts a special mutual starting mechanism, simplifies the pre-starting and shutdown mechanism, improves the load capacity and transient response performance of the LDO circuit, guarantees the stable output voltage, and ensures the normal work of other modules of the system.

This disclosure provides a multilayer ceramic capacitor and a method for manufacturing the same. The multilayer ceramic capacitor includes: a capacitor body comprising a dielectric layer and an inner electrode layer; and an outer electrode disposed on the outer surface of the capacitor body. The dielectric layer comprises a plurality of dielectric grains, at least one of which has a core-shell structure. The core-shell structure includes a core and a shell surrounding at least a portion of the core. The core comprises barium (Ba) and titanium (Ti), and the shell comprises zirconium (Zr) and calcium (Ca) and / or strontium (Sr).

The invention relates to a resonant inductor integrated transformer module, the resonant inductor integrated transformer module according to the invention comprising: a transformer (10); and resonant inductors (210, 310) which are spiral coils, are formed on one side of the transformer (10), are connected to the coils (110, 120) constituting the transformer (10), and play a role in the capacitance and resonance of the transformer (10) itself.

This application provides a battery screening method, system, electronic device, and computer-readable storage medium, relating to the field of battery screening. The battery screening method includes: after placing a fully charged target battery in a static state for a first preset time period, measuring a first electrical parameter of the target battery; after the target battery's temperature drops to a target temperature and is placed in a static state for a second preset time period, measuring a second electrical parameter of the target battery; after discharging the target battery to a preset charge at a target temperature, measuring a third electrical parameter of the target battery after discharging to the preset charge; after discharging the target battery to the preset charge at the target temperature and restoring it to the temperature at which the first electrical parameter was measured, measuring a fourth parameter of the target battery; and determining whether the target battery meets the qualification requirements based on the electrical parameters. Using this battery screening method, battery consistency can be accurately and efficiently determined, and battery quality can be effectively checked and differentiated.

The present invention proposes a method for manufacturing a piezoelectric oxide single crystal substrate, including: preparing lithium-rich polycrystalline powder, mixing lithium carbonate and metal oxide, performing high-temperature solid-phase reaction, and then crushing to prepare lithium-rich polycrystalline powder, wherein the metal element in the metal oxide is the same as the metal element in the piezoelectric oxide single crystal substrate, the lithium in the lithium-rich polycrystalline powder and the metal have a first stoichiometric ratio, and the lithium in the piezoelectric oxide single crystal substrate and the metal have a second stoichiometric ratio; preparing a reduction sheet, mixing the lithium-rich polycrystalline powder and the reducing powder according to a preset ratio, and pressing the sheet to prepare a first reduction sheet and a second reduction sheet; performing a reduction treatment, placing the first reduction sheet, the piezoelectric oxide single crystal substrate, and the second reduction sheet on a bracket in sequence, and performing a high-temperature reduction treatment for a preset time to generate a piezoelectric oxide single crystal substrate with a pseudo-stoichiometric surface composition. In this way, the polarization structure of the piezoelectric oxide single crystal substrate can be maintained, and the piezoelectricity of the substrate can be improved.

The utility model relates to crystal heat preservation technical field provides a crystal heat preservation structure spare, including base, the side of base is equipped with square hole, hollow groove is equipped with on the base, the base is equipped with the tin cream welding groove on the outside of hollow groove, the base is equipped with first connecting groove on the outside of tin cream welding groove, the top of base is provided with heat preservation lid, second connecting groove is equipped with on the heat preservation lid, the surface of base and heat preservation lid all is provided with protective layer. The utility model through to the crystal increases a base and the heat preservation of lid, has improved the temperature characteristic, frequency stability, phase noise etc. of product, makes the each item of product index technology better, the surface of base and heat preservation lid is coated protective layer, the protective layer can play certain protection function to base and heat preservation lid, enhances the wear resistance, corrosion resistance, high temperature resistance and antifouling performance of base and heat preservation lid, improves its use effect.

The invention provides a large-aperture high-definition optical system and a camera module applying the same, the large-aperture high-definition optical system is mainly composed of six lenses, the object plane side of the first lens is a convex surface, the image plane side is a concave surface, and the focal power of the first lens is negative; the object plane side of the second lens is a concave surface, the image plane side is a convex surface, and the focal power is negative; the object plane side and the image plane side of the third lens are convex surfaces, and the focal power of the third lens is positive; the object plane side and the image plane side of the fourth lens are convex surfaces, and the focal power of the fourth lens is positive; the object plane side of the fifth lens is a concave surface, the image plane side of the fifth lens is a convex or concave surface, and the focal power of the fifth lens is negative; the object surface side of the sixth lens is a convex surface, the image surface side of the sixth lens is a convex or concave surface, the focal power is positive, the number of lenses is reasonable, the structure is simple, the imaging quality of the optical system is improved by reasonably distributing the focal power of the lenses and optimizing the aberration of the lens, and the characteristics of large aperture, high resolution, excellent temperature characteristic, small size and short total length are considered. The method has higher competitiveness in the field of vehicle-mounted or security and protection.

This elastic wave device is provided with: a support substrate; a medium layer formed on the support substrate; the piezoelectric substrate is formed on the medium layer; a resonator including an IDT electrode, the IDT electrode being formed on the piezoelectric substrate; the medium layer is provided with a stripe-shaped first acoustic impedance region with a length direction and a width direction; and a second acoustic impedance region having a stripe shape, having a length direction and a width direction, provided alternately with the first acoustic impedance region, and having an acoustic impedance different from that of the first acoustic impedance region; the first acoustic impedance area and the second acoustic impedance area are respectively provided with a wide area and a narrow area in the width direction; in a planar view, in a region overlapping the resonator, the first acoustic impedance region and the second acoustic impedance region each have a plurality of wide regions and a plurality of narrow regions formed so as to be repeated in the longitudinal direction. Provided is an elastic wave device having excellent temperature characteristics.