858results about "Fluid pressure measurement using ohmic-resistance variation" patented technology

A method of constructing a sensor includes depositing a first material in a predetermined arrangement to form a structure. The depositing results in at least one void occurring within the structure. The method further includes depositing a second material within the voids. The second material may have electrical properties that vary according to deformation of the second material. The method also includes providing electrical access to the second material to enable observation of the one or more electrical properties. A sensor includes a structure that has one or more voids distributed within the structure. The sensor also includes a material deposited within the one or more voids. The material may be characterized by one or more electrical properties such as piezoresistivity. The sensor includes a first contact electrically coupled to a first location on the material, and a second contact electrically coupled to a second location on the material.

The invention relates to a device for measuring pressure, temperature and/or flow velocity. It includes a sensor (6) with a sensor support body (13) provided with a diaphragm (15) covering a cavity (14) formed in the support body (13). A pressure sensitive element (41) is mounted on the diaphragm, for recording pressure. Furthermore, a temperature sensitive resistor (42) is mounted in the vicinity of the pressure sensitive resistor and has a known temperature dependence, for recording temperature. It also includes an electrical circuit (43, 44, 45, 46) selectively outputting signals from either of the pressure sensitive element and the temperature sensitive resistor.

A pressure sensor for sensing a pressure of a fluid includes a monolithic metal including substrate having a substantially planar top side, wherein the metallic comprising substrate includes s a relatively thick boss near a center of the substrate and a thinned sensing portion that is elastically deformable and pressure-sensitive positioned radially outward from the boss. At least one dielectric layer is on the top side of the substrate. A plurality of piezoresistors are on the dielectric layer, wherein the piezoresistors are positioned over the thinned diaphragm portion. At least one overglaze layer is over the conductor layer that provides apertures for electrically contacting the plurality of piezoresistors. A sensing system includes a housing including at least a first port for coupling to a fluid for measurement of a pressure of the fluid and at least one sensor in the housing including a pressure sensor according to an embodiment of the invention.

A mechanical deformation amount sensor includes a sensor structure which is formed by a semiconductor substrate or an insulating substrate and integrally includes a deformation portion deformable, when a physical quantity to be detected is applied to the sensor structure, due to the physical quantity and a support portion for supporting the deformation portion, a carbon nanotube resistance element which is provided on the deformation portion so as to be mechanically deformed in response to deformation of the deformation portion and a wiring pattern which is formed in a pattern on the sensor structure so as to be connected to the carbon nanotube resistance element. By applying a voltage to the carbon nanotube resistance element via the wiring pattern, a change of electrical conductivity of the carbon nanotube resistance element upon mechanical deformation of the carbon nanotube resistance element is fetched as an electrical signal.

A fluid pressure sensor for a lead or catheter intended for placement in a living organism, such as a human heart, includes a rigid annular or tubular supporting structure and a piezoelectric element disposed on at least a portion of the outer surface thereof. The piezoelectric element delivers an electrical signal when subjected to a pressure variation, and exhibits circumferential sensitivity. The rigidity of the sensor is defined to satisfy predetermined criteria to ensure that the sensor, when sensing pressure transferred to the sensor through an on-growth of tissue on the sensor, which is at least 90% of the signal which the sensor would emit without the on-growth.

The invention relates to an integrated silicon chip for testing acceleration, pressure and temperature, and the manufacturing method thereof. The invention is characterized in manufacturing the pressure sensor, temperature sensor and accelerometers of thermoelectric pile on to one chip by the same micro processing technology. The acceleration is detected by adopting thermal convection type accelerometers, using polysilicon resistor as heater, using a thermoelectric pile composed of two pairs of metals (such as aluminium and tungsten-titanium) and P type or N type polysilicon to detect the temperature difference in the sealed cavity caused by acceleration. The high accurate absolute pressure sensor is manufactured by using silicon nitride film with low stress as the core structure layer of the pressure sensor chip, and forming force sensitive resistor track by polysilicon film, forming vacuum reference cavity by TEOS bolt in LPCVD furnace. At the same time, the temperature sensor is composed by using polysilicon thermistor to detect temperature change. The integrated chip achieves the advantages of microminiaturization, low cost, high precision, high reliability and high stability.

A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.

An absolute pressure sensor is disclosed that includes a plurality of pressure sense die and a hermetically sealed cover located above the plurality of pressure sense die. A carrier can be provided to which the pressure sense die are mounted by a cured adhesive. The carrier and the pressure sense die can be attached to a circuit board populated with a plurality of surface mounted components for electrical connection to the absolute pressure sensor. An ASIC can also be provided for digitally calibrating the pressure sense die with temperature compensation, wherein the ASIC automatically controls a plurality of output modes thereof during calibration.

The invention provides a scale measuring device for a pitching dynamic derivative experiment. An electric motor is arranged in a motor support rod; a motor output shaft is connected with a transmission shaft via a speed reducer and a shaft coupling; the transmission shaft is rotationally connected with a scale support rod; the rear end of the scale support rod is fixedly connected with the front end of the motor support rod; the front end of the transmission shaft is provided with an eccentric wheel which is provided with a lug; the lug is inserted into a sliding chute of a slide block; upper and lower cross springs of a cross spring scale have a crisscross structure respectively, and the front and rear ends thereof are fixedly connected with a scale frame via a front seat; and central positions of the upper and lower cross springs are provided with supporting cylinders. The scale measuring device for the pitching dynamic derivative experiment is a novel pitching dynamic derivative scale device. A pitching direct derivative of an aerial craft and a rolling crossover derivative induced by yaw oscillation can be measured under a big attack angle by designing a special vibrating mechanism, the cross spring scale and a pitching five-component scale structure. The scale measuring device for the pitching dynamic derivative experiment can meet the requirement of a wind tunnel trial.

The invention discloses a pressure sensor based on Si-Si direct bonding, comprising a silicon substrate (1) with a shallow groove (8); the silicon substrate (1) is provided with a single crystal silicon stress membrane (2); a silicon dioxide layer (3) is arranged between the silicon substrate (1) and the stress membrane (2); four P-type single crystal silicon piezoresistors (4) are arranged on the stress membrane (2); an insulating medium silicon dioxide layer (7) is arranged among the stress membrane (2) and the piezoresistors (4); and a Wheatstone bridge is formed among the piezoresistors (4) by utilizing concentrated boron doped silicon (9) and a golden lead (6). The pressure sensor adopts Si-Si direct bonding technology to form the stress membrane and the sealing cavity; the piezoresistors thereof adopt silicon dioxide as an insulating layer and the working temperature can be up to 300 DEG C; and the pressure sensor has firm structure and excellent performance and can meet the requirements on high-temperature pressure sensors in the fields of automobile, aerospace and the like. The invention also relates to a manufacturing method of the pressure sensor.

A microelectromechanical device and method of fabricating the same, including a layer of patterned and deposited metal or mechanical-quality, doped polysilicon inserted between the appropriate device element layers, which provides a conductive layer to prevent the microelectromechanical device's output from drifting. The conductive layer may encapsulate of the device's sensing or active elements, or may selectively cover only certain of the device's elements. Further, coupling the metal or mechanical-quality, doped polysilicon to the same voltage source as the device's substrate contact may place the conductive layer at the voltage of the substrate, which may function as a Faraday shield, attracting undesired, migrating ions from interfering with the output of the device.

In oil-filled pressure sensors, the measured pressure is applied to a compliant isolation diaphragm, which causes the pressure of the internal oil to increase until it equals the external pressure. The pressure is sensed by a pressure sensing capsule, such as a MEMS piezoresistive pressure sensor. The invention incorporates an electromagnetic force generator, such as a coil and a magnetic core, within the pressure sensor in order to generate simulated pressure. When the coil is energized, the electromagnetic field creates a uniform distributed force, which moves the isolation diaphragm directly, or via an external flexure, in a manner to cause the pressure of the internal oil to increase, which is sensed by the pressure sensing capsule, which responds by producing an output signal proportional to the electromagnetic force. The simulated pressure is employed in order to perform sensor operation monitoring and self-calibration via measurement of the output signal.

The invention relates to a sensor and guide wire assembly (20) for intravascular measurements of physiological variables in a living body, comprising a core wire (21) and a sensor element (22). The sensor and guide wire assembly (20) comprises further a jacket (25; 35; 45) provided with a first opening (26; 36; 46), in which at least a portion of the sensor element (22) is arranged, and a second opening (27; 37; 47), in which a portion of the core wire (21) is arranged, the first opening (26; 36; 46) and the second opening (27; 37; 47) being separated from each other.

A pressure sensor device includes a pressure sensor cell that includes a sensor chip having a diaphragm with piezo-resistors, an amplifying circuit, and various adjusting circuits, and a base member to which the sensor chip is joined, with the diaphragm facing a through hole of the base member. The base member and a metallic member are joined together with a joining member so that their respective through holes communicate with each other. A protective film or filler covers the joining member between the base member and the metallic pipe member. The metallic pipe member is bonded to a resin case, and a signal terminal of the resin case and the pressure sensor chip are electrically connected together by wire bonding, thus forming a pressure sensor cell. The metallic pipe member protrudes beyond an end face of the resin case to support load.

A circuit element package has a substrate having a plurality of electrically conductive patterns, a die pad, and an access hole formed through the die pad and substrate. A plurality of leads is coupled to the substrate. A circuit element die is attached to the die pad wherein a first sensor port is positioned over the access hole. A die attach membrane is provided for attaching the circuit element die to the die pad. The die attach membrane allows the circuit element die to sense ambient while protecting the circuit element die from environmental damage. An encapsulant is used for covering portions of the circuit element die.

The invention relates to a sensor (23) adapted for a sensor and guide wire assembly for intravascular measurements in a living body, wherein the sensor (23) comprises a pressure sensitive part (24) and an electronic part (25), said pressure sensitive part (24) comprising a first chip (26) provided with at least one pressure sensitive device (27) and at least one piezoelectric element (35), and said electronic part (25) comprising a second chip (28) provided with at least one electric circuit, and wherein said pressure sensitive part (24) and electronic part (25) are spatially separated from each other and are electrically connected with at least one electrical lead (29).

The invention discloses an MEMS pressure sensor and a manufacturing method thereof. The MEMS pressure sensor comprises an MEMS pressure sensing chip, wherein the MEMS pressure sensing chip is arranged at a Wheatstone bridge formed on the crystallographic orientation of a monocrystalline silicon film (110) by four polycrystalline silicon resistors, the monocrystalline silicon film comprises a lower silicon wafer, an upper silicon wafer and a purification layer, a cavity body is arranged on the lower silicon wafer, the lower silicon wafer and the upper silicon wafer are bonded together by hot melt silicon-silicon, the surface of the upper silicon wafer is provided with a passivation layer, the polycrystalline silicon resistors are arranged on the upper silicon wafer by a diffusion process, and a conducting wire of a metal film and a press welding block are etched on the upper silicon wafer. The pressure sensor adopting a silicon-silicon bonding structure can be made in a very small size, the number of chips on each silicon wafer can be increased by 50% or more, the silicon-silicon bonding strength is higher, and the air tightness is better. The cost of the sensor is greatly lowered, and the performance is more stable and reliable. The sensor belongs to a pressure sensor with low cost and high performance and has very extensive application.

Implantable pressure sensors and methods for making and using the same are provided. A feature of embodiments of the subject pressure sensors is that they are low-drift sensors. The subject sensors find use in a variety of applications.

A sensor and insertion assembly 2 is used for intravascular measurement of pressure in a living body. The assembly includes a sensor chip 6 having a substrate body 8 with a recess covered by a pressure sensitive film 10 thereby forming a cavity 12. A piezoelectric element, preferably in the form of a piezoelectric film 14, is arranged in connection with the pressure sensitive film, and energy is applied to the piezoelectric element such that acoustic waves are generated in the element. The piezoelectric element is arranged to generate an output signal, representing the pressure at the film, in dependence on the measured properties of the acoustic waves related to the deflection of the pressure sensitive film.

Provided is a pressure sensor including an elastic thin film including a first surface and a second surface that face each other, the elastic thin film including an elastomer material, a plurality of protruding deformable structures patterned on the first surface; a piezoresistive electrode formed along surfaces of the plurality of protruding deformable structures; and a counter electrode disposed to face the piezoresistive electrode.

A sensor element having a sensitive sensor portion on an upper side of a substrate layer. The upper side of the substrate layer is provided with a recess on the periphery of the sensitive sensor portion. The recess provides mechanical isolation or decoupling of the sensitive sensor portion, as a result of which external forces do not cause stress in the sensitive sensor portion. In addition, a sensor assembly is described which is provided with at least one sensor element and a casing.

The invention discloses a preparation method of a flexible pressure sensor based on a carbon nanotube and a high-molecular polymer. According to the preparation method, the carbon nanotube is doped in a polymer substrate, thereby obtaining an elastomer material having electrical conductivity; and an electrode and a composite material are assembled, thereby building a flexible pressure sensor. After a circuit is accessed, the conductive elastomer converts self-deformation into a resistance change under the function of external force, and detection of pressure is realized through measurement of an electrical signal. A microcosmic structure of the surface of the elastomer material is modified, unique surface appearance enables the elastomer material to only present elastic behavior, but creepage does not occur, and a rapid response can be made to pressure applied by the outside world, thereby greatly improving sensitivity of the sensor.

Implantable pressure sensors and methods for making and using the same are provided. A feature of embodiments of the subject pressure sensors is that they are low-drift sensors. The subject sensors find use in a variety of applications.

In a piezo resistance type semiconductor device, a detecting sensitivity and output linearity are improved without increasing a forming region of a diaphragm. In a piezo resistance type semiconductor device having: a diaphragm; a supporting frame which is connected to an external periphery of the diaphragm, supports the diaphragm, and is formed relatively thicker than the diaphragm; and piezo resistance type stress detectors (4a, 4b) each for detecting a stress caused when the detector is distorted by deformation of the diaphragm by application of an acceleration or a pressure in the direction perpendicular to the diaphragm, at least a part of the diaphragm is cut off in a position where it is come into contact with the piezo resistance type stress detector and a groove is formed.

The invention provides a beam-film combined micro-pressure sensor which comprises a base 4; a silicon micro-pressure chip 5 of a (100) crystal face is configured in the base 4; the front of a siliconsheet of the silicon micro-pressure chip 5 is corroded to form beams 11and 11' which are vertical to each other, and the back of the silicon sheet is corroded to form a flat film 10; the beam 11 and the beam 11', as well as beams around the silicon sheet form a beam shaped like a character tian so as to form a beam-film structure; pressure to be measured acts on the back of the back of the siliconsheet 5; a silicon membrane generates stress to cause the changes of resistors on the beams so as to measure a pressure value. The invention integrates the elasticity of a sensor, a sensitive elementand a conversion circuit and greatly reduces the sluggish and repeatability errors of the sensor in the process of measurement, thereby improving the measurement accuracy of the sensor. The inventioncan be widely used in oil logging, industrial automation, chain drive, national defense research and other fields.

An entirely surface micromachined free hanging strain-gauge pressure sensor is disclosed. The sensing element consists of a 80 μm long H-shaped double ended supported force transducing beam (16). The beam is located beneath and at one end attached to a square polysilicon diaphragm (14) and at the other end to the cavity edge. The sensor according to the invention enables a combination of high pressure sensitivity and miniature chip size as well as good environmental isolation. The pressure sensitivity for the sensor with a H-shaped force transducing beam, 0.4 μm thick was found to be 5 μV/V/mmHg.

This invention is neotype pressure resistance pressure sensor, including inward-leg wire, package outer, outward-leg wire, pin hole, substrate and the piezoresistor, installing the close structure piezoresistor and the banding piezoresistor,; the four piezoresistors make up of the Wheatstone bridge interconnect structure, a-alloy sputtering from the pin hole, installing the electronic glass mass on the surface of close structure outer. The production method is: (1)mixing; (2)surface thermal oxidization; (3)technic-processing of photoetch and plasma corrosion;(4)photoengraving the pin hole; (5)sputtering a-alloy; (6)static electrostatic encapsulating electronic glass; (7)testing and capsulation. The technic-scheme of this invention makes the production-craft more simple, and compatible with the craft of CMOS integrated circuit plate, and have more high harmonic frequency, and can work in the high temperature circumstance and assuring the compatibility of the production performance.

The invention is suitable for the technical field of sensor manufacturing and packaging, and discloses a flexible electronic pressure sensing device and a preparation method thereof. The flexible electronic pressure sensing device comprises a flexible casing. The flexible casing is provided with an internal cavity. The internal cavity comprises a number of array channels and a communication cavitywhich is communicated with the same end face of a number of array channels. A liquid metal conductor is arranged in the internal cavity. The flexible casing is connected with at least two electrodesin contact with the liquid metal conductor. The preparation method of the flexible electronic pressure sensing device is used to prepare the flexible electronic pressure sensing device. According to the flexible electronic pressure sensing device and the preparation method thereof, the flexible electronic pressure sensing device can completely fit a three-dimensional complex static/dynamic surfaceto complete contact pressure measurement, and has the advantages of high stability, precision, accuracy and reliability, high temperature resistance, wide application range and long service life.

The pressure sensor device has a laminated diaphragm (12) in which a strain resistance gauge is formed in a surface and a stopper member (13) including a concave portion forming a curved surface parallel to a surface formed by displacement of the diaphragm, the concave portion being disposed to face the diaphragm. Specifically, the concave portion of the stopper member is formed into a curved surface in which depth y at a distance x from the center of the diaphragm is expressed by a quartic function [y=pr⁴(1−x²/r²)²/64D] in relation to the operating pressure for protection against maximum pressure p when the diaphragm has a radius of r, a thickness of t, and a flexural rigidity of D.

A fluid containment system including a vessel for containing a fluid that is discharged from the vessel in use or operation of the system. A pressure monitoring assembly including a strain-responsive sensor is disposed on an exterior wall surface of the vessel, to sense dynamic strain on the wall surface of such vessel that is incident to discharge of fluid from the vessel, and to responsively output a pressure-indicative response. Such arrangement is particularly useful in application to fluid storage and dispensing vessels containing interiorly disposed pressure regulator assemblies and holding liquefied gases or compressed gases, e.g., for use in semiconductor manufacturing operations.