231 results about "Mems pressure sensor" patented technology

A pressure sensor assembly comprised of a single and dual layer diaphragm with integrated force sensing flexure, such as a cantilever beam. Strain gages are positioned on the force sensing beam. The pressure forces the diaphragm to deflect. The deflection is constrained by the beam, which is compelled to bend. The bending induces strains in strain gages located on the beam. The strain gages are connected in a Wheatstone bridge configuration. When a voltage is applied to the bridge, the strain gages provide an electrical output signal proportional to the pressure. Composite diaphragm—beam pressure sensors convert pressure more efficiently and improve sensor performance.

A post-mix beverage valve provides for automatic, accurate beverage ratioing. A valve body can be assembled, and includes a water flow hard body, syrup body and common nozzle body. The water and syrup flow bodies define flow channels and include one end for connection to water and syrup respectively, and opposite ends for fluid connection to the nozzle body. The water flow channel includes a turbine flow sensor connected to a micro-controller determining the water flow rate. The syrup flow channel includes a flow sensor, two MEMS pressure sensors, monitoring the syrup. The sensors are connected to the micro-controller and positioned about an orifice and senses sense a differential pressure indicative of syrup flow rate solenoid regulates flow of syrup through the syrup body. A stepper motor on the water body controls a rod in the flow channel in conjunction with a v-groove.

A MEMS pressure sensor wherein at least one of the electrode arrangements comprises an inner electrode and an outer electrode arranged around the inner electrode. The capacitances associated with the inner electrode and the outer electrode are independently measured and can be differentially measured. This arrangement enables various different read out schemes to be implemented and also enables improved compensation for variations between devices or changes in device characteristics over time.

A microelectromechanical systems (MEMS) pressure sensor device (20, 62) includes a substrate structure (22, 64) having a cavity (32, 68) formed therein and a substrate structure (24) having a reference element (36) formed therein. A sense element (44) is interposed between the substrate structures (22, 24) and is spaced apart from the reference element (36). The sense element (44) is exposed to an external environment (48) via one of the cavity (68) and a plurality of openings (38) formed in the reference element (36). The sense element (44) is movable relative to the reference element (36) in response to a pressure stimulus (54) from the environment (48). Fabrication methodology (76) entails forming (78) the substrate structure (22, 64) having the cavity (32, 68), fabricating (84) the substrate structure (24) including the sense element (44), coupling (92) the substrate structures, and subsequently forming (96) the reference element (36) in the substrate structure (24).

An integrated MEMS pressure sensor is provided, including, a CMOS substrate layer, an N+ implant doped silicon layer, a field oxide (FOX) layer, a plurality of implant doped silicon areas forming CMOS wells, a two-tier polysilicon layer with selective ion implantation forming a membrane, including an implant doped polysilicon layer and a non-doped polysilicon layer, a second non-doped polysilicon layer, a plurality of implant doped silicon areas forming CMOS source/drain, a gate poly layer made of polysilicon forming CMOS transistor gates, said CMOS wells, CMOS transistor sources/drains and CMOS gates forming CMOS transistors, an oxide layer embedded with an interconnect contact layer, a plurality of metal layers interleaved with a plurality of via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. N+ implant doped silicon layer and implant doped/un-doped composition polysilicon layer forming a sealed vacuum chamber.

The invention discloses an MEMS pressure sensor and a manufacturing method thereof. The MEMS pressure sensor comprises an MEMS pressure sensing chip, wherein the MEMS pressure sensing chip is arranged at a Wheatstone bridge formed on the crystallographic orientation of a monocrystalline silicon film (110) by four polycrystalline silicon resistors, the monocrystalline silicon film comprises a lower silicon wafer, an upper silicon wafer and a purification layer, a cavity body is arranged on the lower silicon wafer, the lower silicon wafer and the upper silicon wafer are bonded together by hot melt silicon-silicon, the surface of the upper silicon wafer is provided with a passivation layer, the polycrystalline silicon resistors are arranged on the upper silicon wafer by a diffusion process, and a conducting wire of a metal film and a press welding block are etched on the upper silicon wafer. The pressure sensor adopting a silicon-silicon bonding structure can be made in a very small size, the number of chips on each silicon wafer can be increased by 50% or more, the silicon-silicon bonding strength is higher, and the air tightness is better. The cost of the sensor is greatly lowered, and the performance is more stable and reliable. The sensor belongs to a pressure sensor with low cost and high performance and has very extensive application.

A MEMS pressure sensor for sensing the pressure in a sealed cavity of a MEMS device, comprises a resonant MEMS device having a pressure sensor resonator element which comprises an array of openings. The resonant frequency of the resonant MEMS device is a function of the pressure in the cavity, with resonant frequency increasing with pressure. Over the pressure range 0 to 0.1 kPa, the average change in frequency is at least 10⁻⁶/Pa.

The invention is based on the recognition that for fast oscillation, the elastic force causes the resonance frequency to shift. Therefore, it is possible to sense the pressure by a device with resonance frequency that is sensitive to the pressure.

An implantable pressure sensor system having a sensor assembly configured and adapted to measure pressure in a volume, the sensor assembly including at least a first MEMS pressure sensor, an application-specific integrated circuit (ASIC) having memory means, temperature compensation system, drift compensation system, and power supply means for powering the sensor assembly, the first MEMS pressure sensor having a pressure sensing element that is responsive to exposed pressure, the pressure sensing element being adapted to generate a pressure sensor signal representative of the exposed pressure, the temperature compensation system being adapted to correct for temperature induced variations in the pressure sensor signal, the drift compensation system being adapted to correct for pressure and temperature induced pressure sensor signal drift.

The invention discloses an MEMS pressure sensor chip based on an SOI technology and a manufacturing method of the MEMS pressure sensor chip. The MEMS pressure sensor chip is suitable for absolute pressure measurement and comprises a monocrystalline silicon substrate. A flat elastic membrane is arranged on a groove of the monocrystalline silicon substrate. The edge of the elastic membrane is provided with corrosion holes. The elastic membrane and the groove of the silicon substrate form an airtight cavity. Four monocrystalline silicon strain resistors are arranged on the elastic membrane. All the monocrystalline silicon strain resistors are isolated from one another through insulating media, and the monocrystalline silicon strain resistors are also isolated from the elastic membrane through insulating media. The four strain resistors are connected through metal wires to form a Wheatstone bridge so as to convert pressure into a voltage and output the voltage. The MEMS pressure sensor chip has the advantages of being small in size, good in repeatability and hysteresis, high in sensitivity, wide in operating temperature range, and the like; besides, the manufacturing technique is compatible with the integrated circuit technique.

The invention provides a method for manufacturing micro-electro-mechanical system (MEMS) pressure sensors. The method comprises the following steps: a pressure chamber opening is formed in a semiconductor substrate; an insulator upper silicon substrate is bonded to the semiconductor substrate so as to form a pressure chamber; the insulator upper silicon substrate comprises a top silicon layer, an oxygen embedding layer and a substrate silicon layer, wherein the top silicon layer is bonded to the semiconductor substrate; the substrate silicon layer is removed till exposing the oxygen embedding layer; a silicon oxide layer is formed on the oxygen embedding layer; the silicon oxide layer and the oxygen embedding layer are etched till exposing the top silicon layer, so as to form an opening corresponding to the position of a follow-up sensitive resistor; ions are injected into the top silicon layer along the opening, so as to form a sensitive resistor; a conducting layer is formed on the silicon oxide layer; and the opening is filled with the conducting layer, so as to form an electrode communicated with the sensitive resistor. The invention also provides an MEMS pressure sensor. The method can accurately control the thickness of a sensitive film and the position of the sensitive resistor, thereby improving the sensitivity and linearity of the pressure sensor.

Integrated MEMS devices for pressure sensing and inertial sensing, methods for fabricating such integrated devices, and methods for fabricating vertically integrated MEMS pressure sensor/inertial sensor devices are provided. In an example, a method for fabricating an integrated device for pressure and inertial sensing includes forming a MEMS pressure sensor on a first side of a semiconductor substrate. The method further includes forming a MEMS inertial sensor on a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.

The invention relates to a package structure of a high-temperature pressure sensor, comprising a silicon carbide sensitive chip, an aluminum nitride base, a stress buffer substrate, a high-temperature sealing glass, a lead post, a Kovar outer cover and a thermocouple, wherein the aluminum nitride base is There is a boss on the surface, a stress buffer substrate is placed on the boss, and a silicon carbide sensitive chip is placed on the stress buffer substrate; the periphery of the boss is a stress isolation groove, and there are two or more through holes on the periphery of the stress isolation groove. The column passes through the through hole and is sintered by high-temperature sealing glass to realize the fixed connection between the lead column and the aluminum nitride base. The thermocouple is installed on the lower surface of the aluminum nitride base, and the aluminum nitride base is placed on the Kovar housing through the positioning steps. In addition, the aluminum nitride base and the Kovar cover are sintered and connected through high-temperature sealing glass. The packaging structure is resistant to high temperature, effectively reduces the influence of process stress and high temperature thermal stress on the sensitive chip of the MEMS pressure sensor, and further improves the high temperature measurement accuracy of the sensor.

The invention relates to a sensitive chip of a pressure sensor, in particular to a hidden-type MEMS pressure sensor sensitive chip and a manufacturing method thereof. According to the hidden-type MEMS pressure sensor sensitive chip and the manufacturing method, the problem that component performance and service life of an existing silicon piezoresistive pressure sensor are not ideal is solved. The hidden-type MEMS pressure sensor sensitive chip comprises an SOI wafer component layer (1) and a glass substrate (5), wherein the SOI wafer component layer (1) is formed by the practice that a substrate layer of an SOI wafer is etched in an etching process based on a stopping layer, and the BOX layer of the SOI wafer is taken as the stopping layer. Four voltage dependent resistors of the Wheatstone bridge including R1, R2, R3 and R4, eight doping wires (3) and eight connection anchor points (2) are manufactured on the SOI wafer component layer (1). The hidden-type MEMS pressure sensor sensitive chip and the manufacturing method are reasonable in design, the manufacture hidden-type MEMS pressure sensor sensitive chip overcomes influences of external environment factors on a component circuit, the defect that component performance is reduced due to thermal mismatch of materials is eliminated, and service life of components is prolonged.

A capacitive type MEMS pressure sensor, comprising a substrate (1), a detection thin film (2), an upper electrode plate (4) with a leading wire, and a lower electrode plate (3) with a leading wire. The detection thin film (2) is fixedly laid on an upper surface of the substrate (1). The upper electrode plate (4) is fixedly connected to the upper surface of the substrate (1) or the detection thin film (2). The upper electrode plate (4) is located above the detection thin film (2) and a gap (8) is formed between same and the detection thin film (2). The lower electrode plate (3) is fixedly arranged on the detection thin film (2). The lower electrode plate (3) is located in the gap (8) between the detection thin film (2) and the upper electrode plate (4). The lower electrode plate (3) and the upper electrode plate (4) constitute a capacitor. When a device is designed, the dimensions of the device can be more flexibly adjusted under specified device parameters so as to reduce costs. Moreover, the problem of changes in nonlinear and dynamic response ranges in the traditional pressure sensor is avoided in the structure of the device.

A MEMS pressure sensor device comprises a sensor element positioned on top of a carrier and a cavity. The sensor element hermetically seals the cavity. An electrode is coupled to the cavity that forms a pressure transducer together with the sensor element. The cavity is created by a density changing material.

The invention proposes a dual-SOI-structured MEMS pressure sensor chip and a manufacturing method thereof. The dual-SOI-structured MEMS pressure sensor chip comprises a first SOI structure and a second SOI structure, wherein the first SOI structure comprises a substrate and a pressure sensitive film of a pressure sensor, the second SOI structure is a surface-layer SOI structure and comprises a piezoresistor material which is formed by growing insulation isolation medium and depositing and doping alpha-silicon on the insulation medium, a Wheatstone bridge structure is formed through etching, and the second SOI structure replaces the conventional PN junction isolating mode and increases the operating temperature range of the sensor chip. The dual-SOI-structured high-temperature MEMS pressure sensor chip related by the invention is suitable for mass production, and has good consistency, precise measuring range, small chip size, high temperature resistance, high reliability and low cost.

Disclosed are a multi-degree-of-freedom microsensor module and packaging modes thereof. The multi-degree-of-freedom microsensor module comprises a multi-degree-of-freedom MEMS (micro-electro mechanical system) acceleration meter, a multi-degree-of-freedom MEMS gyroscope, a multi-degree-of-freedom MEMS magnetic sensor, an MEMS pressure sensor, a GPS (global positioning system)/Beidou navigation satellite system chip and an ASIC (application specific integrated circuit). The multi-degree-of-freedom microsensor module is characterized in that the multi-degree-of-freedom MEMS (micro-electro mechanical system) acceleration meter, the multi-degree-of-freedom MEMS gyroscope, the multi-degree-of-freedom MEMS magnetic sensor, the MEMS pressure sensor, the GPS (global positioning system)/Beidou navigation satellite system chip and the ASIC (application specific integrated circuit) are packaged and integrated by the substrate-based packaging technology or packaged into an integrated module by the system-level packaging technology. The invention further provides various packaging modes of the module. The multi-degree-of-freedom microsensor module and the packaging modes thereof have the advantages that multi-degree-of-freedom physical quantity detection can be provided for equipment, design and packaging cost of various sensors can be greatly reduced, reliability of the sensors is improved, and the multifunctional sensors are wider in application field.

A variable inductor type MEMS pressure sensor using a magnetostrictive effect comprises an inductor array unit and a capacitor unit. The inductor array unit includes a coil unit having a plurality of serially connected circular electrodes formed on a first substrate and a magnetostrictive material thin film corresponding one by one to the circular electrode formed on a second substrate opposite to the first substrate at a predetermined distance in parallel to form an inductor which has the magnetostrictive material thin film as a core of the coil unit for inducing change of magnetic permeability of the magnetostrictive thin film depending on external pressure to vary inductance of the inductor. The capacitor unit constitutes a LC resonant circuit with the inductor array unit to convert magnetic energy discharged in the inductor array unit into a voltage. The variable inductor type MEMS pressure sensor has an excellent resolution because it is more sensitive than a conventional piezoresistive or capacitance sensor, and is manufactured using a MEMS process technology exchangeable with a semiconductor process, thereby enabling miniaturization and a mass package process to reduce the cost of production.