97 results about "Mems pressure sensor" patented technology

The invention provides an MEMS pressure sensor and a manufacturing method thereof, and an electronic device, and the method comprises the steps: providing a first substrate, forming at least two first pressure structures on the surface of the first substrate, each first pressure structure comprises a first electrode layer, a first sacrificial layer, a first supporting layer, a second electrode layer, a second supporting layer, and a first cavity, and a first release hole; a second substrate is provided, at least two second pressure structures are formed on the surface of the second substrate, and each second pressure structure comprises a third electrode layer, a second sacrificial layer and a second cavity; bonding the second supporting layer with the second sacrificial layer; the second substrate is removed to expose the third electrode layer, the third electrode layer and the second electrode layer form a variable capacitance structure, the second electrode layer and the first electrode layer form a reference capacitance structure, and the two variable capacitance structures and the two reference capacitance structures jointly form a Wheatstone bridge. According to the scheme, the measurement precision is improved, and the device performance is further improved.

The invention provides an MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, forming a first pressure structure on the first substrate, and forming a second pressure structure on the second substrate; bonding the first pressure structure and the second pressure structure; the first substrate is removed, the first pressure structure and the second pressure structure jointly form a third pressure structure, the third pressure structure comprises a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a fifth electrode layer which are arranged at intervals from top to bottom, and a dielectric layer is formed between every two adjacent electrode layers; and cavities penetrating through the dielectric layers are formed in the dielectric layers. According to the scheme, the multiple electrode layers arranged from bottom to top are formed, the multiple electrode layers form the first capacitor, the second capacitor, the third capacitor and the fourth capacitor respectively, then the Wheatstone bridge is formed jointly, the measurement precision of the MEMS pressure sensor is improved, meanwhile, the plane size of the MEMS pressure sensor is reduced, and the integration level of the device is improved.

The invention discloses a test system applied to performance testing of a high-pressure cold helium solenoid valve, and relates to the field of low-temperature fluid engineering. According to a method, a multi-dimensional radial pressure difference sampling point is arranged in a cold helium channel of the solenoid valve, and a high-frequency sampling MEMS pressure sensor and a speed inversion algorithm are combined; the system can calculate the velocity component V (x, r, t) and the rotation delta * V (x, r, t) of the radial r position of the valve body at the x position in the cold helium flowing direction at the t moment in real time, and construct a local disturbance spectrum energy density function Md based on the disturbance weighting function N (x, r) of the radial r position of the valve body at the x position in the cold helium flowing direction. The method not only breaks through the technical limitation that only the total flow velocity of cold helium is monitored in the prior art, but also can realize real-time discrimination of the disturbance level by constructing the disturbance interval threshold, provides a reliable basis for subsequent adjustment decision, and effectively improves the early sensing ability of the test system to local flow state abnormity.

The invention relates to the technical field of pressure sensors, and discloses a piezoresistive multi-range MEMS pressure sensor and a processing method thereof. The piezoresistive multi-range MEMS pressure sensor comprises: a pressed diaphragm; the mass blocks comprise a central mass block and a fixed mass block; the insulating layer is clamped between the pressed diaphragm and the mass block; the piezoresistor is arranged on one side, deviating from the mass block, of the pressed diaphragm; the at least two supporting frames are located in the pressure groove, each supporting frame surrounds the center mass block and is spaced from the center mass block, the supporting frame adjacent to the center mass block is connected with the center mass block through a first connecting beam, and the supporting frame adjacent to the fixed mass block is connected with the fixed mass block through a second connecting beam; every two adjacent supporting frames are connected through a third connecting beam. The piezoresistive multi-range MEMS pressure sensor disclosed by the invention is simple in structure and easy to process, and not only realizes multi-range acting force detection, but also realizes micro-range high overload measurement.

The invention relates to the technical field of micro-electro-mechanical system sensors, in particular to an MEMS pressure sensor which comprises a shell, an induction diaphragm and an ASIC signal processing unit, an induction mounting cavity and a signal processing cavity are formed in the shell, an air inlet is formed in the lower end face of the shell, a detection channel and a buffer cavity are formed in the shell, and the detection channel is communicated with the signal processing cavity. The buffer cavity is designed to be gradually expanded from bottom to top; pulse airflow firstly enters the detection channel through the air inlet, and direct disordered impact of the airflow is avoided; then the airflow enters the buffer cavity, the airflow speed and the pressure peak value are gradually reduced and the pulse energy is dispersed by utilizing the characteristic that the cross sectional area of the cavity is gradually increased, and the originally concentrated strong impact force is converted into gentle pressure transmission, so that the abrasion and damage risks caused by the fact that the sensing diaphragm frequently bears the violent pressure are reduced; the structure stability and the sensing sensitivity of the sensing diaphragm can be maintained, and the accuracy of pressure detection and the reliability of long-term work of the MEMS pressure sensor can be guaranteed.

The invention belongs to the technical field of integrated circuit packaging, and particularly relates to an integrated corrosion-resistant MEMS pressure sensor and a manufacturing method thereof. Comprising a PCB substrate, and an MEMS chip and an ASIC chip are mounted on the PCB substrate. The box dam forms double chambers for physical isolation; the box dam is bonded to the top of the PCB substrate through corrosion-resistant glue, the MEMS chip and the ASIC chip are separated through the double cavities, and the cavities where the MEMS chip is mounted are filled with corrosion-resistant protective gel so as to completely cover the MEMS chip; and the metal cover plate is bonded to the top of the box dam through corrosion-resistant glue, and a through hole is formed in one side of the top of the metal cover plate. According to the MEMS pressure sensor, the problem of miniaturization and standardization of the existing MEMS pressure sensor is solved, and the corrosion resistance requirement is met; the manufacturing process is suitable for batch high-precision machining, the product yield is improved, and the product cost is reduced.

The invention discloses an acceleration test method for an MEMS pressure sensor, which comprises the following steps of: acquiring an MEMS pressure sensor sample which comprises a deformable membrane structure; a stress application structure is arranged on the membrane structure, and the stress application structure is a built-in electrode or an external electrode plate; applying voltage to the stress application structure, and enabling the membrane structure to deform through electrostatic force, which is equivalent to environment pressure input; installing the MEMS pressure sensor in a multi-environmental stress test device, and synchronously loading at least one environmental stress of temperature, humidity, vibration or impact; and monitoring the performance parameter change of the MEMS pressure sensor, and evaluating the reliability of the MEMS pressure sensor. By designing the stress application structure, the electrostatic force generated by loading the direct-current voltage simulates the pressure film structure to realize the input of the environmental pressure, additional equipment is not needed, and the test method is convenient and easy to implement.

The invention discloses a magnetorheological polishing liquid supply system and method based on a jet technology, and relates to the technical field of magnetorheological polishing, the magnetorheological polishing liquid supply system comprises a liquid storage and conveying module, the liquid storage and conveying module comprises a liquid storage device, a conveying device and a pulsation attenuation module, and the magnetorheological pulsation attenuation module is provided with a magnetorheological pulsation attenuator which is connected in series between an outlet of a servo variable pump and a conveying pipeline; the spraying execution module comprises a nozzle and a position adjusting assembly; the multi-dimensional detection module comprises a visual sensor, a Coriolis flow meter and an MEMS pressure sensor; the modeling and predicting module is used for calculating pipeline resistance according to the relative position of the nozzle and the workpiece and predicting pulsation by decomposing a pump pulsation rule through Fourier transform; and the dynamic regulation and control module is used for controlling the attenuator to counteract the pulsation according to the pulsation prediction output reverse current, and regulating the displacement and the rotating speed of the pump in real time through a fuzzy PID algorithm in combination with preset target flow and pressure. The problem that in the prior art, the injection parameter control precision is limited is solved, and high-precision regulation and control are achieved.

The invention belongs to the technical field of MEMS (Micro Electro Mechanical System) manufacturing, and particularly relates to a deep corrosion method for a back cavity of an MEMS pressure sensor. Comprising the following steps: constructing a'preset reference-gradient rough corrosion-real-time correction-precise fine corrosion 'closed-loop control system: firstly, establishing a precise temperature-corrosion rate corresponding relation through a QC wafer experiment; according to the target depth of the back cavity, multiple rounds of gradient rate coarse corrosion processes are planned, the corrosion depths of all rounds are distributed according to the proportion from large to small, and the corrosion rate is decreased progressively along with the rounds through temperature regulation and control to rapidly approach 80%-95% of the target depth; the depth is detected immediately after each round of corrosion, and targeted correction of'parameter fine adjustment 'or'deviation compensation' is realized based on a double-threshold criterion; and finally, turning to multiple rounds of low-rate fine corrosion, continuing a gradient rate and a real-time correction strategy, and precisely closing a loop to a target depth. According to the invention, submicron level control of the depth of the back cavity is realized, the process stability and adaptability are high, and the performance consistency and the large-scale production yield of the MEMS pressure sensor are effectively improved.

The invention discloses a function test system, method and device for an MEMS pressure sensor, and the system comprises a production test device which comprises a production test sealing chamber; the production test input pneumatic port is used for being pneumatically connected with a target pressure instrument for pressure input; the production test detection pneumatic port is used for being pneumatically connected with an MEMS pressure sensor for pressure detection; the function test equipment is used for collecting the detected pressure data from the MEMS pressure sensor and carrying out function test according to the pressure data to obtain a function test result; the production test microcontroller is used for triggering the function test equipment to synchronously collect pressure data with the pressure input; and the data analysis module is used for acquiring and associating the verification result and the function test result, so that the test synchronism and the data relevance are optimized, the test result has a traceable measurement basis, the fault traceability and problem positioning efficiency is improved, and the test data credibility is improved.

This invention belongs to the field of pressure sensors, specifically relating to an oil-filled core for a MEMS pressure sensor suitable for high-pressure, small-molecule media. It comprises a pressure ring, a corrugated diaphragm, a core base, sealing steel balls, and components such as silicone oil, a ceramic seat, a pressure chip, and leads located within a sealed cavity formed by the corrugated diaphragm and the core base. This invention addresses the shortcomings of traditional oil-filled cores for MEMS pressure sensors by improving the design in multiple structural and manufacturing aspects, solving problems such as small-molecule media infiltration, lead breakage failure, and high-pressure connection sealing. It is particularly suitable for accurate pressure measurement of high-pressure, small-molecule media.

The invention discloses an on-line radiation monitoring and power-off protection MEMS pressure sensor and a preparation method thereof. The sensor can synchronously realize pressure measurement, radiation monitoring and power-off protection functions on a single chip. On the basis of realizing high-precision pressure measurement, the sensor is provided with a platinum film resistor in a specific area and is coated with an electromagnetic wave absorbing material to form a radiation sensing unit, so that the on-line monitoring on the electromagnetic radiation intensity of the environment is realized. The protection circuit closely integrated with the sensor continuously analyzes radiation dose signals, and once it is judged that the dose exceeds a preset safety threshold value, a control signal is generated, a power supply access of the pressure measurement unit is actively cut off, the pressure measurement unit is made to enter a dormant state, and therefore irreversible performance degradation or permanent damage is avoided. According to the invention, the conversion from passive bearing to active protection during the working of the sensor is realized, and the reliability of long-term working in an extreme electromagnetic environment is obviously improved.

This invention relates to the field of power system safety assurance technology, specifically providing a circuit breaker with operation monitoring function and its monitoring method. The circuit breaker includes: a circuit breaker spring, a base housing fixed to one end of the circuit breaker spring, a deformation assembly, a transmission assembly, and a detection assembly within the base housing. The deformation assembly visualizes the minute deformation generated by the spring and generates relative displacement. The transmission assembly uses a lever amplification method to transmit the displacement to the detection assembly. The detection assembly includes a piston and a MEMS pressure sensor. One end of the piston is connected to the transmission assembly, and the other end is movably sealed within a closed space, where the MEMS pressure sensor is located. This invention effectively converts the minute deformation of the circuit breaker spring into changes in air pressure, introducing a MEMS pressure sensor to achieve high-precision monitoring. It possesses strong anti-interference capabilities, meets the requirements of low false alarms and zero calibration, reduces operation and maintenance costs, and offers high monitoring accuracy and reliability.

The invention relates to an MEMS pressure sensor and a preparation method thereof in the technical field of micromachining. The MEMS pressure sensor comprises a substrate, a silicon wafer cup-shaped structure layer, a superlattice structure layer, a phosphorus-doped polycrystalline silicon layer, a metal layer, a top silicon dioxide insulation layer and a top silicon nitride protection layer which are sequentially arranged from bottom to top. A cavity structure is formed between the surface of one side, facing the substrate, of the silicon wafer cup-shaped structure layer and the substrate, and an ion implantation block doping layer is formed on the surface layer of one side, facing the superlattice structure layer, of the silicon wafer cup-shaped structure layer; the superlattice structure layer comprises a plurality of composite layers which are sequentially stacked, and each composite layer comprises a silicon dioxide insulation layer, a magnesium oxide buffer layer and a silicon nitride protection layer which are sequentially arranged from the silicon wafer cup-shaped structure layer to the phosphorus-doped polycrystalline silicon layer. The reliability, the environmental adaptability and the signal quality of the MEMS pressure sensor can be remarkably improved, and the MEMS pressure sensor can be better suitable for extreme working conditions or high-precision detection requirement scenes.

The utility model discloses a packaging tool for a high-performance MEMS pressure sensor chip, which comprises a base, a tube socket fixing assembly and a vertical movable assembly, the base is used for bearing the tube socket fixing assembly and the vertical movable assembly, the tube socket fixing assembly is used for fixing a packaging tube socket, the vertical movable assembly can move horizontally and vertically relative to the base, and the tube socket fixing assembly is used for fixing the packaging tube socket. Therefore, the flattening operation of the MEMS pressure sensor chip in the packaging tube socket is realized. According to the packaging tool provided by the utility model, the height of the chip chamber wall is matched with the structures of the flattening column and the horizontal arm, so that the thickness of the fixing glue is accurately controlled, and the consistency of the thickness of the fixing glue is ensured; fixing glue is prevented from diffusing to the vent holes through the anti-overflow columns, and the vent holes are prevented from being blocked; the tube socket cavity can be matched with products with different sizes or shapes through the lining, so that the packaging efficiency is improved; an anti-static gasket on the bottom surface of the flattening column avoids mechanical and static damage to the chip; positioning and pressing are achieved through horizontal sliding and vertical pressing, the operation difficulty is reduced, and the packaging yield is improved.

The invention discloses an oil-filled medium isolation packaging type silicon resonance pressure sensor and a preparation method thereof, belongs to the technical field of MEMS pressure sensors, and solves the problem that an existing pressure sensor is liable to have intermittent faults. The device specifically comprises a tube body, a concave cavity is formed in the top of the tube body, and a silicon resonance chip is arranged in the concave cavity; a cap is mounted at the top of the tube body, an isolation diaphragm is arranged between the cap and the tube body, and silicone oil is filled between the isolation diaphragm and the tube body. According to the invention, a measurement medium enters the cap through the filler neck to extrude the isolation diaphragm, the isolation diaphragm generates micro deformation when sensing the pressure of the medium, the pressure is transmitted to the silicon resonance chip through silicone oil in the pipe body, and the silicon resonance chip converts the external pressure into a perceivable analog signal; in the process, an external measuring medium does not directly act on the silicon resonance chip, so that the problem of intermittent fault or complete failure of the silicon resonance sensor in a corrosive gas or liquid environment is avoided.

The embodiment of the invention relates to a temperature compensation method and device and a readable storage medium, and the method comprises the steps: primary compensation: employing polynomial fitting to build a baseline model based on the original output values of a plurality of groups of MEMS pressure sensors and the surface temperature value of a lithium ion battery, and obtaining the primary compensation output values of the MEMS pressure sensors; dynamic compensation: pre-establishing a database for acquiring a relationship between an internal temperature value of the lithium ion battery and a temperature dynamic compensation coefficient of the MEMS pressure sensor, and calculating a dynamic compensation output value of the MEMS pressure sensor based on the primary compensation output value and the temperature dynamic compensation coefficient; feedback calibration: periodically acquiring the deviation between the measured value and the predicted value of the voltage polarization amplitude of the lithium ion battery, and automatically and reversely correcting the baseline model; according to the invention, the temperature error of the MEMS pressure sensor is dynamically compensated by constructing a multi-stage compensation system and voltage polarization amplitude characteristics.

The invention discloses an MEMS pressure sensor suitable for a new energy battery and a manufacturing method, and relates to the technical field of pressure sensors, the MEMS pressure sensor comprises a shell, a mounting port is formed in the middle of the lower end of the shell, a circuit board is arranged at the position, located above the mounting port, in the shell, and sealant is arranged between the edge of the circuit board and the lower end face in the shell. A connector is arranged at the position, located in the installation opening, of the lower end of the circuit board and electrically connected with the circuit board, and a gap is reserved between the connector and the inner wall of the installation opening. The shell adopts the design that the metal welding ring is formed by injection molding of the insulating material, the insulating performance of the sensor is improved, the advantage of good sealing performance of the welding technology is reserved, and therefore the reliability of the sensor in the environment of high voltage impact and continuous voltage action is effectively enhanced.

A pressure sensor is provided. The pressure sensor includes a magnetic sensor element configured to generate a signal based on a magnetic field sensed by the magnetic sensor element; a microelectromechanical system (MEMS) structure including a membrane configured to move, depending on a pressure applied thereto, relative to the magnetic sensor element; and a field influencing element configured to modify the magnetic field based on a movement of the membrane, wherein the field influencing element is arranged on the membrane.

The invention provides an MEMS pressure sensor and a preparation method, and relates to the technical field of pressure sensors. The pressure sensor includes: a first base; the first chip is arranged on the first substrate, a piezoresistive cavity is formed in the first chip, and the first chip is used for detecting the corresponding pressure and first temperature of the first chip on the first substrate; the second chip is arranged on the first substrate, the second chip is used for detecting the corresponding second temperature of the second chip on the first substrate, and the second temperature is used for compensating the first temperature. Through the first chip and the second chip on the same second substrate, thermal gradient errors caused by temperature measurement position separation can be reduced, so that the second temperature measured by the second chip can truly reflect the temperature change of the position where the first chip is located; the first chip can utilize the second temperature to compensate a measurement error, namely the first temperature, which is caused by temperature change caused by the first chip or the environment, so that the accuracy of pressure measurement is improved, and accurate pressure is output.

The application relates to the technical field of micro-electro-mechanical system sensors, in particular to a MEMS pressure sensor which comprises a shell, a sensing diaphragm and an ASIC signal processing unit, the shell is internally provided with a sensing installation cavity and a signal processing cavity, an air inlet is formed in the lower end face of the shell, a detection channel and a buffer cavity are formed in the shell, and the buffer cavity is designed in a gradually expanding mode from bottom to top; pulse airflow first enters the detection channel through the air inlet to avoid direct and disordered airflow impact; then the airflow enters the buffer cavity, the gradually increasing cross-sectional area of the cavity body is utilized to gradually reduce airflow speed and pressure peak value, disperse pulse energy, convert the originally concentrated strong impact force into gentle pressure transmission, thereby reducing the abrasion and damage risk of the sensing diaphragm caused by frequently bearing intense pressure, helping to maintain the structural stability and sensing sensitivity of the sensing diaphragm, and guaranteeing the accuracy of the MEMS pressure sensor in pressure detection and the reliability of long-term work.

The invention relates to a metal eutectic bonding MEMS pressure sensor and a preparation method thereof, and belongs to the technical field of micro electro mechanical systems. The invention provides a metal eutectic bonding MEMS pressure sensor and a preparation method thereof. The sensor comprises a base, a lower bonding film, an upper bonding film, a substrate, an insulating film, a resistor strip and a thermistor film. The substrate, the insulating film, the resistor strip and the thermistor film form a core body; the silicon substrate manufactured through the MEMS technology is used as a core body, and the problem that the MEMS technology cannot be used for a metal elastomer in a traditional sputtering film type pressure sensor is solved. Aiming at the problems of an existing MEMS pressure sensor during assembly and system integration, low-stress connection between a core body and a metal base is realized by adopting a metal eutectic bonding technology, additional stress caused by difference of thermal expansion coefficients is effectively relieved, and by utilizing the characteristics of high strength and high stability of a metal eutectic bonding structure, the MEMS pressure sensor can be assembled and integrated with a system. The technical problem that the chip is easily damaged due to stress concentration in a gluing / welding mode is solved.

A MEMS pressure sensor includes a multiplexer passing a first-voltage or a second-voltage as output, an analog front-end (AFE) conditioning the output of the multiplexer to produce an ADC input, an analog-to-digital converter (ADC) digitizing the ADC input to produce an ADC output, a first Wheatstone-bridge sensitive to pressure and generating the first-voltage based upon the sensed pressure, a second Wheatstone-bridge sensitive to temperature generating the second-voltage based upon the sensed temperature, a voltage regulator using the first Wheatstone-bridge or the second Wheatstone-bridge in a feedback resistive-divider to generate a regulated-voltage, and control circuitry causing the voltage regulator to use the first Wheatstone-bridge during a pressure sensing period, and causing the voltage regulator to use the second Wheatstone-bridge during a temperature sensing period. The AFE and ADC are powered by the regulated-voltage, and the AFE and ADC use a feedback-voltage generated by the feedback resistive-divider as a reference-voltage.

Microelectromechanical system (MEMS) packages and methods of making thereof. A MEMS package includes at least one MEMS device disposed on a base substrate and a lid disposed on the base substrate. The lid is configured to enclose the at least one MEMS device. The lid includes a body portion configured to be coupled to the base substrate, a ceiling portion and a membrane. The ceiling portion, the body portion and the ceiling portion form a cavity in which the at least one MEMS device is enclosed. The membrane is configured to be in contact with the ceiling portion. The membrane is formed from a filtering fabric and is configured to substantially block one or more of liquids and contaminants from passing into the cavity.

The invention discloses a wafer self-adaptive grabbing system and method based on dynamic force feedback, and belongs to the technical field of semiconductor material processing and carrying. According to the system, an edge-lower support fusion type clamping jaw structure is adopted, a micro MEMS pressure sensor array is integrated, and sub-Newton level force control precision is achieved through a double-closed-loop PID control algorithm. The system comprises a miniature force sensor integration module, a dynamic force feedback control module and an edge-lower support fusion type clamping jaw structure, and can effectively solve the problems of stress concentration, temperature deformation and the like in the ultrathin wafer carrying process. The control method disclosed by the invention is combined with a working condition self-adaptive adjustment strategy, supports modes of sensitive edge protection, pressure balance, high-speed stability and the like, can switch working modes in real time according to wafer states and environmental conditions, dynamically adjusts operation parameters, and provides a solution for precise carrying of third-generation semiconductor ultrathin materials.

The application provides a MEMS pressure sensor and a preparation method and an electronic device thereof, and the method comprises the following steps: providing a first substrate and a second substrate, the first substrate comprises a first base layer, a first insulating layer and a first sensitive film layer, the first sensitive film layer is provided with a first pressure-sensitive resistor, the second substrate comprises a second base layer, a second insulating layer and a second sensitive film layer, and a cavity is formed in the second sensitive film layer; the second substrate is combined with the first substrate; the second substrate is subjected to a thinning treatment; a second pressure-sensitive resistor is formed in the second sensitive film layer; and the first substrate is etched to form a back cavity and expose the first sensitive film layer. The method integrates sensitive film layers with different ranges into a single chip, reduces the production cost, and promotes the application of a multi-range MEMS pressure sensor.

The application discloses a temperature-pressure multiple correction system based on a MEMS pressure sensor and relates to the technical field of temperature-pressure correction.The technical problem that the temperature-pressure correction deviates in the prior art because of the incapability of combination and analysis is solved.The temperature-pressure influence on the MEMS pressure sensor is analyzed, and whether the temperature-pressure value influence is normal when the surrounding environment of the MEMS pressure sensor changes is judged.The temperature-pressure controllability of a monitoring object is analyzed, and whether the temperature-pressure controllability during the operation of the monitoring object meets the actual demand is judged, so that the monitoring accuracy of the monitoring object is ensured, and the temperature-pressure correction of the monitoring object is reasonably supervised and controlled.The temperature-pressure influence on the monitoring object and the control efficiency are combined and analyzed, and whether the temperature-pressure control or the temperature-pressure influence monitoring of the monitoring object is accurate is judged, so that the temperature-pressure control or the temperature-pressure influence abnormality under multiple influence conditions is avoided, the temperature-pressure correction deviates, and the temperature-pressure correction accuracy of the monitoring object is reduced.

The invention discloses an MEMS pressure sensor pressure sensing diaphragm evaluation method and device and a storage medium, and belongs to the technical field of sensors. According to the evaluation method disclosed by the invention, the maximum stress calculation model of the diaphragm and the maximum deformation calculation model of the diaphragm are established, the evaluation method for the pressure sensing diaphragm of the pressure sensor when the measurement range is greater than 100MPa is designed, and the calculation results of the maximum stress calculation model and the maximum deformation calculation model are compared with the qualification criterion, so that the evaluation accuracy of the pressure sensing diaphragm of the pressure sensor is improved. Checking whether the selection parameters of the diaphragm meet the pressure-resistant requirement or not; the evaluation method can accurately guide the design of the sensitive diaphragm of the pressure sensor with the measuring range exceeding 100 MPa, realizes the preparation of the pressure sensor with the measuring range exceeding 100 MPa, and has a wide application prospect.

The present invention discloses a MEMS pressure sensor and a method for manufacturing the same. The MEMS pressure sensor comprises: four strip-shaped protrusions arranged on a first plane, each of which includes a heavily P-type doped layer; a plurality of electrodes, each of which is used to connect the strip-shaped protrusions to input and output electrical signals, and each of the electrodes and the strip-shaped protrusions forms a Wheatstone bridge; and a strained film layer disposed between a cavity and the Wheatstone bridge. This structure improves the sensitivity and stability of the pressure sensor while reducing its size.

The application discloses a pressure sensor system, which mainly comprises a MEMS pressure sensor module and a connector member. The MEMS pressure sensor module is mainly composed of a MEMS pressure sensor chip and a signal conditioning chip on a ceramic substrate, and a complete through hole is arranged below the ceramic substrate, the MEMS pressure sensor chip is communicated with the hole, the connector member provides pressure for the MEMS pressure sensor module through the through hole of the ceramic substrate, and the output signal of the MEMS pressure sensor module is filtered and processed through a single-chip microcomputer, so that the performance of the pressure sensor system is improved. The ceramic substrate and the protective cover of the MEMS pressure sensor module improve the mechanical strength and insulation performance compared with traditional pressure sensors, and the pressure-sensitive element and the test circuit are combined into a module, so that the overall size of the system is reduced, and the reliability of the system is improved.