168 results about "Mems pressure sensor" patented technology

The invention relates to the field of pressure sensors, in particular to a pressure sensor and a processing method, and a chip comprises a silicon substrate, a silicon dioxide dielectric layer, a device layer, a metal electrode and packaging glass. The device layer comprises a silicon carbide single crystal device layer and a silicon device layer; the silicon carbide single crystal device layer is arranged on the silicon device layer; the silicon device layer, the silicon dioxide dielectric layer and the silicon substrate are connected in sequence; the device layer is etched to form a sensitive resistor device layer, an annular sealing region and a micro-channel; the sensitive resistance device layer is isolated from the annular sealing area through the micro-channel; the device layer, the silicon dioxide dielectric layer and the silicon substrate are etched to form a cross beam etching area; the silicon substrate is etched to form a silicon pressure cavity and a beam film; the metal electrode is arranged on the top of the device layer; and the packaging glass anode is bonded at the top of the device layer or the bottom of the silicon substrate so as to solve the problems of low high temperature resistance and low sensitivity of the MEMS pressure sensor.

The invention provides a manufacturing method of an MEMS pressure sensor cavity, and the method comprises the steps: providing a wafer which comprises a chip region and a non-chip region which are formed on a substrate, and the chip region comprises a pressure device formed on the substrate; the manufacturing method of the cavity comprises the steps that S1, a plurality of monitoring areas are formed on a non-chip area on the front face of a wafer, each monitoring area comprises a preset position, a plurality of grooves with preset depths are formed in the vertex of the preset position, and specific materials are arranged at the bottoms in the grooves; s2, etching at the preset position and the corresponding position, mapped to the back surface of the wafer, of the pressure device through a wet etching process to form a cavity, when etching liquid of the wet etching process is in contact with the specific material, etching is stopped, at the moment, the thin film arranged above the cavity is a sensitive film, and the sensitive film is arranged on the back surface of the wafer; the thickness of the sensitive film is the same as the preset depth. According to the invention, the cost is low, and the etching depth of the cavity can be accurately controlled.

The invention provides an MEMS pressure sensor and a manufacturing method thereof, and an electronic device, and the method comprises the steps: providing a first substrate, forming at least two first pressure structures on the surface of the first substrate, each first pressure structure comprises a first electrode layer, a first sacrificial layer, a first supporting layer, a second electrode layer, a second supporting layer, and a first cavity, and a first release hole; a second substrate is provided, at least two second pressure structures are formed on the surface of the second substrate, and each second pressure structure comprises a third electrode layer, a second sacrificial layer and a second cavity; bonding the second supporting layer with the second sacrificial layer; the second substrate is removed to expose the third electrode layer, the third electrode layer and the second electrode layer form a variable capacitance structure, the second electrode layer and the first electrode layer form a reference capacitance structure, and the two variable capacitance structures and the two reference capacitance structures jointly form a Wheatstone bridge. According to the scheme, the measurement precision is improved, and the device performance is further improved.

The invention provides an MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, forming a first pressure structure on the first substrate, and forming a second pressure structure on the second substrate; bonding the first pressure structure and the second pressure structure; the first substrate is removed, the first pressure structure and the second pressure structure jointly form a third pressure structure, the third pressure structure comprises a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a fifth electrode layer which are arranged at intervals from top to bottom, and a dielectric layer is formed between every two adjacent electrode layers; and cavities penetrating through the dielectric layers are formed in the dielectric layers. According to the scheme, the multiple electrode layers arranged from bottom to top are formed, the multiple electrode layers form the first capacitor, the second capacitor, the third capacitor and the fourth capacitor respectively, then the Wheatstone bridge is formed jointly, the measurement precision of the MEMS pressure sensor is improved, meanwhile, the plane size of the MEMS pressure sensor is reduced, and the integration level of the device is improved.

The invention discloses a test system applied to performance testing of a high-pressure cold helium solenoid valve, and relates to the field of low-temperature fluid engineering. According to a method, a multi-dimensional radial pressure difference sampling point is arranged in a cold helium channel of the solenoid valve, and a high-frequency sampling MEMS pressure sensor and a speed inversion algorithm are combined; the system can calculate the velocity component V (x, r, t) and the rotation delta * V (x, r, t) of the radial r position of the valve body at the x position in the cold helium flowing direction at the t moment in real time, and construct a local disturbance spectrum energy density function Md based on the disturbance weighting function N (x, r) of the radial r position of the valve body at the x position in the cold helium flowing direction. The method not only breaks through the technical limitation that only the total flow velocity of cold helium is monitored in the prior art, but also can realize real-time discrimination of the disturbance level by constructing the disturbance interval threshold, provides a reliable basis for subsequent adjustment decision, and effectively improves the early sensing ability of the test system to local flow state abnormity.

The invention belongs to the field of MEMS sensors, and discloses a high-temperature-resistant MEMS pressure sensor chip and a packaging structure thereof. The chip is provided with an SOI substrate, an AlN layer and a SiO2 layer from bottom to top, a plurality of P-type piezoresistors are arranged on the uppermost layer of the SOI substrate and are symmetrically distributed at the stress concentration position of the edge of the elastic diaphragm; a channel which continuously penetrates through the AlN layer and the SiO2 layer is arranged above the P-type piezoresistor; a metal Pad is arranged in the channel; the upper end of the metal Pad is located on the uppermost layer of the high-temperature-resistant MEMS pressure sensor chip, and the lower end of the metal Pad is in contact with the P-type piezoresistor. According to the invention, the relatively thick buried oxide layer can resist a high-temperature severe environment, and an AlN heat dissipation material with a high heat conductivity coefficient is deposited, so that rapid heat dissipation at a high temperature is ensured; and meanwhile, the stability and the reliability of the sensor are improved by adopting leadless packaging, and the packaging density is further optimized.

A package includes a substrate having a first surface and an opposing second surface, a first cavity adjacent to the first surface of the substrate within the package, and a second cavity adjacent to the second surface of the substrate within the package, wherein the second cavity includes a fluid opening for allowing a fluid to enter the second cavity; a through hole in the substrate providing fluid communication between the first and second cavities; a MEMS sound transducer disposed in one of the first cavity or the second cavity; a MEMS pressure sensor disposed in the other one of the first cavity or the second cavity; and a discrete transfer block arranged on the substrate and configured to provide an electric path between the package pad and the MEMS sound transducer and the MEMS pressure sensor, wherein the transfer block is a discrete component separate from the substrate.

The invention relates to the technical field of pressure sensors, and discloses a piezoresistive multi-range MEMS pressure sensor and a processing method thereof. The piezoresistive multi-range MEMS pressure sensor comprises: a pressed diaphragm; the mass blocks comprise a central mass block and a fixed mass block; the insulating layer is clamped between the pressed diaphragm and the mass block; the piezoresistor is arranged on one side, deviating from the mass block, of the pressed diaphragm; the at least two supporting frames are located in the pressure groove, each supporting frame surrounds the center mass block and is spaced from the center mass block, the supporting frame adjacent to the center mass block is connected with the center mass block through a first connecting beam, and the supporting frame adjacent to the fixed mass block is connected with the fixed mass block through a second connecting beam; every two adjacent supporting frames are connected through a third connecting beam. The piezoresistive multi-range MEMS pressure sensor disclosed by the invention is simple in structure and easy to process, and not only realizes multi-range acting force detection, but also realizes micro-range high overload measurement.

The utility model discloses a novel capacitive MEMS pressure sensor, which comprises a sensitive structure layer, a bonding layer and a bottom plate layer which are sequentially arranged from top to bottom, and a closed vacuum cavity is defined by the sensitive structure layer, the middle part of the bottom plate layer and the bonding layer; the sensitive structure layer comprises a sensitive layer frame and a sensitive layer capacitance plate, and the bottom plate layer comprises a bottom layer outer frame and a bottom layer capacitance plate; the middle parts of the sensitive layer frame and the bottom layer outer frame are correspondingly provided with a sensitive layer capacitance plate and a bottom layer capacitance plate respectively; the peripheral side of the sensitive layer capacitance plate is connected with the sensitive layer frame through a sensitive layer elastic film; a capacitance gap located in the vacuum cavity is formed between the sensitive layer capacitance plate and the bottom layer capacitance plate. Deformation under the action of external pressure mainly occurs at the elastic thin film, the deformation quantity of the sensitive layer capacitance polar plate is small, the linearity between the capacitance value variation and the air pressure or pressure variation is effectively improved, and good practicability is achieved.

The invention discloses a thermocompression resistance PT symmetrical MEMS pressure sensor, which comprises two resonators with identical structures, and the two resonators are connected through a group of coupling spring beams. Each resonator comprises four anchor areas connected with the thin film substrate, narrow beams which are connected with the four anchor areas and have a piezoresistive effect, and a mass block connected with the four narrow beams, and the four anchor areas are symmetrically distributed on the two sides of the mass block. For one of the resonators, a current path is formed through connection of a constant current source in the anchor section on the same side of the mass block. Under the action of a constant current source, hot resistance pressing feedback is generated at narrow beams of the resonators, so that the two coupled resonators form a PT symmetric system, and the PT symmetric resonators are initially arranged at an Exception Point (EP) point. When pressure acts on the lower surface of the substrate, the substrate generates strain, the position of the anchor area is driven to change, the rigidity of the resonator is changed, a PT symmetric system deviates from an EP point, the system eigenfrequency is split and shows pull-ratio oscillation, and the frequency splitting amount depends on the pressure borne by the substrate. Because the EP point has a large response to tiny disturbance, the thermal pressure resistance PT symmetric MEMS pressure sensor can realize accurate measurement of weak pressure change, and has the advantages of high sensitivity and simple manufacturing process.

The invention discloses a pressure sensor design method and preparation method based on topological optimization, and belongs to the technical field of MEMS piezoresistive pressure sensing, and the method comprises the steps: constructing a pressure film structure layer, and defining a topological region of a pressure film structure material; constructing a power exponential penalty relationship between the relative density and the elastic modulus of the pressure film structure material, and carrying out topological optimization by adopting an index weighted objective function; the method comprises the following steps: firstly, calculating a stiffness matrix of each unit grid, and assembling the stiffness matrixes of the unit grids to obtain a total stiffness matrix of the structure; calculating node displacement of each unit grid according to the total stiffness matrix; solving a target function value of the current iteration point; constructing a moving approximation subproblem of the target function to approximate an original problem, and updating upper and lower boundaries of a design variable according to an approximation value; according to the method, the MEMS pressure sensor has higher performance, and the influence of subjective experience of engineers is avoided.

The invention relates to the technical field of micro-electro-mechanical system sensors, in particular to an MEMS pressure sensor which comprises a shell, an induction diaphragm and an ASIC signal processing unit, an induction mounting cavity and a signal processing cavity are formed in the shell, an air inlet is formed in the lower end face of the shell, a detection channel and a buffer cavity are formed in the shell, and the detection channel is communicated with the signal processing cavity. The buffer cavity is designed to be gradually expanded from bottom to top; pulse airflow firstly enters the detection channel through the air inlet, and direct disordered impact of the airflow is avoided; then the airflow enters the buffer cavity, the airflow speed and the pressure peak value are gradually reduced and the pulse energy is dispersed by utilizing the characteristic that the cross sectional area of the cavity is gradually increased, and the originally concentrated strong impact force is converted into gentle pressure transmission, so that the abrasion and damage risks caused by the fact that the sensing diaphragm frequently bears the violent pressure are reduced; the structure stability and the sensing sensitivity of the sensing diaphragm can be maintained, and the accuracy of pressure detection and the reliability of long-term work of the MEMS pressure sensor can be guaranteed.

The utility model provides a novel MEMS pressure sensor packaging structure which is good in heat dissipation performance, effectively prevents heat from being accumulated in a chip, and ensures the working stability of the chip. The ASIC chip and the MEMS chip are sequentially installed on the PCB substrate from bottom to top, a base is arranged between the MEMS chip and the PCB substrate, a profiling installation groove matched with the MEMS chip is formed in the top of the base, a heat dissipation cavity is formed in the bottom of the base, and heat dissipation holes communicated with the heat dissipation cavity are formed in the PCB substrate.

The invention belongs to the technical field of integrated circuit packaging, and particularly relates to an integrated corrosion-resistant MEMS pressure sensor and a manufacturing method thereof. Comprising a PCB substrate, and an MEMS chip and an ASIC chip are mounted on the PCB substrate. The box dam forms double chambers for physical isolation; the box dam is bonded to the top of the PCB substrate through corrosion-resistant glue, the MEMS chip and the ASIC chip are separated through the double cavities, and the cavities where the MEMS chip is mounted are filled with corrosion-resistant protective gel so as to completely cover the MEMS chip; and the metal cover plate is bonded to the top of the box dam through corrosion-resistant glue, and a through hole is formed in one side of the top of the metal cover plate. According to the MEMS pressure sensor, the problem of miniaturization and standardization of the existing MEMS pressure sensor is solved, and the corrosion resistance requirement is met; the manufacturing process is suitable for batch high-precision machining, the product yield is improved, and the product cost is reduced.

The present invention discloses a temperature self-compensating small-range MEMS sensor and a preparation method thereof. The sensor includes a packaging shell and a pressure-sensitive chip. The pressure-sensitive chip includes a first substrate, a second substrate, a third substrate, a fourth substrate, a fifth substrate and a sixth substrate from top to bottom; the first substrate is a passivation protection layer, the second substrate is a metal layer, the third substrate includes a peninsula-arc edge beam structure and a piezoresistor; the fourth substrate includes a pressure-sensitive membrane structure, the fifth substrate includes a fixed structure, and the sixth substrate includes a glass base; the metal layer is provided with metal interconnection leads, and the piezoresistor is arranged in the peninsula-arc edge beam structure; the metal interconnection leads electrically conduct the ohmic contact area of ​​the piezoresistor to form a Wheatstone bridge form piezoresistive circuit. The present invention realizes the over-range protection function of the sensor, solves the current situation that the sensitivity and linearity of the small-range MEMS pressure sensor cannot be achieved at the same time, and realizes the self-compensation of temperature drift.

The utility model discloses a pressure sensor MEMS chip calibration and test tool, which comprises a chip tool module and a test circuit board corresponding to the chip tool module, and is characterized in that the chip tool module comprises a chip slot plate provided with a plurality of chip slots; wherein ventilation pipelines corresponding to the chip slots are arranged in the chip slot plate; wherein a probe is arranged between the test circuit board and each chip slot; the chip tool module can adjust the size of the positioning groove so as to be suitable for MEMS chips of different specifications. The integrated equipment integrating MEMS pressure sensor testing and high and low temperature calibration is developed by utilizing modular design in cooperation with an automatic testing and data processing technology, batch processing can be carried out, and great attraction is achieved for the industry needing a large amount of necessary standardization and repeated testing.

The invention provides a SiC wafer processing method, an MEMS pressure sensor and a preparation method thereof, and relates to the technical field of advanced manufacturing. The invention provides a SiC wafer processing method, which comprises the following steps of sequentially extending an n-type buffer layer, a p-type epitaxial layer and an n-type epitaxial layer on the surface of an original SiC wafer to form a SiC wafer with the n-type buffer layer, the p-type epitaxial layer and the n-type epitaxial layer laminated on the surface; and after a Si wafer and the n-type epitaxial layer are temporarily bonded, the other surface of the original SiC wafer is ground, thinned and polished, and the processed SiC wafer is obtained. According to the method, the original SiC wafer and the Si wafer are ground and thinned after being bonded, so that deep etching processing of the SiC wafer is avoided, and the production cost and difficulty of the SiC wafer are remarkably reduced; and the morphology uniformity of the surface of the SiC wafer is improved through polishing.

The invention provides a pressure and temperature cooperative measurement method for a piezoresistive MEMS pressure sensor, and the method comprises the following steps: S1, switching a resistor connection mode of an MEMS header of the piezoresistive MEMS pressure sensor through an MOS switch, and obtaining pressure and temperature signals in a time-sharing manner; s2, eliminating the influence of pressure on temperature measurement by using the equivalent resistance Req; and S3, based on the pre-stored temperature-pressure characteristic curve, compensating the temperature drift error in real time through a digital algorithm. According to the invention, cooperative measurement of pressure and temperature is realized by using a piezoresistive MEMS sensor gauge head piezoresistor, and calibration and compensation of temperature and pressure are realized through a digital algorithm; the design difficulty and process requirements of the piezoresistive temperature and pressure integrated sensor chip on the piezoresistive MEMS sensor header and the signal conditioning circuit are reduced, the measurement precision of temperature and pressure is improved, and the development and manufacturing cost of the piezoresistive temperature and pressure integrated sensor chip is reduced.

The invention discloses an acceleration test method for an MEMS pressure sensor, which comprises the following steps of: acquiring an MEMS pressure sensor sample which comprises a deformable membrane structure; a stress application structure is arranged on the membrane structure, and the stress application structure is a built-in electrode or an external electrode plate; applying voltage to the stress application structure, and enabling the membrane structure to deform through electrostatic force, which is equivalent to environment pressure input; installing the MEMS pressure sensor in a multi-environmental stress test device, and synchronously loading at least one environmental stress of temperature, humidity, vibration or impact; and monitoring the performance parameter change of the MEMS pressure sensor, and evaluating the reliability of the MEMS pressure sensor. By designing the stress application structure, the electrostatic force generated by loading the direct-current voltage simulates the pressure film structure to realize the input of the environmental pressure, additional equipment is not needed, and the test method is convenient and easy to implement.

The invention discloses a magnetorheological polishing liquid supply system and method based on a jet technology, and relates to the technical field of magnetorheological polishing, the magnetorheological polishing liquid supply system comprises a liquid storage and conveying module, the liquid storage and conveying module comprises a liquid storage device, a conveying device and a pulsation attenuation module, and the magnetorheological pulsation attenuation module is provided with a magnetorheological pulsation attenuator which is connected in series between an outlet of a servo variable pump and a conveying pipeline; the spraying execution module comprises a nozzle and a position adjusting assembly; the multi-dimensional detection module comprises a visual sensor, a Coriolis flow meter and an MEMS pressure sensor; the modeling and predicting module is used for calculating pipeline resistance according to the relative position of the nozzle and the workpiece and predicting pulsation by decomposing a pump pulsation rule through Fourier transform; and the dynamic regulation and control module is used for controlling the attenuator to counteract the pulsation according to the pulsation prediction output reverse current, and regulating the displacement and the rotating speed of the pump in real time through a fuzzy PID algorithm in combination with preset target flow and pressure. The problem that in the prior art, the injection parameter control precision is limited is solved, and high-precision regulation and control are achieved.

The invention belongs to the technical field of MEMS (Micro Electro Mechanical System) manufacturing, and particularly relates to a deep corrosion method for a back cavity of an MEMS pressure sensor. Comprising the following steps: constructing a'preset reference-gradient rough corrosion-real-time correction-precise fine corrosion 'closed-loop control system: firstly, establishing a precise temperature-corrosion rate corresponding relation through a QC wafer experiment; according to the target depth of the back cavity, multiple rounds of gradient rate coarse corrosion processes are planned, the corrosion depths of all rounds are distributed according to the proportion from large to small, and the corrosion rate is decreased progressively along with the rounds through temperature regulation and control to rapidly approach 80%-95% of the target depth; the depth is detected immediately after each round of corrosion, and targeted correction of'parameter fine adjustment 'or'deviation compensation' is realized based on a double-threshold criterion; and finally, turning to multiple rounds of low-rate fine corrosion, continuing a gradient rate and a real-time correction strategy, and precisely closing a loop to a target depth. According to the invention, submicron level control of the depth of the back cavity is realized, the process stability and adaptability are high, and the performance consistency and the large-scale production yield of the MEMS pressure sensor are effectively improved.

The invention discloses a function test system, method and device for an MEMS pressure sensor, and the system comprises a production test device which comprises a production test sealing chamber; the production test input pneumatic port is used for being pneumatically connected with a target pressure instrument for pressure input; the production test detection pneumatic port is used for being pneumatically connected with an MEMS pressure sensor for pressure detection; the function test equipment is used for collecting the detected pressure data from the MEMS pressure sensor and carrying out function test according to the pressure data to obtain a function test result; the production test microcontroller is used for triggering the function test equipment to synchronously collect pressure data with the pressure input; and the data analysis module is used for acquiring and associating the verification result and the function test result, so that the test synchronism and the data relevance are optimized, the test result has a traceable measurement basis, the fault traceability and problem positioning efficiency is improved, and the test data credibility is improved.

The present invention relates to a micro differential pressure MEMS pressure sensor pressure sensitive chip and a preparation method thereof, belonging to the field of sensor technology. The pressure sensor pressure sensitive chip includes a five-layer structure, namely, layer one to layer five; the structural features of the "island-film-beam coupling" type micro differential pressure sensor pressure sensitive chip proposed by the present invention include a porous island structure that suppresses deflection deformation, an octagonal arc-shaped pressure-sensitive film structure, a stress-concentrating cross-shaped beam structure, and a highly symmetrical piezoresistive circuit. The pressure-sensitive structure is axisymmetric along the x and y axes of its own center, so that when subjected to pressure in the z-axis direction, the stress on the pressure-sensitive structure is induced to be concentrated in the intersection area between the cross-beam structure above the pressure-sensitive film and the porous mass block island structure (and the supporting frame structure).

This invention belongs to the field of pressure sensors, specifically relating to an oil-filled core for a MEMS pressure sensor suitable for high-pressure, small-molecule media. It comprises a pressure ring, a corrugated diaphragm, a core base, sealing steel balls, and components such as silicone oil, a ceramic seat, a pressure chip, and leads located within a sealed cavity formed by the corrugated diaphragm and the core base. This invention addresses the shortcomings of traditional oil-filled cores for MEMS pressure sensors by improving the design in multiple structural and manufacturing aspects, solving problems such as small-molecule media infiltration, lead breakage failure, and high-pressure connection sealing. It is particularly suitable for accurate pressure measurement of high-pressure, small-molecule media.

The invention discloses an on-line radiation monitoring and power-off protection MEMS pressure sensor and a preparation method thereof. The sensor can synchronously realize pressure measurement, radiation monitoring and power-off protection functions on a single chip. On the basis of realizing high-precision pressure measurement, the sensor is provided with a platinum film resistor in a specific area and is coated with an electromagnetic wave absorbing material to form a radiation sensing unit, so that the on-line monitoring on the electromagnetic radiation intensity of the environment is realized. The protection circuit closely integrated with the sensor continuously analyzes radiation dose signals, and once it is judged that the dose exceeds a preset safety threshold value, a control signal is generated, a power supply access of the pressure measurement unit is actively cut off, the pressure measurement unit is made to enter a dormant state, and therefore irreversible performance degradation or permanent damage is avoided. According to the invention, the conversion from passive bearing to active protection during the working of the sensor is realized, and the reliability of long-term working in an extreme electromagnetic environment is obviously improved.

This invention relates to the field of power system safety assurance technology, specifically providing a circuit breaker with operation monitoring function and its monitoring method. The circuit breaker includes: a circuit breaker spring, a base housing fixed to one end of the circuit breaker spring, a deformation assembly, a transmission assembly, and a detection assembly within the base housing. The deformation assembly visualizes the minute deformation generated by the spring and generates relative displacement. The transmission assembly uses a lever amplification method to transmit the displacement to the detection assembly. The detection assembly includes a piston and a MEMS pressure sensor. One end of the piston is connected to the transmission assembly, and the other end is movably sealed within a closed space, where the MEMS pressure sensor is located. This invention effectively converts the minute deformation of the circuit breaker spring into changes in air pressure, introducing a MEMS pressure sensor to achieve high-precision monitoring. It possesses strong anti-interference capabilities, meets the requirements of low false alarms and zero calibration, reduces operation and maintenance costs, and offers high monitoring accuracy and reliability.

The invention relates to a combined acoustic transducer and pressure sensor package. A combined acoustic transducer and pressure sensor package (100) is provided that includes a planar substrate (110) and a first cover (120) attached to a first substrate surface (111) with a first cavity (130) defined between the first cover (120) and the first substrate surface (111). A second cover (220) is attached to an opposing second substrate surface (112), where a second cavity (230) is defined between the second cover (220) and the second substrate surface (112), and where the second cover (220) comprises a fluid opening (240) for allowing fluid to enter the second cavity (230). A MEMS acoustic transducer (150) and a MEMS pressure sensor (250) are provided, each disposed inside opposing ones of the first and second cavities (130, 230). A transfer block for providing an electrical path between the package pad and the MEMS acoustic transducer and the MEMS pressure sensor is provided as a discrete component separate from the substrate.

The invention relates to an MEMS pressure sensor and a preparation method thereof in the technical field of micromachining. The MEMS pressure sensor comprises a substrate, a silicon wafer cup-shaped structure layer, a superlattice structure layer, a phosphorus-doped polycrystalline silicon layer, a metal layer, a top silicon dioxide insulation layer and a top silicon nitride protection layer which are sequentially arranged from bottom to top. A cavity structure is formed between the surface of one side, facing the substrate, of the silicon wafer cup-shaped structure layer and the substrate, and an ion implantation block doping layer is formed on the surface layer of one side, facing the superlattice structure layer, of the silicon wafer cup-shaped structure layer; the superlattice structure layer comprises a plurality of composite layers which are sequentially stacked, and each composite layer comprises a silicon dioxide insulation layer, a magnesium oxide buffer layer and a silicon nitride protection layer which are sequentially arranged from the silicon wafer cup-shaped structure layer to the phosphorus-doped polycrystalline silicon layer. The reliability, the environmental adaptability and the signal quality of the MEMS pressure sensor can be remarkably improved, and the MEMS pressure sensor can be better suitable for extreme working conditions or high-precision detection requirement scenes.

The invention provides a touch sensing device based on a micro electro mechanical system and a robot, and the touch sensing device comprises a housing which is provided with a recessed part; the circuit board is arranged in the concave part of the shell, and the shape of the circuit board is matched with that of the concave part; the plurality of MEMS pressure sensors are arrayed on the circuit board; and the flexible material is filled in the concave part and the pressure sensing hole of the MEMS pressure sensor, and covers the circuit board and the MEMS pressure sensor. According to the touch sensing device based on the micro electro mechanical system and the robot provided by the invention, precise response can be made to fine change of force.

The utility model discloses a packaging tool for a high-performance MEMS pressure sensor chip, which comprises a base, a tube socket fixing assembly and a vertical movable assembly, the base is used for bearing the tube socket fixing assembly and the vertical movable assembly, the tube socket fixing assembly is used for fixing a packaging tube socket, the vertical movable assembly can move horizontally and vertically relative to the base, and the tube socket fixing assembly is used for fixing the packaging tube socket. Therefore, the flattening operation of the MEMS pressure sensor chip in the packaging tube socket is realized. According to the packaging tool provided by the utility model, the height of the chip chamber wall is matched with the structures of the flattening column and the horizontal arm, so that the thickness of the fixing glue is accurately controlled, and the consistency of the thickness of the fixing glue is ensured; fixing glue is prevented from diffusing to the vent holes through the anti-overflow columns, and the vent holes are prevented from being blocked; the tube socket cavity can be matched with products with different sizes or shapes through the lining, so that the packaging efficiency is improved; an anti-static gasket on the bottom surface of the flattening column avoids mechanical and static damage to the chip; positioning and pressing are achieved through horizontal sliding and vertical pressing, the operation difficulty is reduced, and the packaging yield is improved.