59 results about "Mems pressure sensor" patented technology

The invention provides an MEMS pressure sensor and a manufacturing method thereof, and an electronic device, and the method comprises the steps: providing a first substrate, forming at least two first pressure structures on the surface of the first substrate, each first pressure structure comprises a first electrode layer, a first sacrificial layer, a first supporting layer, a second electrode layer, a second supporting layer, and a first cavity, and a first release hole; a second substrate is provided, at least two second pressure structures are formed on the surface of the second substrate, and each second pressure structure comprises a third electrode layer, a second sacrificial layer and a second cavity; bonding the second supporting layer with the second sacrificial layer; the second substrate is removed to expose the third electrode layer, the third electrode layer and the second electrode layer form a variable capacitance structure, the second electrode layer and the first electrode layer form a reference capacitance structure, and the two variable capacitance structures and the two reference capacitance structures jointly form a Wheatstone bridge. According to the scheme, the measurement precision is improved, and the device performance is further improved.

The invention provides an MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, forming a first pressure structure on the first substrate, and forming a second pressure structure on the second substrate; bonding the first pressure structure and the second pressure structure; the first substrate is removed, the first pressure structure and the second pressure structure jointly form a third pressure structure, the third pressure structure comprises a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a fifth electrode layer which are arranged at intervals from top to bottom, and a dielectric layer is formed between every two adjacent electrode layers; and cavities penetrating through the dielectric layers are formed in the dielectric layers. According to the scheme, the multiple electrode layers arranged from bottom to top are formed, the multiple electrode layers form the first capacitor, the second capacitor, the third capacitor and the fourth capacitor respectively, then the Wheatstone bridge is formed jointly, the measurement precision of the MEMS pressure sensor is improved, meanwhile, the plane size of the MEMS pressure sensor is reduced, and the integration level of the device is improved.

The invention discloses a magnetorheological polishing liquid supply system and method based on a jet technology, and relates to the technical field of magnetorheological polishing, the magnetorheological polishing liquid supply system comprises a liquid storage and conveying module, the liquid storage and conveying module comprises a liquid storage device, a conveying device and a pulsation attenuation module, and the magnetorheological pulsation attenuation module is provided with a magnetorheological pulsation attenuator which is connected in series between an outlet of a servo variable pump and a conveying pipeline; the spraying execution module comprises a nozzle and a position adjusting assembly; the multi-dimensional detection module comprises a visual sensor, a Coriolis flow meter and an MEMS pressure sensor; the modeling and predicting module is used for calculating pipeline resistance according to the relative position of the nozzle and the workpiece and predicting pulsation by decomposing a pump pulsation rule through Fourier transform; and the dynamic regulation and control module is used for controlling the attenuator to counteract the pulsation according to the pulsation prediction output reverse current, and regulating the displacement and the rotating speed of the pump in real time through a fuzzy PID algorithm in combination with preset target flow and pressure. The problem that in the prior art, the injection parameter control precision is limited is solved, and high-precision regulation and control are achieved.

The invention belongs to the technical field of MEMS (Micro Electro Mechanical System) manufacturing, and particularly relates to a deep corrosion method for a back cavity of an MEMS pressure sensor. Comprising the following steps: constructing a'preset reference-gradient rough corrosion-real-time correction-precise fine corrosion 'closed-loop control system: firstly, establishing a precise temperature-corrosion rate corresponding relation through a QC wafer experiment; according to the target depth of the back cavity, multiple rounds of gradient rate coarse corrosion processes are planned, the corrosion depths of all rounds are distributed according to the proportion from large to small, and the corrosion rate is decreased progressively along with the rounds through temperature regulation and control to rapidly approach 80%-95% of the target depth; the depth is detected immediately after each round of corrosion, and targeted correction of'parameter fine adjustment 'or'deviation compensation' is realized based on a double-threshold criterion; and finally, turning to multiple rounds of low-rate fine corrosion, continuing a gradient rate and a real-time correction strategy, and precisely closing a loop to a target depth. According to the invention, submicron level control of the depth of the back cavity is realized, the process stability and adaptability are high, and the performance consistency and the large-scale production yield of the MEMS pressure sensor are effectively improved.

The invention discloses a function test system, method and device for an MEMS pressure sensor, and the system comprises a production test device which comprises a production test sealing chamber; the production test input pneumatic port is used for being pneumatically connected with a target pressure instrument for pressure input; the production test detection pneumatic port is used for being pneumatically connected with an MEMS pressure sensor for pressure detection; the function test equipment is used for collecting the detected pressure data from the MEMS pressure sensor and carrying out function test according to the pressure data to obtain a function test result; the production test microcontroller is used for triggering the function test equipment to synchronously collect pressure data with the pressure input; and the data analysis module is used for acquiring and associating the verification result and the function test result, so that the test synchronism and the data relevance are optimized, the test result has a traceable measurement basis, the fault traceability and problem positioning efficiency is improved, and the test data credibility is improved.

This invention belongs to the field of pressure sensors, specifically relating to an oil-filled core for a MEMS pressure sensor suitable for high-pressure, small-molecule media. It comprises a pressure ring, a corrugated diaphragm, a core base, sealing steel balls, and components such as silicone oil, a ceramic seat, a pressure chip, and leads located within a sealed cavity formed by the corrugated diaphragm and the core base. This invention addresses the shortcomings of traditional oil-filled cores for MEMS pressure sensors by improving the design in multiple structural and manufacturing aspects, solving problems such as small-molecule media infiltration, lead breakage failure, and high-pressure connection sealing. It is particularly suitable for accurate pressure measurement of high-pressure, small-molecule media.

The invention discloses an on-line radiation monitoring and power-off protection MEMS pressure sensor and a preparation method thereof. The sensor can synchronously realize pressure measurement, radiation monitoring and power-off protection functions on a single chip. On the basis of realizing high-precision pressure measurement, the sensor is provided with a platinum film resistor in a specific area and is coated with an electromagnetic wave absorbing material to form a radiation sensing unit, so that the on-line monitoring on the electromagnetic radiation intensity of the environment is realized. The protection circuit closely integrated with the sensor continuously analyzes radiation dose signals, and once it is judged that the dose exceeds a preset safety threshold value, a control signal is generated, a power supply access of the pressure measurement unit is actively cut off, the pressure measurement unit is made to enter a dormant state, and therefore irreversible performance degradation or permanent damage is avoided. According to the invention, the conversion from passive bearing to active protection during the working of the sensor is realized, and the reliability of long-term working in an extreme electromagnetic environment is obviously improved.

The utility model discloses a packaging tool for a high-performance MEMS pressure sensor chip, which comprises a base, a tube socket fixing assembly and a vertical movable assembly, the base is used for bearing the tube socket fixing assembly and the vertical movable assembly, the tube socket fixing assembly is used for fixing a packaging tube socket, the vertical movable assembly can move horizontally and vertically relative to the base, and the tube socket fixing assembly is used for fixing the packaging tube socket. Therefore, the flattening operation of the MEMS pressure sensor chip in the packaging tube socket is realized. According to the packaging tool provided by the utility model, the height of the chip chamber wall is matched with the structures of the flattening column and the horizontal arm, so that the thickness of the fixing glue is accurately controlled, and the consistency of the thickness of the fixing glue is ensured; fixing glue is prevented from diffusing to the vent holes through the anti-overflow columns, and the vent holes are prevented from being blocked; the tube socket cavity can be matched with products with different sizes or shapes through the lining, so that the packaging efficiency is improved; an anti-static gasket on the bottom surface of the flattening column avoids mechanical and static damage to the chip; positioning and pressing are achieved through horizontal sliding and vertical pressing, the operation difficulty is reduced, and the packaging yield is improved.

The embodiment of the invention relates to a temperature compensation method and device and a readable storage medium, and the method comprises the steps: primary compensation: employing polynomial fitting to build a baseline model based on the original output values of a plurality of groups of MEMS pressure sensors and the surface temperature value of a lithium ion battery, and obtaining the primary compensation output values of the MEMS pressure sensors; dynamic compensation: pre-establishing a database for acquiring a relationship between an internal temperature value of the lithium ion battery and a temperature dynamic compensation coefficient of the MEMS pressure sensor, and calculating a dynamic compensation output value of the MEMS pressure sensor based on the primary compensation output value and the temperature dynamic compensation coefficient; feedback calibration: periodically acquiring the deviation between the measured value and the predicted value of the voltage polarization amplitude of the lithium ion battery, and automatically and reversely correcting the baseline model; according to the invention, the temperature error of the MEMS pressure sensor is dynamically compensated by constructing a multi-stage compensation system and voltage polarization amplitude characteristics.

The invention discloses an MEMS pressure sensor suitable for a new energy battery and a manufacturing method, and relates to the technical field of pressure sensors, the MEMS pressure sensor comprises a shell, a mounting port is formed in the middle of the lower end of the shell, a circuit board is arranged at the position, located above the mounting port, in the shell, and sealant is arranged between the edge of the circuit board and the lower end face in the shell. A connector is arranged at the position, located in the installation opening, of the lower end of the circuit board and electrically connected with the circuit board, and a gap is reserved between the connector and the inner wall of the installation opening. The shell adopts the design that the metal welding ring is formed by injection molding of the insulating material, the insulating performance of the sensor is improved, the advantage of good sealing performance of the welding technology is reserved, and therefore the reliability of the sensor in the environment of high voltage impact and continuous voltage action is effectively enhanced.

The invention relates to a metal eutectic bonding MEMS pressure sensor and a preparation method thereof, and belongs to the technical field of micro electro mechanical systems. The invention provides a metal eutectic bonding MEMS pressure sensor and a preparation method thereof. The sensor comprises a base, a lower bonding film, an upper bonding film, a substrate, an insulating film, a resistor strip and a thermistor film. The substrate, the insulating film, the resistor strip and the thermistor film form a core body; the silicon substrate manufactured through the MEMS technology is used as a core body, and the problem that the MEMS technology cannot be used for a metal elastomer in a traditional sputtering film type pressure sensor is solved. Aiming at the problems of an existing MEMS pressure sensor during assembly and system integration, low-stress connection between a core body and a metal base is realized by adopting a metal eutectic bonding technology, additional stress caused by difference of thermal expansion coefficients is effectively relieved, and by utilizing the characteristics of high strength and high stability of a metal eutectic bonding structure, the MEMS pressure sensor can be assembled and integrated with a system. The technical problem that the chip is easily damaged due to stress concentration in a gluing / welding mode is solved.

The invention discloses a wafer self-adaptive grabbing system and method based on dynamic force feedback, and belongs to the technical field of semiconductor material processing and carrying. According to the system, an edge-lower support fusion type clamping jaw structure is adopted, a micro MEMS pressure sensor array is integrated, and sub-Newton level force control precision is achieved through a double-closed-loop PID control algorithm. The system comprises a miniature force sensor integration module, a dynamic force feedback control module and an edge-lower support fusion type clamping jaw structure, and can effectively solve the problems of stress concentration, temperature deformation and the like in the ultrathin wafer carrying process. The control method disclosed by the invention is combined with a working condition self-adaptive adjustment strategy, supports modes of sensitive edge protection, pressure balance, high-speed stability and the like, can switch working modes in real time according to wafer states and environmental conditions, dynamically adjusts operation parameters, and provides a solution for precise carrying of third-generation semiconductor ultrathin materials.

The application discloses a temperature-pressure multiple correction system based on a MEMS pressure sensor and relates to the technical field of temperature-pressure correction.The technical problem that the temperature-pressure correction deviates in the prior art because of the incapability of combination and analysis is solved.The temperature-pressure influence on the MEMS pressure sensor is analyzed, and whether the temperature-pressure value influence is normal when the surrounding environment of the MEMS pressure sensor changes is judged.The temperature-pressure controllability of a monitoring object is analyzed, and whether the temperature-pressure controllability during the operation of the monitoring object meets the actual demand is judged, so that the monitoring accuracy of the monitoring object is ensured, and the temperature-pressure correction of the monitoring object is reasonably supervised and controlled.The temperature-pressure influence on the monitoring object and the control efficiency are combined and analyzed, and whether the temperature-pressure control or the temperature-pressure influence monitoring of the monitoring object is accurate is judged, so that the temperature-pressure control or the temperature-pressure influence abnormality under multiple influence conditions is avoided, the temperature-pressure correction deviates, and the temperature-pressure correction accuracy of the monitoring object is reduced.

The invention discloses an MEMS pressure sensor pressure sensing diaphragm evaluation method and device and a storage medium, and belongs to the technical field of sensors. According to the evaluation method disclosed by the invention, the maximum stress calculation model of the diaphragm and the maximum deformation calculation model of the diaphragm are established, the evaluation method for the pressure sensing diaphragm of the pressure sensor when the measurement range is greater than 100MPa is designed, and the calculation results of the maximum stress calculation model and the maximum deformation calculation model are compared with the qualification criterion, so that the evaluation accuracy of the pressure sensing diaphragm of the pressure sensor is improved. Checking whether the selection parameters of the diaphragm meet the pressure-resistant requirement or not; the evaluation method can accurately guide the design of the sensitive diaphragm of the pressure sensor with the measuring range exceeding 100 MPa, realizes the preparation of the pressure sensor with the measuring range exceeding 100 MPa, and has a wide application prospect.

The application discloses a pressure sensor system, which mainly comprises a MEMS pressure sensor module and a connector member. The MEMS pressure sensor module is mainly composed of a MEMS pressure sensor chip and a signal conditioning chip on a ceramic substrate, and a complete through hole is arranged below the ceramic substrate, the MEMS pressure sensor chip is communicated with the hole, the connector member provides pressure for the MEMS pressure sensor module through the through hole of the ceramic substrate, and the output signal of the MEMS pressure sensor module is filtered and processed through a single-chip microcomputer, so that the performance of the pressure sensor system is improved. The ceramic substrate and the protective cover of the MEMS pressure sensor module improve the mechanical strength and insulation performance compared with traditional pressure sensors, and the pressure-sensitive element and the test circuit are combined into a module, so that the overall size of the system is reduced, and the reliability of the system is improved.

Photoacoustic sensor, comprehensive: a layer stack with multiple wafer-bonded layers, wherein the layer stack comprises: a first wafer-bonded layer (2) with an optical MEMS emitter (4) integrated into the first layer (2), wherein the first layer (2) is made of a semiconductor material and wherein the optical MEMS emitter (4) has a movable structure and is integrated into the semiconductor material; a second wafer-bonded layer (6) stacked above the first layer (2) with a MEMS pressure sensor (8) and an optically transparent window (10), wherein the MEMS pressure sensor (8) and the optically transparent window (10) are arranged laterally offset from each other; and a third wafer-bonded layer (12) stacked above the second layer (6) with a cavity (14) for a reference gas (16), wherein the optical MEMS emitter (4) is designed to transmit optical radiation (26) along an optical path, wherein the optical path passes through the optically transparent window (10) and the cavity (14) for the reference gas (16), and wherein the MEMS pressure sensor (8) is located outside the path of the optical path.

The application belongs to the technical field of micro-electro-mechanical system (MEMS), and discloses a MEMS pressure sensor and a preparation method thereof, which comprises a micro-electro-mechanical chip, a fixed cover is slidably installed on the outer wall of the micro-electro-mechanical chip, a plurality of pins are fixedly arranged on the top of the two sides of the micro-electro-mechanical chip, a plurality of installation grooves are formed on the outer walls of the two sides of the fixed cover, and the same guide mechanism is arranged on the inner walls of the installation grooves. Through the guide mechanism, each pin is surrounded by two guide plates, so that each pin can be accurately positioned and separated, the misalignment problem in the installation process is effectively prevented, additional stability and accuracy are provided, the guide function of the guide plate enables the chip to be smoothly and correctly docked to the predetermined position on the mainboard, the installation accuracy and reliability are greatly improved, and the stability of the pin connection with the mainboard is enhanced.

The invention relates to an MEMS liquid flow velocity sensor based on differential pressure measurement and a preparation method thereof, the MEMS liquid flow velocity sensor based on differential pressure measurement comprises a base body which comprises a base body main body and a base body arm located at the top of the base body main body, and the side surface of the base body arm is provided with an opening; the flow channel is located in the base body, the first end of the flow channel is communicated with the opening, and the second end of the flow channel is provided with an MEMS pressure sensor. The MEMS liquid flow velocity sensor based on differential pressure measurement is small in overall size and can measure the flow velocity or flow in a small determined range.

The application discloses a MEMS pressure sensor chip and a preparation method thereof, and belongs to the technical field of pressure sensor chips. The sensor chip is provided with two separated double-metal layer structures of a metal wiring layer (a first metal layer) and a shielding metal layer (a second metal layer), realizes independent division and collaborative optimization of circuit connection function and electromagnetic shielding function, and the independent and complete shielding metal layer can effectively isolate external environmental electromagnetic interference, reduces the influence of the external environmental electromagnetic interference on sensitive sensing elements such as a pressure-sensitive resistor, and greatly improves the signal-to-noise ratio and working stability of the sensor. Meanwhile, the metal wiring layer can be focused on low-resistance characteristics and fine wiring design, the shielding metal layer can be focused on full-coverage layout and good ground performance optimization, independent regulation and control of the two is realized, mutual interference is avoided, and the core electrical performance and shielding performance of the sensor chip are further ensured.

The application relates to the field of micro electro mechanical system, in particular to a MEMS pressure sensor packaging method, which comprises the following steps: S1, providing a MEMS chip, an ASIC chip and a PCB board containing multiple units; S2, bonding the ASIC chip on each unit of the PCB board, and electrically connecting the ASIC chip on each unit with the unit of the PCB board; S3, setting a dam on each unit, and cutting and separating the units on the PCB board to form independent units each with a dam; S4, bonding and fixing the MEMS chip in a cavity surrounded by the dam through glue, and electrically connecting the MEMS chip with the ASIC chip; and S5, fixing an upper cover with a pressure relief hole on the dam to complete the packaging. The application realizes product high integration and product miniaturization.

The invention discloses a piezoresistor-capacitor-mott memristor synergistically integrated MEMS pressure sensor and a preparation method thereof. The piezoresistor-capacitor-mott memristor synergistically integrated MEMS pressure sensor comprises a first substrate, a piezoresistor, an ohmic contact, a first insulating layer, an adhesion layer, a first electrode, a phase change layer, a second electrode, a fixed resistor R0, a pressure sensitive film, a second insulating layer, an upper polar plate, a second substrate, a lower polar plate and a cavity. And the first electrode, the phase change layer and the second electrode form a Mott memristor. Under the action of external pressure, the output oscillation frequency is reduced when the resistance value of the piezoresistor is increased and the capacitance value of the capacitor is reduced, and the sensitivity of the sensor is effectively improved through the synergistic effect of the piezoresistor and the capacitor. According to the invention, the Mott memristor, the piezoresistor and the capacitor form an oscillation circuit on a device level, so that stable electrical oscillation is realized. According to the MEMS pressure sensor, the piezoresistor, the capacitor and the mott memristor are integrated in a monolithic mode through a vertical structure, and the space utilization rate is increased.

The utility model discloses a pressure sensor for a water pump. The pressure sensor comprises a shell, an upper cover, a base, a connector, a PCB, a pressure module and a flexible circuit board, the shell is arranged on the outer side of the upper cover and the outer side of the base, the upper cover is connected with the base, the connector is installed on the PCB, the base is provided with a through hole and a square groove, the part, extending into the base, of the pressure module is arranged in the through hole, a Hall sensor is installed on the PCB, and the pressure module is an MEMS pressure sensor. The water pressure and flow can be monitored, the use requirement of the water pump can be met, and intelligent control over the water pump can be achieved.

An MEMS pressure sensor, a method for manufacturing an MEMS pressure sensor, and a pressure detection device are provided. The MEMS pressure sensor includes: an adapter board; an integrated circuit chip on one side of the adapter board; and a sensor chip on a side of the adapter board away from the integrated circuit chip. The sensor chip includes a first electrode and a second electrode, and the first electrode is between the adapter board and the second electrode; the second electrode includes a pressure-sensitive portion opposite to the first electrode and an edge portion surrounding the pressure-sensitive portion, the edge portion is fixed onto the adapter board by a bonding layer, and the first electrode, the second electrode, the bonding layer and the adapter board define a cavity. The first and second electrodes of the sensor chip are electrically connected to the integrated circuit chip through the adapter board.

The invention discloses a temperature drift self-compensating high-sensitivity MEMS pressure sensor and a preparation method thereof. Comprising a first substrate, a piezoresistor, a first ohmic contact, a second ohmic contact, a first insulating layer, an adhesion layer, a first electrode, a phase change layer, a second electrode, a pressure sensitive film, a second insulating layer, a third insulating layer, a metal filling layer, a third electrode, a piezoelectric layer, a fourth electrode, a second substrate and a cavity. The pressure sensitive film, the third electrode, the piezoelectric layer and the fourth electrode form a piezoelectric unit; and the first electrode, the phase change layer and the second electrode form a Mott memristor. According to the invention, the sensitivity of the sensor is effectively improved, the measurement precision of the sensor is improved, the piezoresistor, the piezoelectric unit and the Mmott memristor are integrated in a monolithic manner by adopting a vertical structure, the space utilization rate is improved, and high-precision, high-consistency and low-cost preparation can be carried out through an MEMS (Micro Electro Mechanical System) process.

This invention discloses a photoacoustic spectroscopy-based multi-gas MEMS miniature gas sensor, comprising a packaged shell. An integrated circuit chip, a MEMS infrared light source, and a MEMS pressure sensor are respectively disposed within the cavity of the packaged shell. The integrated circuit chip, MEMS infrared light source, and MEMS pressure sensor are electrically connected. The integrated circuit chip controls the operating state of the MEMS infrared light source and reads the output signal of the MEMS pressure sensor. The MEMS infrared light source converts the electrical signal into an optical signal, and the MEMS pressure sensor converts the acoustic signal into an electrical signal. This invention has advantages such as small size, low cost, high accuracy, and good reliability, and can realize real-time monitoring of multiple gases, showing promising application prospects.

The invention discloses a high-insulation anti-breakdown MEMS pressure sensor and a packaging method thereof, and belongs to the technical field of MEMS sensor design and packaging. In order to solve the problems that an MEMS pressure sensor is weak in electric breakdown resistance and low in reliability under temperature cycle and overload conditions, the MEMS pressure sensor comprises an MEMS pressure sensing chip, a pressure bearing substrate, a pressure ring, a pressure sensing metal corrugated diaphragm, an insulating filling ring, liquid oil and a plugging steel ball, the pressure-bearing base body is provided with an inner cavity, and the MEMS pressure sensing chip is fixed in the inner cavity; the insulating filling ring is arranged in the inner cavity and is positioned around the MEMS pressure sensing chip; the pressure-sensitive metal corrugated diaphragm is connected with the end part of the pressure-bearing base body in a sealing manner through the pressing ring, so that a sealing cavity is defined by the pressure-sensitive metal corrugated diaphragm and the end part of the pressure-bearing base body, and the MEMS pressure-sensitive chip and the insulating filling ring are positioned in the sealing cavity; a gap in the sealing cavity is filled with liquid oil; an oil injection hole communicated with the sealing cavity is formed in the pressure-bearing base body, and the blocking steel ball is welded to the oil injection hole in a sealed mode. The invention is applied to the field of pressure sensors.

The present disclosure provides an adaptive temperature control system and method for a MEMS pressure sensor. The adaptive temperature control system comprises a core, a temperature control module and a socket. The core is mechanically mounted on the socket, and integrates a temperature measuring element, a MEMS chip and a heating and refrigeration device. The temperature control module is directly installed in the internal space of the socket, and is used to collect the temperature signal of the MEMS chip from the temperature measuring element, adjust the current size and direction flowing to the heating and refrigeration device, and drive the heating and refrigeration device to heat or refrigerate the MEMS chip, so as to accurately stabilize the working temperature of the MEMS chip within a preset target range. The socket is used to simultaneously serve as the mechanical support and passive heat dissipation component of the core. The present disclosure solves the problem of thermal characteristic drift caused by temperature change by constructing a laminated high-efficiency heat management structure of "MEMS chip-bonding-intermediate carrier layer-thermal conductive interface material-heating and refrigeration device", and improves the measurement stability and precision of the sensor in a wide temperature range.

The invention provides an MEMS pressure sensor and a manufacturing method thereof, the MEMS pressure sensor comprises a first device structure and a second device structure, the first device structure comprises a substrate, the front surface of which is provided with a first cavity; the device layer is formed above the front face of the substrate, a piezoresistor, an electrode and a wire connecting the electrode and the piezoresistor are formed in the device layer, and the piezoresistor is formed on the surface of the side, away from the substrate, of the device layer; the second device structure and the first device structure are bonded together, the second device structure comprises a cover plate, a second cavity is formed between the cover plate and the piezoresistor, a strain film is formed between the first cavity and the second cavity, and the piezoresistor is formed in the strain film. Compared with the prior art, the MEMS pressure sensor has the advantages that the piezoresistive region is hermetically protected by adopting a wafer bonding technology, and a sensitive structure with a pressed back surface is designed, so that the MEMS pressure sensor can stably work in severe environments such as high temperature, high humidity, high oil contamination and high pH value for a long time.

The invention discloses an anti-interference piezoresistive detection type MEMS pressure sensor and a preparation method thereof. Comprising resonators, a pressure sensing diaphragm and a stress concentration beam, two resonator groups are symmetrically arranged about the symmetry axis of the pressure sensing diaphragm, and the two resonators in each group are respectively arranged in the central area and the edge area of the pressure sensing diaphragm and are respectively used for bearing tension and pressure; each stress concentration beam is connected with one group of resonators through a silicon island, and differential mode output is realized through the fact that the center stress direction and the boundary stress direction of the stress concentration beams are opposite when the stress concentration beams deform; output signals of the two center resonators or the two boundary resonators are subjected to differential superposition processing, and finally high-signal-to-noise-ratio signals with the anti-interference capacity are formed. Resonant frequency signals are output in a differential superposition mode to obtain the magnitude of the pressure to be measured, a piezoresistive signal pickup mechanism is adopted, resonance signals are easy and convenient to extract, a rear-end conditioning circuit can be remarkably simplified, and the integration level is improved.

The invention provides a non-parametric MEMS pressure sensor structure intelligent design method based on deep learning. The method comprises the following steps: obtaining MEMS sensor experiment data based on finite element simulation; a verification network is constructed and trained, and forward design from a non-parameterized structure of the cross-resolution sensor to performance parameters is realized; and constructing and training a generative network CVAE-GAN to realize a reverse design from a performance parameter to a non-parameterized structure. Compared with a traditional MEMS sensor structure design method based on finite element simulation, time-consuming multi-physical field simulation and complex manual parameter adjustment do not need to be carried out, the design efficiency is remarkably improved, and the method has the advantages of being high in speed, high in precision and intelligent. Compared with other MEMS sensor intelligent design methods, the method has the advantages that a fixed boundary condition is optimized into a variable boundary condition, and the method is suitable for more application scenes; discrete images are optimized into continuous vectors which can be directly operated with gradients, so that high-difference multi-solution generation is facilitated, and structural expressions with different precisions are compatible; the generated multiple solutions can be used for comparing and screening tolerance of machining errors.