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Dual-SOI-structured MEMS pressure sensor chip and manufacturing method thereof

A pressure sensor and chip technology, which is applied to the measurement of fluid pressure by changing ohmic resistance, and the measurement of the property force of piezoelectric resistance materials. The effect of stability and no leakage

Active Publication Date: 2015-09-23
无锡芯感智半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sensor can meet most civilian needs, but due to its PN junction isolation method, it cannot be used in high temperature occasions, such as some industrial control, military, automobile and other fields

Method used

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  • Dual-SOI-structured MEMS pressure sensor chip and manufacturing method thereof
  • Dual-SOI-structured MEMS pressure sensor chip and manufacturing method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] The present invention provides a dual SOI structure MEMS pressure sensor chip, see figure 1 , Including: SOI substrate silicon wafer, the SOI substrate silicon wafer includes a bottom P-type or N-type substrate silicon wafer 1, an SOI insulating isolation dielectric layer 2 and a single crystal silicon pressure sensitive film 3; the insulating isolation dielectric layer 2, for example An oxide layer is generated for thermal oxidation; after polishing the single-crystal silicon pressure sensitive film 3, an insulating isolation dielectric layer 4 is grown, and the insulating isolation dielectric layer 4 can be an oxide layer or a nitride layer; a low temperature α is deposited on the insulating isolation dielectric layer 4 -The silicon film is doped by ion implantation and then etched into a bridge resistor 5, which is annealed at 1000-1100°C; the monocrystalline silicon layer 3, the insulating isolation dielectric layer 4, and the α-silicon film layer 5 constitute the top ...

Embodiment 2

[0015] The present invention also provides an absolute pressure double SOI structure MEMS pressure sensor chip, see figure 2 , The same structure and components as in embodiment 1 will not be repeated, the difference is: after forming the gauge pressure chip pressure reference cavity 8 on the silicon substrate 1 through the ICP deep etching process, the glass sheet 9 is bonded on the back of the SOI substrate , To form an absolute pressure sensor chip structure.

Embodiment 3

[0017] The method for manufacturing a MEMS pressure sensor chip with a dual SOI structure provided by the present invention includes the following steps:

[0018] (1) Determine the size of the chip and sensitive film according to the pressure range requirements, determine the linear stress area on the pressure sensitive film through theoretical calculation, arrange the α-silicon resistor and metal interconnection, and make the photolithography to complete the design;

[0019] (2) P type or N type The crystal orientation silicon wafer is thermally oxidized, and then bonded to form an SOI substrate silicon wafer. The SOI substrate silicon wafer includes a P-type or N-type substrate silicon wafer 1, an insulating isolation dielectric layer of an SOI structure, and a monocrystalline silicon pressure Sensitive membrane type 3;

[0020] (3) Perform thinning and polishing processes on the top monocrystalline silicon 3 of the SOI substrate silicon wafer to reduce the thickness of the monocr...

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Abstract

The invention proposes a dual-SOI-structured MEMS pressure sensor chip and a manufacturing method thereof. The dual-SOI-structured MEMS pressure sensor chip comprises a first SOI structure and a second SOI structure, wherein the first SOI structure comprises a substrate and a pressure sensitive film of a pressure sensor, the second SOI structure is a surface-layer SOI structure and comprises a piezoresistor material which is formed by growing insulation isolation medium and depositing and doping alpha-silicon on the insulation medium, a Wheatstone bridge structure is formed through etching, and the second SOI structure replaces the conventional PN junction isolating mode and increases the operating temperature range of the sensor chip. The dual-SOI-structured high-temperature MEMS pressure sensor chip related by the invention is suitable for mass production, and has good consistency, precise measuring range, small chip size, high temperature resistance, high reliability and low cost.

Description

Technical field [0001] The invention relates to the field of MEMS design and processing, in particular to a dual SOI structure MEMS pressure sensor chip and a preparation method thereof. Background technique [0002] As a new type of sensor technology, the cost of MEMS sensors has been significantly reduced. In 2014, the market for silicon-based MEMS devices reached more than 110 billion U.S. dollars; with the rise of smart phones, tablets, wearable devices, and more mature automotive electronics and industrial control With the huge market demand in the field, the MEMS industry has entered the fast lane. Among them, the MEMS pressure sensor is one of the most widely used sensors. [0003] From the technical principle, pressure sensors are mainly divided into piezoresistive type, capacitive type, strain type, etc. The types are divided into ceramic pressure sensors, MEMS pressure sensors, slightly soluble pressure sensors, strain pressure sensors, sputtering film pressure sensors, e...

Claims

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Application Information

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IPC IPC(8): G01L1/18G01L9/06
Inventor 刘同庆
Owner 无锡芯感智半导体有限公司
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