162 results about "Wheatstone bridge" patented technology

The invention provides an MEMS pressure sensor and a manufacturing method thereof, and an electronic device, and the method comprises the steps: providing a first substrate, forming at least two first pressure structures on the surface of the first substrate, each first pressure structure comprises a first electrode layer, a first sacrificial layer, a first supporting layer, a second electrode layer, a second supporting layer, and a first cavity, and a first release hole; a second substrate is provided, at least two second pressure structures are formed on the surface of the second substrate, and each second pressure structure comprises a third electrode layer, a second sacrificial layer and a second cavity; bonding the second supporting layer with the second sacrificial layer; the second substrate is removed to expose the third electrode layer, the third electrode layer and the second electrode layer form a variable capacitance structure, the second electrode layer and the first electrode layer form a reference capacitance structure, and the two variable capacitance structures and the two reference capacitance structures jointly form a Wheatstone bridge. According to the scheme, the measurement precision is improved, and the device performance is further improved.

The invention provides an MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, forming a first pressure structure on the first substrate, and forming a second pressure structure on the second substrate; bonding the first pressure structure and the second pressure structure; the first substrate is removed, the first pressure structure and the second pressure structure jointly form a third pressure structure, the third pressure structure comprises a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a fifth electrode layer which are arranged at intervals from top to bottom, and a dielectric layer is formed between every two adjacent electrode layers; and cavities penetrating through the dielectric layers are formed in the dielectric layers. According to the scheme, the multiple electrode layers arranged from bottom to top are formed, the multiple electrode layers form the first capacitor, the second capacitor, the third capacitor and the fourth capacitor respectively, then the Wheatstone bridge is formed jointly, the measurement precision of the MEMS pressure sensor is improved, meanwhile, the plane size of the MEMS pressure sensor is reduced, and the integration level of the device is improved.

The invention relates to the technical field of sensors, and provides a six-dimensional force and torque force sensor and a preparation method thereof.The six-dimensional force sensor is of a disc-shaped structure and comprises an outer supporting ring, an inner mass block and eight elastic beams connected between the outer supporting ring and the inner mass block; wherein the eight elastic beams comprise a first elastic beam and a second elastic beam which are alternately arranged around the inner mass block, the first elastic beam is a straight beam, the second elastic beam is a special-shaped beam, and a strain gauge preset on the main surface of each elastic beam responds to the strain of the elastic beam to generate a measurement signal; and the force and / or the torque applied to the inner mass block or the outer support ring can be determined according to the measurement signal. Due to the fact that the different elastic beams are different in shape and structure, the strain gauges are preset on the elastic beams of different types and positions, and the bridging mode is set, the output of each Wheatstone bridge is only sensitive to the force or the moment of force in the changed direction and is not sensitive to the force or the moment of force applied in other directions, and the decoupling capacity of the sensor structure is improved to the maximum degree.

The invention discloses a device and a method for measuring the velocity field of an autoclave through hot-pressing wind speed. The device comprises a thermosensitive probe, a Wheatstone bridge, a lock-in amplifier, an NI multi-channel data acquisition card and a computer, the thermosensitive probe is used for instantaneously detecting the temperature of a placement point position and generating resistance fluctuation based on sensing temperature change; the Wheatstone bridge is formed by connecting a fixed resistor, a variable resistor and a thermosensitive probe, and is used for forming a series circuit with the lock-in amplifier; the lock-in amplifier is used for supplying power to the Wheatstone bridge and providing co-frequency voltage at the same time, so that resistance data of a thermosensitive probe in the Wheatstone bridge is converted into voltage data to be output; the NI multi-channel data acquisition card is used for acquiring in-phase component voltage signals output by the lock-in amplifier; the computer is used for processing the voltage data to obtain the average speed and the pulsation speed of the measurement point. According to the invention, the problems of limited precision, insufficient sensitivity and poor adaptability to the internal environment of the autoclave in the conventional gas speed measurement method are solved.

The invention discloses a micropositioner hysteresis compensation driving control system and method based on strain gauges, and relates to the technical field of micro positioning control. The system comprises a micropositioner mechanical module, a displacement detection feedback module, a control module and a power amplifier module. In the mechanical module, a piezoelectric ceramic stack drives a moving table, and a first flexible hinge group and a second flexible hinge group are respectively used for guiding and transmitting driving force and are symmetrically arranged; the displacement detection feedback module outputs a voltage signal through a strain gauge adhered to the first flexible hinge and a Wheatstone bridge; the control module reversely deduces actual displacement according to a voltage signal and a strain-displacement linear relation, and a control signal is generated by comparing an instruction; and the power amplifier module converts the signal into a driving voltage to adjust the piezoelectric ceramic stack, so that closed-loop control is realized to suppress a hysteresis error. According to the invention, system integration is realized, cost and operation difficulty are reduced, and positioning precision and reliability are improved.

A kind of heart sound sensing structure and its preparation method, the structure includes double SOI substrate, center mass, elastic support beam, piezoresistive sensing unit and capacitive sensing unit.The front surface of center mass is provided with additional mass layer, and the back surface is kept bottom layer silicon to increase thickness;Elastic support beam connects mass and frame;Piezoresistive sensing unit is composed of four piezoresistors to form wheatstone bridge, and capacitive sensing unit includes movable and fixed comb-tooth capacitive plate crossing each other.When the sound pressure gradient of heart sound signal drives mass to deviate, elastic support beam bends to change piezoresistive value, and at the same time, comb-tooth capacitive plate overlapping area changes to cause capacitive value change, to realize piezoresistive and capacitive dual-mode synchronous detection.Two kinds of detection mechanisms calibrate each other, which significantly improves the sensitivity and anti-interference ability of low-frequency heart sound signal.The preparation method is based on double SOI substrate, integrated by ion implantation, etching, metal deposition and 3D printing process, suitable for miniaturized wearable heart sound monitoring application.

By utilizing the existing speaker drivers associated with the dam headphones, smart headphone functionality is enabled without the need for additional auxiliary sensors, providing a peripheral device that excels in terms of weight, volume, cost, and power consumption. [Solution] The zeroing circuit 300, which selectively couples to the magnetic coil driver of the headset, includes a Wheatstone bridge that detects minute fluctuations in the headphone driver voltage caused by the excitation signal, thereby zeroing out the electrical energy associated with the audio input signal. This provides an output signal that mainly consists of the electrical energy associated with the excitation signal generated by the magnetic coil driver in response to external pressure applied to the diaphragm.

A production method for a flip-chip pressure sensor for back pressure, the flip-chip pressure sensor for back pressure comprising a main chip portion (1) and a cover plate portion (2), wherein a Wheatstone bridge (12) and a first electrical connection structure (13) are provided on a main body (11) of the main chip portion (1), the first electrical connection structure (13) being electrically connected to the Wheatstone bridge (12); and the cover plate portion (2) comprises a cover plate (21) and a second electrical connection structure (22), the cover plate (21) being bonded to the main body (11), and realizing electrical connection between the second electrical connection structure (22) and the first electrical connection structure (13). The second electrical connection structure (22) passes through the cover plate (21) and extends to the side surface of the cover plate (21) facing away from the main body (11), enabling direct soldering packaging of the second electrical connection structure (22) and an external substrate by means of SMT, and thereby facilitating packaging, improving the packaging efficiency and reliability of the flip-chip pressure sensor for back pressure.

The application provides a kind of hollow core polarization maintaining optical fiber cutting machine tension control system and control method, belong to optical fiber cutting control technical field, system uses four layers architecture of perception layer, processing layer, control layer, execution layer: perception layer is measured by double strain gauge symmetrical compensation device and temperature sensor synchronous acquisition mechanics and environmental signal;Processing layer adopts Wheatstone bridge, instrument amplifier, low-pass filter, 16-bit ADC and temperature compensation unit to realize signal multistage conditioning;Control layer deploys feedforward adaptive PID compound control system, combined with optical fiber diameter-tension parameter library feedforward compensation and dynamic PID adjustment, and integrates step loading control and fault early warning mechanism;Execution layer adopts torque mode motor and outputs linear tension through lead screw mechanism.

The application discloses a MEMS sensor and an electronic atomization device. The MEMS sensor comprises a substrate, a passivation layer, a substrate, a first force applying element, a second force applying element and a conductive contact. The first surface of the substrate has a groove, and the second surface has a Wheatstone bridge circuit. The passivation layer covers the second surface of the substrate. The substrate covers the groove to form a sealed cavity with the substrate. At least part of the first force applying element is arranged on the side of the passivation layer away from the substrate. At least part of the second force applying element is arranged on the bottom wall of the groove. The conductive contact is arranged on the substrate and / or the substrate. The first force applying element and the second force applying element are both configured to apply a force close to or away from the substrate to the bottom wall of the groove under the condition of being powered on. In this way, the substrate can always be in a flat initial state, thereby improving the problem that the deformation of the substrate does not change linearly with the pressure, and improving the detection accuracy of the MEMS sensor.

The invention provides a vanadium dioxide temperature compensation gas flow sensor, and belongs to the field of sensor manufacturing. The sensor comprises a silicon substrate, a silicon oxide and silicon nitride layer, a heat insulation cavity, a heat insulation gap, a chromium adhesion layer, a vanadium dioxide temperature measurement resistor, a platinum heating resistor, a platinum environment temperature measurement resistor, a platinum wire and a platinum electrode, wherein a heating resistor is arranged in the center of the silicon oxide and silicon nitride layer suspended above the cavity, four vanadium dioxide temperature measurement resistors are symmetrically distributed on two sides of the heating resistor to form a Wheatstone bridge, a heat insulation gap is formed between the heating resistor and the temperature measurement resistors, and platinum environment temperature measurement resistors are distributed on the upstream and the downstream of the cavity area. When no gas flows in, chip heat distribution is symmetrical, and upstream and downstream vanadium dioxide temperature measuring resistors have the same resistance value; when gas flows in, the resistance value of upstream vanadium dioxide is increased, the resistance value of downstream vanadium dioxide is decreased, the Wheatstone bridge outputs voltage, the relation between the voltage value and the gas flow is recorded, and then the flow is compensated and corrected according to the values of the environment temperature measuring resistor and the heating resistor to obtain the final gas flow value.

This invention belongs to the field of stress-strain testing technology, specifically relating to a welded strain gauge for nuclear power plant testing. Both the strain gauge and the terminals are mounted on a metal base. The strain gauge consists of a main strain gauge and a compensating strain gauge. The strain gauge and the terminals are connected by wires. Measuring wires are also connected to the terminals. Measuring wire one has a male connector, and measuring wire two has a female connector. Measuring wire one and measuring wire two are connected via the male and female connectors. Measuring wire two is connected to a compensating bridge box. The compensating bridge box contains two precision resistors, forming a Wheatstone bridge with the main strain gauge and the compensating strain gauge on the metal base. This invention is used for stress-strain measurement on the surface of pressure vessels such as nuclear power pressure pipelines.

A MEMS sensor (100) and an electronic atomization device (1000). The MEMS sensor (100) comprises a substrate (10), a base plate (20), a temperature measurement element (31), and an electrically conductive contact (40), wherein the substrate (10) has a first surface (11) and a second surface (12) opposite to each other, the first surface (11) being provided with a recess (13), the second surface (12) being provided with a Wheatstone bridge circuit (14), and a bridge arm of the Wheatstone bridge circuit (14) comprising a varistor (140); the base plate (20) covers the recess (13) to form a sealed cavity; the temperature measurement element (31) is arranged on the inner surface of the sealed cavity; the electrically conductive contact (40) is arranged on the substrate (10) and / or the base plate (20), and is electrically connected to the temperature measurement element (31); and the temperature measurement element (31) has a temperature coefficient of resistance.

This utility model relates to a six-dimensional torque sensor system. Through integrated circuit design and packaging within the six-dimensional torque sensor, high-precision and highly sensitive deformation sensing and electrical signal conversion output are achieved via strain gauges on the elastic beams of the main frame structure. After specific measurement using a half-bridge differential Wheatstone bridge, the measured signal is amplified, filtered, and converted from digital to analog data by an ADC chip before being sent to a lower-level computer. The lower-level computer then reads the acquired sensor measurement signal, forming a high-precision circuit design specifically matched to the six-dimensional torque sensor. The coordinated installation of the strain gauges, half-bridge differential Wheatstone bridge, and ADC chip makes it less susceptible to environmental factors and effectively suppresses noise interference while achieving high signal gain, effectively realizing the measurement output function of the six-dimensional torque sensor.

The invention discloses a pressure measuring device and a measuring method, particularly relates to the technical field of pressure measurement, and solves the technical problem that a pressure measuring device in the prior art is not suitable for teaching. According to the technical scheme, a double-strip-shaped copper foil electrode is fixed to the surface of an acrylic bearing plate, 8B pencil graphite EVA foam covers the double-strip-shaped copper foil electrode to form a sensor, and the tail end of the electrode is connected with a wire to be connected into a Wheatstone bridge; a bridge output signal is sampled by 860SPS through an ADS1115 module, and meanwhile, the NTC thermistor compensates the temperature drift in real time; the sensor receives pressure and then is connected with the Arduino through a wire to convert and output pressure change to a computer for real-time display; according to the invention, students can deeply understand a piezoresistive effect principle through a low-cost self-made device, observe dynamic pressure changes in real time, and explore a pressure distribution rule.

This application relates to the field of strain measurement and discloses a strain gauge for detecting radial vibration and torque, comprising: a first substrate on which a first strain gauge is encapsulated by a film; a second substrate on which a second strain gauge is encapsulated by a film; a third substrate on which a third strain gauge is encapsulated by a film, a connecting portion on one side of the third substrate, and a corner of the first and second substrates adjacent to each other connected to the connecting portion; the first, second, and third strain gauges all measure strain using a Wheatstone bridge; and a support body including a first support end, a second support end, and a fixed plate, wherein the first support end is used to cooperate with a rotating shaft, the fixed plate is connected between the first and second support ends, the first and second substrates can be bent at the connecting portion and then attached to the fixed plate respectively, and the third substrate can be attached to the rotating shaft. This application can simultaneously detect radial vibration and torque.

The application discloses a dual-mode underwater acoustic sensor and a preparation method thereof. The sensor structure comprises an SOI substrate, a sensitive structure comprising a middle mass block, a rectangular beam and a frame supporting the mass block through the rectangular beam, a piezoresistive detection unit comprising a piezoresistive resistor arranged at the end of each rectangular beam and a metal lead and an electrode connected into a Wheatstone bridge, and a capacitive detection unit comprising movable comb-tooth capacitive plates arranged around the mass block except the side of the rectangular beam and fixed comb-tooth capacitive plates arranged on the frame and intersecting with the movable comb-tooth capacitive plates. When an underwater acoustic signal causes the mass block to be offset, the rectangular beam is bent to cause the piezoresistive resistor to change in resistance value, and the facing area of the comb-tooth capacitive plates is changed to cause the capacitance to change, so that piezoresistive and capacitive dual-mode signal detection is realized. The application integrates the advantages of high precision of piezoresistance and strong temperature drift resistance of capacitance through integrated design, the comb-tooth capacitive mode can calibrate the piezoresistive mode, and the measurement accuracy, stability and robustness in a complex marine environment are significantly improved.

The utility model relates to the technical field of force sensors, in particular to a force sensor connecting structure and a force sensor, the force sensor connecting structure comprises an elastic main body, the elastic main body is provided with a strain beam extending outwards, and the strain beam is fixed to an external structure. The strain beam deforms along with the elastic main body when the elastic main body is subjected to external force; the strain gauges are attached to at least one side face of the strain beam and used for detecting deformation of the strain beam in at least one axial direction, and the strain gauges are electrically connected to form a Wheatstone bridge; one end of the flexible circuit board assembly is electrically connected with the strain gauge, the other end of the flexible circuit board assembly is electrically connected with a circuit board, and the circuit board is used for signal conversion and output. Through the above arrangement, on one hand, the disorder of the wire harnesses is reduced, and on the other hand, the connection efficiency is also improved through the connection of the flexible circuit board, so that the production efficiency is improved.

The application provides a high-performance gas sensor detection method, which comprises the following steps: setting up a detection circuit; connecting a low-temperature drift resistor in series with a compensation element of a Wheatstone bridge circuit; collecting the voltage across the low-temperature drift resistor at 25 DEG C, collecting the voltage of the compensation element at 25 DEG C, and calculating the equivalent resistance of the compensation element at 25 DEG C as a calibration value; collecting the voltage of the compensation element and the input voltage in real time, and calculating the equivalent resistance of the compensation element; and adjusting the input voltage across the sensitive element and the compensation element so that the equivalent resistance of the compensation element is the same as the calibration value in step two. The application can accurately calculate the voltage value that needs to be compensated on the bridge arm, completely eliminates the measurement error caused by temperature drift, completely compensates the excessive temperature drift of the sensor caused by the change of the ambient temperature, completely eliminates the measurement error caused by temperature drift, improves the detection accuracy, and solves the problem of unsatisfactory high and low temperature detection effect.

The invention discloses a butterfly-shaped structure pressure sensor chip applied to high temperature and high pressure and a preparation method thereof. The butterfly-shaped structure pressure sensor chip comprises a supporting layer, an insulating layer and a device layer which are arranged from bottom to top, a cavity is etched on the back of the supporting layer, a sensitive film is arranged right above the cavity, and a butterfly-shaped beam structure is arranged on the sensitive film; the edge and the center of the butterfly island beam structure are respectively provided with four piezoresistor strips, the four piezoresistor strips are connected into a semi-open-loop Wheatstone bridge through five P-type heavily-doped silicon leads, five metal point electrodes are arranged at the center of the five P-type heavily-doped silicon lead areas, sealing rings are arranged on the outer sides of the peripheries of the five metal point electrodes, and the sealing rings are connected with the metal point electrodes. The adjacent P-type heavily-doped silicon leads and the sealing rings are separated by fine slits; according to the invention, the pressure bearing limit is effectively improved, the high range is ensured, excellent sensitivity and linearity performance are realized, the high pressure measuring capability of dozens of to hundreds of MPa is realized, the tolerable temperature is up to 400 DEG C, and the sensor is widely applied to the fields of petroleum, natural gas, chemical engineering, high-pressure equipment monitoring and the like.

The invention relates to a resistor layout (1) for a Wheatstone bridge comprising four electrical resistance elements (2, 3), wherein the structures of the four resistance elements are arranged concentrically around a common center point (M) and extend in a radial and a tangential direction to the center point, wherein the first resistance elements extend tangentially around the center point by a defined angle α and the second resistance elements extend tangentially around the center point by a defined angle β.

The application discloses a MEMS sensor and an electronic atomization device, the MEMS sensor comprising a substrate, a substrate, a first electrode plate, a second electrode plate and a conductive contact; the first surface of the substrate has a groove, and the second surface of the substrate has a Wheatstone bridge circuit, the bridge arm of the Wheatstone bridge circuit comprising a piezoresistor; the substrate covers the groove to form a sealed cavity; the first electrode plate is arranged on the bottom wall of the groove; the second electrode plate is arranged on the substrate and is arranged in a spaced manner with the first electrode plate; the conductive contact is arranged on the substrate and / or the substrate and is electrically connected with at least one of the first electrode plate and the second electrode plate; wherein the first electrode plate and the second electrode plate are configured to repel each other or attract each other under the condition of being electrified. In this way, the deflection of the strain film is always small, thereby, the problem that the deformation of the substrate does not change linearly with the pressure is well improved, so that the detection accuracy of the MEMS sensor is improved.

The invention discloses a pipe wall thinning monitoring method, device and equipment of a boiler heating surface and a storage medium, and relates to the technical field of boiler monitoring, and the pipe wall thinning monitoring method of the boiler heating surface comprises the steps that excitation current is provided for a Wheatstone bridge through a constant current source; obtaining first voltage data of the reference section and the monitoring section and second voltage data of the two fixed resistors from the Wheatstone bridge, and obtaining a voltage difference value according to the first voltage data and the second voltage data; environmental data are obtained, and the pipe wall thickness reduction amount of the monitoring section is obtained according to the environmental data, the voltage difference value and a preset lookup table; and generating state early warning information based on a comparison result of the thickness reduction amount and a preset threshold value. According to the invention, the accuracy of boiler pipe wall thinning monitoring can be improved.

A digital load cell includes: a strain bridge including a Wheatstone bridge formed by connecting four resistive strain gauges and a temperature sensing resistance element connected in series to the Wheatstone bridge. An analog-to-digital conversion circuit excites the strain bridge, and includes a plurality of input channels and an output terminal. The input channels receive feedback signals from the strain bridge, and the output terminal outputs the feedback signals after analog-to-digital conversion. A signal processor includes a load force calculation unit and a state information matrix calculation unit. The load force calculation unit calculates a differential voltage and a compensation function based on the feedback signals obtained from the output terminal, and calculates a load force value based on the differential voltage and the compensation function. The digital load cell and related weighing system can provide comprehensive and effective real-time health state monitoring for the digital load cell.

The invention discloses a thermal type gas flow measuring system with temperature compensation, which comprises a bridge module, which adopts a Wheatstone bridge and introduces two paths of signals from the crossed arms of the bridge, the two paths of signals are equal in the balance state of the bridge, and the two paths of signals are voltage signals and are used for reflecting the voltage change of a resistor caused by temperature; the voltage change is sent to the comparison amplification module; the comparison amplification module is used for comparing and amplifying the two paths of voltage signals input by the bridge module; the feedback control module is used for outputting a power signal to the bridge module according to the voltage signal output by the comparison amplification module so as to compensate the change of the resistance value of the resistor caused by the temperature change; the flow output module is used for comparing and amplifying the voltage value which is output by the bridge module and reflects the flow; and the temperature output module is used for measuring the real-time temperature of the gas, introducing the measured temperature into the flow output module, and carrying out conditioning calculation on the measured temperature and a voltage value output to the flow output module by the bridge module. According to the invention, accurate measurement of gas flow in high and low temperature environments is realized, and gas flow measurement in an environment of-55 DEG C to + 70 DEG C can be realized.

This utility model discloses a signal acquisition and amplification circuit, relating to the field of signal acquisition and transmission. The circuit includes: a Wheatstone bridge module for feeding back a fixed voltage signal and a temperature change signal to a differential amplifier module; and a differential amplifier module for varying the output voltage when there is a difference between the input fixed voltage signal and the temperature change signal. The advantages of this utility model are: by setting a differential amplifier module, the small signal obtained from the sensor is linearly amplified, which is more conducive to acquisition and identification by subsequent circuits; the circuit makes the correspondence between the output voltage signal Vout and the NTC resistor value clear and easy for subsequent circuits to acquire; the signal input impedance is high and the output impedance is low, which is beneficial for impedance matching with subsequent circuits and reduces power consumption; the differential amplifier module provides filtering for high-frequency noise; and the NTC resistor has low self-heating, ensuring the accuracy and stability of temperature acquisition.

Disclosed is an electro-femtofluidic flow sensor that infers volumetric flow by translating pressure-induced membrane deflection into resistance changes measured with Wheatstone bridge circuitry (300). The device comprises first and second membranes (102, 104) enclosing an electrically conductive fluid (110); first and second Wheatstone bridges (300), each having a variable resistor Rv formed by a portion of the electrically conductive fluid (110) and fixed resistors R1-R3; and at least one processor (302) that, when the sensor is fluidically connected in series with a flow channel carrying a fluid, computes membrane deflection from bridge outputs and estimates flow rate. To address in-situ nanoprinting feedback and control on opaque substrates used in molecular self-assembly, the electro-femtofluidic flow sensor enables femtoliter-per- second measurements. By enabling real-time, ultralow-flow sensing under opaque conditions, the approach may support new nanofabrication modalities and the creation of molecular-level machines for biomedical and other applications.

The application belongs to the technical field of electric field sensing, and specifically discloses a piezoelectric-electrostatic double-regulation electric field sensor based on silicon-on-insulator, which comprises a silicon-on-insulator substrate, a piezoelectric driving unit, a composite sensing electrode plate and a signal detection circuit; the silicon-on-insulator substrate is composed of a substrate layer, a buried oxygen layer and a device layer, the substrate layer is provided with a back cavity, the device layer forms a center suspended plate and a support beam through a releasing groove, and the center suspended plate and the support beam form a sensitive thin film structure; the piezoelectric driving unit is embedded in the back cavity and is fixed to the lower surface of the sensitive thin film structure, the composite sensing electrode plate is attached to the upper surface of the center suspended plate, and the stress concentration area of the support beam is integrated with a piezoresistance element and forms a Wheatstone bridge. Through the piezoelectric-electrostatic double-regulation mechanism and the optimized structure design, the application realizes electric field detection with high sensitivity, low noise and good temperature stability, has strong process compatibility, and can be widely applied to scenes with high requirements for electric field measurement, such as power equipment monitoring and thunderstorm early warning.

The application discloses a glass-packaged micro thermal conductivity detector wafer and a preparation method thereof, and belongs to the technical field of gas detection. The wafer comprises a plurality of micro thermal conductivity detectors; the plurality of micro thermal conductivity detectors are arranged on a packaging wafer; the packaging wafer is composed of a first glass wafer and a second glass wafer; a plurality of packaging plates are arranged on the first glass wafer; and a plurality of substrates are arranged on the second glass wafer; a plurality of thermal conductivity cells are arranged on the packaging plates; symmetric second half-groove channels are arranged on both sides of the thermal conductivity cells; a plurality of first half-groove channels are arranged on the substrates; the first half-groove channels and the second half-groove channels are matched to form through grooves; the packaging wafer further comprises a plurality of micro circuits; the micro circuit comprises a Wheatstone bridge and electrodes connected to both ends of the Wheatstone bridge; and pads are arranged on the top of the electrodes. The application enlarges the effective sealing area, improves the air tightness, shortens the heat dissipation path of the thermal element, effectively reduces heat loss, and improves the sensitivity of the device.

The invention relates to a primary airfoil structure on which mechanical stress is to be detected. A strain gauge is used at a measuring point, which is designed for a material with a coefficient of thermal expansion α. B is designed, while the material of the wing primary structure differs from the intended material and has a coefficient of thermal expansion α T exhibits. According to the invention, the strain gauge is designed and applied such that an apparent strain (10) results from the different coefficients of expansion α. B , α Tand at least partially compensate for a deviation (9) of the value of a target temperature profile (3) of the strain gauge (19, 20) at a target temperature (8). Preferably, the strain gauge designed and applied in this way is used in a special Wheatstone bridge circuit, whereby compensation strain gauges can also be used. The design according to the invention allows for a reduction of a measurement error (11) at a target temperature (8) that deviates from a reference temperature (4) of the strain gauge, or within a temperature range (12).