520 results about "Wheatstone bridge" patented technology

The invention discloses an MEMS thermal flow sensor based on a glass film structure and a preparation method of the MEMS thermal flow sensor. The sensor comprises a glass inner silicon substrate, a back cavity, a silicon through column, a heating resistor, a temperature measurement resistor, an environment temperature measurement resistor, a chromium adhesion layer, a PAD port and a silicon nitride protection layer. Wherein the heating resistor is located in the center, and the temperature measuring resistors are symmetrically distributed on two sides of the heating resistor; the back cavity is located on the back of the glass inner silicon substrate, and the heating resistor, the temperature measuring resistor and the environment temperature measuring resistor lead a PAD port to the back of the glass inner silicon substrate through a silicon through column. A thermal temperature difference principle is adopted, and upstream and downstream temperature measuring resistors form a Wheatstone bridge. When the flow velocity is not zero, the Wheatstone bridge outputs, and the larger the flow velocity is, the larger the output is. Based on the glass and silicon composite substrate, the suspension film structure is formed through the silicon etching process, transmission of heat to the substrate is greatly reduced, and the heat utilization rate is increased.

Disclosed in the present invention is a stepped elastic beam for a six-axis force sensor. The stepped elastic beam comprises a central platform, a stepped main beam, a floating beam, rims, and strain gauges, wherein the central platform is connected to the floating beam on the outer side by means of the stepped main beam, and the rims at four corners are connected to the floating beam; 24 strain gauges are pasted to the stepped main beam to form six sets of Wheatstone bridges; and when the force / torque of a certain dimension acts on the center of the stepped elastic beam, the sensor deforms, and the resistance value of the strain gauge at a corresponding position is changed, such that an output voltage of a corresponding bridge is changed, and the numerical value of the force / torque of the dimension can be obtained by measuring the change of the voltage. A structure is simple, the sensitivity is high, and the inter-dimensional coupling is low.

The invention discloses a microwave cold noise source fusing TEC temperature control and noise temperature compensation technologies, and belongs to the technical field of microwave radiometer calibration. The device comprises a cold source module, a noise compensation module and a constant-temperature control module, wherein the cold source module generates a low-temperature noise signal through a field-effect tube and a terminal resistor; the noise compensation module detects environment temperature change in real time based on a thermistor and a Wheatstone bridge, drives a noise diode to generate a compensation signal, couples the compensation signal with a cold source noise signal after attenuation, and counteracts noise temperature deviation caused by the environment temperature. The constant temperature control module adopts a platinum resistance sensor and a PID algorithm to control a Peltier element in a closed-loop mode, and accurate adjustment (+ / -0.1 DEG C) is achieved. According to the invention, noise compensation and TEC negative feedback temperature control technologies are combined, so that the noise temperature of the system is stabilized in a range of + / -0.1 K for a long time, the measurement precision and reliability of the microwave radiometer in an outdoor complex environment are remarkably improved, and the method is suitable for scenes of remote sensing detection, unmanned aerial vehicle monitoring and the like.

The invention discloses an integral type portable six-dimensional force measuring plate, which comprises an elastic body and a protection assembly arranged outside the elastic body, and further comprises a hub, a stress table and a plurality of strain beams, the stress table is arranged in the middle of the hub, the hub is connected with the stress table through the plurality of strain beams, a plurality of strain gauges are adhered to different positions of the strain beams, and the elastic body is connected with the hub through the strain gauges. A through hole is formed in the middle of the stress table, a bridge assembly plate for forming Wheatstone bridges and a data acquisition plate for acquiring and converting output signals of the elastomer are arranged in the through hole, and a plurality of wires are led out from the strain gauges and are welded to the bridge assembly plate to form six Wheatstone bridges which are respectively used for detecting forces and moments in three directions, namely Fx, Fy, Fz, Mx, My and Mz. The integrated force measuring plate has the advantages that the integral force measuring plate does not need to be spliced by a plurality of sensors, a plurality of beams can act together to balance stress and compensate each other, the influence of unbalance loading on a measuring result is reduced, and a plurality of force measuring plates can be spliced for use.

The embodiment of the invention provides a hydrogen purity detection method and device, equipment and a storage medium. Comprising the steps that sample gas and to-be-detected hydrogen are obtained, a Wheatstone bridge circuit is constructed based on the sample gas and the to-be-detected hydrogen, and the circuit comprises two fixed resistors and two thermistors; applying heat to the thermistor, and obtaining a resistance change value of the thermistor and a circuit output end detection value; and detecting the purity of the to-be-detected hydrogen according to the resistance change value and the detection value. The hydrogen purity is detected by constructing the Wheatstone bridge circuit and utilizing the thermal response difference of the thermistor to the sample gas and the hydrogen to be detected, and tiny resistance change can be captured, so that the detection precision and accuracy are improved. Based on a stable circuit principle and accurate resistance measurement, interference of external factors is reduced, and a detection result is more reliable. A resistance change value and a circuit output end detection value can be rapidly obtained, real-time detection of the purity of hydrogen to be detected is achieved, and a detection result is provided in time.

The invention provides a self-calibration method of a TMR (Tunnel Magnetoresistive) sensor and a TMR sensor array for current measurement, and relates to the technical field of quantum current sensors. According to the method, a double Wheatstone bridge structure is adopted, a to-be-measured bridge is used for measuring a to-be-measured magnetic field, and a reference bridge is used for measuring a known reference magnetic field; the self-calibration of the TMR sensor is realized by calculating the ratio of the output voltages of the two bridges, so that measurement errors caused by environmental factors such as temperature, humidity and mechanical vibration are eliminated; moreover, the invention provides a TMR sensor array for current measurement, the application of the TMR sensor array further enhances the adaptive capacity of the TMR sensor array in a complex environment, and the array is formed by a plurality of TMR sensor units, so that not only can the spatial resolution of measurement be improved, but also the fault-tolerant capability of the system can be improved through redundancy configuration, and the system reliability is improved. The array structure enables the TMR sensor to perform accurate measurement at a plurality of measurement points at the same time to obtain accurate measurement current.

The invention provides an MEMS pressure sensor and a manufacturing method thereof, and an electronic device, and the method comprises the steps: providing a first substrate, forming at least two first pressure structures on the surface of the first substrate, each first pressure structure comprises a first electrode layer, a first sacrificial layer, a first supporting layer, a second electrode layer, a second supporting layer, and a first cavity, and a first release hole; a second substrate is provided, at least two second pressure structures are formed on the surface of the second substrate, and each second pressure structure comprises a third electrode layer, a second sacrificial layer and a second cavity; bonding the second supporting layer with the second sacrificial layer; the second substrate is removed to expose the third electrode layer, the third electrode layer and the second electrode layer form a variable capacitance structure, the second electrode layer and the first electrode layer form a reference capacitance structure, and the two variable capacitance structures and the two reference capacitance structures jointly form a Wheatstone bridge. According to the scheme, the measurement precision is improved, and the device performance is further improved.

The invention relates to an asymmetric multichannel thermal flow sensor for integrated component detection and a signal processing method, and belongs to the technical field of sensors. The problems that a traditional symmetrical single-channel thermal flow sensor is limited in measuring range, saturated in output, insufficient in measuring precision and single in measuring flow are solved. The sensor comprises a flow inlet cavity, a flow outlet cavity and a measuring pipeline composed of five parallel circular pipelines, the middle pipeline is a component measuring pipeline, and the four pipelines on the periphery are flow measuring pipelines. A probe is arranged in the middle of the component measuring pipeline, a heating resistance wire is arranged in the middle of the flow measuring pipeline, and temperature measuring resistance wires are asymmetrically distributed on two sides. The pipeline is made of aluminum, and fillets are arranged at the joints to optimize fluid flow. The heating resistance wire is a nickel chrome wire, the temperature measuring resistance wire is a platinum wire, the component measuring probe is made of a platinum film, and the surfaces of the platinum film and the platinum film are insulated. An improved Wheatstone bridge circuit is adopted for signal collection, and precision and protectiveness are improved.

The invention relates to the technical field of sensors, in particular to a rigid-flexible coupling rotating body deformation sensor based on full-flexible design and a testing method. The sensor comprises an annular main body; the annular main body is a closed ring formed by alternately connecting a plurality of rigid arcs and a plurality of flexible arcs; the rigid arc and the flexible arc are arranged in a manner of meeting dynamic balance; the plurality of micro data acquisition devices are respectively integrated on each rigid arc; the miniature data acquisition device comprises a Wheatstone bridge, a filtering module, a digital potentiometer, an analog-to-digital conversion module, a digital acquisition module, a single-chip microcomputer, a wireless signal sending module and a battery unit. The plurality of strain gauge groups are respectively arranged on the outer surface of each flexible arc; and the thickness of the flexible arc is uniform. According to the invention, deformation adaptation and high-sensitivity measurement are realized through a rigid-flexible arc alternating structure, and convenient monitoring under a rotation working condition is realized through a wireless communication miniature data acquisition device.

The invention discloses a piezoresistive pressure sensor chip and a preparation method thereof, and belongs to the technical field of micro-electromechanical systems. The piezoresistive pressure sensor chip comprises a substrate, the back of the substrate is etched with a cavity, the center of the cavity is provided with a cross-shaped mass block, and four hollow islands and four peninsula are arranged along the linear direction of the cross-shaped mass block; a plurality of groups of piezoresistor strips are arranged on the front surface of the substrate, each group of piezoresistor strips comprises a first piezoresistor strip component arranged close to the center and a second piezoresistor strip component arranged close to the side wall of the cavity, and the first piezoresistor strip component forms an internal Wheatstone bridge through a first metal lead group; the second piezoresistor strip component forms an external Wheatstone bridge through a second metal lead group; the glass is arranged on the substrate back. The piezoresistive pressure sensor chip can measure the pressure of a micro-pressure section, can bear high overload equivalent to a plurality of times of the full scale, and has the advantages of high sensitivity, good linearity, high precision, good dynamic performance and the like.

The invention provides an MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, forming a first pressure structure on the first substrate, and forming a second pressure structure on the second substrate; bonding the first pressure structure and the second pressure structure; the first substrate is removed, the first pressure structure and the second pressure structure jointly form a third pressure structure, the third pressure structure comprises a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a fifth electrode layer which are arranged at intervals from top to bottom, and a dielectric layer is formed between every two adjacent electrode layers; and cavities penetrating through the dielectric layers are formed in the dielectric layers. According to the scheme, the multiple electrode layers arranged from bottom to top are formed, the multiple electrode layers form the first capacitor, the second capacitor, the third capacitor and the fourth capacitor respectively, then the Wheatstone bridge is formed jointly, the measurement precision of the MEMS pressure sensor is improved, meanwhile, the plane size of the MEMS pressure sensor is reduced, and the integration level of the device is improved.

The invention discloses a micro electric field sensing device based on electrostatic force and piezoresistive effect coupling, which is characterized in that the micro electric field sensing device comprises a semiconductor film which is horizontally placed and can vertically and freely vibrate, and a metal film is arranged on the first surface of the semiconductor film; the second surface of the semiconductor film is connected with a boss structure and a substrate layer through a buried oxide layer, wherein the boss structure is formed by combining the peninsula-end cross beam and the arc-petal-shaped island; the periphery of the semiconductor film is connected with the fixed part of the device layer; the device layer is provided with a metal electrode area and four arc-shaped short beams, and the metal film is connected to the metal electrode area through the arc-shaped short beams; a plurality of ion implantation areas are embedded in the arc-shaped short beam, and groove structures are arranged among the ion implantation areas; and the ion implantation region forms a Wheatstone bridge structure through the metal electrode region. The miniature electric field sensing device has the advantages of being small in size, low in cost and power consumption, high in sensitivity, high in resolution, wide in linear range, high in structural stability and the like, and can be widely applied to the field of electric field sensing.

The invention relates to the technical field of pressure sensing, and further relates to a pressure sensor, a measuring range adjusting method and electronic equipment. The pressure sensor includes a Wheatstone bridge configured to convert an external pressure signal into an output voltage signal; the measuring range compensation circuit is connected with the Wheatstone bridge and is configured to adjust the measuring range of the pressure sensor based on the user demand and the output voltage signal; and the temperature compensation circuit is connected with the Wheatstone bridge and is configured to eliminate the temperature drift of the output voltage signal. According to the pressure sensor, the measuring range compensation circuit and the temperature compensation circuit are arranged in the pressure sensor, and a user can adjust the measuring range of the pressure sensor according to requirements through the measuring range compensation circuit. And the output voltage signal is finely adjusted through the temperature compensation circuit, so that the temperature drift of the output voltage signal can be eliminated, and the accuracy of a measurement result is improved.

The invention discloses a torque sensor and an implementation method thereof, the torque sensor comprises a composite elastomer and a sensing strain gauge, the composite elastomer comprises an outer fixing ring, an inner fixing ring, a spoke strain beam and a Y-shaped strain beam, the outer fixing ring and the inner fixing ring are of a concentric ring structure, the spoke strain beam is radially connected with the outer fixing ring and the inner fixing ring, and the Y-shaped strain beam is connected with the outer fixing ring and the inner fixing ring. The Y-shaped strain beams are arranged between the adjacent spoke strain beams, and the sensing strain gauges are printed on the Y-shaped strain beams and are connected to form a Wheatstone bridge. The anti-interference capability of the torque sensor can be improved, and the torque sensor can be widely applied to the technical field of sensors.

The invention discloses a linear beam double-island structure high-pressure pressure sensor chip with stress holes and a preparation method. The linear beam double-island structure high-pressure pressure sensor chip comprises a supporting layer, an insulating layer and a device layer which are arranged from bottom to top, a cavity is etched on the back of the supporting layer, a sensitive film is arranged right above the cavity, and a linear beam double-island structure is arranged on the sensitive film; the edge and the center of the straight beam double-island structure are respectively provided with four piezoresistor strips, the four piezoresistor strips are connected into a semi-open-loop Wheatstone bridge through five P-type heavily-doped silicon leads, five metal point electrodes are arranged at the center of the five P-type heavily-doped silicon lead areas, sealing rings are arranged on the outer sides of the peripheries of the five metal point electrodes, and the metal point electrodes are connected with the metal point electrodes through the P-type heavily-doped silicon leads. The adjacent P-type heavily-doped silicon leads and the sealing rings are separated by fine slits; according to the invention, the pressure bearing limit is effectively improved, the high range is ensured, excellent sensitivity and linearity performance are realized, the high pressure measuring capability of dozens of to hundreds of MPa is realized, the tolerable temperature is up to 400 DEG C, and the sensor is widely applied to the fields of petroleum, natural gas, chemical engineering, high-pressure equipment monitoring and the like.

The utility model discloses an MEMS sensor and an electronic atomization device. The MEMS sensor comprises a substrate, a base plate, a first polar plate, a second polar plate and a conductive contact. The first surface of the substrate is provided with a groove, the second surface of the substrate is provided with a Wheatstone bridge circuit, and a bridge arm of the Wheatstone bridge circuit comprises a piezoresistor; the substrate covers the groove to form a sealed cavity; the first polar plate is arranged on the bottom wall of the groove; the second polar plate is arranged on the substrate and is spaced from the first polar plate; the conductive contact is arranged on the substrate and / or the base plate and is electrically connected with at least one of the first polar plate and the second polar plate; the first pole plate and the second pole plate are configured to be capable of repelling or attracting each other under the power-on condition. Through the mode, the deflection of the strain film is always small, so that the problem that the deformation of the substrate does not have ideal linear change with the pressure is well improved, and the detection precision of the MEMS sensor is improved.

The invention discloses a magnetoresistive element and sensing equipment, and relates to the technical field of magnetic field measurement. The magnetoresistive element comprises at least one magnetoresistive sub-element, the magnetoresistive sub-element comprises a plurality of bridge arms, and the bridge arms are mutually coupled to form a Wheatstone bridge structure; at least one bridge arm comprises a magnetic resistance bridge arm and a compensation resistor, and the compensation resistor is coupled with the magnetic resistance bridge arm in parallel and used for enabling the resistance of the bridge arm to be lower than that of the magnetic resistance bridge arm; the magnetic resistance bridge arm comprises at least one magnetic tunnel junction, each magnetic tunnel junction has the same magnetic sensitive axis, and the magnetic sensitive axis is parallel or perpendicular to the free layer plane. The bandwidth of the magnetoresistive element is expanded by adjusting the resistance of the bridge arms in the magnetoresistive element, so that the magnetoresistive element can be further used for measuring electrical variables such as high-frequency current, and the magnetoresistive element has the advantages of being simple in structure and easy to implement.

The invention relates to a piezoresistive sensor. In particular, the present disclosure relates to piezoresistive sensor elements and piezoresistive pressure sensors that detect mechanical stresses acting on a membrane. The piezoresistive sensor element (100) comprises a substrate which, in operation, is subjected to a mechanical stress in response to a measured variable to be measured, a first array of at least four sensitive varistors (114), where the sensitive varistors (114) are arranged on the substrate and connected to form a first Wheatstone bridge for generating a first bridge signal, and a second array of at least four sensitive varistors (114) arranged on the substrate and connected to form a second Wheatstone bridge for generating a second bridge signal. A second array of at least four insensitive varistors (122), where the insensitive varistors (122) are connected to form a second Wheatstone bridge for generating a second bridge signal, where the stress sensitivity of the sensitive varistors (114) is higher than the stress sensitivity of the insensitive varistors (122), and wherein an output signal of the piezoresistive sensor element (100) is generated based on a difference of the first bridge signal and the second bridge signal.

The invention relates to the technical field of sensors, and provides a six-dimensional force and torque force sensor and a preparation method thereof.The six-dimensional force sensor is of a disc-shaped structure and comprises an outer supporting ring, an inner mass block and eight elastic beams connected between the outer supporting ring and the inner mass block; wherein the eight elastic beams comprise a first elastic beam and a second elastic beam which are alternately arranged around the inner mass block, the first elastic beam is a straight beam, the second elastic beam is a special-shaped beam, and a strain gauge preset on the main surface of each elastic beam responds to the strain of the elastic beam to generate a measurement signal; and the force and / or the torque applied to the inner mass block or the outer support ring can be determined according to the measurement signal. Due to the fact that the different elastic beams are different in shape and structure, the strain gauges are preset on the elastic beams of different types and positions, and the bridging mode is set, the output of each Wheatstone bridge is only sensitive to the force or the moment of force in the changed direction and is not sensitive to the force or the moment of force applied in other directions, and the decoupling capacity of the sensor structure is improved to the maximum degree.

A method for testing a sensor within an electronic circuit. The sensor includes a first sensor element and a first reference element in a first branch, and a second sensor element and a second reference element in a second branch of the Wheatstone bridge circuit, which is in parallel with the first branch. The Wheatstone bridge circuit includes first and second inputs for first and second reference signals, respectively, which are each connected to the branches. The first branch includes a first signal output, and the second branch includes a second signal output between the second sensor element and the second reference element. The method includes: opening the first or second switch; applying a predefined first and / or second reference signal(s); and evaluating a first or second useful signal as to whether damage to the sensor or an electrical connection between the sensor and the electronic circuit exists.

The invention discloses a device and a method for measuring the velocity field of an autoclave through hot-pressing wind speed. The device comprises a thermosensitive probe, a Wheatstone bridge, a lock-in amplifier, an NI multi-channel data acquisition card and a computer, the thermosensitive probe is used for instantaneously detecting the temperature of a placement point position and generating resistance fluctuation based on sensing temperature change; the Wheatstone bridge is formed by connecting a fixed resistor, a variable resistor and a thermosensitive probe, and is used for forming a series circuit with the lock-in amplifier; the lock-in amplifier is used for supplying power to the Wheatstone bridge and providing co-frequency voltage at the same time, so that resistance data of a thermosensitive probe in the Wheatstone bridge is converted into voltage data to be output; the NI multi-channel data acquisition card is used for acquiring in-phase component voltage signals output by the lock-in amplifier; the computer is used for processing the voltage data to obtain the average speed and the pulsation speed of the measurement point. According to the invention, the problems of limited precision, insufficient sensitivity and poor adaptability to the internal environment of the autoclave in the conventional gas speed measurement method are solved.

The invention relates to an integrated multi-mode tactile perception dexterous finger and a robot, and belongs to the technical field of robot sensing. Comprising a flexible printed circuit which comprises a Wheatstone bridge circuit, a switch chip, a microcontroller, a rigid sensing unit and a flexible triboelectric sensing unit electrode; the rigid sensing unit comprises a temperature and pressure sensing chip; the Wheatstone bridge circuit is connected with the switch chip, and the switch chip is connected with the microcontroller; the microcontroller is respectively connected with the sensing chip and the flexible friction electric sensing unit electrode; the dexterous finger shell comprises a first shell and a second shell; the first shell and the second shell are connected to form a containing cavity, and the flexible printed circuit is arranged in the containing cavity. And the flexible friction electric sensing unit friction layers are arranged on the surfaces of the first shell and the second shell and are connected with the rigid sensing units and the flexible friction electric sensing unit electrodes. The multi-mode touch sensing device has a multi-mode sensing function, can recognize various touch modes, adopts an integrated mode, and enhances reliability and sensing precision.

The invention discloses a pipeline integrated attitude control rocket engine thrust test structure and a working method thereof, and belongs to the technical field of sensing measurement and control. The testing structure is composed of a front fixed frame, a rear fixed frame, a rear movable frame, a middle-layer movable frame, a front movable frame, a straight connecting beam, a front-end inclined connecting beam, a propellant supply pipeline, a rear-end inclined connecting beam, a sensitive beam, a thin film sensor and a supporting thin beam. The thrust generated by rocket eruption enables the engine and the adapter frame to displace, then a series of structures from the front movable frame to the rear movable frame are driven to move step by step in the horizontal direction, strain function film layers of the four film sensors on the sensitive beam are deformed, and finally a differential Wheatstone bridge is formed by the circuit board for testing. According to the invention, the film sensor and the propellant supply pipeline are integrated on the test structure, and the S-shaped propellant supply pipeline, the circular truncated cone type movable frame structure and the layered overall structure are designed, so that the sensitivity of the test sensor is remarkably improved while the high rigidity of the test device is ensured.

Various techniques and apparatus permit fabrication of superconductive circuits. A superconducting integrated circuit comprising a superconducting stud via, a kinetic inductor, and a capacitor may be formed. Forming a superconducting stud via in a superconducting integrated circuit may include masking with a hard mask and masking with a soft mask. Forming a superconducting stud via in a superconducting integrated circuit may include depositing a dielectric etch stop layer. Interlayer misalignment in the fabrication of a superconducting integrated circuit may be measured by an electrical vernier. Interlayer misalignment in the fabrication of a superconducting integrated circuit may be measured by a chain of electrical verniers and a Wheatstone bridge. A superconducting integrated circuit with three or more metal layers may include an enclosed, matched, on-chip transmission line. A metal wiring layer in a superconducting integrated circuit may be encapsulated.

The invention discloses a low-self-heating constant-temperature-difference control circuit and method for compensating process errors of a thermal flowmeter. The low-self-heating constant-temperature-difference control circuit comprises a heating resistor, an environment temperature resistor, a control resistor, a starting resistor, a first potentiometer, a second potentiometer, first to sixth resistors, a triode, a first operational amplifier, a second operational amplifier, a third operational amplifier and a power source. The third operational amplifier controls a Wheatstone bridge composed of the first resistor, the second resistor, the heating resistor and the environment temperature resistor as main bodies to be in a balanced state through negative feedback regulation; the third resistor, the fourth resistor, the fifth resistor and the sixth resistor reduce the heating power of the environment temperature resistor through voltage division, resistance values of the first potentiometer and the second potentiometer are adjustable, and errors of resistance values and temperature coefficients generated in the machining process of the heating resistor and the environment temperature resistor can be compensated. According to the invention, the overheating temperature of the heating resistor can be more accurately controlled to be constant, so that the measurement precision is improved.

The invention discloses a temperature self-compensation Wheatstone bridge structure, and relates to the field of Wheatstone bridges, at least one group of sub-strain gauges which are separated from adjacent arms, are mutually compatible and are attached to the same area of the same elastic beam exist in a four-arm resistor of the Wheatstone bridge structure; the temperature resistance change trends of the compatible sub strain gauges tend to be the same; wherein each group of compatible two sub-strain gauges are closely attached to each other so that the two sub-strain gauges are located in the same area of the same elastic beam, so that the two closely attached sub-strain gauges generate homodromous temperature resistance variation, resistance temperature drift caused by local temperature difference of different arms is counteracted, and temperature self-compensation is realized. According to the invention, temperature compensation can be carried out on the local temperature difference of the force sensor, so that the measurement accuracy of the six-dimensional force sensor is improved.

The invention discloses a micropositioner hysteresis compensation driving control system and method based on strain gauges, and relates to the technical field of micro positioning control. The system comprises a micropositioner mechanical module, a displacement detection feedback module, a control module and a power amplifier module. In the mechanical module, a piezoelectric ceramic stack drives a moving table, and a first flexible hinge group and a second flexible hinge group are respectively used for guiding and transmitting driving force and are symmetrically arranged; the displacement detection feedback module outputs a voltage signal through a strain gauge adhered to the first flexible hinge and a Wheatstone bridge; the control module reversely deduces actual displacement according to a voltage signal and a strain-displacement linear relation, and a control signal is generated by comparing an instruction; and the power amplifier module converts the signal into a driving voltage to adjust the piezoelectric ceramic stack, so that closed-loop control is realized to suppress a hysteresis error. According to the invention, system integration is realized, cost and operation difficulty are reduced, and positioning precision and reliability are improved.

The utility model relates to the technical field of dynamic torque sensors, in particular to a dynamic torque sensor with a compact structure, which comprises a base internally provided with a mounting cavity. The elastic element penetrates through the mounting cavity; the two ends of the elastic element are fixed to the bearing assemblies respectively. Wherein a strain gauge is pasted on the elastic element, a bendable first circuit board is arranged on the strain gauge, a Wheatstone bridge circuit part, a voltage receiving module and a wireless signal transmitting module are arranged in the first circuit board, a second circuit board is arranged at the bottom of the base, and a signal receiving module and an external connecting port are arranged on the second circuit board; a supporting frame is further arranged on one side of the first circuit board, the supporting frame is fixed to the base, and a coil is wound on the supporting frame. The beneficial effects of the utility model are that by adopting the bendable flexible circuit board, the compact layout of the internal circuit of the sensor is realized, the installation space is saved, the bending characteristic of the flexible circuit board enables the sensor to adapt to a complex installation environment, and the convenience and the flexibility are improved.

The invention relates to the field of flexible sensors and structural health detection, in particular to a flexible full-printing strain sensing array for structural health detection, which comprises a sensing unit which adopts a full-bridge structure based on a Wheatstone bridge, four resistors of the sensing unit are arranged in a petal shape, a resistor on a diagonal line is mounted on the structure to sense strain, and a resistor on a diagonal line is mounted on the structure to sense the strain; the resistor on the other diagonal line is used for temperature compensation; the conductive electrode is prepared from printable and stretchable conductive silver paste through silk-screen printing; the excitation voltage source is used for providing current or potential difference for the four resistor branches of the Wheatstone bridge and driving the Wheatstone bridge to form a stable circuit structure; and the substrate layer is used as a carrier of the conductive electrode and the sensing unit and is made of a material with certain strain tensile property. The strain sensing array provided by the invention has the tensile capacity up to 40%, can realize multi-point detection at one position at the same time, and remarkably improves the resolution and precision of strain monitoring.

The invention provides a piezoresistive sensor, a piezoresistive sensor structure and a manufacturing method thereof, the piezoresistive sensor can simulate the magnitude of external pressure borne by the piezoresistive sensor structure by adjusting the voltage difference between two pressure simulation electrodes, and can simulate the magnitude of external pressure borne by the piezoresistive sensor structure by adjusting the driving voltage of the piezoresistive sensor structure. Therefore, the piezoresistive sensor can be used for generating excitation-response pairs required by the PUF technology, so that the PUF key technology can be realized on the piezoresistive sensor. The piezoresistive sensor structure comprises a first substrate and a second substrate arranged below the first substrate, the upper surface of the second substrate is provided with a cavity, and a sensitive film is formed in the first substrate area above the cavity; the Wheatstone bridge structure is arranged on the first substrate; a first pressure simulation electrode is arranged on the surface, facing the cavity, of the sensitive film; and a second pressure simulation electrode is arranged on the surface of the second substrate at the bottom of the cavity.