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1159 results about "Wheatstone bridge" patented technology

A Wheatstone bridge is an electrical circuit used to measure an unknown electrical resistance by balancing two legs of a bridge circuit, one leg of which includes the unknown component. The primary benefit of the circuit is its ability to provide extremely accurate measurements (in contrast with something like a simple voltage divider). Its operation is similar to the original potentiometer.

Six-dimensional force-torque sensor for realizing extension of measuring range

The invention discloses a six-dimensional force-torque sensor for realizing the extension of a measuring range. The six-dimensional force-torque sensor comprises a resilient body and straining plates which are arranged on the resilient body; the resilient body comprises four fixed platform, a central loading platform and four beam units, and each beam unit is arranged between two adjacent fixed platforms; each beam unit comprises an outer floating beam, an inner floating beam and a resilient beam, the outer floating beam is parallel to the inner floating beam, the outer floating beam and the inner floating beam form a pair of double-beam, two ends of the double-beam are respectively fixedly connected onto the side walls of the two fixed platforms, the resilient beam is vertical to the double-beam, one end of the resilient beam is fixedly connected onto the inner wall of the outer floating beam, and the other end of the resilient beam is fixedly connected onto one side wall of the central loading platform; the straining plates are divided into six groups and adhered onto the resilient beam; each group of straining plates form a Wheatstone bridge. By adopting the six-dimensional force-torque sensor, under the condition that the peripheral size of the sensor is not changed, the measuring range is effectively increased, and the rigidness of the sensor is improved.
Owner:SOUTHEAST UNIV

Integrated coil-biased giant magnetoresistance magneto-dependent sensor

The invention relates to an integrated coil-biased giant magnetoresistance magneto-dependent sensor. A traditional magneto-dependent sensor has a complex manufacturing process, low finished product rate of products and low sensing sensitivity. The integrated coil-biased giant magnetoresistance magneto-dependent sensor comprises a whetatone bridge consisting of four GMR (Giant Magnetoresistance) magneto-dependent resistors, an integrated soft magnetic material layer and an integrated bias coil, wherein the integrated soft magnetic material layer is of an annular structure; a pair of clearances is formed in the diameter direction of the integrated soft magnetic material layer; a pair of resistors at opposite positions on a whetatone bridge arm is placed in one clearance of the integrated soft magnetic material layer; another pair of resistors at the opposite positions on the whetatone bridge arm is placed in the other clearance of the integrated soft magnetic material layer; and the width of the pair of clearances is consistent. The integrated bias coil is encircled on the integrated soft magnetic material layer. The integrated coil biased giant magnetoresistance magneto-dependent sensor has the advantages of small size of the sensor, high sensitivity and favorable linearity.
Owner:HANGZHOU DIANZI UNIV

MEMS pressure sensor and manufacturing method thereof

The invention discloses an MEMS pressure sensor and a manufacturing method thereof. The MEMS pressure sensor comprises an MEMS pressure sensing chip, wherein the MEMS pressure sensing chip is arranged at a Wheatstone bridge formed on the crystallographic orientation of a monocrystalline silicon film (110) by four polycrystalline silicon resistors, the monocrystalline silicon film comprises a lower silicon wafer, an upper silicon wafer and a purification layer, a cavity body is arranged on the lower silicon wafer, the lower silicon wafer and the upper silicon wafer are bonded together by hot melt silicon-silicon, the surface of the upper silicon wafer is provided with a passivation layer, the polycrystalline silicon resistors are arranged on the upper silicon wafer by a diffusion process, and a conducting wire of a metal film and a press welding block are etched on the upper silicon wafer. The pressure sensor adopting a silicon-silicon bonding structure can be made in a very small size, the number of chips on each silicon wafer can be increased by 50% or more, the silicon-silicon bonding strength is higher, and the air tightness is better. The cost of the sensor is greatly lowered, and the performance is more stable and reliable. The sensor belongs to a pressure sensor with low cost and high performance and has very extensive application.
Owner:HENAN POLYTECHNIC UNIV
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