A
transistor with reduced base resistance self-biasing effect and its fabrication method. This relates to the field of
semiconductor technology. The
transistor includes: an epitaxial
wafer as a collector region; a first doped base region extending downwards from the upper surface of the epitaxial
wafer into its
body region, with a
doping type opposite to that of the epitaxial
wafer; multiple second doped emitter regions, each extending downwards from the top of the first doped base region into its
body region; the
doping type of the second doped emitter regions is opposite to that of the first doped base region but the same as that of the epitaxial wafer; and trenches are formed on the sides of each second doped emitter region, extending downwards from the top of the first doped base region. This invention reduces the emitter current
concentration effect, avoiding current concentration in this region under
high current conditions that could cause device
burnout.