547results about How to "Improve high frequency performance" patented technology

An electrical connector includes a body having a tongue, a row of first terminals insert-molded in the body, a depressed slot, and a positioning slot. The tongue includes a first surface having multiple receiving slots. Each first terminal has a contact portion accommodated in the receiving slot and exposed from the first surface. The first terminals include a pair of differential signal terminals and multiple non-high-speed terminals. The depressed slot is depressed from the first surface, located between contact portions of two differential signal terminals, and in communication with two adjacent receiving slots. The positioning slot is depressed from the first surface, located between contact portions of two adjacent non-high-speed terminals, or of adjacent non-high-speed terminal and differential signal terminal, and in communication with two adjacent receiving slots. The length of the positioning slot is less than the length of the depressed slot.

An MOS device is formed comprising a semiconductor layer of a first conductivity type, a first source/drain region of a second conductivity type formed in the semiconductor layer, and a second source/drain region of the second conductivity type formed in the semiconductor layer and spaced apart from the first source/drain region. The MOS device further comprises a gate formed proximate an upper surface of the semiconductor layer and at least partially between the first and second source/drain regions, and a shielding structure formed proximate the upper surface of the semiconductor layer and between the gate and the second source/drain region, the shielding structure being electrically connected to the first source/drain region, the shielding structure being spaced laterally from the gate and being non-overlapping relative to the gate. In this manner, the MOS device is substantially compatible with a CMOS process technology.

The invention discloses iron-based nanocrystalline soft-magnetic alloy with excellent high-frequency performance and a preparation method thereof. The expression of the alloy is FeaSibPcCuxMy, wherein a, b, c, x and y respectively represent the atomic percent content of corresponding compositions and satisfy the following conditions: 70<=a<=85, 5<=b<=15, 5<=c<=18, 0.0001<=x<=3, 0<=y<=5, a+b+c+x+y=100%, and M is one or more of Zr, Ti, Ta, Hf, Nb, V, W, Mo, Mn, Cr, Re, Zn, In, As, Sb, Bi, Ca, platinum group elements, rare earth elements, N, Sn, Ge, Ga and Al. The alloy is a nanocrystalline soft-magnetic alloy band prepared by employing a single-roller quick-cooling method under the conditions of high vacuum and argon protection. The alloy does not contain B elements, is good in soft magnetic property, high in thermal stability, low in high-frequency loss and low in magnetostriction coefficient.

An MOS device includes first and second source/drain regions of a first conductivity type formed in a semiconductor layer of a second conductivity type proximate an upper surface of the semiconductor layer, the first and second source/drain regions being spaced apart relative to one another. A non-uniformly doped channel region of the first conductivity type is formed in the semiconductor layer proximate the upper surface of the semiconductor layer and at least partially between the first and second source/drain regions. An insulating layer is formed on the upper surface of the semiconductor layer. A first gate is formed on the insulating layer at least partially between the first and second source/drain regions and above at least a portion of the channel region, and at least a second gate formed on the insulating layer above at least a portion of the channel region and between the first gate and the second source/drain region. The second gate has a length which is substantially greater than a length of the first gate, the first and second gates being electrically isolated from one another.

A monolithically integrated semiconductor device comprises: a hetero-junction bipolar transistor having at least an electrode contact layer which contacts directly with at least one of collector, base and emitter electrodes; and at least a passive device having at least a passive device electrode and at least a resistive layer, wherein the electrode contact layer and the resistive layer comprise the same compound semiconductor layer.

High frequency performance of transistor designs is enhanced and manufacturing yield improved by removing and reducing sources of parasitic capacitance through combinations of processes from different technologies. After formation of collector, base and emitter regions on a substrate and attachment of a second substrate, the original substrate is wholly or partially removed, the inactive collector area is removed or rendered semi-insulating and wiring and contacts are made from the original back side of the chip. Dielectric material used in the manufacturing process can be removed to further reduce capacitance. The high frequency transistors can be bonded to CMOS chips or wafers to form BICMOS chips.

The invention discloses a preparing method of a metal magnetic powder core. The preparing method includes the following steps that (1) master alloy is melt through a vacuum induction furnace, and an alloy thin belt is obtained through a quick quenching device; (2) ball milling is conducted on the thin belt; (3) annealing is conducted on powder; (4) particle size distribution is conducted on the annealed powder; (5) passivant is added into the distributed powder to conduct passivating on the powder, and then a binding agent and an insulating agent are added into the powder to conduct insulating bonding and wrapping on the powder; (6) a lubricating release agent is then added, the mixture is mixed, and compression moulding is conducted; (7) annealing is conducted on a sample obtained through compression moulding, and the sample is cooled along with the furnace, and spraying and coating are conducted to obtain the target product. According to the preparing method, the master alloy contains an appropriate number of alloy elements, so that the alloy processing performance is improved; the alloy powder and an insulating medium are mixed and pressed to be the magnetic powder core, so that eddy-current loss under a high frequency can be greatly reduced; meanwhile, the problem that alloy materials are limited in use due to single shapes is solved through shape diversity of the magnetic powder core.

The invention discloses an insulative adhesive for preparing a metallic and soft magnetic composite material and a using method thereof. The insulative adhesive disclosed by the invention is a nano-modified organic silicon resin insulative adhesive which comprises organic silicon resin and an inorganic nano dispersion liquid. The insulative adhesive greatly improve the heat-resisting temperature of the organic silicon resin and improve the mechanical strength of a magnetic powder core, is reasonable in component selection and good in using effect and has a good insulative adhering effect to Fe-based, nickel-based and metallic soft magnetic powder of other metals. The magnetic powder core prepared by the insulative adhesive prepared by the invention has excellent magnetic performance and mechanical performance.

The characteristics of a shield wall that prevents the mutual interference of the noise between components are improved by lowering the resistance of the shield wall. A high-frequency module 1a includes a wiring board 2, a plurality of components 3a to 3e mounted on an upper surface 2a of the wiring board 2, a sealing resin layer 4 stacked on the upper surface 2a of the wiring board 2 to seal the components 3a to 3e, and a shield wall 5 disposed between the adjacent components in the sealing resin layer 4. A part of the shield wall 5 is constituted of metal pins 5a standing on the upper surface 2a of the wiring board 2.

Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second of the STI trenches; for the capacitor, implanting a second cell well having a second polarity in an area of a third of the STI trenches; removing dielectric material from the third STI trench; forming a gate stack having a first portion located between the first and the second of the STI trenches and a second portion located over and extending into the third trench; and performing a source/drain implant of the same polarity as the second cell well, thereby forming a FET in the first cell well, and a capacitor in the second cell well. The second polarity may be opposite from the first polarity. An additional implant may reduce ESR in the second cell well.

A semiconductor device and a fabrication method of the semiconductor device, the semiconductor device including: a substrate; a nitride based compound semiconductor layer placed on the substrate and doped with a first transition metal atom; an aluminum gallium nitride layer (Al_xGa_1-xN) (where 0.1<=x<=1) placed on the nitride based compound semiconductor layer; a nitride based compound semiconductor layer placed on the aluminum gallium nitride layer (Al_xGa_1-xN) (where 0.1<=x<=1) and doped with a second transition metal atom; an aluminum gallium nitride layer (Al_yGa_1-yN) (where 0.1<=y<=1) placed on the nitride based compound semiconductor layer doped with the second transition metal atom; and a gate electrode, a source electrode, and a drain electrode which are placed on the aluminum gallium nitride layer (Al_yGa_1-yN) (where 0.1<=y<=1). Accordingly, piezo charge is inactivated, leakage current and current collapse are reduced, high frequency characteristics can be improved by obtaining a high resistivity semiconductor layer, and stable high frequency performance can be obtained.

The invention discloses a preparation method for electromagnetic wave interference resistant iron silicon aluminum nickel alloys. The invention comprises the following steps: firstly, ferrum, aluminum, silicon and nickel with a purity more than 99.9 weight percent are taken as raw materials and laid into a medium frequency vacuum induction furnace for smelting, and a master alloy is obtained; secondly, the master alloy after smelting is laid into a quick quenching device; an alloy ingot casting is quickly poured on a water-cooling roll wheel which rotates at high speed after arc remelting under the protection of high purity inert gases, and a quickly condensed sheet band or a quickly condensed sheet is obtained; thirdly, the sheet band or the sheet is laid into a ball mill for ball milling flat processing, and flat powder is obtained; fourthly, the flat powder is laid into a stainless steel tube which is then vacuumized and filled with high purity inert gases for protection, and then the stainless steel tube is laid into a tube furnace for heating, heat preservation and cooling along with the furnace; fifthly, the flat powder and binding agents are mixed and milled for processing the sheet. The preparation method for the electromagnetic wave interference resistant iron silicon aluminum nickel alloys adds adequate nickel into Sendust alloys, thereby the processability of the alloys is improved; the ball milling time is reduced; the cost of industrial production is saved; simultaneously the magnetic conductivity can be improved and the magnetic shielding effect can be improved.

The present application discloses a method for data transmission in a radio cell of a mobile terminal. The radio cell includes an auxiliary carrier in a low frequency band and at least one master carrier in a high frequency band, the method including: the mobile terminal achieving downlink synchronization with the radio cell through the auxiliary carrier in the low frequency band, and after achieving the downlink synchronization, obtaining configuration information of the radio cell, and transmitting data by using the master carrier and/or the auxiliary carrier according to the configuration information. The present application also provides a mobile terminal. By using the present application, radio cell coverage and transmission performance may be improved.

A high voltage AC/DC or DC/AC power conversion system including a voltage source converter with at least two series-connected converter valve bridges, at least two reactors, where each of the reactors is connected to one of the AC phase terminals of the at least two bridges and at least one transformer connected to an AC supply voltage. In order to block a DC voltage from the at least one transformer, one of at least two capacitors is connected in series with each of the at least two reactors and is connected between the corresponding reactor and the at least one transformer.

The invention discloses an ultra-thin telephone receiver. A driving mechanism of the ultra-thin telephone receiver comprises an armature section and a coil section, wherein the armature section is E-shaped and comprises a base portion, two wing portions and a middle portion, the base portion, the two wing portions and the middle portion are formed in an integrated mode, the middle portion comprises a root part located on the base portion, the root part extends forward to form a vibrating diaphragm part, and the coil section is arranged on the root part in a sleeved mode at intervals. A shell of the ultra-thin telephone receiver comprises an upper shell and a lower shell, wherein the upper shell is arranged at the top of the driving mechanism in a covered mode, and comprises a cover plate and cover edges which are formed by extending downward from the periphery of the cover plate, a first magnet is fixedly connected to the inner wall, covered at the top of the vibrating diaphragm part, of a section of the cover plate, the upper shell is made of magnetically soft alloy, the lower shell is arranged at the bottom of the driving mechanism in a covered mode relative to the upper shell, a second magnet is fixedly connected to the inner wall of the lower shell relative to the first magnet, the lower shell is made of magnetically soft alloy, and a sounding hole is formed in the upper shell or the lower shell. According to the ultra-thin telephone receiver, the thickness of an existing telephone receiver is reduced to the largest extent, and the ultra-thin telephone receiver is more suitable for the structure of a mobile phone with a narrow frame or a mobile phone which is nearly frameless.