64results about How to "Improve high frequency performance" patented technology

The invention relates to the technical field of soft magnetic ferrite materials, and particularly discloses a NiCuZn-MgO composite material and a preparation method thereof. The NiCuZn-MgO composite material comprises main components and additives, and the main components comprise the following components in percentage by weight: 36-72 wt% of Fe2O3, 13-16 wt% of ZnO, 6-9 wt% of NiO, 3-6 wt% of MgO and the balance of CuO; based on the total weight of the main components, the additive comprises the following components in percentage by weight: 0.5 to 1.5 weight percent of Bi2O3, 0.3 to 1.5 weight percent of SiO2 and 0.3 to 1.5 weight percent of CaO. According to the NiCuZn-MgO composite material prepared by the invention, the cost of soft magnetic ferrite can be reduced, and the NiCuZn-MgO composite material has high magnetic conductivity and high Bs.

An electrical connector includes a body having a plurality of terminal holes and a plurality of terminals housed within corresponding terminal holes. The body has an upper surface and a lower surface, with the terminal holes penetrating both surfaces. Each terminal includes a first terminal piece and a second terminal piece, independent of each other. The first terminal piece includes a first fixing portion fixed to the body and a first elastic arm extending upward from the upper surface of the body. The first elastic arm has a chip contact portion and a first overlapping portion extending downward. The second terminal piece includes a second fixing portion fixed to the body and a second overlapping portion extending upward. When the first elastic arm is forced to move downward, it causes the first overlapping portion to move until the first overlapping portion contacts the second overlapping portion, forming a conductive path. The terminal of the present invention is composed of two independent terminal pieces and can form two conductive paths, improving high-frequency performance while ensuring mechanical performance.

The utility model relates to a gold wire bonding structure used for a 1.6 T silicon optical module. A first gold ball and a second gold ball are planted on a first RF bonding pad side by side along the width direction of the first RF bonding pad according to a predetermined interval, and a third gold ball is planted on a second RF bonding pad at a position corresponding to the second gold ball; and the non-ball-mounting area on the second RF bonding pad is welded with one end of the gold wire, and the other end of the gold wire is firstly pulled up to be welded with the first gold ball, then pulled up to be welded with the third gold ball in a non-breaking state, and finally pulled up to be welded with the second gold ball in a non-breaking state. According to the 1.6 T silicon optical module, a first RF bonding pad in a gold wire bonding structure is located on a PCB, and a second RF bonding pad in the gold wire bonding structure is located on a silicon optical chip. According to the scheme, two gold balls are planted on the first RF bonding pad and one gold ball is planted on the second RF bonding pad, so that the number of gold wires is increased from two to three, and the high-frequency performance is effectively improved.

The utility model discloses a silicon carbide MOSFET device comprising at least one cell, and each cell comprises a silicon carbide substrate of a first doping type; an epitaxial layer of a first doping type; the well regions of the second doping type are located in the epitaxial layer, and JFET regions are arranged between the adjacent well regions; the source region of the first doping type is located in the well region; the contact region of the second doping type is located in the well region and is adjacent to the source region; the field oxide layer is located on the surface of the epitaxial layer and located above the JFET region; the gate oxide layer comprises a first gate oxide layer and a second gate oxide layer, and the first gate oxide layer and the second gate oxide layer are located on the two sides of the field oxide layer respectively and are adjacent to the field oxide layer respectively; the gate conductors comprise a first gate conductor and a second gate conductor, the first gate conductor covers the surface of the first gate oxide layer and part of the surface of the field oxide layer, the second gate oxide layer covers the surface of the second gate oxide layer and part of the surface of the field oxide layer, and the first gate conductor and the second gate conductor are separated from each other.

The invention discloses a novel high-speed coaxial connector. The connector comprises an outer conductor; an insulator having a mounting hole penetrating the front and rear ends; the central terminal is fixed in the mounting hole in a penetrating manner; the central terminal comprises a contact area located at the head and a riveting line area located at the tail, and the riveting line area is used for being riveted and fixed with a metal wire core of a coaxial line and forming electrical conduction; on the premise that the size of a matching interface is kept unchanged, the material thickness of the wire riveting area is larger than that of the contact area, so that after the wire riveting area and a small-size metal wire core are riveted and fixed, the riveting cross section area is large, and a cross section cavity is reduced to compensate impedance mutation of other areas, so that the impedance matching of the whole product is balanced, and the purpose of improving the high-frequency performance is achieved; under the condition that the inner diameter of the outer conductor in the high-speed coaxial connector is kept unchanged, the high-speed coaxial connector is suitable for wires with smaller wire diameters, required high-frequency performance is achieved, signal data can be transmitted at a high speed, and the problem of insufficient high-frequency performance caused by the wires is solved.

The invention discloses a satellite internet integrated plane millimeter wave oscillator based on a glass-based material, and belongs to the field of microwave circuit design. The oscillator comprises a DGS resonance module based on a glass substrate, two paths of same sub-oscillator modules, duplexer modules and a combiner module, wherein the two paths of sub-oscillator modules share the same DGS resonance module based on the glass substrate, and outputs of the two paths of sub-oscillator modules are respectively connected with the two duplexer modules; and the output with higher frequency is synthesized by the combiner module to form total output. The DGS resonance module adopts a glass-based process and has the advantages of miniaturization, low loss and low cost; the two sub-oscillators share one resonator module, strong coupling is achieved, and phase noise can be optimized; the duplexer module separates fundamental waves from second harmonics, so that good matching can be realized, and spurious suppression is improved. The LED lamp is easy to process, low in cost, good in heat dissipation performance and capable of effectively achieving miniaturization and integration.

The present invention provides a structure and method for improving the frequency characteristics of a lithium niobate modulator chip on a quartz substrate. The structure includes: a carrier chip; a coplanar waveguide structure with ground arranged on the upper surface of the carrier chip and a coplanar waveguide structure without ground arranged on the upper surface of the modulator chip; a core group interconnection structure respectively arranged at both ends of the coplanar waveguide structure with ground; a metal grounding layer arranged on the lower surface of the carrier chip; a plurality of metal grounding holes respectively arranged on the first grounding area; a plurality of grounding micro-bumps respectively arranged on the first grounding area and / or the second grounding area; input electrodes and output electrodes arranged at both ends of a traveling wave transmission line; input micro-bumps arranged on the input electrode and / or the input end of a broadband transmission line; output micro-bumps arranged on the output electrode and / or the output end of a broadband transmission line; the upper surface of the modulator chip is arranged on the upper surface of the carrier chip. The present invention can improve the grounding continuity, thereby improving the chip operating frequency.

The present invention discloses a cable connector assembly and an assembly method thereof, wherein the cable connector assembly comprises an electrical connector, a cable electrically connected to the electrical connector, and a shell arranged outside the electrical connector and the cable, wherein the electrical connector comprises a butt joint, and a metal shell arranged outside the butt joint and the cable, wherein the cable comprises a plurality of core wires, an inner shielding layer wrapped outside the core wires, a metal braided layer wrapped outside the inner shielding layer, and an outer sheath wrapped outside the metal braided layer, wherein the metal braided layer comprises an outer turning portion turned outward to the outside of the outer layer, and further comprises a metal inner ring sleeved between the metal braided layer and the outer sheath, wherein the metal shell is electrically connected to the metal inner ring through the outer turning portion. The cable connector assembly of the present invention has good high frequency performance and anti-electromagnetic interference capability.

The utility model relates to the technical field of antenna structures, and provides a broadband multi-branch dual-frequency antenna and radio frequency equipment, and the broadband multi-branch dual-frequency antenna comprises a dielectric substrate; the antenna main body unit is arranged on the dielectric substrate, and the antenna main body unit comprises a low-frequency branch knot and a high-frequency branch knot which are connected with each other; the grounding unit is connected with the antenna main body unit, and a gap structure is arranged between the grounding unit and the antenna main body unit; the first parasitic branch knot is connected with the grounding unit and is adjacent to the antenna main body unit, the bandwidth of the broadband multi-branch-knot dual-frequency antenna is expanded, and the matching characteristic of the antenna is improved.

The invention relates to a filter for a vehicle-mounted driving motor system, which comprises a common-mode magnetic ring group, a front noise filtering capacitor bank, a rear noise filtering capacitor bank, a high-voltage copper bar and a support, and is characterized in that the common-mode magnetic ring group is mounted in the support, and the front noise filtering capacitor bank and the rear noise filtering capacitor bank are mounted on one side of the support; the high-voltage copper bar passes through the common-mode magnetic ring group; the common-mode magnetic ring group comprises a primary magnetic core, a secondary magnetic core and a tertiary magnetic core; and the front noise filtering capacitor bank and the rear noise filtering capacitor bank respectively comprise an X capacitor, a Y capacitor and a damping resistor. Compared with the prior art, the system has the advantages that the topological structure has more expansibility, the magnetic cores of the common-mode magnetic ring group are selected according to the requirements of different driving motor systems on electromagnetic compatibility, and the application range is wide; the front noise filtering capacitor bank and the rear noise filtering capacitor bank are integrated into a two-in-one filter plate, so that the problem of ESL (Electronic Security Language) caused by overlong lead terminals is effectively solved; and a shielding cabin is formed by the filter through the shielding cover, so that a space coupling path is cut off, and the like.

The utility model discloses a 90-degree FAKRA improved metal rear cover, which comprises a shielding shell, a mounting hole is arranged on the shielding shell, a rear cover assembly is arranged in the mounting hole, the rear cover assembly comprises a first baffle plate, a connecting piece, a second baffle plate, a positioning block and a boss, the first baffle plate is fixedly connected to the top end of the connecting piece, the second baffle plate is fixedly connected to the bottom end of the connecting piece, and the positioning block is fixedly connected to the bottom end of the connecting piece. The second baffle is fixedly connected with a positioning block, and the lower surface of the second baffle is fixedly connected with a boss; a wire inlet hole is formed in the mounting hole, and a groove is formed in the position, corresponding to the wire inlet hole, of the lower surface of the boss; according to the rear cover assembly of the utility model, the boss is additionally arranged on the second baffle plate as the extension section to replace the original shielding layer of the wire end, so that the high-frequency performance is improved, and the positioning block is additionally arranged on the second baffle plate and is matched with the positioning groove in the shielding shell, so that a good positioning and guiding function can be realized; and installation errors of the rear cover assembly are avoided.

A semiconductor device (100) for controlling an electric current flowing between a source terminal (102) and a drain terminal (104) and a method for forming such a device are disclosed. The semiconductor device is formed from a layer stack of GaN layers, wherein a vertical junction field effect transistor JFET structure (120) and a lateral high electron mobility transistor HEMT structure (130) are provided to control the electric current.

This utility model discloses a terminal module and an electrical connector. The electrical connector includes: a terminal module having a housing and mounted on the housing; the terminal module having an insulator and signal terminals fixed to the insulator; the contact portion of the signal terminal is connected to a mating member; the wiring portion is used for cable connection, and the cable has a shielding layer; a shielding shell covers the periphery of the signal terminals; the shielding shell includes a first part and a second part, and the first part or the second part is directly or indirectly electrically connected to the shielding layer; the first part has a first fixing part and a first grounding spring arm connected to the mating member; the second part has a second fixing part fixed to the first fixing part and a grounding conductive part contacting the first part to form a grounding connection; the distance between the grounding conductive part and the mating portion of the first grounding spring arm is less than the distance between the first fixing part and the mating portion of the first grounding spring arm, so that the noise current can flow to the ground reference plane through multiple return paths, reducing crosstalk.

An electric connector comprises two rows of conductive terminals which are longitudinally arranged and transversely opposite to each other, two insulating bodies which hold the two rows of conductive terminals to form two terminal modules, and a shell which is held outside the insulating bodies. Each row of conductive terminals comprises a holding part which is held on the insulating bodies, a contact part which is formed by extending upwards from the holding part, and a welding part which extends downwards from the holding part, each row of conductive terminals comprises a signal terminal and a grounding terminal, and the electric connector also comprises longitudinally extending metal plate bodies which are respectively held on the two insulating bodies. The grounding terminal in each row of conductive terminals is formed by integrally extending from the metal plate body, the metal plate body is located between the two rows of conductive terminals in the transverse direction, and the two metal plate bodies are welded to each other so that the two terminal modules can be fixed. The grounding terminals of each row of conductive terminals are connected in series through the metal plate body, the metal plate body is arranged between the two rows of conductive terminals, the high-frequency performance of the electric connector is good, and the metal plate bodies in the two terminal modules are welded with each other, so that the two terminal modules are fixed reliably.

The present invention discloses an AC-coupled level shifter, belonging to the field of integrated circuits. In order to speed up the level conversion speed of high-speed signals, in the AC-coupled level shifter of the present invention, the input signal is connected to the gate of the first NMOS tube and the gate of the first PMOS tube, the source of the first PMOS tube is connected to the first device working voltage, the drain of the first PMOS tube is connected to the drain of the first NMOS tube, and the source of the first NMOS tube is connected to the first common ground terminal voltage; the drain of the first PMOS tube is also connected to the gate of the second NMOS tube and the gate of the second PMOS tube; the source of the second PMOS tube is connected to the second device working voltage, the drain of the second PMOS tube is connected to the drain of the second NMOS tube, and the source of the second NMOS tube is connected to the second common ground terminal voltage; the drain of the second PMOS tube leads to the output signal; the gate of the first NMOS tube is connected to the first end of the capacitor, and the drain of the second PMOS tube is connected to the second end of the capacitor. The present invention has the advantages of low delay and low duty cycle loss.

An electric connector comprises an insulator and a plurality of terminals, the insulator comprises an upper surface, a lower surface and terminal grooves penetrating through the upper surface and the lower surface, and the terminals are arranged in the corresponding terminal grooves one by one; the plurality of terminals comprise a row of grounding terminals arranged along a first direction and a plurality of functional terminals, each functional terminal comprises a holding part and an elastic arm extending from the holding part, and the plurality of functional terminals positioned on one side of the row of grounding terminals form a first functional area; the plurality of functional terminals located on the other side of the row of grounding terminals form a second functional area, and the elastic arms of the functional terminals of the first functional area and the second functional area extend from the corresponding holding parts in the direction close to or away from the grounding terminals. According to the utility model, the functional terminals located in the first and second functional areas can perform good signal shielding through the grounding terminals, and the electric connector has good high-frequency performance.

The application relates to a source adjustable resistance circuit for a high-speed differential amplifier, belonging to the technical field of high-speed analog and radio frequency integrated circuits, comprising a high-speed differential amplifier, a degeneration resistance unit and a control unit; the degeneration resistance unit is composed of a first MOS transistor; the source and the drain of the first MOS transistor are respectively connected to two source nodes of a differential pair transistor of the high-speed differential amplifier, serving as source degeneration resistance thereof, and the gate voltage of the first MOS transistor is generated by the control unit; the control unit is used for generating the gate control voltage of the first MOS transistor. The application replaces a large resistance array with a single MOS transistor, greatly reduces the area, greatly reduces the chip cost, significantly reduces the parasitic capacitance of the degeneration node to the ground, and improves the amplifier bandwidth.

The utility model relates to flexible circuit technical field, concretely for a kind of flexible circuit substrate, comprising: PI base material, PI base material is provided with functional layer, functional layer includes the buffer layer of TiO2 or SiO2, CrxOy material setting on PI base material, sputter Cu layer setting on buffer layer and electroplated copper layer setting on sputter Cu layer, through the setting of the buffer layer of TiO2 or SiO2, CrxOy material, compared with the nickel-chromium alloy layer set in traditional technology, need not secondary etching, reduce production procedure, can reduce material impedance, improve material performance, reduce production cost, reduce the generation of etching waste liquid, more environmental protection.

The invention provides a chip attenuator and a preparation method thereof, and belongs to the technical field of attenuators. The resistance layer comprises a first resistor, a third resistor and a second resistor which are sequentially connected in series, a fourth resistor and a sixth resistor which are connected in parallel between the joint of the first resistor and the second resistor and the ground, and a fifth resistor and a seventh resistor which are connected in parallel between the joint of the second resistor and the third resistor and the ground, and the resistance value of the first resistor is equal to that of the second resistor; the resistance value of the third resistor is the sum of the resistance value of the first resistor and the resistance value of the second resistor, and the resistance values of the fourth resistor, the fifth resistor and the seventh resistor are equal. The chip attenuator manufactured by the invention can meet the requirements of miniaturization, high attenuation and wide frequency band.

The utility model relates to a cable, in particular to a high-power low-loss radio frequency cable for a chariot radar. The utility model aims to provide the high-power low-loss radio frequency cable for the chariot radar, and the cable has the functions of low attenuation, high power and external electromagnetic interference resistance, and has the characteristics of light weight and high flexibility. According to the technical scheme, the high-power low-loss radio frequency cable for the chariot radar is characterized by comprising a cable core, an inner shielding layer, a middle layer, an outer shielding layer and an outer protection layer, the cable core comprises a conductor, and a first insulating layer, a second insulating layer and a third insulating layer which sequentially wrap the conductor from inside to outside.

The invention discloses a terminal assembly, a connector, a male end connector, a female end connector and a connector assembly. The terminal assembly includes: an outer terminal including a cylindrical body; an insulator provided in the outer terminal; a center terminal disposed in the insulator; and a cable having a conductor core and a shield layer. The cylindrical main body is provided with a welding part, the welding part is sleeved and welded on an exposed shielding layer of the cable, and the center terminal is electrically connected to an exposed conductor core of the cable. According to the connector, the outer terminal is welded on the shielding layer of the cable, so that the size of the connector is reduced, the manufacturing cost of the connector is reduced, and the manufacturing efficiency of the connector is improved; according to the invention, the central terminal can be connected to the cable conductor through a crimping or welding process, so that the mechanical performance is improved; in addition, contact resistance between the outer terminal and the shielding layer and contact resistance between the center terminal and the conductor core can be reduced, and the high-frequency performance of the connector is greatly improved.

The present invention belongs to the technical field of electroacoustic conversion. The present invention provides a speaker module for a mobile terminal provided with a sound outlet. The speaker module includes a speaker box, the speaker box includes a sound output opening for side sound emission, the speaker module also includes a horn connected to the sound output opening, the horn is a hollow structure, the sound output opening includes a first sound output opening arranged in the horizontal axis direction of the speaker box and a second sound output opening arranged in the longitudinal axis direction of the speaker box, the horn includes a first section connected to the first sound output opening, a second section bent and extended from one end of the first section away from the first sound output opening, and a third section, the end of the second section away from the first section is used to connect to the sound outlet; the two ends of the third section are respectively connected to the second sound output opening and the second section. Compared with the related art, the present invention can achieve multi-stage resonance, small volume, easy to widen the frequency band range and easy to adapt to mobile terminals.

This application provides an LCP thin film assembly, its preparation method, and its application. The preparation method includes: surface modification of the LCP thin film to obtain an activated surface rich in carboxyl and hydroxyl groups, followed by hot pressing of the LCP thin film with the activated surface; the LCP thin film assembly includes a multilayer LCP thin film bonded by hot pressing, wherein no adhesive is contained between any two adjacent LCP thin films, and the interface region between any two adjacent LCP thin films forms a homogenized molecular-level bonding layer through melt recrystallization; the preparation method of this application introduces active functional groups through surface modification methods such as alkaline hydrolysis and acid activation, achieving interlayer chemical bonding during hot pressing, significantly improving interlayer bonding strength, avoiding the risks of bubbling and delamination, and retaining the inherent excellent high-frequency performance and dielectric properties of the LCP thin film; this preparation method, when applied to the preparation of LCP thin film probe cards, can produce thin film probe cards with excellent interlayer bonding strength and high-frequency performance.

The utility model discloses a sinking plate type FAKRA connector, and relates to the field of connectors, the sinking plate type FAKRA connector comprises a center pin, a medium body installed on the center pin, an outer conductor installed on the medium body and a plastic shell installed on the outer conductor, the inner wall of the outer conductor and the outer wall of the medium body form a first clamping position, and the inner wall of the outer conductor and the outer wall of the medium body form a second clamping position. The inner wall of the medium body and the center pin form a second clamping position, and the outer wall of the medium body and the inner wall of the outer conductor form a third clamping position. The connecting structure has the effects of enhancing the connecting stability and reliability and improving the convenience and rapidness of overall assembly.

The present invention relates to a gallium nitride device driving circuit with integrated overvoltage protection, comprising: a driving module, a feedback control module and a boost conversion module connected in sequence; the boost conversion module is used to output the output voltage of the driving circuit, and the feedback voltage output terminal of the boost conversion module feeds back the output voltage to the feedback control module; the feedback control module is configured to compare the output voltage with a preset voltage value, and when the output voltage is higher than the preset voltage value, generate a low-level signal and feed it back to the driving module; the driving module is configured to disconnect the internal circuit of the boost conversion module when receiving the low-level signal fed back by the feedback control module. The present invention can realize overvoltage protection of the driving circuit, and solve the problem in the prior art that the integrated driving circuit does not integrate a protection module, which easily causes the output voltage to exceed the rated value, thereby causing device damage.

This invention provides a packaging structure. In the packaging structure, the lead frame includes at least two solder pads; the back of the chip is mounted on the lead frame, and the front of the chip has multiple solder pads. At least a portion of the solder pads of the lead frame are electrically connected to the solder pads of the chip via bonding wires; a passive device is disposed between and electrically connected to the two solder pads of the lead frame; a molding compound encapsulates the chip and bonding wires, and covers at least a portion of the surface of the solder pads and at least a portion of the surface of the passive device. This avoids mounting the passive device on the PCB outside the packaging structure, significantly reducing PCB layout space, greatly shortening the interconnection distance between the passive device and the chip, reducing the current loop area, reducing parasitic inductance of high-frequency signal paths, reducing magnetic field radiation (i.e., reducing electromagnetic interference), improving high-frequency performance, and reducing coupling with external interference, thus improving electromagnetic compatibility.

The utility model discloses an electric connector, which comprises an insulating seat body, a first row of terminals and a second row of terminals are arranged on the insulating seat body and are positioned on the same side of a slot along the left-right direction; the first row of terminals comprises first grounding terminals and first signal terminals which are alternately arranged in the front-back direction, and the second row of terminals comprises second signal terminals which are arranged corresponding to the first grounding terminals in the up-down direction and second grounding terminals which are arranged corresponding to the first signal terminals in the up-down direction. The first grounding shielding part of the first grounding terminal abuts against the first grounding arm so as to form a closed ring together with the first grounding bending part and the first grounding contact part to shield the second signal terminal in the vertical direction. The second grounding shielding part of the second grounding terminal abuts against the second grounding arm to form a closed ring together with the second grounding bending part and the second grounding contact part so as to shield the first signal terminal in the vertical direction, and the high-frequency performance of the electric connector is improved.

The optical module disclosed herein includes: a circuit board; a lens assembly connected to the circuit board at its bottom; the bottom of the lens assembly and the circuit board forming a receiving cavity; a light emitting assembly located within the receiving cavity; the light emitting assembly electrically connected to the circuit board, the light emitting assembly including a high-frequency electrode for inputting high-frequency signals; and a matching resistor assembly located within the receiving cavity and on the side of the light emitting assembly. The matching resistor assembly includes: a first substrate connected to the circuit board at its bottom, and a first pad and a second pad formed on its top; the first pad being wire-connected to the high-frequency electrode, and the second pad being wire-connected to the circuit board; and a matching resistor disposed on the top of the first substrate; a first end of the matching resistor being electrically connected to the first pad, and a second end of the matching resistor being electrically connected to the second pad. The optical module disclosed herein facilitates the solution to the problem of insufficient bandwidth in VCSELs.

The invention discloses a multilayer high-frequency PCB and a preparation method thereof, and belongs to the technical field of PCB preparation. The multilayer high-frequency PCB is composed of an inner-layer board, a heat dissipation layer and an outer-layer board, the inner-layer board, the heat dissipation layer and the outer-layer board are sequentially arranged from inside to outside, the surface of the inner-layer board is covered with a layer of composite film, the heat dissipation layer is made of composite aerogel materials, and all the layers are fixed through the hot pressing technology. The multilayer high-frequency PCB prepared by the method has excellent high-frequency performance and heat dissipation performance.

The invention discloses a preparation method of a high-gain photoelectric detector, and relates to the technical field of photoelectric detectors, and the method comprises the steps: S1, structural design: selecting a corresponding photoelectric material to manufacture an avalanche photodiode according to the application scene requirements and the working environment of the detector, the method comprises the following steps: S1, preparing a semiconductor wafer, S2, preparing the wafer, namely cleaning the semiconductor wafer by using an ultrasonic cleaning agent and a chemical solution, S3, treating the material, namely performing doping operation, and injecting ions containing phosphorus and boron elements into a semiconductor material by using an ion accelerator, S4, performing gain optimization, namely optimizing a circuit by using a Cascode technology, connecting circuits of two transistors, and performing gain optimization. S5, packaging and integrating: packaging the manufactured chip into a shell; according to the photoelectric detector, the circuit of the semiconductor is optimized by using a Cascode technology, the gain of the photoelectric detector can be improved by adjusting the bias voltage of the circuit, configuring the gain circuit and processing external signals, and meanwhile, the influence on output impedance is reduced, so that the high-frequency performance and the linearity of the whole circuit are improved.