48results about How to "Processing technology compatible" patented technology

An MOS device is formed comprising a semiconductor layer of a first conductivity type, a first source/drain region of a second conductivity type formed in the semiconductor layer, and a second source/drain region of the second conductivity type formed in the semiconductor layer and spaced apart from the first source/drain region. The MOS device further comprises a gate formed proximate an upper surface of the semiconductor layer and at least partially between the first and second source/drain regions, and a shielding structure formed proximate the upper surface of the semiconductor layer and between the gate and the second source/drain region, the shielding structure being electrically connected to the first source/drain region, the shielding structure being spaced laterally from the gate and being non-overlapping relative to the gate. In this manner, the MOS device is substantially compatible with a CMOS process technology.

The invention discloses a method for preparing a metal chalcogenide film. The method is used for growing the metal chalcogenide film on a substrate with the vapor deposition process by using a chalcogen source and a metal element source and comprises the following steps of: providing three temperature zones, wherein the temperature of the three temperature zones can be controlled independently, and the chalcogen source, the metal element source and the substrate are put in the three temperature zones respectively; controlling the three temperature zones, evaporating the chalcogen source to generate the chalcogen source steam, evaporating the metal element source to generate the metal element source steam, and heating the substrate to the predetermined deposition temperature; providing a carrier gas, and enabling the carrier gas to flow through the three temperature zones in sequence to deliver the metal element source steam to the substrate to deposit and grow so as to form the metal chalcogenide film. The method disclosed by the invention is simple, dispenses with the original complex step of introducing a nucleation site and effectively ensures the purity and the surface cleanness of a sample. The metal chalcogenide film prepared by adopting the method has high quality.

The invention relates to a silicon nitride-lithium niobate heterogeneous integrated waveguide device structure and a preparation method of the same. The silicon nitride-lithium niobate heterogeneous integrated waveguide device structure is characterized in that a silicon nitride waveguide in a silica coating layer and a lithium niobate film on the upper surface of the silicon nitride waveguide areheterogeneously integrated to form a ridge waveguide; a traveling wave electrode is arranged on the upper surface of the lithium niobate film; the silicon nitride waveguide is crossed and coupled with the lithium niobate film on the upper surface of the silicon nitride waveguide, and a high speed electric signal is applied to the traveling wave electrode to control the phase of the light wave passing through the lithium niobate film to realize conversion from amplitude modulation of the loaded electric signal to phase modulation of an optical signal; and three-dimensional vertical integrateddesign is utilized to enable integration of the chip to be more compact, so that the space is saved; at the same time insertion loss of the light waveguide can be reduced; 100G light modulation rate can be realized; high speed modulation of the light wave in the lithium niobate film can be realized and the characteristic of low loss propagation through the silicon nitride waveguide is realized; and light modulation with excellent performance is completed. The manufacturing technology of the silicon nitride-lithium niobate heterogeneous integrated waveguide device structure is compatible with the semiconductor processing technology, is high in the modulation efficiency and low in energy consumption, and has important application prospects in the optical signal processing field and other fields.

An MOS device includes a semiconductor layer of a first conductivity type, a source region of a second conductivity type formed in the semiconductor layer, and a drain region of the second conductivity type formed in the semiconductor layer and spaced apart from the source region. A gate is formed proximate an upper surface of the semiconductor layer and at least partially between the source and drain regions. The MOS device further includes a buried LDD region of the second conductivity type formed in the semiconductor layer between the gate and the drain region, the buried LDD region being spaced laterally from the drain region, and a second LDD region of the first conductivity type formed in the buried LDD region and proximate the upper surface of the semiconductor layer. The second LDD region is self-aligned with the gate and spaced laterally from the gate such that the gate is non-overlapping relative to the second LDD region.

The invention discloses a resistor-type nonvolatile storage device, comprising an upper conducting electrode, a lower conducting electrode, a solid-state electrolyte film or a binary oxide film, and metal nanocrystalline, wherein the solid-state electrolyte film or the binary oxide film is contained between the upper conducting electrode and the lower conducting electrode; and the metal nanocrystalline is positioned on the upper surface of the lower conducting electrode. The invention discloses a method for manufacturing the resistor-type nonvolatile storage device simultaneously. Aiming at the current situation that the randomness in the formation process of a conducting channel exists in two categories, i.e. fuse/antifuse and ion conduction-type in a resistor transitional type storage at present, the invention changes the electric-field strength in local parts by changing the appearance for the lower conducting electrode, thus achieving the purpose of controlling the formed position of the conducting channel. The resistor transitional type storage manufactured by the method has the characteristics of low programming voltage, little discreteness of the programming voltage, low power consumption, fast programming speed and the like.

An MOS device is formed including a semiconductor layer of a first conductivity type, a first source/drain region of a second conductivity type formed in the semiconductor layer, and a second source/drain region of the second conductivity type formed in the semiconductor layer and spaced apart from the first source/drain region. A gate is formed proximate an upper surface of the semiconductor layer and at least partially between the first and second source/drain regions. The MOS device further includes at least one contact, the at least one contact including a silicide layer formed on and in electrical connection with at least a portion of the first source/drain region, the silicide layer extending laterally away from the gate. The contact further includes at least one insulating layer formed directly on the silicide layer.

A programmable logic device (PLD) with a plurality of programmable regions is disclosed. Some of the programmable regions have switch power or ground supplies to allow them to be put into a low-power state in one or more low-power modes. At least one of the programmable regions always remains on during the low-power modes to enable the user to design custom PLD power management logic that may be placed in the always-on programmable region.

The invention discloses a double-spectrum super-surface integrated uncooled infrared detector and a manufacturing method thereof, relates to the technical field of infrared detection and imaging, andsolves the problems that an existing uncooled focal plane increases the thickness of an absorption layer for achieving high absorption rate, and the performance is reduced due to the increase of equivalent heat capacity. The focal plane comprises an array consisting of a plurality of picture elements, wherein each picture element sequentially comprises: a readout circuit, which is a silicon-basedor germanium-based CMOS integrated circuit with the functions of amplifying and reducing noise, and a readout electrode pair is arranged on the CMOS integrated circuit; an adiabatic microbridge, whichcomprises a microbridge deck, two microsupport structures and two microcantilever beams; a thermistor layer, which is a material with the absolute value of a temperature resistance coefficient higherthan 2%; a readout electrode is connected with the thermistor layer through a through hole; the thermistor layer is protected by a passivation insulating layer; the bispectral absorption film layer comprises a metal layer, a dielectric layer and a metal microarray; the manufacturing method is compatible with the traditional uncooled infrared detector processing technology, and the process is simple, so that large-scale and low-cost preparation are facilitated.

The invention discloses an infrared imaging detector carbon nanotube based on quantum dots and a preparation method for the same. The infrared imaging detector comprises a substrate, a plurality of one dimensional semiconductor carbon nanotubes or semiconductor carbon nanotube thin film strips which are positioned on the substrate, an asymmetric contact electrode for forming contact of electrons and electron hole ohmics and a plurality of Pbs quantum dots, wherein the asymmetric contact electrode comprises a plurality of first electrodes and a plurality of second electrodes. A plurality of one dimensional semiconductor carbon nanotubes or a plurality of semiconductor carbon nanotube thin film strips are arranged on the substrate by the evaporation drive self-assembling method; a first electrode, a second electrode and pattern shapes of metal connection lines are formed on the substrate; the metal layer of the electrode is evaporated; and the quantum dots are deposited on the carbon nanotube thin film in the middle of the conducting channel. The invention can obtain high detection efficiency, can solve the unstable problem of the short chain converted from the quantum dot, and can provide convenience to production.

The invention discloses a charge trapping type nonvolatile memory and a manufacturing method thereof. The memory comprises a silicon substrate, a source conduction region, a drain conduction region, a tunneling dielectric layer, an HfAlO high-K material trapping dielectric layer with a tapered band structure, a control grid dielectric layer and a grid material layer, wherein the source conduction region and the drain conduction region are heavily doped on the silicon substrate; the tunneling dielectric layer is made of SiO2 materials and covers a current carrier channel arranged between the source conduction region and the drain conduction region; the HfAlO high-K material trapping dielectric layer with the tapered band structure covers the tunneling dielectric layer; the control grid dielectric layer is made of high-k Al2O3 materials and covers the trapping dielectric layer; and the grid material layer covers the control grid dielectric layer. By utilizing the charge trapping type nonvolatile memory, the charge retaining characteristic of the charge trapping type nonvolatile memory is effectively improved, the storage window is favorably enlarged, the erasing and writing speeds are increased, and the storage performance of the charge trapping type nonvolatile memory is improved comprehensively, thereby laying the foundation for further microminiaturizing devices.

The invention relates to the technical field of ultraviolet photoelectric detectors, in particular to a zinc oxide ultraviolet photoelectric detector with adjustable gate voltage and a preparation method thereof. The zinc oxide ultraviolet photoelectric detector with the adjustable gate voltage comprises an insulating silicon substrate arranged on a bottom layer, a two-dimensional zinc oxide nanosheet layer arranged on the insulating silicon substrate and an electrode layer arranged on the two-dimensional zinc oxide nanosheet layer, wherein the electrode layer is composed of two metal electrodes which are not intersected with each other, and a zinc oxide channel is formed in the interval position of the two metal electrodes. Furthermore, a two-dimensional material layer is arranged between the two-dimensional zinc oxide nanosheet layer and each metal electrode, and the two-dimensional material has metallic property or semi-metallic property. According to the invention, the ultra-thin zinc oxide nanosheet is synthesized by using an ion layer epitaxial method, and the ultra-thin zinc oxide ultraviolet photoelectric detector capable of regulating and controlling the performance of the photoelectric detector through an external electric field is designed.

The invention discloses an SOI device capable of restraining back gate leakage current caused by radiation and a preparation method of the SOI device. The SOI device comprises a substrate, a buried oxide layer, a semiconductor body region, a grid region, a source region, a drain region, a grid side wall, a lightly doped drain (LDD) region and a leakproof region, wherein the leakproof region is sunk in the buried oxide layer and is located below the semiconductor body region. According to the photoetching SOI device, the buried oxide layer forms a sunk region, a semiconductor material is grown in an epitaxial mode and is doped regionally to form the leakproof region, the second portion in the middle is a heavily-doped region and is not easily radiated by positively charged trapped charge transoid formed by buried oxide, the back gate leakage current of the SOI device, which is caused by radiation, can be effectively restrained, and the reliability of the SOI device in a radiation environment is improved. According to the SOI device and the preparation method, only conventional processes such as photoetching, epitaxy and ion implantation doping are introduced during preparation of the conventional SOI device, so that the process is simple and compatible with existing technologies.

The invention discloses a two-dimensional display mode and three-dimensional display mode switchable device and method. The problem that an existing display device is simple in display mode is mainly solved. The two-dimensional display mode and three-dimensional display mode switchable device comprises a backlight source (1), a built-in liquid crystal layer (3), an external liquid crystal layer (2) and a lens array (4). When the built-in liquid crystal layer is in an all-pass state, the backlight source, the built-in liquid crystal layer and the lens array form a new backlight source, and light intensity is modulated through the external liquid crystal layer to achieve two-dimensional image display. The built-in liquid crystal layer, the backlight source and the lens array form a directional backlight source, and a two-dimensional anaglyph is displayed through the external liquid crystal layer to achieve multi-view three-dimensional display. When the external liquid crystal layer is in the all-pass state, unit image arrays are displayed through the built-in liquid crystal layer to achieve integrated imaging three-dimensional display. The two-dimensional display mode and three-dimensional display mode switchable device and method can achieve free switching of two-dimensional image display, multi-view three-dimensional display and integrated imaging three-dimensional display and can be used for display of televisions, computers and the like.

The invention discloses a method for preparing a compound trapping layer in a floating gate type nonvolatile storage, comprising the following steps of: co-sputtering a plurality of target materials on a tunneling medium layer by a sputtering process to deposit and grow a trapping layer medium; concealing other target materials and independently sputtering a certain target material in the sputtering process to form an embedded nanocrystalline thin-layer with surplus nanocrystalline materials in the trapping layer; after the embedded nanocrystalline thin-layer is formed, by recovering original process conditions to continuously grow trapping layer materials; and after the trapping layer materials are completely grown, forming a compound trapping layer structure stacked by nanocrystalline and the trapping layer through heat treatment. In the invention, the processing process of a device is compatible with the traditional CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process, thereby greatly simplifying the process course, reducing the manufacturing cost and laying a foundation for the device to be trending towards practical application.