Charge trapping type nonvolatile memory and manufacturing method thereof

Abstract

The invention discloses a charge trapping type nonvolatile memory and a manufacturing method thereof. The memory comprises a silicon substrate, a source conducting region and a drainage conducting region heavily doped on the silicon substrate, a tunneling dielectric layer formed by covering an SiO2 medium on a carrier channel between the source conducting region and the drainage conducting region, a first trapping layer covering on the tunneling dielectric layer, a second trapping layer covering on the first trapping layer, a control grid dielectric layer formed by high-k AI2O3 covering on a ZrO2 / Si3N4 stacked trapping layer which is formed by the first trapping layer and the second trapping layer, and a grid material layer covering on the control grid dielectric layer. The charge trapping type nonvolatile memory effectively improves the charge maintaining characteristic, is beneficial to the increasing of the memory window, improves the erasing speed, improves the memorizing characteristic comprehensively, and lays the foundation for further shrinkage of the charge trapping type nonvolatile memory.

Description

technical field [0001] The invention relates to the technical field of nanoelectronic devices and nanoprocessing, in particular to a charge-trapping nonvolatile memory and a manufacturing method thereof, which adopts a double-layer stacked trapping layer structure for energy band modulation to improve device performance. Background technique [0002] The main feature of non-volatile memory is that it can keep the stored information for a long time without power on. It has both the characteristics of read-only memory (ROM) and high access speed, and it is easy to erase and store. Rewrite, less power consumption. With the demand for large-capacity and low-power storage in multimedia applications and mobile communications, non-volatile memory, especially flash memory (Flash), occupies an increasing market share of semiconductor devices and has become a A very important type of memory. [0003] The traditional Flash memory is a silicon-based non-volatile memory using a polysil...

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Problems solved by technology

[0008] Aiming at the problem that the energy band structure of the trapping layer material in the existing charge-trapping memory leads to poor device retention, the main purpose of the present invention is to provide a charge-trapping non-volatile memory and its manufacturing method to improve the performance of charge-trapping memory devices. charge retention characteristics without sacrificing other aspects of device performance

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