Double-spectrum super-surface integrated uncooled infrared detector and manufacturing method thereof

An uncooled infrared and metasurface technology, applied in the direction of electric radiation detectors, etc., can solve the problems of performance degradation, increase of equivalent heat capacity, increase of absorption layer thickness, etc., and achieve the effect of bispectral response

Active Publication Date: 2019-05-28
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problems existing in the prior art, the present invention provides a bispectral metasurface integrated uncooled infrared detector and a manufacturing method, aiming to break through the limitations of traditional far-infrared materials

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  • Double-spectrum super-surface integrated uncooled infrared detector and manufacturing method thereof
  • Double-spectrum super-surface integrated uncooled infrared detector and manufacturing method thereof
  • Double-spectrum super-surface integrated uncooled infrared detector and manufacturing method thereof

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Embodiment 1

[0049] Bispectral metasurface integrated uncooled infrared detectors such as figure 1 shown. The focal plane pixel unit metal microarray structure is as follows Figure 4 As shown, the first dielectric layer 5-2-1 is made of germanium (Ge), the metal microarray 5-3 is made of gold (Au), each metal unit is a cross-shaped sub-wavelength super-pixel, and two adjacent metal The structure of the unit is different. The side length of the cross-shaped subwavelength structure 5-3-1 of the two structures is 1 micron, and the line widths are 1 micron and 0.3 micron, respectively. Infrared radiation with wavelengths near 5 microns and 9 microns is captured by the bispectral absorbing film layer 5, and converts light energy into Joule heat of the metal structure and phonon absorption of the dielectric structure, thereby heating the thermistor layer 3 , thereby converting the temperature change of the dual-band absorbing film layer 5 caused by the measured infrared radiation signal into...

Embodiment 2

[0061] Bispectral metasurface integrated uncooled infrared detectors such as figure 1 shown. The focal plane pixel unit metal microarray structure is as follows Figure 5 As shown, the second dielectric layer 5-2-2 is made of silicon (Si), the metal microarray 5-3 is made of gold (Au), and each metal unit is a square ring two-layer nested structure 5-3-2, the square The side length of the ring is 3 microns, the line width is 0.5 microns, the side length of the inner square is 0.8 microns, and the infrared radiation near the wavelength of 3 microns and 9 microns is captured by the bispectrum absorption film layer 5, and the light energy is converted into Joule heat of the metal structure and the phonon absorption of the dielectric structure, and then heat the thermistor layer 3, so that the temperature change of the bispectrum absorbing film layer 5 caused by the measured infrared radiation signal is converted into an electrical signal, and then obtained by the readout circuit...

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Abstract

The invention discloses a double-spectrum super-surface integrated uncooled infrared detector and a manufacturing method thereof, relates to the technical field of infrared detection and imaging, andsolves the problems that an existing uncooled focal plane increases the thickness of an absorption layer for achieving high absorption rate, and the performance is reduced due to the increase of equivalent heat capacity. The focal plane comprises an array consisting of a plurality of picture elements, wherein each picture element sequentially comprises: a readout circuit, which is a silicon-basedor germanium-based CMOS integrated circuit with the functions of amplifying and reducing noise, and a readout electrode pair is arranged on the CMOS integrated circuit; an adiabatic microbridge, whichcomprises a microbridge deck, two microsupport structures and two microcantilever beams; a thermistor layer, which is a material with the absolute value of a temperature resistance coefficient higherthan 2%; a readout electrode is connected with the thermistor layer through a through hole; the thermistor layer is protected by a passivation insulating layer; the bispectral absorption film layer comprises a metal layer, a dielectric layer and a metal microarray; the manufacturing method is compatible with the traditional uncooled infrared detector processing technology, and the process is simple, so that large-scale and low-cost preparation are facilitated.

Description

technical field [0001] The invention relates to the technical field of infrared detection and imaging, in particular to a bispectral metasurface integrated uncooled infrared detector and a manufacturing method. Background technique [0002] Most of the current mainstream infrared detection systems are aimed at single-band infrared detectors in the atmospheric window. However, due to the different areas where the infrared system is used, the change of climate temperature, the camouflage of the target, the release of infrared decoys, etc., the information obtained by the single-band infrared detection system will drop significantly, and it may even be impossible to detect the target at all. In order to solve the above problems, two-color infrared spectroscopy detection technology is needed. [0003] Dual-spectrum infrared spectrum detection technology requires synchronous collection of two infrared spectral intensities of the target. The key to the realization of this technol...

Claims

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Application Information

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IPC IPC(8): G01J5/20
Inventor 孟德佳梁中翥陶金吕金光秦余欣梁静秋张宇昊侯恩柱史晓燕
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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