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Uncooled infrared focal plane integrated with broadband artificial surface and manufacturing method thereof

An uncooled infrared and artificial surface technology, applied in the field of uncooled infrared focal plane and production, can solve the problems of increasing the complexity of the absorption layer and the limited performance of the multi-layer micro-bridge structure, so as to increase the complexity of the process and be beneficial to the Large-scale and low-cost preparation, the effect of realizing broadband response

Active Publication Date: 2019-05-28
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

[0004] In order to solve the problems existing in the prior art, the present invention provides an uncooled infrared focal plane with an integrated broadband artificial surface and a manufacturing method, aiming to break through the limitations of traditional composite absorbing materials and multi-layer micro-bridge structures, and solve the existing uncooled focal plane Increasing the complexity of the absorbing layer to achieve broadband absorption and the performance limitations caused by the multi-layer micro-bridge structure

Method used

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  • Uncooled infrared focal plane integrated with broadband artificial surface and manufacturing method thereof
  • Uncooled infrared focal plane integrated with broadband artificial surface and manufacturing method thereof
  • Uncooled infrared focal plane integrated with broadband artificial surface and manufacturing method thereof

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Embodiment 1

[0049] Uncooled infrared focal plane structures integrating broadband artificial surfaces such as figure 1 shown. The focal plane pixel unit metal microarray structure is as follows Figure 4 As shown, the first dielectric layer 5-2-1 is made of germanium (Ge), the metal microarray 5-3 is made of gold (Au), and each metal unit is composed of circular resonant units 5-3-1 of nine sizes. 3×3 superpixels. The diameters of the circular resonance units 5-3-1 are 0.8 micron, 0.9 micron, 1.0 micron, 1.1 micron, 1.2 micron, 1.3 micron, 1.4 micron, 1.5 micron, 1.6 micron respectively. Nine circular resonant units 5-3-1 with different structures realize infrared absorption at different wavelengths. Through the combination of nine bands, the infrared radiation with a wavelength of 8 microns to 14 microns is captured by the composite absorption film layer 5, and the The light energy is converted into the Joule heat of the metal structure and the phonon absorption of the dielectric stru...

Embodiment 2

[0061] Uncooled infrared focal plane structures integrating broadband artificial surfaces such as figure 1 shown. The focal plane pixel unit metal microarray structure is as follows Figure 5 As shown, the second dielectric layer 5-2-2 is made of silicon (Si), the metal microarray 5-3 is made of gold (Au), each metal unit is formed by nesting three structures, and the outermost metal ring edge The length is 3 microns, the side length of the inner metal ring is 2 microns, the line width of the inner and outer metal rings is 500 nm, and the side length of the innermost rectangular unit is 1 micron line width. The resonant wavelength of the three structural units 5-3-2 changes with the increase of the side length. Through the combination of the absorption wavelengths of the three structural units 5-3-2, the nested structure has a wavelength of 8 microns to 12 microns. The infrared radiation is captured by the absorbing film layer, and the light energy is converted into the Joul...

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Abstract

The invention discloses an uncooled infrared focal plane integrated with a broadband artificial surface and a manufacturing method thereof, relates to the technical field of infrared detection and imaging, and solves the problems that the existing uncooled focal plane increases the complexity of an absorption layer for achieving broadband absorption and the performance is limited due to a multi-layer micro-bridge structure. The focal plane comprises an array consisting of a plurality of picture elements, wherein each picture element sequentially comprises a readout circuit which is a silicon-based or germanium-based CMOS integrated circuit with the functions of amplifying and reducing noise, and a readout electrode pair is arranged on the CMOS integrated circuit; an adiabatic microbridge comprises a microbridge deck, two microsupport structures and two microcantilever beams; a thermistor layer is a material with the absolute value of a temperature resistance coefficient higher than 2%;the readout electrode is connected with the thermistor layer through a through hole; the thermistor layer is protected by a passivation insulating layer; a broadband absorption film layer comprises ametal layer, a dielectric layer and a metal microarray; the manufacturing method is compatible with the traditional uncooled infrared detector processing technology, and the process is simple, and the large-scale and low-cost preparation are facilitated.

Description

technical field [0001] The invention relates to the technical field of infrared detection and imaging, in particular to an uncooled infrared focal plane integrated with a broadband artificial surface and a manufacturing method thereof. Background technique [0002] Infrared detectors are the core components of infrared imaging systems and are widely used in military, aerospace, medical and security monitoring and other fields. According to the detection mechanism, it is mainly divided into cooled and uncooled infrared detectors. The uncooled infrared detector converts the temperature change of the absorbing layer caused by the measured infrared radiation signal into an electrical signal through the thermistor material, and then obtains the infrared information of the target. [0003] The design and integrated fabrication of the infrared absorbing layer is a key technology of the uncooled infrared detector, which determines the utilization rate of the infrared radiation of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/20
Inventor 孟德佳梁中翥陶金梁静秋秦余欣吕金光罗奕秦正侯恩柱
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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