78results about How to "Reduce process complexity" patented technology

The embodiment of the invention discloses a manufacturing method of a semiconductor structure and the semiconductor structure, and the method comprises the steps: providing a substrate which comprises an NMOS (N-channel Metal Oxide Semiconductor) device region and a PMOS (P-channel Metal Oxide Semiconductor) device region; forming a high dielectric constant dielectric layer covering the NMOS device region and the PMOS device region above the substrate; forming a gate stack structure above the high dielectric constant dielectric layer, wherein the gate stack structure is located in the NMOS device region and the PMOS device region; patterning the high-dielectric-constant dielectric layer to reserve the high-dielectric-constant dielectric layer in the NMOS device region and the high-dielectric-constant dielectric layer covered by the gate stack structure in the PMOS device region; and after isolation side walls are formed on the side walls of the gate stack structure to define boundaries of sigma trenches, forming the sigma trenches between the isolation side walls of the gate stack structure in the PMOS device region by using an etching process by taking the patterned high-dielectric-constant dielectric layer as a mask. According to the embodiment of the invention, the height difference between the pseudo gate of the PMOS device region and the pseudo gate of the NMOS device region is eliminated.

The utility model provides a pressure sensor riveting device for pressure sensor's shell and base connection fixed, the one end of shell is connected with base, including the top post, drives linear movement through drive assembly, the lateral wall of base and shell junction is provided with the clamping hole, the top post is coaxial with clamping hole, the top post applies pressure to the outside surface of shell, makes shell form the convex block that protrudes inwards, the convex block is clamped with clamping hole. Adopt mechanical riveting to replace high accuracy laser welding, need not to depend on high power laser equipment and precision alignment system, significantly reduce equipment investment and process complexity, solved the problem that traditional full welding led, more fit the working condition characteristics of supermicro sensor low intensity demand.

A method for manufacturing high-strength, hydrogen-embrittlement-resistant bolts based on microsphere shot peening, and the bolts themselves, are disclosed. The manufacturing method includes: S1, cold heading and thread rolling of alloy structural steel billets to obtain bolt forming parts; S2, surface cleaning of the bolt forming parts, followed by overall surface peening with microspheres driven by high-pressure air; after overall peening, targeted strengthening peening treatment is performed on stress concentration areas such as thread roots, undercut grooves, and flange transition corners to obtain reinforced bolt parts; S3, the reinforced bolt parts are cleaned, dried, and phosphated to obtain finished bolt parts. This design, through a "overall + targeted" composite microsphere shot peening strategy, introduces a uniform residual compressive stress field and a micron-level fine-grained plastic deformation layer on the bolt surface, forming a thicker strengthening layer in stress concentration areas, significantly improving the fatigue strength and delayed fracture resistance of high-strength bolts, while ensuring uniform surface roughness and stable assembly friction coefficient.

The invention belongs to the technical field of synthesis and preparation of aluminum nitride, and discloses a controllable and extensible preparation method of a one-dimensional aluminum nitride nanowire / nanotube, which comprises the following steps: (1) uniformly mixing a solid aluminum source and a solid nitrogen source, transferring the mixture into a rotatable crucible, transferring the crucible into a tubular furnace, sealing the tubular furnace, and carrying out heat preservation for 2-3 hours; vacuumizing and then introducing protective gas; (2) under the condition that protective gas is continuously introduced, the tubular furnace is heated to a preset target temperature for a nitridation reaction, and the nitridation reaction is carried out under the condition that a crucible rotates at a constant rotating speed; and after the reaction is finished, cooling the tubular furnace and stopping the rotation of the crucible to obtain a one-dimensional aluminum nitride nanowire or nanotube product. According to the method, the solid aluminum source and the solid nitrogen source are used as raw materials, and the crucible rotation is introduced during the nitridation reaction to carry out dynamic enabling improvement, so that the single-crystal aluminum nitride nanowire or nanotube with high purity and uniform morphology can be efficiently synthesized.

The application provides a method for determining the type of defects in a single crystal silicon wafer, comprising the following steps: measuring the particles in the As-Grown state silicon wafer by LST to obtain a first measurement result, and determining a V-rich region according to the first measurement result and a first preset density value; and performing heat treatment on the silicon wafer, and again measuring the particles in the silicon wafer by LST to obtain a second measurement result, and determining a Pv region, an I-rich region and a Pi region according to the second measurement result, a second preset density value and a third preset density value, so as to accurately and effectively distinguish the four region types of the V-rich region, the Pv region, the Pi region and the I-rich region in the single crystal silicon wafer by using the particle density, the test result is obviously distinguished, the test stability is high and the repeatability is high, and the requirement of the defect partition type on the silicon wafer is reduced.

The embodiment of the invention provides a display panel and a display device, relates to the technical field of display, and aims to solve the problem of non-uniform display of the display panel. The display panel is provided with a fan-out area; the fan-out area comprises a first area and second areas located on the two opposite sides of the first area. The first area and the second area are arranged in the first direction; the display panel comprises a plurality of fan-out lines; the plurality of fan-out lines comprise a plurality of first-type fan-out lines and a plurality of second-type fan-out lines; the plurality of first-type fan-out lines are located in the first area, and the plurality of second-type fan-out lines are located in the second area; each first-type fan-out line in the plurality of first-type fan-out lines comprises a first winding part, and the size of the area occupied by the first winding part in the second direction is smaller than the line length of the first winding part; every two adjacent first fan-out lines in the first direction are arranged on different layers. In the thickness direction of the display panel, orthographic projections of the first winding parts of every two adjacent first fan-out lines on the plane where the display panel is located are at least partially overlapped.

This application provides a semiconductor laser with a ridge-side integrated PN junction temperature control layer and its fabrication method, relating to the field of semiconductor laser technology. The semiconductor laser includes a substrate; an epitaxial structure formed on one side of the substrate along a first direction; the epitaxial structure having a first surface facing away from the substrate; a ridge waveguide layer formed on the first surface and extending along a second direction; a temperature control region formed on the first surface and located on one side of the ridge waveguide layer along a third direction; the temperature control region includes a P-type control layer and an N-type control layer, which form a PN junction. In this application embodiment, because the PN junction has high resistance and small footprint under static operation, it is possible to achieve efficient thermal tuning while reducing the process complexity of the thermal tuning scheme, improving structural reliability, and reducing the footprint, thereby meeting the industrial demands for high integration, low cost, and high reliability.

The application discloses a kind of without heating regeneration carbon dioxide normal temperature removal process and system, belong to natural gas decarburization field;A kind of without heating regeneration carbon dioxide normal temperature removal process, comprising the following steps:S1, raw material gas pretreatment;S2, CO2 absorption;S3, rich liquid flash evaporation;S4, lean liquid regeneration;S5, material circulation;The application is effectively solved by the absorption part of being set, the pain point that edge filler reaction is not sufficient, the low life of central filler;Can shake and scatter adhesion filler ball, clean filter hole impurity, avoid filter hole blockage, further improve gas-liquid mass transfer efficiency;Can buffer knock impact force, prevent that filler plate is damaged;Can effectively protect electric telescopic rod, and maintenance is convenient, need not to disassemble whole tower body, shorten maintenance cycle, guarantee production continuity;Can avoid liquid flooding, channeling phenomenon.

The application discloses a three-core UTP cable, a three-core UTP wire harness and a camera module, comprising a differential signal line pair, a ground signal line, a filler and an outer insulation layer, the outer insulation layer wrapping the differential signal line pair, the ground signal line and the filler, and the filler being located between the differential signal line pair, the ground signal line and the outer insulation layer; the differential signal line pair comprises a first differential signal line and a second differential signal line, and the first differential signal line and the second differential signal line are twisted by a double-twisted wire structure; and the differential signal line pair and the ground signal line are arranged at intervals. The application provides a more stable and reliable grounding path, can effectively conduct electrostatic charges, avoids accumulation of static electricity on the camera module, and can effectively solve the ESD failure problem of the camera module based on the UTP wire harness.

This utility model relates to a connection structure between the inner liner and heating plate of a vacuum electric heating cup, including an inner liner shell, an inner liner bottom cover, and a heating plate. The heating plate is fixedly disposed at the lower end of the inner liner bottom cover. It also includes a connecting sleeve, which is fixedly disposed at the lower end of the inner liner shell. The connecting sleeve and the inner liner shell are an integral structure. The upper end of the inner liner bottom cover is fixedly connected to the transition area between the connecting sleeve and the inner liner shell. Both the inner liner bottom cover and the heating plate are located within the connecting sleeve. This design reduces welding points, thereby lowering process complexity and vacuum sealing risks, and improving overall sealing performance and structural stability.

The utility model provides a single-sided board multiplexing structure applied to a wireless charging system. The single-sided board multiplexing structure comprises a first single-sided FPC board which comprises a first copper layer, a first base film and a cover film; the second single-sided FPC board comprises a second copper layer, a second base film and a covering film; the thickness of the bonding layer is 3-8 microns, and the bonding layer is located between the first single-face FPC board and the second single-face FPC board and used for fixing the first single-face FPC board and the second single-face FPC board; and the copper layers of the first single-sided FPC board and the second single-sided FPC board are respectively positioned on the outer sides, and interlayer conduction is realized through the bonding layer. According to the utility model, two single-sided boards are overlapped to replace a traditional double-sided board structure, so that the material cost is reduced by more than 25%; through hole electroplating (PTH), double-side etching and other complex processes are omitted, the production process is simplified, and the comprehensive cost is reduced by 18%-22%; the single-sided board is processed in a split manner, so that the alignment error of double-sided imaging is avoided, and the yield loss is reduced; interlayer conduction is achieved through filling of the conductive adhesive or the solder, a traditional electroplating process is replaced, and the process complexity and the defect risk are reduced.

The invention discloses a high-hardness anti-fog UV (ultraviolet) curing protective film and a preparation process, and belongs to the technical field of inorganic nano materials, the high-hardness anti-fog UV curing protective film comprises a base material layer and a high-hardness anti-fog UV curing layer arranged on the upper end surface, and is characterized in that the high-hardness anti-fog UV curing layer comprises the following components in parts by weight: 30-50 parts of organic resin oligomer, 10-20 parts of organic solvent, 10-20 parts of solvent, 1-5 parts of antioxidant, 1-5 parts of coupling agent and 1-5 parts of coupling agent. 10-30 parts of inorganic nanoparticles, 5-15 parts of an anti-fogging agent, 1-5 parts of a photoinitiator, 10-20 parts of a reactive diluent, 0.1-2 parts of a leveling agent, 0.1-2 parts of a defoaming agent and 0.1-1 part of a stabilizer, and the coating has the beneficial effects that the inorganic nanoparticles are uniformly introduced into a single-layer coating, so that the hardness and scratch resistance of the coating are remarkably improved; the hardness of the coating can reach 3H-5H, the scratch resistance is excellent, no obvious scratches exist on the surface, and the problem that a traditional single-layer protective film is difficult to give consideration to both high hardness and flexibility is effectively solved.

The utility model discloses a kind of stamping die of being convenient to bending forming, including base assembly and upper die plate piece, the base assembly is equipped with lower die plate piece, the lower die plate piece is equipped with forming assembly, the forming assembly includes first forming assembly, second forming assembly, third forming assembly and fourth forming assembly from front to back in turn fixed on lower die plate piece, the utility model stamping die is punched out, end bending, double-sided punching, cutting and multi-angle bending integrated in a set of tooling and is continuously completed, avoid the drawback that multiple molds need to be processed step by step, substantially shorten production line length, save floor area, simultaneously significantly improve production efficiency and product consistency, and reduce equipment cost and process complexity.

The application discloses a mechanical-chemical preparation method of potassium borohydride, and belongs to the technical field of potassium borohydride preparation. The method is characterized in that magnesium-based reducing agent, hydrogen supplementing agent and potassium borate hydrate are used to prepare potassium borohydride through a mechanical-chemical method under a protective atmosphere, and the prepared potassium borohydride is subjected to yield testing and purification under an air atmosphere. The method can realize solid-phase mechanical-chemical reaction under a vibration or low-energy planetary ball milling condition, breaks through the limitation that the reaction must be driven by high-energy ball milling equipment in the prior art, and can realize synthesis of potassium borohydride with a yield of more than 90% through low-energy planetary ball milling, so that the method has large-scale production application potential. In addition, the method has the advantages of simple process, convenient operation and low cost.

This application relates to the field of optical communication technology, specifically to a dense wavelength division multiplexing (DWDM) structure and optical chip, aiming to solve the technical problem of how to achieve a large-channel, low-crosstalk DWDM structure based on multiple coarse wavelength division multiplexers. To this end, the DWDM structure of this application includes: multiple sets of one-to-one corresponding micro-ring resonators and coarse wavelength division multiplexers, where the resonant wavelength of the micro-ring resonator includes the output wavelength of its corresponding coarse wavelength division multiplexer. Through the interleaving design of the output wavelengths of adjacent coarse wavelength division multiplexers, the channel spacing of the reduced coarse wavelength division multiplexers is achieved. Through the wavelength selection of the micro-ring resonators and the matching design between micro-ring resonators with different center resonant wavelengths and each coarse wavelength division multiplexer, the severe channel crosstalk problem caused by simply interleaving the coarse wavelength division multiplexers is reduced, thus forming a new large-channel, low-crosstalk DWDM structure, solving the problem of severe crosstalk in conventional large-channel DWDM designs.

The invention discloses a high-speed tunable laser based on a silicon nitride waveguide integrated graphene modulator and a preparation method of the high-speed tunable laser. The preparation method comprises the following steps: preparing the laser on the substrate; growing a SiO2 passivation layer and a Si3N4 waveguide layer; preparing a grating and a waveguide structure on the Si3N4 layer, wherein the grating is positioned above the laser; and transferring the graphene to the other end of the waveguide and preparing the modulator. According to the invention, monolithic integration of the graphene modulator and the laser is completed on the same substrate, the modulation bandwidth exceeds 100 GHz, other optical devices can be subsequently connected through the waveguide, and device integration is facilitated; a single laser and a graphene modulator are combined to form an array arrangement, a multi-path output high-speed tunable laser is formed, the high-speed tunable laser of an array structure can be realized, and the integration level of the device is improved; a plurality of lasers are combined into one path through waveguides and couplers and are connected with a graphene modulator to form a high-power single-path output high-speed tunable laser, and high-speed adjustable high-power laser output can be realized.

The utility model relates to a novel embedded packaging structure, including PCB board, chip and backing plate, the upper surface of backing plate is opened with mounting hole, the chip sintering is installed in mounting hole and is flush with the upper surface of backing plate and forms chip unit, the lower surface of PCB board is connected with a plurality of chip unit. This structure directly adopts the backing plate of copper material and is welded or sintering connection with PCB, need not to be plated copper, has reduced the process complexity, has reduced the chip warping risk, and the process is more environmental protection;The present application need not laser drilling, uses mature mechanical drilling + plating process instead reduces the process complexity, improves the yield rate;Move the chip to the outside of PCB, avoid the warping deformation caused by the big CTE difference between chip and PCB material, avoid the equipment damage, the mounting difficulty etc. caused by the high warping of PCB;The radiator is in direct contact with the backing plate through the connecting layer, and the heat dissipation path is shorter, the thermal resistance is lower, and the heat dissipation efficiency is improved.

The invention discloses a method for preparing a high-entropy silicide composite coating on the surface of an Nb521 alloy through a single-step slurry melting method and application, and relates to the technical field of high-temperature alloy thermal protection. The method comprises the following steps: uniformly mixing refined Nb powder, Mo powder, Cr powder, Ta powder, W powder, Zr powder, Hf powder, Y powder, Ge powder and a cosolvent through ball milling to obtain slurry I; si powder, Cr powder, V powder, Fe powder and Ti powder are subjected to ball milling and mixed to be uniform, and slurry II is obtained; and a separation coating method is adopted, the slurry I and the slurry II are sequentially brushed or dip-coated on the surface of an Nb521 alloy matrix, heat treatment is conducted for 30-90 min at the temperature of 1450-1550 DEG C, and then the high-entropy silicide composite coating is obtained on the surface of the Nb521 alloy. The refractory high-entropy metal silicide composite protective coating with metallurgical bonding and high compactness is prepared by adopting a staged slurry permeation sintering method of a metal framework and a silicon source.

The invention belongs to the technical field of batteries, and discloses a dual-ion battery and a preparation method thereof. The preparation method comprises the following steps: adding a polymer monomer in a burdening stage, uniformly dispersing the polymer monomer in a positive pole piece and a negative pole piece, finally injecting an electrolyte added with a polymer initiator, and initiating an in-situ polymerization reaction through high temperature, so that the liquid electrolyte is changed into a gel state. The invention also discloses the dual-ion battery prepared according to the method. The polymer monomers are uniformly distributed in the positive and negative pole pieces, so that the binding force of the active substance and the current collector is enhanced, and the pole piece expansion in the battery circulation process is reduced. In addition, the electrolyte is changed into a gel state, so that the oxidation potential of the electrolyte is remarkably improved, the stability of a positive and negative electrode interface is enhanced, the consumption of the electrolyte is reduced, and the safety performance of the battery is improved.

The application discloses a half-ring magnetic core with an inclined angle and a sintering process thereof. The magnetic core in a green body state comprises a half-ring magnetic core body, a connecting bridge at an opening and an interface region between the two; the connecting bridge region is filled with a mixture of Mg powder and SiO2 powder and added with B2O3 sintering aids, and the interface region is filled with a bismuthate low-melting point glass powder with a melting point of 550-650 DEG C. During preparation, sectional atmosphere sintering is adopted, the connecting bridge is densified in advance through silicon thermal reaction to inhibit sintering deformation, meanwhile, the interface glass is used to isolate and reduce thermal stress to weaken the connecting bridge, and the connecting bridge can be removed at one time in an end face grinding process; the application solves the problems of large sintering deformation of the half-ring magnetic core, difficulty in removing the connecting bridge and high high-frequency loss, significantly improves the end face precision, high-frequency performance and splicing consistency of the magnetic core, and is suitable for industrialized production in the fields of 5G communication, new energy vehicles and the like.

The invention discloses a high-precision cavity light force micro gyroscope based on magnetostriction material driving and an angular velocity measurement method, and belongs to the technical field of high-precision angular velocity measurement. The gyroscope comprises a base, a mechanical structure, a magnetostriction driving structure and optical structures, and the optical structures are located at the two ends of the mechanical structure; the magnetostriction driving structure is located below the mechanical structure. The magnetostrictive material is integrated in the driving frame of the gyroscope, a capacitance comb tooth structure required by electrostatic driving is not needed, the risk of electrostatic attraction failure is avoided, the driving stability and the environmental adaptability are improved, the driving frame is compatible with an SOI processing technology, and the angular velocity detection sensitivity and the long-term working reliability of the cavity light force micro gyroscope can be effectively guaranteed.

This invention relates to the field of building materials technology, and discloses a recycled aggregate concrete prepared from construction solid waste and its preparation method. The raw materials of the concrete include ordinary Portland cement, recycled coarse aggregate, natural fine sand, chemically targeted modification bags, quicklime powder, inducing water, and conventional mixing water. The preparation method is as follows: Dry recycled coarse aggregate containing old mortar is mixed with chemically targeted modification bags in a dry state, and then inducing water is sprayed evenly to allow the effective components to penetrate into the pores of the aggregate. Subsequently, quicklime powder is added, utilizing its exothermic effect to stimulate the modification bags to form micro-expansion crystalline precipitates within the pores, physically sealing micro-cracks in situ. Finally, cement, sand, and mixing water are added and homogenized to form the concrete. This invention effectively reduces the water absorption rate of recycled coarse aggregate and improves its strength, ensuring the overall workability and mechanical properties of the concrete, and achieving efficient and low-cost resource conversion of construction solid waste.

This invention discloses a method for optical interconnection of silicon photonic chips based on meniscus-guided additive manufacturing, belonging to the field of silicon photonic chips. The method includes: in a controlled gas environment, using a printing material system containing polymers and organic solvents, stretching a liquid bridge between the optical interfaces of two silicon photonic chips using microneedles, and guiding the movement of the meniscus to form a polymer filament connecting the two ends. Subsequently, the solvent evaporates and solidifies, ultimately forming a free-space polymer optical waveguide spanning the chips. This method does not rely on high-energy lasers or adhesive application and washing processes, and is simple, low-cost, and highly efficient. The fabricated waveguides can achieve controllable spans from hundreds of nanometers to hundreds of micrometers in diameter and tens of micrometers to millimeters in length. The end faces can be optimized into controllable transition structures, effectively improving mode matching and coupling efficiency. It features low insertion loss, high alignment tolerance, and good mechanical stability, making it suitable for high-density silicon photonic packaging and heterogeneous integration.

This invention discloses a memory device and its fabrication method, belonging to the field of semiconductor manufacturing technology. By employing a composite functional layer containing group III nitrides and co-doped metals, and directly depositing the film at room temperature using magnetron sputtering, suitable microstructures and defect distributions can be formed within the functional layer during growth. This allows the device to achieve stable resistive state transitions without additional electroforming processing, effectively reducing the device's operating voltage and significantly improving its reliability and state consistency under small-size conditions. The room-temperature magnetron sputtering fabrication method eliminates the need for high-temperature deposition or high-temperature annealing, allowing for strict control of the process temperature to meet the thermal budget requirements of CMOS back-end processes. This enables three-dimensional monolithic integration with logic circuits, simplifying the fabrication process, reducing process complexity, effectively lowering manufacturing costs, and increasing integration density.

The present invention relates to the field of coal chemical industry, particularly to a coal-based clean gasoline preparation method, which comprises: mixing a coal direct liquefaction fraction and a coal indirect liquefaction fraction, sequentially carrying out a hydrofining reaction and a hydrocracking reaction, and carrying out oil-gas separation on the hydrocracking reaction product to obtain hydrogen and a mixed oil product, fractionating the mixed oil product, and taking fractions with an initial boiling point of 40-55 DEG C and a final boiling point of 155-175 DEG C to obtain the coal-based clean gasoline, wherein the mass ratio of the direct coal liquefaction fraction to the indirect coal liquefaction fraction is (0.3-3.2): 1, the initial boiling point of the direct coal liquefaction fraction is 30-50 DEG C, the final boiling point of the direct coal liquefaction fraction is 250-270 DEG C, the initial boiling point of the indirect coal liquefaction fraction is 30-45 DEG C, and the final boiling point of the indirect coal liquefaction fraction is 220-240 DEG C. The qualified finished gasoline is prepared by coupling direct coal liquefaction and indirect coal liquefaction processing technologies, and the investment and production energy consumption are reduced.

The invention relates to the technical field of analog integrated circuits, in particular to a high-precision temperature sensor temperature-sensing front-end circuit based on a chopping technology, and aims to solve the problems of low-frequency 1 / f noise, operational amplifier input offset voltage drift, band-gap reference temperature drift, limited output driving capability and the like existing at the front end of a traditional temperature sensor. The front-end circuit comprises a chopping band-gap reference source circuit, a chopping buffer circuit and a two-phase non-overlapping clock generation circuit, wherein the chopping band-gap reference source circuit adopts a parasitic bipolar PNP transistor with an emitter junction area ratio of 8: 1 as a temperature sensing device, and a high-gain chopping folded cascode operational amplifier is embedded in the chopping band-gap reference source circuit; and stable positive temperature coefficient voltage and low-temperature drift reference voltage are generated. Noise and maladjustment are inhibited from the system architecture level, the temperature measurement precision can reach the sub-degree centigrade level, the loading capacity is high, the method is achieved based on the standard CMOS technology, a special technology and complex temperature calibration are not needed, and the method has the advantages of being low in cost, high in stability and large-scale integration.

The application provides a high-speed field effect transistor and a preparation method thereof. The high-speed field effect transistor comprises a substrate, a gate unit, a source unit and a drain unit connected to both sides of the gate unit, and the gate unit comprises an intrinsic GaAs layer, an intrinsic AlGaAs layer and an N+AlGaAs layer sequentially arranged on both ends of the intrinsic GaAs layer, a gate metal layer arranged on the upper end of the N+AlGaAs layer, a P region arranged in the middle of the intrinsic GaAs layer, the lower end of the P region being in contact with the substrate, the upper end of the P region being sequentially covered with an oxide layer and polycrystalline silicon, and both sides of the polycrystalline silicon and the oxide layer being in contact with the intrinsic AlGaAs layer. The application forms a heterojunction structure composed of AlGaAs and GaAs between the gate, the source and the drain, the structure can form a thin-layer N-type conductive channel, thereby eliminating the influence of impurity scattering; GaAs has higher electron mobility than Si, so that most carriers also move faster than in Si, in addition, GaAs also has the characteristics of reducing parasitic capacitance and signal loss, thereby effectively improving the output power and frequency.

The invention discloses a semiconductor structure and a forming method thereof. The structure comprises a printed circuit substrate; the packaging structure is in bonding connection with the printed circuit substrate and comprises a substrate, and a plurality of conductive plugs are arranged in the substrate; the thermal expansion coefficient of the material of the filling layer is greater than that of the material of the substrate; the top redistribution layer and the bottom redistribution layer are located on the substrate; and the chip structure is in bonding connection with the top rewiring layer. By introducing the filling layer with a larger thermal expansion coefficient into the substrate, the problem of huge shear stress accumulation caused by thermal expansion coefficient mismatch between the silicon-based material and the printed circuit substrate is relieved, and the reliability of the packaging structure is improved. After a traditional packaging substrate layer is cancelled, a signal transmission path is greatly shortened, the interface parasitic effect and high-frequency signal loss are further reduced, meanwhile, the simplified framework reduces dependence on a high-density organic substrate, the material cost and the process complexity are reduced, and smooth transition from a chip to system-level connection is achieved.

The invention relates to the technical field of semiconductor lasers, in particular to a laser based on annular resonant cavity and grating fiber coupling. The annular optical gain ring optical waveguide is arranged on the upper end face of the substrate; the top positive electrode is plated on the upper end surface of the optical waveguide of the annular optical gain ring; the bottom negative electrode is plated on the lower end surface of the substrate; the Bragg grating optical fiber is arranged on the upper end face of the substrate 1, and the Bragg grating optical fiber wraps part of the annular optical gain ring optical waveguide from the outside; the HR high-reflection film is plated on the end face, deviating from the light output direction, of the Bragg grating optical fiber; and the AR film is plated on the end face of the Bragg grating fiber in the light output direction. The method has the following beneficial effects: 1, the process is simplified, and the cost is reduced; 2, the coupling loss is extremely low; 3, the line width is narrow and the monochromaticity is high; and 4, the structural stability is high.

This invention discloses a multilayer integrated winding method for Litz coils on printed circuit boards, belonging to the field of power electronics technology. The invention includes: providing a PCB with at least four conductive layers; forming input / output cutout areas at the edge of the PCB; dividing multiple parallel conductors constituting one turn of the coil into multiple groups, each group starting from the same layer; each conductor sequentially traversing all conductive layers through vias in a predetermined order, extending circumferentially at a predetermined angle in each layer, so that the current paths of all conductors are uniformly distributed in a direction perpendicular to the coil plane; the input and output ends of all parallel conductors are led out from the cutout areas. This invention increases the number of PCB layers available for a single-turn coil to 4, 6, or more, significantly improving current carrying capacity; the input / output cutouts are concentrated in small-angle areas, reducing the end area occupied; each conductor only needs to undergo a minimum number of position exchanges within the cross-sectional area, reducing wiring complexity and making it suitable for the integrated design of magnetic components.