Wet oxidation process performed on a dielectric material formed from a flowable CVD process

Inactive Publication Date: 2011-06-23
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the limits of integrated circuit technology are pushed, the shrinking dimensions of interconnects in VLSI and ULSI technology have placed additional demands on processing capabilities.
One challenge regarding the manufacture of high aspect ratio trenches is avoiding the formation of voids during the deposition of dielectric material in the trenches.
However, as the aspect ratio increases, it becomes more likely that the opening o

Method used

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  • Wet oxidation process performed on a dielectric material formed from a flowable CVD process
  • Wet oxidation process performed on a dielectric material formed from a flowable CVD process
  • Wet oxidation process performed on a dielectric material formed from a flowable CVD process

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nd

[0019]FIG. 5 is a schematic cross-sectional view of a wet process tank that may be used according to one embodiment of the invention.

[0020]To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is also contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.

DETAILED DESCRIPTION

[0021]FIG. 1 is a top plan view of one embodiment of a processing tool 100 of deposition, baking and curing chambers according to disclosed embodiments. In the processing tool 100, a pair of FOUPs (front opening unified pods) 102 supply substrate substrates (e.g., 300 mm diameter wafers) that are received by robotic arms 104 and placed into load lock chambers 106. A second robotic arm 110 is disposed in a transfer chamber 112 coupled to the load lock chambers 106. The second robotic arm 110 is used to transport the substrates from t...

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Abstract

Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The invention relates to a method for processing substrates, such as semiconductor wafers, and more particularly, to a method for wet oxidizing a dielectric material disposed on a substrate.[0003]2. Description of the Related Art[0004]Reliably producing sub-half micron and smaller features is one of the key technologies for the next generation of very large scale integration (VLSI) and ultra large-scale integration (ULSI) of semiconductor devices. However, as the limits of integrated circuit technology are pushed, the shrinking dimensions of interconnects in VLSI and ULSI technology have placed additional demands on processing capabilities. Integrated circuits may include more than one million micro-electronic field effect transistors (e.g., complementary metal-oxide-semiconductor (CMOS) field effect transistors) that are formed on a substrate (e.g., semiconductor wafer) and cooperate to perform various functions within...

Claims

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Application Information

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IPC IPC(8): H01L21/316
CPCH01L21/02343H01L21/02326
Inventor WANG, LINLINMALLICK, ABHIJIT BASUINGLE, NITIN K.
Owner APPLIED MATERIALS INC
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