19 results about "Monolithic microwave integrated circuit" patented technology

High power monolithic microwave integrated circuit (MMIC) differential single pole double throw switches utilizing a series of transistors formed by a gallium nitride (GaN) foundry process. The differential switches of the present disclosure allow for larger power handling capability and wideband operation while further providing differential amplitude and phase matching.

The invention relates to calibration and monitoring in cascaded radar systems without local oscillator signal distribution. A radar monolithic microwave integrated circuit (MMIC) includes: control logic configured to set the radar MMIC to one of a plurality of operating modes; a local oscillator (LO) generation circuit configured to generate an LO signal; an LO output terminal configured to output an LO signal for LO allocation to another MMIC; and an LO distribution circuit coupled to the LO output terminal and configured to receive the LO signal from the LO generation circuit and enable or disable LO distribution of the LO signal based on the control signal. The control logic is configured to provide a control signal to the LO allocation circuit for enabling or disabling the LO allocation. The control signal is configured to enable the LO distribution circuit during a radar mode of operation and to deactivate the LO distribution circuit during at least one of a calibration mode of operation or a monitoring mode of operation.

A monolithic microwave integrated circuit (MMIC) device includes a MMIC die comprising, which includes an active circuit layer, a first substrate material, at least one conductive through-semiconductor via (TSV) extending completely through the first substrate material from a top side to a bottom side of the MMIC die. The MMIC device also includes a thermally conductive interposer which includes: a second substrate material different from the first substrate material and electrically insulating at an operating voltage of the MMIC die, at least one conductive via, pad, or trace in electrical contact with the at least one conductive TSV or the active circuit layer, and a pocket configured to receive the MMIC die.

The application discloses a high-symmetry ultra-wideband gallium nitride power amplifier power combination network, which is applied to the field of monolithic microwave integrated circuits and aims at the problem that, in the Ku wave band, the long secondary power combination transmission line seriously deteriorates the high-frequency characteristics of the existing tree-shaped power combination network and cannot meet the high-frequency and ultra-wideband requirements; the power combination network transistor of the application adopts X-shaped layout, so that the power combination network structure is axially symmetrical in the horizontal direction and the vertical direction and is centrally symmetrical relative to the secondary power combination point, the symmetry and the large-signal even-mode stability of the power combination network are improved, and the heat dissipation of the chip is facilitated, and the thermal stability is improved; the application also utilizes a two-order L-C low-pass matching network to make impedance transformation in the ultra-wideband be located in the low-Q value area of a Smith chart, and the high-frequency bandwidth and the insertion loss are further improved.

The invention discloses a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation and a building method, and relates to the technical field of power amplifier monolithic microwave integrated circuits, the three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation comprises a first circuit layer, an adapter plate circuit and a second circuit layer, the first circuit layer comprises a first ultra-wideband coupler, a second ultra-wideband coupler, a third ultra-wideband coupler, an unequal power divider and a balanced power amplifier unit; the second circuit layer comprises a control power amplifier unit and an ultra wide band phase shift attenuation unit. According to the invention, the amplitude and the phase of a radio frequency signal are adjusted at the same time through the ultra-wideband phase shift attenuation unit, so that expansion of adjustable dimensions is realized; and active load modulation is carried out on the source impedance and the load impedance of the balanced power amplifier unit through the unequal power divider, so that dual-path cooperative modulation is realized. A three-dimensional structure is adopted, so that the overall size of the amplifier is remarkably reduced.

The application provides a multi-stage monolithic microwave integrated circuit (MMIC) power amplifier, comprising: a radio frequency (RF) input end for receiving an RF signal; an amplification circuit module, comprising at least two cascade-connected transistor amplification circuit sub-modules, for cascade amplification and transmission of the RF signal; a bias filter circuit, having an output port connected to a gate voltage input end and a drain voltage input end of each transistor amplification circuit sub-module of the amplification circuit module, for providing a gate voltage and a drain voltage as a static operating point for each transistor amplification circuit sub-module of the amplification circuit module, and suppressing signal gain outside a working frequency band of the amplification circuit module through a filter network thereof; and an RF output end connected to an output end of a final-stage transistor amplification circuit sub-module of the amplification circuit module, for outputting an amplified RF signal of the amplification circuit module. The technical scheme of the application can improve the out-of-band stability of the multi-stage MMIC power amplifier.

The application provides a power amplification module and a radio frequency power amplifier module, wherein the power amplification module comprises a substrate and an input matching circuit, a driving power amplifier, an inter-stage matching circuit, a final-stage power amplifier and an output matching circuit formed on the substrate respectively; the inter-stage matching circuit is realized by hybrid matching of an on-chip circuit of a monolithic microwave integrated circuit and a first bonding gold wire inductance; the input matching circuit, the driving power amplifier and the on-chip circuit of the monolithic microwave integrated circuit are formed into a monolithic microwave integrated circuit by adopting a gallium nitride microwave monolithic integrated circuit mode; and the output matching circuit adopts an Al2O3 ceramic substrate. The power amplification module can not only reduce the cost, but also reduce the loss caused by the packaging parasitic of the driving power amplifier and the final-stage power amplifier and the inter-stage matching under the condition of realizing high-gain and high-power output of the power amplification module, and improve the integration of the power amplification module, so that the structure is compact and the overall size is smaller.

The invention provides a monolithic integrated microwave radiation system based on a light trigger switch and a preparation method thereof, and belongs to the technical field of high-power microwaves. The system comprises a driving wafer and a device wafer which are in bonding connection. The device wafer takes cubic boron nitride or hexagonal boron nitride as a substrate, and a heterojunction light trigger switch formed by a two-dimensional material functional layer and the substrate, a monolithic microwave integrated circuit and a monitoring protection module are integrated on the device wafer. And the light trigger switch is vertically integrated on the side surface of the monolithic microwave integrated circuit, generates an electric trigger signal under the excitation of the light pulse output by the driving wafer, and outputs a microwave signal after being amplified by the monolithic microwave integrated circuit. Through collaborative design of an ultra-wide forbidden band semiconductor substrate, a two-dimensional material heterojunction, a three-dimensional integration process and full-dimensional on-chip monitoring, chip integration from light-operated triggering, microwave amplification to intelligent protection is realized on a nitride-based substrate, and the power density, the response speed, the working frequency and the reliability are remarkably improved.

An automotive radar system includes a printed circuit board (PCB) formed from a plurality of layers including a first outer layer, a second outer layer, and a plurality of intermediate layers. A coaxial structure extends from the first outer layer to the second outer layer. A monolithic microwave integrated circuit (MMIC) is mounted to the first outer layer and connected to the coaxial structure. A first waveguide is formed in the second outer layer, and a second waveguide is mounted to the second outer layer over the first waveguide. The coaxial structure forms a direct energy path from the MMIC to the first waveguide.

An automotive radar system includes a printed circuit board (PCB) formed from a plurality of layers including a first outer layer, a second outer layer, and a plurality of intermediate layers. A coaxial structure extends from the first outer layer to the second outer layer. A monolithic microwave integrated circuit (MMIC) is mounted to the first outer layer and connected to the coaxial structure. A first waveguide is formed in the second outer layer, and a second waveguide is mounted to the second outer layer over the first waveguide. The coaxial structure forms a direct energy path from the MMIC to the first waveguide.

The invention discloses a broadband MMIC (Monolithic Microwave Integrated Circuit) delay line chip based on a constant-resistance delay network, which comprises an input port, an output port and six delay units connected in sequence, and is characterized in that the input port is connected with the output port through the six delay units connected in sequence; each delay unit comprises a first port, a second port, a reference state transmission line, a constant resistance delay network and first to eighth switches; the constant-resistance delay network comprises a coupling microstrip line and a shunt capacitor loaded on the coupling microstrip line. Based on gating of the constant-resistance delay network and the serial-parallel switch, delay and ground state selection are achieved, the isolation degree can be improved, and the size of a chip is effectively reduced.

This invention proposes a monolithically integrated microwave radiation system based on an optically triggered switch and its fabrication method, belonging to the field of high-power microwave technology. The system includes a driver wafer and a device wafer bonded together. The device wafer uses cubic boron nitride or hexagonal boron nitride as a substrate, on which a heterojunction optically triggered switch, a monolithic microwave integrated circuit, and a monitoring and protection module are integrated. The optically triggered switch is vertically integrated on the side of the monolithic microwave integrated circuit. Under the excitation of the optical pulse output from the driver wafer, it generates an electrical trigger signal, which is amplified by the monolithic microwave integrated circuit and outputs a microwave signal. This invention, through the synergistic design of an ultra-wide bandgap semiconductor substrate, a two-dimensional material heterojunction, three-dimensional integration technology, and full-dimensional on-chip monitoring, achieves chip integration from optical triggering, microwave amplification to intelligent protection on a nitride-based substrate, significantly improving power density, response speed, operating frequency, and reliability.

The invention provides a cross-deep-gap interconnection method, a transceiving assembly and a radio frequency system, and relates to the technical field of radio frequency microwaves. The cross-deep gap interconnection method comprises the following steps: fixing a multi-layer mixed voltage circuit board and a monolithic microwave integrated circuit on a metal base; fixing a miniature coaxial transmission line on the multilayer mixed-voltage circuit board, and connecting the miniature coaxial transmission line with the multilayer mixed-voltage circuit board; wherein the main body area of the miniature coaxial transmission line is arranged on the multi-layer mixed-voltage circuit board, and only two ends of the miniature coaxial transmission line extend out of the multi-layer mixed-voltage circuit board and are suspended in the deep gap; the deep gap is a gap between the monolithic microwave integrated circuit and the multi-layer mixed-voltage circuit board; and connecting the miniature coaxial transmission line with the monolithic microwave integrated circuit to realize signal interconnection between the multilayer mixed-voltage circuit board and the monolithic microwave integrated circuit. The parasitic inductance of the gold bonding wire can be reduced.

A radar monolithic microwave integrated circuit (MMIC) includes a control logic configured to set the radar MMIC in one of a plurality of operation modes a local oscillator (LO) generation circuit configured to generate an LO signal; an LO output terminal configured to output the LO signal for LO distribution to another MMIC; and an LO distribution circuit coupled to the LO output terminal, and configured to receive the LO signal from the LO generation circuit and enable or disable the LO distribution of the LO signal based on a control signal. The control logic is configured to provide the control signal to the LO distribution circuit for enabling or disabling the LO distribution. The control signal is configured to enable the LO distribution circuit during a radar operation mode and disable the LO distribution circuit during at least one of a calibration operation mode or a monitoring operation mode.

A monolithic microwave integrated circuit (MMIC) device is provided. The MMIC device includes a MMIC die with an active circuit layer, a first substrate material, and at least one conductive through-semiconductor via (TSV) extending completely through the first substrate material from a top side to a bottom side of the MMIC die. The MMIC device also includes a thermally dissipative interposer including a second substrate material different from the first substrate material and electrically insulating at an operating voltage of the MMIC die, and at least one conductive via, pad, or trace in electrical contact with the at least one conductive TSV or the active circuit layer.

An electromagnetic absorbing arrangement, the arrangement comprising an integrated circuit (100), such as a monolithic microwave integrated circuit (MMIC), arranged to a substrate (102) by a flip-chip connection, wherein the integrated circuit comprises a radio frequency (RF) input (108) and a radio frequency (RF) output (109). The arrangement further comprises a radio frequency absorber (200, 300, 400), arranged in connection with the integrated circuit (100), wherein the radio frequency absorber (200, 300, 400) comprises radio frequency absorbing material arranged to at least partially absorb a portion of the electric signal, e.g. parasitic radiation, that is radiated from the interconnects of the RF-input (108) and / or RF-output (109) of the integrated circuit (100).

The application belongs to the technical field of semiconductor devices, and specifically discloses a gallium nitride limiter monolithic microwave integrated circuit and a manufacturing method thereof. By arranging a plurality of cascaded limiting structures along the signal transmission direction of the main transmission line, the gallium nitride heterojunction Schottky diodes with different structures are used in the limiting structures, so that the optimal limiting effect on the input signal can be achieved. Moreover, the three-stage limiting structures cooperate with each other, so that the limiter has a larger power capacity and a lower limiting level, thereby widening the working power range of the limiter. Meanwhile, the gallium nitride heterojunction Schottky diode has a two-dimensional electron gas with a fast response speed and a short recovery time, and the gallium nitride heterojunction Schottky diodes are connected in an air bridge mode, thereby improving the response speed and the cutoff frequency of the limiter, so that the gallium nitride limiter microwave integrated circuit can be applied to a higher frequency band.

A monolithic microwave integrated circuit (MMIC) semiconductor chip includes a millimeter-wave signal generator configured to generate a signal comprising a plurality of signal sequences; a central sequencer configured to control at least one decentral sequence generator based on a timestamp information and a configuration instance transmitted in a transmission from the central sequencer to the decentral sequence generator to control at least one corresponding component in a cycle-accurate manner; a first error detection mechanism corresponding to the transmission from the central sequencer to the at least one decentral sequence generator; and a second error detection mechanism that is independent of the first error detection mechanism, the second error detection mechanism corresponding to an execution by the decentral sequence generator to control the at least one corresponding component based on the timestamp information and the configuration instance transmitted in the transmission.

A high-speed wireless data transfer device for data management devices, includes a first transfer module and a second transfer module able to exchange wirelessly between them, by microwave radio signals with a frequency greater than 50 Gigahertz, and a monolithic microwave integrated circuit. The device further includes at least one mass storage element capable of supplying or storing the transfer data with a rate greater than 1 gigabit per second when the distance separating the first transfer module and the second transfer module transfer is less than a predetermined distance; and a control device configured to control the monolithic microwave integrated circuit, the mass storage element and a communication bus connected to the mass storage element.