46 results about "Monolithic microwave integrated circuit" patented technology

A radar device includes a plurality of transmit antennas, a plurality of receive antennas, and a monolithic microwave integrated circuit (MMIC) configured to control the plurality of transmit antennas and the plurality of receive antennas. The MIMIC is configured to, transmit a radar signal through the plurality of transmit antennas in accordance with a Doppler division multiple access (DDMA), receive a reflected signal, which is at least a part of the radar signal reflected from a target, through the plurality of receive antennas, estimate a transmit antenna corresponding to the reflected signal among the plurality of transmit antennas based on a phase corresponding to the received reflected signal, and obtain radar data corresponding to the target based on the estimated transmit antenna and the reflected signal.

High power monolithic microwave integrated circuit (MMIC) differential single pole double throw switches utilizing a series of transistors formed by a gallium nitride (GaN) foundry process. The differential switches of the present disclosure allow for larger power handling capability and wideband operation while further providing differential amplitude and phase matching.

A monolithic microwave integrated circuit (MMIC) semiconductor chip includes a millimeter-wave signal generator configured to generate a signal comprising a plurality of signal sequences; a central sequencer configured to control at least one decentral sequence generator based on a timestamp information and a configuration instance transmitted in a transmission from the central sequencer to the decentral sequence generator to control at least one corresponding component in a cycle-accurate manner; a first error detection mechanism corresponding to the transmission from the central sequencer to the at least one decentral sequence generator; and a second error detection mechanism that is independent of the first error detection mechanism, the second error detection mechanism corresponding to an execution by the decentral sequence generator to control the at least one corresponding component based on the timestamp information and the configuration instance transmitted in the transmission.

A monolithic microwave integrated circuit (MMIC) system includes a growth substrate, a device layer coupled to the growth substrate, a plurality of MMIC device elements coupled to the device layer, and a plurality of metallization structures coupled to the plurality of MMIC device elements. The MMIC system also includes a carrier substrate coupled to the plurality of metallization structures and a cooling structure coupled to the carrier substrate.

The invention relates to the field of radio frequency monolithic microwave integrated circuits, and discloses a distributed amplifier based on a negative feedback active terminal, and the circuit comprises grid transmission lines which are connected in sequence; the drain electrode transmission lines are connected in sequence, the output of the previous drain electrode transmission line is connected with the input of the next drain electrode transmission line, the output end of the last drain electrode transmission line is connected with the radio frequency signal output end through a second blocking capacitor, and the input end of the first drain electrode transmission line is grounded through a resistor; an amplification network N from the input end of the Nth drain transmission line to the input end of the Nth gate transmission line, where N is an integer greater than or equal to 2; and a negative feedback active terminal from the output end of the last drain transmission line to the output end of the last gate transmission line. Through the negative feedback active terminal, the thermal noise of the resistor at the low frequency is effectively reduced, so that the low-frequency noise of the distributed amplifier is greatly reduced, and the problem that the low-frequency noise of the distributed amplifier is large is solved.

The invention belongs to the field of monolithic microwave integrated circuits, and particularly relates to an ultra-wideband high-power load chip based on a double-coupling feedback network, which comprises a first coupling feedback network, a second coupling feedback network, four resistors arranged in parallel and two matched transmission lines, the four resistors arranged in parallel and the two matched transmission lines are arranged between the first coupling feedback network and the second coupling feedback network. The four parallel resistors are arranged between the first coupling feedback network and the second coupling feedback network and cooperate with the first coupling feedback network, the second coupling feedback network and the two matched transmission lines, larger bandwidth and larger power capacity are achieved, and good heat dissipation characteristics can be guaranteed in the area as small as possible.

The invention relates to calibration and monitoring in cascaded radar systems without local oscillator signal distribution. A radar monolithic microwave integrated circuit (MMIC) includes: control logic configured to set the radar MMIC to one of a plurality of operating modes; a local oscillator (LO) generation circuit configured to generate an LO signal; an LO output terminal configured to output an LO signal for LO allocation to another MMIC; and an LO distribution circuit coupled to the LO output terminal and configured to receive the LO signal from the LO generation circuit and enable or disable LO distribution of the LO signal based on the control signal. The control logic is configured to provide a control signal to the LO allocation circuit for enabling or disabling the LO allocation. The control signal is configured to enable the LO distribution circuit during a radar mode of operation and to deactivate the LO distribution circuit during at least one of a calibration mode of operation or a monitoring mode of operation.

A monolithic microwave integrated circuit (MMIC) device includes a MMIC die comprising, which includes an active circuit layer, a first substrate material, at least one conductive through-semiconductor via (TSV) extending completely through the first substrate material from a top side to a bottom side of the MMIC die. The MMIC device also includes a thermally conductive interposer which includes: a second substrate material different from the first substrate material and electrically insulating at an operating voltage of the MMIC die, at least one conductive via, pad, or trace in electrical contact with the at least one conductive TSV or the active circuit layer, and a pocket configured to receive the MMIC die.

The invention belongs to the technical field of microwave radio frequency circuits, and discloses a standardized high-power microwave component module. Comprising a metal structural member, a first radio frequency connector, a second radio frequency connector, a first feed insulator, a second feed insulator, an upper cover plate, a lower cover plate, a first circuit wafer, a second circuit wafer, a modulation circuit board and a plurality of monolithic microwave integrated circuit (MMIC) chips, the metal structural member is used for fixing and supporting the radio frequency connector, the feed insulator, the circuit wafer, the modulation circuit board and the plurality of chips; the plurality of chips comprise a power amplifier chip, a power supply modulation chip and a negative voltage conversion chip; standardized design is adopted, rapid disassembly and repeated use of the module can be supported, and the maintenance and use cost is effectively reduced; flexible combination and rapid deployment can be carried out as a module according to the requirements of a microwave system; the advanced vertical interconnection technology is utilized, and effective vertical connection of high-power radio frequency signals can be achieved.

The application discloses a high-symmetry ultra-wideband gallium nitride power amplifier power combination network, which is applied to the field of monolithic microwave integrated circuits and aims at the problem that, in the Ku wave band, the long secondary power combination transmission line seriously deteriorates the high-frequency characteristics of the existing tree-shaped power combination network and cannot meet the high-frequency and ultra-wideband requirements; the power combination network transistor of the application adopts X-shaped layout, so that the power combination network structure is axially symmetrical in the horizontal direction and the vertical direction and is centrally symmetrical relative to the secondary power combination point, the symmetry and the large-signal even-mode stability of the power combination network are improved, and the heat dissipation of the chip is facilitated, and the thermal stability is improved; the application also utilizes a two-order L-C low-pass matching network to make impedance transformation in the ultra-wideband be located in the low-Q value area of a Smith chart, and the high-frequency bandwidth and the insertion loss are further improved.

A hybrid millimeter-wave Wilkinson divider comprises an input port (1), a first output port (2), a second output port (3), and a transmission line. The input port (1) is connected to the first and second output ports (2, 3) via the transmission line in a carrier substrate (PCB, 31). An isolation resistor of the Wilkinson divider connected between the first and second output ports (2, 3) is integrated into a monolithic microwave integrated circuit (MMIC) chip (40) mounted on the carrier substrate. On the MMIC chip, the isolation resistor is connected between RF input metal pads. A compensation circuit for parasitic capacitance caused by the RF input metal pads is provided on the MMIC chip (40), so that the on-chip resistor appears as a pure resistor to the output ports (2, 3) of the Wilkinson divider on the carrier substrate (PCB, 31).

A monolithic microwave integrated circuit (MMIC) front-end module (100) is provided, comprising: a gallium nitride structure (110) supported by a silicon substrate (120); a silicon-based transmit / receive switch (130) having a transmit mode and a receive mode; a transmit amplifier (112) configured to amplify an outgoing signal to be transmitted by the MMIC front-end module, wherein the transmit amplifier is electrically connected (132) to the transmit / receive switch, wherein the transmit amplifier comprises a gallium nitride high electron mobility transistor (HEMT) (114) formed in the gallium nitride structure; and a receive amplifier (113) configured to amplify an incoming signal received by the MMIC front-end module, wherein the receive amplifier is electrically connected (133) to the transmit / receive switch, wherein the receive amplifier comprises a gallium nitride HEMT (115) formed in the gallium nitride structure.

The present invention belongs to the field of monolithic microwave integrated circuits, specifically an ultra-wideband, high-power load chip based on a dual-coupled feedback network. The chip comprises a first coupled feedback network, a second coupled feedback network, four parallel resistors, and two matching transmission lines; the four parallel resistors and the two matching transmission lines are disposed between the first and second coupled feedback networks. By arranging the four parallel resistors between the first and second coupled feedback networks, the present invention collaborates with the first, second, coupled feedback networks, and the two matching transmission lines to achieve a wider bandwidth and higher power capacity, while maintaining excellent heat dissipation characteristics within a minimal footprint.

The present invention belongs to the field of monolithic microwave integrated circuits, and particularly relates to a method for calculating and determining the stability of a multi-stage amplifier circuit. The method establishes a behavioral matrix model including frequency, DC bias, S parameters, and port impedance based on parameters extracted from the expected DC bias of each stage of transistors in the multi-stage amplifier circuit. A single-stage amplifier unit stability calculation circuit is then established based on the behavioral matrix model to calculate and determine the stability of each stage of amplifier units. Because the established behavioral matrix model includes DC bias variables, it is not restricted by the circuit topology structure and can simulate DC bias fluctuations caused by process deviations. The method of the present invention can perform stability calculations and determinations covering DC bias fluctuations on each stage of amplifier units in the multi-stage amplifier circuit, effectively improving the complete stability of the multi-stage amplifier circuit design.

The invention discloses a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation and a building method, and relates to the technical field of power amplifier monolithic microwave integrated circuits, the three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation comprises a first circuit layer, an adapter plate circuit and a second circuit layer, the first circuit layer comprises a first ultra-wideband coupler, a second ultra-wideband coupler, a third ultra-wideband coupler, an unequal power divider and a balanced power amplifier unit; the second circuit layer comprises a control power amplifier unit and an ultra wide band phase shift attenuation unit. According to the invention, the amplitude and the phase of a radio frequency signal are adjusted at the same time through the ultra-wideband phase shift attenuation unit, so that expansion of adjustable dimensions is realized; and active load modulation is carried out on the source impedance and the load impedance of the balanced power amplifier unit through the unequal power divider, so that dual-path cooperative modulation is realized. A three-dimensional structure is adopted, so that the overall size of the amplifier is remarkably reduced.

A monolithic microwave integrated circuit (MMIC) structure having a thermally conductive substrate; a semiconductor layer disposed on a first portion of an upper surface of the substrate; an active mesa-shaped semiconductor device layer disposed on the semiconductor layer; and a passive electrical device disposed directly on a second portion of the upper surface of the substrate.

The application provides a multi-stage monolithic microwave integrated circuit (MMIC) power amplifier, comprising: a radio frequency (RF) input end for receiving an RF signal; an amplification circuit module, comprising at least two cascade-connected transistor amplification circuit sub-modules, for cascade amplification and transmission of the RF signal; a bias filter circuit, having an output port connected to a gate voltage input end and a drain voltage input end of each transistor amplification circuit sub-module of the amplification circuit module, for providing a gate voltage and a drain voltage as a static operating point for each transistor amplification circuit sub-module of the amplification circuit module, and suppressing signal gain outside a working frequency band of the amplification circuit module through a filter network thereof; and an RF output end connected to an output end of a final-stage transistor amplification circuit sub-module of the amplification circuit module, for outputting an amplified RF signal of the amplification circuit module. The technical scheme of the application can improve the out-of-band stability of the multi-stage MMIC power amplifier.

A monolithic microwave integrated circuit (MMIC) with backside interconnects for fan-out packaging is disclosed. Fan-out packaging, such as fan-out wafer-level packaging (FOWLP) or fan-out panel-level packaging (FOPLP), facilitates high-density packaging of MMICs. However, the fan-out packaging may generate undesirable electromagnetic (EM) coupling between the MMIC die and metal features in a redistribution layer (RDL) of a FOW / PLP package and / or a next-level assembly (NHA). In an exemplary aspect, a circuit package according to the present disclosure includes the MMIC die and an RDL. The MMIC includes a chip side having components that may be undesirably coupled to metal signal lines (e.g., package metal interconnects) in the RDL. The chip side of the MMIC is oriented away from the RDL to reduce such EM coupling.

A semiconductor device includes a semiconductor substrate, a semiconductor element formed on the semiconductor substrate, a first insulating film covering the semiconductor element, a second insulating film formed on the first insulating film, and a third insulating film formed on the second insulating film. The first and third insulating films allow less moisture to pass than the second insulating film. A dielectric constant of the second insulating film is lower than dielectric constants of the first and third insulating films. The first insulating film has a first portion that is in contact with a first region of an upper surface of the semiconductor substrate. The third insulating film has a second portion that is in contact with upper and side surfaces of the first portion and a second region of the upper surface. The second region is farther away from the semiconductor element than the first region.

The application provides a power amplification module and a radio frequency power amplifier module, wherein the power amplification module comprises a substrate and an input matching circuit, a driving power amplifier, an inter-stage matching circuit, a final-stage power amplifier and an output matching circuit formed on the substrate respectively; the inter-stage matching circuit is realized by hybrid matching of an on-chip circuit of a monolithic microwave integrated circuit and a first bonding gold wire inductance; the input matching circuit, the driving power amplifier and the on-chip circuit of the monolithic microwave integrated circuit are formed into a monolithic microwave integrated circuit by adopting a gallium nitride microwave monolithic integrated circuit mode; and the output matching circuit adopts an Al2O3 ceramic substrate. The power amplification module can not only reduce the cost, but also reduce the loss caused by the packaging parasitic of the driving power amplifier and the final-stage power amplifier and the inter-stage matching under the condition of realizing high-gain and high-power output of the power amplification module, and improve the integration of the power amplification module, so that the structure is compact and the overall size is smaller.

The invention provides a monolithic integrated microwave radiation system based on a light trigger switch and a preparation method thereof, and belongs to the technical field of high-power microwaves. The system comprises a driving wafer and a device wafer which are in bonding connection. The device wafer takes cubic boron nitride or hexagonal boron nitride as a substrate, and a heterojunction light trigger switch formed by a two-dimensional material functional layer and the substrate, a monolithic microwave integrated circuit and a monitoring protection module are integrated on the device wafer. And the light trigger switch is vertically integrated on the side surface of the monolithic microwave integrated circuit, generates an electric trigger signal under the excitation of the light pulse output by the driving wafer, and outputs a microwave signal after being amplified by the monolithic microwave integrated circuit. Through collaborative design of an ultra-wide forbidden band semiconductor substrate, a two-dimensional material heterojunction, a three-dimensional integration process and full-dimensional on-chip monitoring, chip integration from light-operated triggering, microwave amplification to intelligent protection is realized on a nitride-based substrate, and the power density, the response speed, the working frequency and the reliability are remarkably improved.

A method of operating a monolithic microwave integrated circuit (MMIC) in a radar transmitter includes: sending a radio frequency (RF) signal to a power amplifier of the radar transmitter, where the power amplifier is controlled by a termination control signal, where when the termination control signal is de-asserted, the power amplifier is configured to pass the RF signal through the power amplifier for transmission by an RF antenna, where when the termination control signal is asserted, the power amplifier is configured to terminate the RF signal in the power amplifier; transmitting the RF signal by de-asserting the termination control signal; and after de-asserting the termination control signal, disabling transmission of the RF signal by: reducing a power of the RF signal; and asserting the termination control signal.

A method of configuring a radar monolithic microwave integrated circuit (MMIC) and executing commands of an activated downloadable programming context is provided. The method includes receiving and storing a plurality of downloadable programming contexts that are sequentially received from an external controller, where each subsequent downloadable programming context received from the external controller is stored in a different random-access memory (RAM) partition of the radar MMIC than a RAM partition of the radar MMIC used to store a most-recent downloadable programming context received from the external controller; sequentially activating and deactivating the plurality of downloadable programming contexts according to a context execution sequence; executing the commands of an activated downloadable programming context stored in a corresponding RAM partition; and downloading a next downloadable programming context prior to a time slot in the context execution sequence that is assigned to the next downloadable programming context.

An automotive radar system includes a printed circuit board (PCB) formed from a plurality of layers including a first outer layer, a second outer layer, and a plurality of intermediate layers. A coaxial structure extends from the first outer layer to the second outer layer. A monolithic microwave integrated circuit (MMIC) is mounted to the first outer layer and connected to the coaxial structure. A first waveguide is formed in the second outer layer, and a second waveguide is mounted to the second outer layer over the first waveguide. The coaxial structure forms a direct energy path from the MMIC to the first waveguide.

A radar sensor includes: a waveguide interface configured to contact a waveguide including a first aperture that is at least partially vertically aligned with a second aperture in the waveguide; a radio frequency (RF) feed; a first wing that is coplanar with the RF feed and the waveguide interface and that electrically connects the RF feed with the waveguide interface; a first electrically conductive layer that is connected to a ground potential, that includes a third aperture that is at least partially aligned with the first and second apertures, and that includes a second wing that forms a portion of the third aperture.

An automotive radar system includes a printed circuit board (PCB) formed from a plurality of layers including a first outer layer, a second outer layer, and a plurality of intermediate layers. A coaxial structure extends from the first outer layer to the second outer layer. A monolithic microwave integrated circuit (MMIC) is mounted to the first outer layer and connected to the coaxial structure. A first waveguide is formed in the second outer layer, and a second waveguide is mounted to the second outer layer over the first waveguide. The coaxial structure forms a direct energy path from the MMIC to the first waveguide.

The application provides a chip packaging structure and a packaging method, wherein the chip packaging structure comprises at least two wafer-level chips stacked; the wafer-level chip comprises a substrate and a GaN epitaxial layer grown on the upper surface of the substrate, a plurality of signal connection pads and a plurality of grounding pads are arranged on the GaN epitaxial layer, a plurality of signal lead-out pads corresponding to the signal connection pads and a plurality of grounding lead-out pads corresponding to the grounding pads are arranged on the lower surface of the substrate; the signal lead-out pads of the wafer-level chip on the upper layer are bonded with the signal connection pads of the wafer-level chip on the adjacent lower layer, and the grounding lead-out pads of the wafer-level chip on the upper layer are bonded with the grounding pads of the wafer-level chip on the adjacent lower layer. The wafer-level chips are stacked into one by the GaN process and the wafer-level bonding technology, the wafer-level packaging of the GaN monolithic microwave integrated circuit is realized, and the integration of the chip is improved.

A radar monolithic microwave integrated circuit includes a radio frequency (RF) input configured to receive an RF signal comprising a plurality of frequency ramps; a baseband processing circuit configured to convert the RF signal into a baseband signal comprising a plurality of analog signal segments each corresponding to a different frequency ramp; an analog-to-digital converter configured to convert the plurality of analog signal segments into a plurality of respective digital signal segments, wherein each digital signal segment of the plurality of respective digital signal segments comprises a plurality of digital samples corresponding to a respective analog signal segment; and an encoder configured to receive a single digital signal segment and compress the plurality of digital samples of the single digital signal segment based on a data compression that has a defined correlation with a windowing function to generate compressed radar data corresponding to the single digital signal segment.

A monolithic microwave integrated circuit comprises a monolithic substrate, a Group III nitride-based channel layer on the monolithic substrate, a Group III nitride-based barrier layer on the monolithic substrate, a Group III nitride-based channel layer in between the monolithic substrate and the Group III nitride-based barrier layer, a radio frequency circuit that includes a plurality of depletion mode RF transistors that are formed in the Group III nitride-based channel and barrier layers, and a static random access memory (“SRAM”) circuit that includes a SRAM block having a plurality of SRAM cells arranged in rows and columns, the SRAM circuit including a plurality of depletion mode transistors and a plurality of enhancement mode transistors that are formed in the Group III nitride-based channel and barrier layers.

A waveguide module and a radio frequency interface comprising: a substrate integrated waveguide (SIW) (102, 202), a probe (103, 203), and a second waveguide (101, 201). The probe (103, 203) is arranged and / or formed at least in part to the substrate integrated waveguide (SIW) (102, 202), wherein the substrate integrated waveguide (SIW) (102, 202) comprises a coupling element and an integrated circuit (208) is arrangeable in connection with the coupling element of the substrate integrated waveguide (SIW) and the substrate integrated waveguide (SIW) (102, 202) is arranged to act as a transmission line coupling the integrated circuit (208), such as a monolithic microwave integrated circuit (MMIC), to the probe (103, 203). The substrate integrated waveguide (SIW) (102, 202) comprises at least two metallic layers and a dielectric substrate between the layers, wherein metal-plated trenches, metallized posts and / or via holes are arranged to the substrate which metal-plated trenches, metallized posts and / or via holes connect the upper and lower metal layers of the substrate integrated waveguide (102, 202), The second waveguide (101, 201) is arranged in connection with the probe (103, 203) and / or the substrate integrated waveguide (SIW) (101, 201) so that the probe (103, 203) and / or the substrate integrated waveguide (SIW) (102, 202) extends into the second waveguide (101, 201), wherein the probe (103, 203) is arranged to couple a signal coming from the integrated circuit (208) via the substrate integrated waveguide (SIW) (102, 202) to the second waveguide (101, 201) or to couple a signal coming from the second waveguide (101, 201) to the substrate integrated waveguide (SIW) (102, 202).