Microwave multi-chip packaging structure using silicon through hole and manufacture method thereof

Abstract

The invention provides a microwave multi-chip packaging structure using a silicon through hole and a manufacture method thereof. The method uses a temperature safety valve (TSV) to achieve two-sided integrated system-stage packaging structure, when a monolithic microwave integrated circuit (MMIC) chip needs integrating, a user does not need embed a substrate before wiring, and performance, reliability and rate of finished products of the packaging structure are improved. Simultaneously, processes such as injection, corrosion, release and high temperature annealing in a manufacture process can be used before integration of the MMIC, and components needing special processes can be assembled and integrated in advance on the other side of the substrate. Therefore, the substrate comprising active and passive devices, micro-electromechanical systems (MEMS), photoelectric devices and the like can be conveniently manufactured in a large scale before integration of the MMIC, and the manufacture method is simple in process, reduces cost, and is advanced and reliable at present.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a microwave multi-chip packaging structure utilizing through-silicon holes and a manufacturing method thereof. Background technique [0002] In order to meet the needs of the development of very large scale integration (VLSI), a novel 3D stacked packaging technology emerged as the times require. It integrates chips of different performance and multiple technologies into a single package with the smallest size and lightest weight. It is a kind of vertical electrical conduction between chips and wafers. , the latest package interconnection technology to realize the interconnection between chips, different from the previous IC package bonding and overlay technology using bumps, the package interconnection technology uses TSV (Through Silicon Via) instead of 2D -Cu interconnection, which can maximize the density of chips stacked in the three-dimensional direction, minimize the ext...

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a microwave multi-chip packaging structure using through-silicon vias and its manufacturing method, which is used to solve the problem of complex process, low yield, and signal crosstalk in the prior art. , high loss, and low integration density

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