97 results about "Metal semiconductor" patented technology

The invention discloses a vortex beam orbital angular momentum detector based on surface plasmon and a detection method, and belongs to the field of micro-nano photonics and photoelectric detection. The detector is based on a plane photoelectric detector of a metal-semiconductor-metal type, a vortex light field beam splitting structure is arranged on a metal electrode on one side of the detector or between two metal electrodes, the vortex light field beam splitting structure comprises an incident coupling grating, an incident light field carrying different orbital angular momentums can be split into plasmons in different directions, and the plasmons in different directions can be split into a vortex light field. The single detector resolution of the orbital angular momentum of the vortex beam is realized through the direction and propagation loss difference of plasmons. The detector is compatible with an existing semiconductor technology, the structure is simple, vortex light beams carrying high-order orbital angular momentum can be detected, and the rotation direction of a vortex light field can be detected.

The invention discloses a material with a silver coating for low-temperature brazing of brazing filler metal, and particularly relates to the field of brazing welding, which comprises the following steps: silver amalgam paste is prepared by oscillating and mixing silver powder and mercury according to the mass ratio of 1: 9-0.5: 9.5 in a manner and method for plating silver on the surface of base metal (metal, semiconductor, ceramic or glass); when brazing is carried out, the surface of the silver plating layer of the to-be-welded piece is coated with brazing filler metal, and then heating and pressurizing are carried out in a low-temperature interval of 120-350 DEG C in a vacuum, protective atmosphere or atmospheric environment to complete connection. According to the method, the amalgam reaction and isothermal solidification principles are utilized, a tough welding spot mainly comprising a silver-based solid solution is finally formed, generation of a large number of brittle intermetallic compounds is avoided, a connector has high strength, high reliability and excellent thermal fatigue resistance, and therefore the problems that gold-tin brazing filler metal is high in cost, the brittleness of the welding spot is large, and the welding temperature is high are successfully solved.

Described are light emitting diode (LED) arrays (100) comprising a plurality of mesas (101a, b) defining pixels having sidewalls, each of the mesas comprising semiconductor layers (108) having a total thickness (11), the semiconductor layers including an n-type layer (104n), an active region (106), and a p-type layer (104p). A plurality of junction spacers (118) comprise a dielectric material conformal to a portion of the sidewalls, and span a longitudinal distance of greater than or equal to 20% of the thickness (t1) of the semiconductor layers. A plurality of cathodes comprising an n-contact material (114) between each of the mesas provide optical isolation therebetween, and electrically contact an uninsulated portion (105) of the n-type layer of each of the mesas along the sidewalls, the uninsulated portion of the n-type layer comprising a doped N-type material (104n-d-1). A surface (120) of the doped N-type material of the uninsulated portion of the n-layer is effective to provide an active metal-semiconductor contact.

A metal-semiconductor contact structure, a solar cell and a photovoltaic module are provided. The metal-semiconductor contact structure includes: a doped semiconductor layer; a metal electrode in contact with the doped semiconductor layer; a first conductive region provided at a contact interface between the doped semiconductor layer and the metal electrode, and including: a first conductive structure including a plurality of first metal particles distributed in the first conductive region, at least part of the first conductive structure contacting the doped semiconductor layer; and a second conductive structure, wherein the second conductive structure is radial, at least part of the second conductive structure is located on a surface of the first metal particles, and the second conductive structure has a radial direction towards the metal electrode; wherein the metal electrode, the first metal particles, and the second conductive structure all have a same metal element.

Disclosed is a simple and scalable method for preparing a netted heterostructure of a thermoelectric material at a nanoscale. The preparation method involves shaking the nanomaterial of component B and component A in molten form in an inert environment, followed by controlled consolidation. A cellular network of component B with voids filled with component A forms a heterostructure B / A at nanoscale, where component A and component B may be a metal, a semiconductor or an insulator. Also disclosed are methods of improving the thermoelectric figure of merit (ZT) through the quantum confinement effect and methods of inverting its polarity by injecting carriers from a barrier layer in a nano-sized heterostructure. It is shown that ZTgt; ZTgt, ZTgt, ZTgt, ZTgt, ZTgt, ZTgt ', ZTgt', ZTgt ', ZTgt', ZTgt ', ZTgt' 2. The method of ZT enhancement is also applicable to semiconductor-semiconductor heterostructures as well as superlattice structures. The high ZT materials may be used for power generation, Peltier cooling and refrigeration, thermal infrared sensing and imaging, and thermal infrared display.

The invention provides a method for improving metal-semiconductor contact based on a silane coupling agent and application. The method comprises the steps that a semiconductor device is provided, the semiconductor device comprises a metal-semiconductor contact structure, the metal-semiconductor contact structure is Schottky contact, and a semiconductor material, in contact with a metal material, contained in the metal-semiconductor contact structure comprises a two-dimensional semiconductor material with hydroxyl on the surface; the semiconductor device is in contact with a silane coupling agent solution, so that the silane coupling agent reacts with hydroxyl on the surface of the two-dimensional semiconductor material, a molecular passivation layer is formed on the surface of the two-dimensional semiconductor material, and Schottky contact is converted into ohmic contact. According to the method provided by the invention, the molecular passivation layer is constructed on the surface of the two-dimensional semiconductor material by adopting the silane coupling agent, so that a surface dangling bond and an interface state in the metal-semiconductor contact structure are effectively eliminated, the metal-semiconductor contact structure is converted from Schottky contact to ohmic contact, and the stability and the reliability of a semiconductor device are improved.

In an embodiment, a method is described that includes forming a source / drain region having a first base material composition and a first concentration of a first conductivity type dopant; removing a portion of the source / drain region having the first base material composition and the first concentration of the first conductivity type dopant to expose a contact surface; and forming a contact layer on the contact surface. The contact layer comprises a second composition and has a second concentration of the first conductivity type dopant, wherein the second concentration is greater than the first concentration for the first conductivity type dopant. A metal is deposited on the contact layer, wherein an interface between the metal and the contact layer includes a metal semiconductor alloy.

The invention relates to a C-type contact structure of a two-dimensional device and a preparation method and application of the C-type contact structure. The C-type contact structure comprises a substrate (1), a gate electrode (2), a gate dielectric layer (3), a first-layer source-drain electrode (4), a two-dimensional semiconductor channel (5) and a second-layer source-drain electrode (6) which are sequentially arranged from bottom to top. And the second layer of source and drain electrode (6) and the first layer of source and drain electrode (4) are contacted and connected at the two sides of the two-dimensional semiconductor channel (5) to form C-type contact, and the two sides of the two-dimensional semiconductor channel (5) are wrapped between the second layer of source and drain electrode (6) and the first layer of source and drain electrode (4). Compared with the prior art, an upper layer of contact metal and a lower layer of contact metal (the first layer of source-drain electrode and the second layer of source-drain electrode) are designed on the contact between a channel (a two-dimensional semiconductor channel) and the source and the drain to form a C-type metal-semiconductor contact structure, so that the contact area of the two is effectively increased, and the contact resistance is reduced.

A method for preparing a MOF-based multiphase composite electromagnetic wave absorbing material is disclosed, which relates to the preparation method and application of electromagnetic wave absorbing materials. The purpose of this invention is to solve the problems of poor attenuation and narrow absorption bandwidth in ABO3-type perovskite electromagnetic wave absorbing materials prepared by existing methods. This invention is based on the metallic Fe in MIL-88A. 3+ Ions were successfully induced to form an oxide perovskite phase in MIL-88A via etching, resulting in a hierarchical hollow nanocomposite material. In this structure, the oxide perovskite, a typical spinel-type p-type semiconductor, is composited with the surrounding elemental Fe phase through an outer graphitized carbon shell. Utilizing the heterojunction effect with metal-semiconductor contacts, an excellent interfacial polarization process is generated, significantly enhancing the dielectric loss performance of the composite material. Simultaneously, by consuming excess Fe metal... 3+ Excellent electromagnetic wave absorption performance was obtained by adjusting the impedance matching of the composite material.

A semiconductor device may include a substrate insulating layer, a semiconductor pattern extending on the lower insulating pattern, a plurality of channel layers stacked on the semiconductor pattern, a gate structure surrounding the plurality of channel layers, a source / drain region on the semiconductor pattern and opposite sides of the gate structure, a backside contact structure including a contact region connected to the source / drain region, and an intermediate insulating pattern in contact with the semiconductor pattern. The backside contact structure may include a metal-semiconductor compound layer, a first insulating liner layer, a second insulating liner layer, and a conductive layer. The backside contact structure may pass through each of the substrate insulating layer, and the semiconductor pattern. The conductive layer may have a step portion between a first vertical region and a second vertical region of the backside contact structure.

The present disclosure provides for methods for designing and constructing metal / semiconductor heterostructures as catalysts for a wide range of applications such as oxygen activation. In a particular aspect, the present disclosure provides for the manipulation of atomic structures at M / TiO2 interface (e.g., Au / TiO2 interface) that significantly alters the interfacial electron distribution and prompts O2 activation. In an aspect, the present disclosure provides for a M / TiO2 composites (e.g., heterostructures) having a defect-free M / TiO2 interface and method of making the M / TiO2 composites having a defect-free M / TiO2 interface. The M can be Au, Ag, Cu, Al, Pt, Ni, or Pd, for example.

The application discloses a power device and a preparation method thereof and electronic equipment, and relates to the technical field of electronic components. The power device comprises a semiconductor substrate and a two-dimensional metal material layer on the surface of the semiconductor substrate. In the application, the two-dimensional metal material layer is in contact with the semiconductor substrate to form an electrode contact. Since the two-dimensional layered metal material forming the two-dimensional metal material layer has an atomically flat surface without dangling bonds, the two-dimensional layered metal material can provide a uniform and low-wrinkle surface for the interface between the metal and the semiconductor substrate, which is beneficial to improving the contact quality, reducing the influence of the rough surface of the semiconductor substrate, improving the transport efficiency of the carriers, and further improving the performance of the semiconductor power device.

An electrical generator system including a radionuclide material; and a sandwich structure, the sandwich structure including: a layer of an n-type semiconductor material; a layer of intrinsic n-type semiconductor material; a layer of p-type semiconductor material; and metal electrodes, one of the electrodes being in direct contact with said n-type semiconductor material and another electrode being in contact with the p-type semiconductor material, forming metal-semiconductor junctions therebetween; wherein radiation emissions received from said radionuclide material are converted into electrical energy at said metal-semiconductor junctions; and electrical contacts connected to said electrodes which facilitate the flow of said electrical energy when connected to a load.

The invention relates to the technical field of photosynthesis power generation, and discloses a device and a method for realizing photosynthesis power generation based on a liquid metal-semiconductor junction. The negative electrode comprises a metal-semiconductor junction (MSJs) consisting of liquid metal and a silicon wafer; the thylakoid suspension is positioned between the positive electrode and the negative electrode and is extracted from spinach. The liquid metal is eGaInSn room temperature liquid metal. The method comprises the following steps: extracting crushed chloroplasts and thylakoid which are rich in photosynthetic devices such as a photosystem I (PSI), a photosystem II (PS) and the like in spinach leaves by using a salt solution separation method; in combination with flexible transparent indium tin oxide (ITO), the photosynthesis power generation device with the structure of Si / LMs / BBY / ITO is manufactured. The liquid metal and the silicon wafer are combined to obtain the MSJs as the negative electrode, the electron transfer efficiency of the power generation device is enhanced, the preparation is simple, the performance is excellent, and green power generation is realized.

A semiconductor device and the method of forming are provided. The semiconductor device may include a first dielectric layer, a first source / drain region in the first dielectric layer, a first nanostructure on a sidewall of the first source / drain region, a first gate structure around the first nanostructure, a first conductive contact electrically connected to the first source / drain region, and a first metal-semiconductor alloy region between the first portion of the first conductive contact and the first source / drain region. A first portion of the first conductive contact may extend through the first source / drain region, and the first portion of the first conductive contact comprises a first sidewall and a second sidewall opposite the first sidewall in a cross-sectional view. A first portion of the first metal-semiconductor alloy region may be on the first sidewall and a second portion of the first metal-semiconductor alloy region may be on the second sidewall.

An electrical generator system including a radionuclide material; and a sandwich structure, the sandwich structure including: a layer of an n-type semiconductor material; a layer of intrinsic n-type semiconductor material; a layer of p-type semiconductor material; and metal electrodes, one of the electrodes being in direct contact with said n-type semiconductor material and another electrode being in contact with the p-type semiconductor material, forming metal-semiconductor junctions therebetween; wherein radiation emissions received from said radionuclide material are converted into electrical energy at said metal-semiconductor junctions; and electrical contacts connected to said electrodes which facilitate the flow of said electrical energy when connected to a load.

The invention provides a thermistor film infrared detector and a preparation method thereof, and belongs to the technical field of infrared detectors. The thermistor film infrared detector comprises a metal array layer configured to receive incident infrared light; the negative temperature coefficient thermistor film layer is configured to convert the absorbed infrared light into heat energy and regulate and control the resistance of the negative temperature coefficient thermistor film layer; the metal interdigital electrode layer is configured to convert the resistance variable quantity of the negative temperature coefficient thermistor film layer into a voltage signal under the driving of an external constant current source; wherein the metal interdigital electrode layer, the negative temperature coefficient thermistor film layer and the metal array layer form a metal-semiconductor-metal structure, a resonant cavity effect and a surface plasmon effect are generated, the absorption effect of the negative temperature coefficient thermistor film on infrared light is enhanced, and the response rate performance of the detector is further enhanced.

This invention discloses a deep ultraviolet LED device with a photoinduced hole compensation structure and its fabrication method. The LED device, from bottom to top, comprises: a substrate, a buffer layer, an electron transport layer, an active region, an electron blocking layer, a hole injection layer, an ohmic contact layer, an n-type light absorption layer, an insulating layer, a p-type ohmic electrode, an n-type ohmic electrode, and a mirror electrode. The electron transport layer is partially exposed, and the upper surface of the exposed portion is covered with an n-type ohmic electrode. At least one groove is etched in the hole injection layer, and an n-type light absorption layer is deposited in the groove. P-type ohmic electrodes are covered on the hole injection layer and the n-type light absorption layer. This invention facilitates vertical / quasi-vertical hole injection into the active region, increasing the hole concentration in the active region. Holes can be horizontally injected into the metal-semiconductor interface, increasing the hole concentration on the surface of the p-type semiconductor layer, reducing the interface barrier, effectively suppressing phonon generation during the photon-hole conversion process, lowering the device junction temperature, and improving the device's thermal stability.

Semiconductor devices include a first stacked set of field effect transistors (FETs), including a first top FET and a first bottom FET. A second stacked set of FETs includes a second top FET and a second bottom FET. A dielectric barrier is between the first stacked set of FETs and the second stacked set of FETs. The dielectric barrier has a narrower width between the first top FET and the second top FET than between the first bottom FET and the second bottom FET.

This invention discloses a method for preparing van der Waals metal thin films. The method includes the following steps: S1, coating a polyvinyl alcohol (PVA) film onto the surface of a supporting substrate; S2, depositing a metal film on the surface of the PVA film to obtain an intermediate; S3, placing the intermediate in water at 60-80°C to remove the PVA film, obtaining a floating metal film; transferring the metal film to the surface of a target substrate, and bonding the two together using van der Waals forces to obtain the final product. This invention utilizes the controllable dissolution properties of PVA, achieving the separation and transfer of the metal film from the supporting substrate using deionized water, avoiding the use of toxic chemical solvents and interface damage caused by high-energy bombardment. The method is simple, environmentally friendly, and can be widely applied to the preparation of van der Waals heterostructures such as metal-semiconductor and metal-insulator structures.

The present application relates to a preparation method of a flexible optoelectronic synapse device, and more particularly to a preparation method of a flexible optoelectronic synapse device with data erasing function. To obtain a flexible optoelectronic synapse device with simple structure, low cost and data erasing function. By bending the device, defects are generated inside the material, which induces the neutralization of ionized oxygen vacancies, thereby reducing the conductivity of the thin film to achieve data erasing, providing a method for quickly erasing data for metal-oxide-semiconductor-based optoelectronic synapse devices. A new solution is provided for erasing data for metal-oxide-semiconductor-based optoelectronic synapse devices with metal-semiconductor-metal structure. The flexible optoelectronic synapse device provided can highly simulate the function and behavior of biological synapses, and has a storage bit width of more than 5 bits, showing excellent performance.

The application discloses a Schottky transistor realizing a metal-semiconductor tunneling Schottky junction and a preparation method thereof, and belongs to the technical field of semiconductor electronic devices. The application utilizes the characteristic that the width of a depletion layer is inversely proportional to the tunneling strength, constructs a Schottky contact and an ohmic contact between a metal and a semiconductor, limits the width of the depletion layer by using an external physical means to obtain a semiconductor material with an extremely thin physical thickness, and applies a gate voltage to modulate the width of a Schottky barrier of a metal-semiconductor Schottky junction generated by the Schottky contact, so as to realize the tunneling effect of electrons from the semiconductor material to the metal material. The width of the barrier of the metal-semiconductor interface is dynamically modulated by the gate voltage, so that the tunneling current is accurately controlled.

Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.7 to 2.2 eV. Wafer-scale ultrathin TeSeO films, which can be deposited at room temperature, display high hole field-effect mobility of 48.5 cm2 / (Vs) and robust hole transport properties, facilitated by Te—Te (Se) portions and O—Te—O portions, respectively.

This invention discloses a vortex beam orbital angular momentum detector and detection method based on surface plasmons, belonging to the field of micro-nano photonics and photoelectric detection. The detector is based on a planar photodetector of the "metal-semiconductor-metal" type. A vortex beam-splitting structure, including an incident coupling grating, is provided on a metal electrode on one side of the detector or between two metal electrodes. This structure can split the incident light field carrying different orbital angular momentum into plasmons in different directions. By utilizing the differences in the direction and propagation loss of the plasmons, single-detector resolution of the vortex beam's orbital angular momentum is achieved. The detector of this invention is compatible with existing semiconductor processes, has a simple structure, can detect vortex beams carrying high-order orbital angular momentum, and can also detect the rotation direction of the vortex beam.

The invention discloses a heterojunction field-effect tube infrared sensor based on a surface plasmon resonance suspended gate and a preparation method thereof, the heterojunction field-effect tube infrared sensor at least comprises a source electrode, a drain electrode, a suspended gate and at least one heterojunction channel, and the source electrode and the drain electrode are electrically connected through the heterojunction channel. Wherein in the AlGaN / GaN heterostructure, the thickness of the AlGaN grid electrode position is extremely thin, and the AlGaN grid electrode position is of a groove grid structure. The surface plasmon resonance suspended gate structure can be a Pd porous nano film, a Pd nanosphere array or a Pd nanorod array and is located on the AlGaN layer. When infrared light enters, the Pd nanostructure excites the SPR effect, a local enhanced electromagnetic field is generated on a metal / semiconductor interface, and hot electrons are excited. The high-energy electrons can be injected into an under-gate AlGaN barrier layer to regulate and control the 2DEG concentration, so that the channel carrier density and the photoconductive effect are improved. And in combination with the high mobility of 2DEG, the infrared detection performance with high sensitivity and quick response is realized.

The invention relates to the field of vacuum coating, and discloses an observation window for a metal-plated semiconductor film and an observation method.The observation window for the metal-plated semiconductor film comprises an observation window frame, an observation window gland is installed on one side of the observation window frame, and observation window glass is installed in the observation window frame; a mounting frame is fixedly connected to one side of the observation window frame, a driving structure is fixedly arranged in the mounting frame, a first winding roller is rotatably connected to one side of the mounting frame, a flexible baffle is fixedly connected to one side of the outer wall of the first winding roller, and a connecting plate is fixedly connected to the bottom of the flexible baffle. Installation is carried out through the observation window frame, all devices and structures are limited on the observation window frame through the installation frame, all the devices and structures are located in the film coating chamber or the devices, the interior of the film coating chamber or the interior of the devices is observed through the observation window glass, the two winding rollers are driven by the driving structure to rotate, and the flexible baffle or the connecting rope is wound and unfolded.

A GaN HEMT device comprises a substrate layer, and a nucleating layer, a buffer layer, a channel layer and a barrier layer which are stacked on the substrate layer in sequence, the barrier layer is made of a semiconductor material with a polarization effect and a piezoelectric effect, the GaN HEMT device further comprises a dielectric layer growing in situ on the barrier layer, and the dielectric layer is an insulator; the p-GaN layer grows on the dielectric layer in situ, and the p-GaN layer is used for exhausting two-dimensional electron gas in the channel layer; the gate electrode is positioned above the p-GaN layer and forms metal semiconductor contact with the p-GaN layer; and the source electrode and the drain electrode are positioned on two sides of the gate electrode and form metal semiconductor contact with the barrier layer. The dielectric layer can reduce holes injected from gate metal and reduce gate electric leakage so as to bear larger reverse bias voltage, so that the gate breakdown voltage of the device is improved, and the transverse GaN HEMT device with high breakdown field capability is realized.

The application belongs to the technical field of semiconductor devices, and provides a high-surge multi-stage trench Schottky diode and a preparation method thereof. The Schottky diode comprises an anode, an epitaxial wafer and a cathode arranged in sequence. The epitaxial wafer comprises a semiconductor substrate and an epitaxial layer. The epitaxial layer is provided with a plurality of deep trenches on a side in contact with the anode; each deep trench comprises n sub-trenches, the width of each sub-trench gradually decreases in a direction pointing to the bottom along the opening of the deep trench, and n is a positive integer greater than 1. The inner wall and the bottom of each deep trench are provided with a hetero-barrier layer, and a field plate dielectric is further provided in contact with the hetero-barrier layer; and the opening of the deep trench is surrounded by the hetero-barrier layer. The deep trench is filled with a filling structure. The high-surge multi-stage trench Schottky diode has a better electric field shielding effect in a reverse blocking state, can further reduce the electric field of the metal-semiconductor interface, and improve the breakdown voltage of the device, the surge capacity and the long-term working reliability.

The invention relates to a windscreen (10) having an upper edge (O) and a lower edge (U), comprising an outer pane (1) having an outer side surface (I) and an inner side surface (II) and an inner pane (2) having an outer side surface (III) and an inner side surface (IV), the inner side surface (II) of the outer pane (1) and the outer side surface (III) of the inner pane (2) being connected to each other via a thermoplastic intermediate layer (3), wherein the reflective coating (20) is arranged on the inner side surface (IV) of the inner glass sheet (2), which is adapted to reflect p-polarized radiation, and which comprises, starting from the inner side surface (IV) of the inner glass sheet (2) in the defined order:-an optically high refractive layer (21) having a refractive index greater than or equal to 1.9,-at least in part, at least in part, at least in part, at least in part, at least in part, at least in part, at least in part, at least in part, at least in part, at least in part; the invention relates to a windscreen (10) comprising a lower edge (U), a reflective enhancement layer (22) based on metal, semiconductor, conductive carbide or conductive nitride, an optically low refractive index layer (23) having a refractive index less than or equal to 1.6, the windscreen (10) having at least a first sub-region (F) and a second sub-region (G), the first sub-region (F) being at a smaller distance from the lower edge (U) than the second sub-region (G), and the second sub-region (G) being at a smaller distance from the lower edge (U) than the first sub-region (F). And wherein the layer thickness of the reflection enhancing layer (22) in the first sub-region (F) is greater than the layer thickness of the reflection enhancing layer (22) in the second sub-region (G).

The invention belongs to the technical field of chemical materials, and discloses a silver modified bismuthene core-shell material, a silver sulfide modified bismuthene core-shell material and a preparation method thereof. The preparation method of the silver-modified bismuthene core-shell material comprises the following steps: preparing a non-aqueous composite electrolyte; assembling an electrochemical stripping system; performing electrochemical stripping and in-situ coating; and separating and washing the product. The preparation method of the silver sulfide modified bismuthene core-shell material comprises the following steps: dispersion treatment; preparing a sulfur source; performing in-situ transformation; and separating the product. According to the invention, unique metal-semiconductor heterojunction and semiconductor-semiconductor heterojunction structures are constructed, and the method has excellent interface bonding and stability, is a green and efficient one-pot preparation process, and is suitable for large-scale industrial production.