Metal-semiconductor electrode structure and preparation method thereof

Abstract

The invention relates to a metal-semiconductor electrode structure which comprises a semiconductor layer and a metal electrode, and a graphene layer is further arranged between the semiconductor layer and the metal electrode to reduce the contact resistance between the metal electrode and the semiconductor layer. The metal-semiconductor electrode structure provided by the invention has the advantages of improving the energy band state of metal-semiconductor contact by inserting the graphene layer between the metal and the semiconductor layer, being widely applicable to metals with different work functions and semiconductors with different doping types and doping concentrations, and reducing the contact potential barrier, thereby playing the function of reducing the contact resistance. The metal-semiconductor electrode structure provided by the invention has simple preparation method, stable performance, good repeatability and low cost and plays an important role in realizing micro nano semiconductor electronic devices with high performance and low cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and processes, in particular to a metal-semiconductor electrode structure and a preparation method thereof. Background technique [0002] An important process in the research of semiconductor devices is to use metals or alloys to make low-resistance contact electrodes. As we all know, the traditional semiconductor contact electrode production needs to process the semiconductor surface with chemical solvents, then sputter the metal film, and then perform annealing and other processes. Natural oxide layers on the sample surface and device process contamination can also significantly degrade contact characteristics. In addition, deep level traps also have a trapping effect on carriers. These factors increase the fabrication difficulty and contact characteristics of the contact electrodes. [0003] Contact electrodes on semiconductors are generally divided into two categories, namely ...

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Problems solved by technology

[0006] At present, although the ohmic contact research of n-type semiconductors with metal (alloy) as the electrode is relatively systematic and in-depth, and the contact resistivity can reach 10 -5 ~10 -8 Ωcm -2 , but the preparation process is still relatively complicated, and processes such as evaporation of multi-layer metal electrodes and annealing are unavoidable

and for p type semiconductor, on the one hand, it is impossible to find a suitable contact metal with a large work function, and p Type semiconductor itself is difficult to be heavily doped, making the preparation reliable, high-quality, low-resistance p Type contact electrodes are still a big challenge

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