80 results about "Semiconductor properties" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

The invention discloses a material classification method and device based on an ultraviolet electron spectrum, a medium and a product, and relates to the technical field of material surface science and data analysis. The method comprises the following steps: acquiring ultraviolet light electron energy spectrum data of a target material to be analyzed, and extracting a first spectrum curve from the energy spectrum data; obtaining a conductor characteristic identification result of the target material according to the first spectrum curve; under the condition of determining that the target material does not have the conductor characteristics based on the conductor characteristic identification result, extracting a second spectrum curve in a preset valence band top energy interval extending towards the negative energy direction by taking the Fermi level as a starting point from the ultraviolet light electron spectrum data, and performing multi-dimensional characteristic fusion on the second spectrum curve, generating a semiconductor characteristic identification result of the target material based on the fusion result; and determining a classification result of the target material according to the semiconductor characteristic identification result. According to the scheme, the conductive attributes of the target material can be quickly and accurately classified.

The embodiment of the invention provides an all-weather piezoelectric coupling photocatalyst as well as a preparation method and application thereof, the piezoelectric photocatalyst prepared by the embodiment of the invention can couple the characteristics of a piezoelectric material and a semiconductor, combines the principles of photocatalysis and piezoelectric catalysis, not only can realize all-weather algal inhibition with improved efficiency and speed, but also can realize all-weather algal inhibition with improved efficiency and speed. The wind energy, the water wave energy, the vibration and the solar energy in the nature can be coupled into a whole, a new principle and a new thought are provided for multi-path utilization, energy conservation and emission reduction of natural energy, and huge potential is achieved in future energy environment application.

The invention discloses a nonvolatile memory device based on CrMoGe2S6 / Ga2O3 heterostructure tensile strain and a construction method, and belongs to the technical field of nonvolatile memory devices. Comprising the following steps: vertically stacking a single layer of Ga2O3 and a single layer of CrMoGe2S6, and constructing two kinds of CrMoGe2S6 / Ga2O3 heterostructures; performing biaxial tensile strain on the CrMoGe2S6 / Ga2O3 heterostructure, calculating a magnetic ground state and an energy band of the CrMoGe2S6 / Ga2O3 heterostructure under different strains, and screening out the CrMoGe2S6 / Ga2O3 heterostructure which is represented as a ferromagnetic state; and on the basis of the screened CrMoGe2S6 / Ga2O3 heterostructures, two CrMoGe2S6 / Ga2O3 heterostructures with the same tensile strain are selected to construct the nonvolatile memory device. Ferroelectric Ga2O3 is introduced to serve as a switch, the electronic property of CrMoGe2S6 is controlled by the polarization state of Ga2O3, the Ga2O3 which is electrically polarized upward P does not change the semiconductor characteristic of CrMoGe2S6, and the Ga2O3 which is electrically polarized downward P enables the CrMoGe2S6 to present semimetallic property; therefore, the non-volatile electric control of the CrMoGe2S6 between the antiferromagnetic semiconductor and the semimetal is indirectly realized; the characteristic is especially important for a memory device, and can significantly reduce energy consumption and improve data stability.

The invention provides a performance prediction method for a hafnium oxide semiconductor material structure, and relates to the technical field of semiconductor material research and development. The method comprises the following steps: performing global search in an Hf-O binary system by using crystal structure prediction software, determining the most stable two-dimensional Hf2O4 crystal structure, and further confirming the crystal configuration through structure optimization; calculating an Hf2O4 crystal structure by using density functional theory calculation software, and evaluating the dynamic, thermodynamic and mechanical stability of Hf2O4 by using a calculation result system; the electronic property of the Hf2O4 is obtained through further deep calculation, and the structural stability and semiconductor characteristics of the Hf2O4 are verified. According to the invention, through the first principle and the evolutionary algorithm calculation, the simulation calculation is used to replace the traditional trial-and-error experiment, and the novel semiconductor material with high reliability can be efficiently explored; a theoretical basis is provided for the design of a novel high-performance semiconductor material in advanced chip manufacturing, the research and development period can be expected to be remarkably shortened, and the cost can be reduced.

The application discloses a three-dimensional ferroelectric material based on two-dimensional ice stacking and preparation and application thereof, and belongs to the technical field of ferroelectric materials and multifunctional devices. The material is a three-dimensional periodic crystal structure of monoclinic P21 space group, water molecules in the material form a completely saturated network through hydrogen bonds, and there is no suspended hydrogen; interlayers are coupled through van der Waals force to form a multi-level cooperative ferroelectric sequence of "in-plane hydrogen bond ferroelectric + interlayer van der Waals ferroelectric". The material has the characteristics of a wide-bandgap semiconductor (band gap 5-6 eV), extreme anisotropic mechanical properties (Z-axis Young's modulus 48.6 GPa, Eyx=0.973), moderate bulk modulus (12.23 GPa), good acoustic performance (sound velocity 2638 m / s) and extremely high pressure stability (0-3000 GPa structure is complete, 1190 GPa metalization transition). The material can be widely applied in the fields of X-ray optical devices, ferroelectric memories, deep ultraviolet photoelectric detectors, extreme high-pressure sensors, directional stress sensors, mechanical logic devices, surface acoustic wave filters, multifunctional integrated microsystems and multi-parameter composite sensing networks, and opens up a new direction for pure water-based functional materials.

This application discloses a two-dimensional germanium-based perovskite ferroelectric semiconductor material, its preparation method, and its applications, belonging to the field of materials science. The molecular formula of the two-dimensional germanium-based perovskite ferroelectric semiconductor material is [CH3(CH2)]. n The molecule is NH3]2CsGe2I7, where n = 2, 3, or 4. This material possesses excellent physicochemical properties, such as semiconductor characteristics, ferroelectricity, and piezoelectricity. The preparation method of this invention allows for the preparation of this material using a simple solution method at low cost. This material has potential applications in ferroelectric, optoelectronic, and other fields.

The invention relates to the technical field of semiconductor materials, in particular to a tellurium-doped selenide semiconductor material and a preparation method thereof. The chemical formula of the tellurium-doped selenide semiconductor material is FeIn2Se4-xTex, x is more than 0 and less than or equal to 1.5, and the crystal structure is a rhombohedral phase (R-3m). Compared with FeIn2Se4, the tellurium-doped selenide semiconductor material provided by the invention has the advantages that the band gap is changed, the conductivity in the temperature range of 600-750 K is obviously reduced, different semiconductor properties can be provided, and the variety of FeIn2Se4-based materials is enriched.

The application provides a nanometer memory for ultra-high density data storage and a preparation method thereof, wherein a receptor group is reasonably introduced into an amphiphilic block copolymer, micelles are self-assembled to form storage units, and the preparation of the nanometer memory is realized by arraying the micelles through the induction of a nanometer array substrate. The application has the advantages that the micelles self-assembled by the amphiphilic block copolymer are uniform in size, the obtained micelles can be regularly arrayed under the induction of the substrate, and the micelles in the substrate have good semiconductor characteristics and can be applied to the development of memory devices as nanometer storage units. Compared with traditional storage devices, the innovative method greatly reduces the size of the storage units and opens up a new way for the further development of ultra-high density data storage.

Provided are a semiconductor electricity storage material, an electricity storage body, and a laminated electricity storage body, each of which is composed of a biological material and has both semiconductor characteristics and electricity storage characteristics. The present invention relates to a fiber sheet having a fiber mainly composed of chitin or chitosan, formed in a sheet shape, and having a density of 2 g / cm3 or less. The fibers are preferably crystalline fibers / amorphous fibers, and are preferably composed of bundles or granular aggregates of chitin nanofibers or chitosan nanofibers having a width of 3-400 nm. In addition, the semiconductor is preferably an n-type bulk material semiconductor, and preferably has an N-type negative resistance.

This invention discloses a quantitative simulation method and system for the deep-level transient spectrum of irradiated semiconductors, belonging to the field of semiconductor irradiation technology. The method includes: acquiring the property parameters of the semiconductor and its irradiation defects; determining the defect types and inter-defect reaction paths in the annealing simulation based on the defect property parameters; using the semiconductor property parameters and the irradiation-induced PKA energy spectrum as input conditions, simulating the spatial distribution of initial point defects using the MC method; using the spatial distribution of initial point defects as initial conditions, and the defect property parameters and inter-defect reaction paths as input, simulating the types and concentrations of surviving defects after annealing using the OKMC method; using the property parameters and concentrations of surviving defects as input, solving the defect rate equation based on SRH theory, and substituting it into the theoretical formula for the DLTS output signal to obtain the quantitatively simulated DLTS. This invention can quantitatively simulate the DLTS of irradiated semiconductors and provide the micro-defect types and their specific proportions corresponding to different DLTS peaks.

The application provides a wafer-level room-temperature monolayer magnetic semiconductor thin film and a preparation method thereof, and relates to the technical field of two-dimensional magnetic semiconductor material preparation.The present application is based on a three-temperature-zone low-pressure chemical vapor deposition system, and the wafer-level controllable preparation of a single-cell thickness spinel structure Fe2GaO4 thin film is realized through the following steps: the partitioned treatment of Te powder, metal precursors and sapphire substrates in three temperature zones, and the preparation method of sequentially blowing and replacing by inert carrier gas and hydrogen-argon mixed gas, segmented preheating and temperature rising, oxygen regulation and control and in-situ heat preservation annealing.Meanwhile, the prepared Fe2GaO4 thin film has a thickness of only 0.53 nm, a Curie temperature of more than 300 K, intrinsic ferromagnetism at room temperature, clear optical band gap and semiconductor characteristics, and can be widely applied to various new-type spin electronic devices.

The application discloses a terpyridine zinc complex and a preparation method and application thereof, and belongs to the technical field of materials. The terpyridine zinc complex has the following molecular structure: wherein X is a counter anion; R1 and R2 are independently selected from a nitrogen heterocyclic unit, a benzene ring unit or a triphenylamine unit. The terpyridine zinc complex has a semiconductor property, can generate hydrogen peroxide under sunlight together with water and oxygen, and can be applied as a photosensitizer or a photocatalyst.

A film forming method that sprays mist on a heated substrate from a nozzle to form a crystalline oxide film by a mist CVD method, wherein the nozzle for use in the method includes at least two or more opposing gas inlets, a gas mixing unit having the gas inlets, and a gas outlet from which the mist is sprayed, and a linear velocity L (cm / sec) of the mist at any one of the two or more opposing gas inlets satisfies L≥0.8V-200, wherein V (cm3) represents a volume of the gas mixing unit. Thus, a film forming method for forming a crystalline oxide film, has excellent crystallinity and a favorable in-plane film thickness distribution even with a large area and a thin film thickness, and has excellent semiconductor properties when applied to a semiconductor device; and a film forming apparatus for performing the film forming method.

To provide a semiconductor device that can improve its characteristics, and a method for manufacturing the same.SOLUTION: According to an embodiment, a semiconductor device includes first to third electrodes and a semiconductor member. The semiconductor member includes a first semiconductor region and a second semiconductor region. The first semiconductor region includes Alx1Ga1-x1 N(0≤x1<1) and contains carbon. A first concentration of hydrogen in a sixth partial region of the first semiconductor region is lower than a second concentration of hydrogen in a fifth partial region of the first semiconductor region. The second semiconductor region includes Alx2Ga1-x2 N(x1<x2≤1). The second semiconductor region includes a first semiconductor portion.SELECTED DRAWING: Figure 1

The application relates to a thin film temperature sensor and a preparation method and a temperature field measurement method thereof, and belongs to the technical field of temperature sensors. The thin film temperature sensor has semiconductor characteristics. The thin film temperature sensor comprises SiBCN ceramics and fillers. The thin film temperature sensor provided by the application has high compactness, good surface quality, strong bonding capacity with a substrate, and is not easy to fall off. The thin film temperature sensor has obvious semiconductor characteristics in the range of 0-800 DEG C, and can meet the temperature field measurement requirements of workpiece surfaces of different materials, planes, curved surfaces and special-shaped structures under high-temperature working conditions.

The invention discloses an indium phosphide polycrystalline material crucible charging method and application thereof, and belongs to the technical field of semiconductor materials. The charging method comprises the following steps: sequentially adding indium phosphide single crystal seeds, an indium phosphide polycrystal material I, a high-purity red phosphorus doped layer, an indium phosphide polycrystal material II, a high-purity indium sulfide doped layer, an indium phosphide polycrystal material III, a liquid sealing agent adding layer, an indium phosphide polycrystal material IV and a cake-shaped indium phosphide polycrystal material into a crucible; wherein the average particle sizes of the indium phosphide polycrystal materials used in the indium phosphide polycrystal material I, the indium phosphide polycrystal material II and the indium phosphide polycrystal material III are sequentially increased. The heat conduction efficiency of the electric heating system of the single crystal furnace to the crucible is effectively improved, melting and fusion of polycrystal materials in the crucible are accelerated, the distribution uniformity of indium phosphide single crystal rod materials and the uniformity of semiconductor properties can be effectively improved, the yield of indium phosphide single crystals is further remarkably improved, and finally the quality of the indium phosphide single crystals is effectively improved.

The invention discloses a super-junction silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device and a preparation method thereof, relates to a power semiconductor device, and aims at solving the problems of a super-junction silicon carbide MOSFET in the prior art. The super-junction silicon carbide MOSFET device provided by the invention is internally provided with more than one first conductive type columnar groove which is periodically arranged; a silicon dioxide layer grows on the wall of the first conductive type columnar groove, the groove is filled with a filling layer with the characteristics of a first conductive type semiconductor, and the upper surface of the second conductive type lightly doped epitaxial layer and the two sides of the first conductive type columnar groove are provided with first conductive type body regions which are periodically arranged. The upper surface of the first conductive type body region is provided with a second conductive type heavily-doped source region and a first conductive type heavily-doped ohmic contact region which are adjacent to each other. According to the technical scheme of the invention, the cost increase caused by epitaxy is reduced, the transfer of the wafer between a processing factory and an epitaxy factory is avoided, and better device quality control is realized.

This invention provides a viscous flow-state carbazole-indole-based narrow-band blue-violet luminescent material, its preparation method, and its applications, belonging to the field of organic light-emitting materials. The viscous flow-state carbazole-indole-based blue-violet luminescent material prepared by this invention has a main blue-emitting framework obtained by connecting two phenyl groups at positions 2 and 10 of the carbazole-indole group, followed by flexible chain modification at positions 2 and 6 of the benzene group. Its core characteristic is that the molecule exhibits a viscous flow state and displays semiconductor properties. The luminescent material prepared by this invention has a regular molecular structure, good structural extensibility, good solubility, and excellent luminous efficiency, and can be used as a main luminescent material or a plasticized semiconductor molecule, thus showing great application prospects in the field of OLED displays.

The invention discloses a conjugated microporous polymer material as well as a preparation method and application thereof in photocatalysis, and belongs to the technical field of organic photoelectric materials and photocatalysis. According to the preparation method of the conjugated microporous polymer material, 1, 3, 5-trivinyl benzene and aryl halide ligands (such as 1, 4-dibromobenzene, 1, 3, 5-tribromobenzene and the like) are used as raw materials, palladium acetate is used as a catalyst, and the conjugated microporous polymer material is synthesized through a Heck coupling reaction by a hydrothermal method. The prepared conjugated microporous polymer material can generate photo-generated charges under an illumination condition, shows semiconductor-like characteristics and a two-dimensional plane structure, and is suitable for photocatalytic degradation of organic pollutants in water and reduction of carbon dioxide. The photocatalyst has a remarkable degradation effect on tetracycline hydrochloride under visible light and can be used for photocatalytic reduction of carbon dioxide to generate useful products. The material is stable in structure, large in specific surface area and reasonable in pore size distribution, and has a good application prospect.

The present invention discloses a hole transport material, a preparation method thereof, and a perovskite solar cell, wherein the hole transport material comprises a phenanthroline metal complex as shown in Formula 1: M is a divalent metal ion; X is a halogen ion. The phenanthroline metal complex of the present invention has excellent semiconductor properties; and its physical, electronic, and optical properties can be regulated by changing the divalent metal element therein; in particular, the halogen ions contained in the phenanthroline metal complex can react with the Pb that is not fully coordinated on the surface of the perovskite light-absorbing layer. 2+ Ionic bonding has an interface passivation effect, reducing the ineffective loss of carriers, thereby effectively improving the device stability and service life of the solar cell; in addition, the o-phenanthroline metal complex shown in Formula 1 is easy to obtain and low in cost.

A method of guiding a semiconductor manufacturing process includes receiving semiconductor manufacturing process data corresponding to a target semiconductor product; generating first semiconductor property data corresponding to the semiconductor manufacturing process data by using a technology computer-aided design (TCAD) model trained by machine learning based on training data including TCAD simulation data; generating second semiconductor property data corresponding to the semiconductor manufacturing process data by using a compact model generated based on measurement information of at least one semiconductor property of a first semiconductor product; generating a plurality of process strategies respectively corresponding to a plurality of countermeasure references by using a plurality of countermeasure models based on the first semiconductor property data and the second semiconductor property data; and providing a final process strategy corresponding to the target semiconductor product based on the plurality of process strategies.

The invention relates to the technical field of micro electro mechanical system element manufacturing, and discloses an ultra-fast fusing fuse device based on an MEMS process and a preparation method thereof. The preparation method specifically comprises the following steps: S101, obtaining a monocrystalline silicon substrate with good semiconductor characteristics and mechanical stability as a basic supporting structure of a device, and growing a silicon dioxide insulating layer with the thickness of 100-1000nm on the bottom surface of the monocrystalline silicon substrate; and S102, spin-coating a layer of soluble polymer material with uniform thickness on the silicon dioxide insulating layer to serve as a sacrificial layer, and performing pre-baking through a hot plate to remove the solvent and perform curing. According to the invention, the suspended aluminum fuse link structure supported by the silicon dioxide bridge beam is successfully constructed by creating the MEMS sacrificial layer and a dissolving process, and the structure enables the fuse link and the substrate to realize thermal isolation, so that heat dissipation is greatly reduced, and a device can realize microsecond-level ultra-fast response through a Joule heating effect during overcurrent.

The application discloses a conjugated polymer photoelectric material containing non-centrosymmetric benzodithiazole and a preparation method and application thereof. The conjugated polymer photoelectric material containing non-centrosymmetric benzodithiazole has a conjugated main chain and a side chain group, wherein the non-centrosymmetric benzodithiazole structure and other copolymer units D are contained in the conjugated main chain, and the side chain group is an alkyl chain R. The conjugated main chain structure of the polymer makes the polymer exhibit semiconductor characteristics and have rich photoelectric properties; meanwhile, the group R makes the polymer be able to be dissolved in an organic solvent, and the polymer is suitable for being prepared into a photoelectric device by using a printing processing method or the like. The conjugated polymer containing non-centrosymmetric benzodithiazole can be applied in photoelectric devices as a photovoltaic active layer and the like, significantly improves short-circuit current density and a fill factor of the device, and has a good application prospect.

Metal oxide particles have p-type semiconductivity. The metal oxide particles have a volume-based particle size distribution having a first local maximum value and a second local maximum value. The first local maximum value is in a range of 0.1 μm or more and less than 5 μm, and the second local maximum value is in a range of 5 μm or more and less than 50 μm. A ratio of the second local maximum value to the first local maximum value is 0.5 or more and less than 2.0. 99% by volume or more of the metal oxide particles have a particle diameter in a range of from 0.1 to 50 μm.

This cable connection structure comprises: a conductor connection part that connects respective conductors of a pair of power cables; an internal semiconductive layer that is provided so as to cover the outer periphery of the conductor connection part and has semiconductivity; an insulating layer that is provided so as to cover the outer periphery of the internal semiconductive layer, has insulating properties, and has an inner peripheral surface facing the internal semiconductive layer and an outer peripheral surface opposite to the inner peripheral surface; an external semiconductive layer that is provided so as to cover the outer periphery of the insulating layer and has semiconductivity; and an external semiconductive layer that is provided so as to cover the outer peripheral surface of the external semiconductive layer and has semiconductivity. The insulating layer comprises a base polymer including a propylene unit, a modified polymer including a propylene unit and modified by at least one selected from an unsaturated organic acid and derivatives thereof, and a thermoplastic elastomer. A ratio of a storage elastic modulus of an inner-side sample of the insulating layer to a storage elastic modulus of an outer-side sample of the insulating layer is 1.1 to 2.5, and a ratio of a volume resistivity of the inner-side sample to a volume resistivity of the outer-side sample is 1.0 to 1.5.

The application discloses a preparation method of a lanthanum ferrite / biochar composite material and application thereof in detection of gas, and belongs to the technical field of gas-sensitive sensor materials. The application first adopts a NaOH solution to treat rice husks, and prepares biochar with a porous structure after calcination, then combines the high specific surface area, porous structure and surface functional groups of the biochar with the P-type semiconductor characteristics and high catalytic activity of LaFeO3, and significantly improves the adsorption capacity and electron transmission efficiency of the composite material to ethanol. Moreover, the LaFeO3 in the composite material obtained by the preparation method of the application is uniformly loaded on the surface of the biochar in the form of regular spherical nanoparticles, and forms a porous interconnected structure, meanwhile, the surface of the biochar still retains rich functional groups such as hydroxyl groups and carboxyl groups, high-sensitivity, low-energy-consumption and high-selectivity detection of ethanol are realized, and the response speed and stability are significantly improved.

The invention discloses a preparation method and application of a zinc-gallium layered double oxide (ZGPEG) sound-sensitive agent. The preparation method of the ZGPEG sound-sensitive agent is simple and controllable, the overall reaction condition is not harsh, the difficulty of industrial application is low, and the threshold of industrial production is low. Moreover, the ZGPEG material prepared by the preparation method is a sound-sensitive material with narrow-band-gap semiconductor characteristics, and the ZGPEG material shows excellent antibacterial performance in sonodynamic therapy due to the optimized energy band structure and efficient ROS generation capability of the ZGPEG material; and meanwhile, the stable repeatability and the good penetration adaptability provide potential application value for deep bone tissue infection treatment.

The invention belongs to the technical field of ternary transition metal carbide materials, and particularly relates to a semiconductor type layered ternary transition metal carbide and a preparation method and application thereof. The chemical formula of the ternary transition metal carbide is M2SC, wherein the transition metal M is Y or Sc; the ternary transition metal carbide has an Rm type crystal structure. Comprising the following steps: by taking scandium powder or yttrium powder, sublimed sulfur and graphite powder as raw materials, sintering twice to obtain the semiconductor type layered ternary transition metal carbide. The MAX phase with semiconductor properties is obtained based on different valence states of sulfur for accurately adjusting the property of the MAX phase, the chemical formula of the semiconductor type ternary transition metal carbide is Y2SC and Sc2SC, the semiconductor type ternary transition metal carbide has an Rm type crystal structure, the existing MAX phase system is expanded by the material, and the application of the MAX phase material in the field of functional materials such as energy conversion and electronic materials is greatly expanded.

A semiconductor device having good electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. An island-shaped insulating layer containing an oxide is provided in contact with a bottom surface of a semiconductor layer containing a metal oxide exhibiting semiconductor characteristics. The insulating layer containing an oxide is provided in contact with a portion that is a channel formation region of the semiconductor layer, and is not provided in a portion that is a low-resistance region.