52 results about "Semiconductor properties" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

The invention discloses a material classification method and device based on an ultraviolet electron spectrum, a medium and a product, and relates to the technical field of material surface science and data analysis. The method comprises the following steps: acquiring ultraviolet light electron energy spectrum data of a target material to be analyzed, and extracting a first spectrum curve from the energy spectrum data; obtaining a conductor characteristic identification result of the target material according to the first spectrum curve; under the condition of determining that the target material does not have the conductor characteristics based on the conductor characteristic identification result, extracting a second spectrum curve in a preset valence band top energy interval extending towards the negative energy direction by taking the Fermi level as a starting point from the ultraviolet light electron spectrum data, and performing multi-dimensional characteristic fusion on the second spectrum curve, generating a semiconductor characteristic identification result of the target material based on the fusion result; and determining a classification result of the target material according to the semiconductor characteristic identification result. According to the scheme, the conductive attributes of the target material can be quickly and accurately classified.

The invention discloses a nonvolatile memory device based on CrMoGe2S6 / Ga2O3 heterostructure tensile strain and a construction method, and belongs to the technical field of nonvolatile memory devices. Comprising the following steps: vertically stacking a single layer of Ga2O3 and a single layer of CrMoGe2S6, and constructing two kinds of CrMoGe2S6 / Ga2O3 heterostructures; performing biaxial tensile strain on the CrMoGe2S6 / Ga2O3 heterostructure, calculating a magnetic ground state and an energy band of the CrMoGe2S6 / Ga2O3 heterostructure under different strains, and screening out the CrMoGe2S6 / Ga2O3 heterostructure which is represented as a ferromagnetic state; and on the basis of the screened CrMoGe2S6 / Ga2O3 heterostructures, two CrMoGe2S6 / Ga2O3 heterostructures with the same tensile strain are selected to construct the nonvolatile memory device. Ferroelectric Ga2O3 is introduced to serve as a switch, the electronic property of CrMoGe2S6 is controlled by the polarization state of Ga2O3, the Ga2O3 which is electrically polarized upward P does not change the semiconductor characteristic of CrMoGe2S6, and the Ga2O3 which is electrically polarized downward P enables the CrMoGe2S6 to present semimetallic property; therefore, the non-volatile electric control of the CrMoGe2S6 between the antiferromagnetic semiconductor and the semimetal is indirectly realized; the characteristic is especially important for a memory device, and can significantly reduce energy consumption and improve data stability.

The application discloses a three-dimensional ferroelectric material based on two-dimensional ice stacking and preparation and application thereof, and belongs to the technical field of ferroelectric materials and multifunctional devices. The material is a three-dimensional periodic crystal structure of monoclinic P21 space group, water molecules in the material form a completely saturated network through hydrogen bonds, and there is no suspended hydrogen; interlayers are coupled through van der Waals force to form a multi-level cooperative ferroelectric sequence of "in-plane hydrogen bond ferroelectric + interlayer van der Waals ferroelectric". The material has the characteristics of a wide-bandgap semiconductor (band gap 5-6 eV), extreme anisotropic mechanical properties (Z-axis Young's modulus 48.6 GPa, Eyx=0.973), moderate bulk modulus (12.23 GPa), good acoustic performance (sound velocity 2638 m / s) and extremely high pressure stability (0-3000 GPa structure is complete, 1190 GPa metalization transition). The material can be widely applied in the fields of X-ray optical devices, ferroelectric memories, deep ultraviolet photoelectric detectors, extreme high-pressure sensors, directional stress sensors, mechanical logic devices, surface acoustic wave filters, multifunctional integrated microsystems and multi-parameter composite sensing networks, and opens up a new direction for pure water-based functional materials.

This application discloses a two-dimensional germanium-based perovskite ferroelectric semiconductor material, its preparation method, and its applications, belonging to the field of materials science. The molecular formula of the two-dimensional germanium-based perovskite ferroelectric semiconductor material is [CH3(CH2)]. n The molecule is NH3]2CsGe2I7, where n = 2, 3, or 4. This material possesses excellent physicochemical properties, such as semiconductor characteristics, ferroelectricity, and piezoelectricity. The preparation method of this invention allows for the preparation of this material using a simple solution method at low cost. This material has potential applications in ferroelectric, optoelectronic, and other fields.

The application provides a nanometer memory for ultra-high density data storage and a preparation method thereof, wherein a receptor group is reasonably introduced into an amphiphilic block copolymer, micelles are self-assembled to form storage units, and the preparation of the nanometer memory is realized by arraying the micelles through the induction of a nanometer array substrate. The application has the advantages that the micelles self-assembled by the amphiphilic block copolymer are uniform in size, the obtained micelles can be regularly arrayed under the induction of the substrate, and the micelles in the substrate have good semiconductor characteristics and can be applied to the development of memory devices as nanometer storage units. Compared with traditional storage devices, the innovative method greatly reduces the size of the storage units and opens up a new way for the further development of ultra-high density data storage.

Provided are a semiconductor electricity storage material, an electricity storage body, and a laminated electricity storage body, each of which is composed of a biological material and has both semiconductor characteristics and electricity storage characteristics. The present invention relates to a fiber sheet having a fiber mainly composed of chitin or chitosan, formed in a sheet shape, and having a density of 2 g / cm3 or less. The fibers are preferably crystalline fibers / amorphous fibers, and are preferably composed of bundles or granular aggregates of chitin nanofibers or chitosan nanofibers having a width of 3-400 nm. In addition, the semiconductor is preferably an n-type bulk material semiconductor, and preferably has an N-type negative resistance.

The application provides a wafer-level room-temperature monolayer magnetic semiconductor thin film and a preparation method thereof, and relates to the technical field of two-dimensional magnetic semiconductor material preparation.The present application is based on a three-temperature-zone low-pressure chemical vapor deposition system, and the wafer-level controllable preparation of a single-cell thickness spinel structure Fe2GaO4 thin film is realized through the following steps: the partitioned treatment of Te powder, metal precursors and sapphire substrates in three temperature zones, and the preparation method of sequentially blowing and replacing by inert carrier gas and hydrogen-argon mixed gas, segmented preheating and temperature rising, oxygen regulation and control and in-situ heat preservation annealing.Meanwhile, the prepared Fe2GaO4 thin film has a thickness of only 0.53 nm, a Curie temperature of more than 300 K, intrinsic ferromagnetism at room temperature, clear optical band gap and semiconductor characteristics, and can be widely applied to various new-type spin electronic devices.

The invention discloses an indium phosphide polycrystalline material crucible charging method and application thereof, and belongs to the technical field of semiconductor materials. The charging method comprises the following steps: sequentially adding indium phosphide single crystal seeds, an indium phosphide polycrystal material I, a high-purity red phosphorus doped layer, an indium phosphide polycrystal material II, a high-purity indium sulfide doped layer, an indium phosphide polycrystal material III, a liquid sealing agent adding layer, an indium phosphide polycrystal material IV and a cake-shaped indium phosphide polycrystal material into a crucible; wherein the average particle sizes of the indium phosphide polycrystal materials used in the indium phosphide polycrystal material I, the indium phosphide polycrystal material II and the indium phosphide polycrystal material III are sequentially increased. The heat conduction efficiency of the electric heating system of the single crystal furnace to the crucible is effectively improved, melting and fusion of polycrystal materials in the crucible are accelerated, the distribution uniformity of indium phosphide single crystal rod materials and the uniformity of semiconductor properties can be effectively improved, the yield of indium phosphide single crystals is further remarkably improved, and finally the quality of the indium phosphide single crystals is effectively improved.

The invention discloses a super-junction silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device and a preparation method thereof, relates to a power semiconductor device, and aims at solving the problems of a super-junction silicon carbide MOSFET in the prior art. The super-junction silicon carbide MOSFET device provided by the invention is internally provided with more than one first conductive type columnar groove which is periodically arranged; a silicon dioxide layer grows on the wall of the first conductive type columnar groove, the groove is filled with a filling layer with the characteristics of a first conductive type semiconductor, and the upper surface of the second conductive type lightly doped epitaxial layer and the two sides of the first conductive type columnar groove are provided with first conductive type body regions which are periodically arranged. The upper surface of the first conductive type body region is provided with a second conductive type heavily-doped source region and a first conductive type heavily-doped ohmic contact region which are adjacent to each other. According to the technical scheme of the invention, the cost increase caused by epitaxy is reduced, the transfer of the wafer between a processing factory and an epitaxy factory is avoided, and better device quality control is realized.

This invention provides a viscous flow-state carbazole-indole-based narrow-band blue-violet luminescent material, its preparation method, and its applications, belonging to the field of organic light-emitting materials. The viscous flow-state carbazole-indole-based blue-violet luminescent material prepared by this invention has a main blue-emitting framework obtained by connecting two phenyl groups at positions 2 and 10 of the carbazole-indole group, followed by flexible chain modification at positions 2 and 6 of the benzene group. Its core characteristic is that the molecule exhibits a viscous flow state and displays semiconductor properties. The luminescent material prepared by this invention has a regular molecular structure, good structural extensibility, good solubility, and excellent luminous efficiency, and can be used as a main luminescent material or a plasticized semiconductor molecule, thus showing great application prospects in the field of OLED displays.

The invention discloses a conjugated microporous polymer material as well as a preparation method and application thereof in photocatalysis, and belongs to the technical field of organic photoelectric materials and photocatalysis. According to the preparation method of the conjugated microporous polymer material, 1, 3, 5-trivinyl benzene and aryl halide ligands (such as 1, 4-dibromobenzene, 1, 3, 5-tribromobenzene and the like) are used as raw materials, palladium acetate is used as a catalyst, and the conjugated microporous polymer material is synthesized through a Heck coupling reaction by a hydrothermal method. The prepared conjugated microporous polymer material can generate photo-generated charges under an illumination condition, shows semiconductor-like characteristics and a two-dimensional plane structure, and is suitable for photocatalytic degradation of organic pollutants in water and reduction of carbon dioxide. The photocatalyst has a remarkable degradation effect on tetracycline hydrochloride under visible light and can be used for photocatalytic reduction of carbon dioxide to generate useful products. The material is stable in structure, large in specific surface area and reasonable in pore size distribution, and has a good application prospect.

A method of guiding a semiconductor manufacturing process includes receiving semiconductor manufacturing process data corresponding to a target semiconductor product; generating first semiconductor property data corresponding to the semiconductor manufacturing process data by using a technology computer-aided design (TCAD) model trained by machine learning based on training data including TCAD simulation data; generating second semiconductor property data corresponding to the semiconductor manufacturing process data by using a compact model generated based on measurement information of at least one semiconductor property of a first semiconductor product; generating a plurality of process strategies respectively corresponding to a plurality of countermeasure references by using a plurality of countermeasure models based on the first semiconductor property data and the second semiconductor property data; and providing a final process strategy corresponding to the target semiconductor product based on the plurality of process strategies.

The invention relates to the technical field of micro electro mechanical system element manufacturing, and discloses an ultra-fast fusing fuse device based on an MEMS process and a preparation method thereof. The preparation method specifically comprises the following steps: S101, obtaining a monocrystalline silicon substrate with good semiconductor characteristics and mechanical stability as a basic supporting structure of a device, and growing a silicon dioxide insulating layer with the thickness of 100-1000nm on the bottom surface of the monocrystalline silicon substrate; and S102, spin-coating a layer of soluble polymer material with uniform thickness on the silicon dioxide insulating layer to serve as a sacrificial layer, and performing pre-baking through a hot plate to remove the solvent and perform curing. According to the invention, the suspended aluminum fuse link structure supported by the silicon dioxide bridge beam is successfully constructed by creating the MEMS sacrificial layer and a dissolving process, and the structure enables the fuse link and the substrate to realize thermal isolation, so that heat dissipation is greatly reduced, and a device can realize microsecond-level ultra-fast response through a Joule heating effect during overcurrent.

This cable connection structure comprises: a conductor connection part that connects respective conductors of a pair of power cables; an internal semiconductive layer that is provided so as to cover the outer periphery of the conductor connection part and has semiconductivity; an insulating layer that is provided so as to cover the outer periphery of the internal semiconductive layer, has insulating properties, and has an inner peripheral surface facing the internal semiconductive layer and an outer peripheral surface opposite to the inner peripheral surface; an external semiconductive layer that is provided so as to cover the outer periphery of the insulating layer and has semiconductivity; and an external semiconductive layer that is provided so as to cover the outer peripheral surface of the external semiconductive layer and has semiconductivity. The insulating layer comprises a base polymer including a propylene unit, a modified polymer including a propylene unit and modified by at least one selected from an unsaturated organic acid and derivatives thereof, and a thermoplastic elastomer. A ratio of a storage elastic modulus of an inner-side sample of the insulating layer to a storage elastic modulus of an outer-side sample of the insulating layer is 1.1 to 2.5, and a ratio of a volume resistivity of the inner-side sample to a volume resistivity of the outer-side sample is 1.0 to 1.5.

The application discloses a preparation method of a lanthanum ferrite / biochar composite material and application thereof in detection of gas, and belongs to the technical field of gas-sensitive sensor materials. The application first adopts a NaOH solution to treat rice husks, and prepares biochar with a porous structure after calcination, then combines the high specific surface area, porous structure and surface functional groups of the biochar with the P-type semiconductor characteristics and high catalytic activity of LaFeO3, and significantly improves the adsorption capacity and electron transmission efficiency of the composite material to ethanol. Moreover, the LaFeO3 in the composite material obtained by the preparation method of the application is uniformly loaded on the surface of the biochar in the form of regular spherical nanoparticles, and forms a porous interconnected structure, meanwhile, the surface of the biochar still retains rich functional groups such as hydroxyl groups and carboxyl groups, high-sensitivity, low-energy-consumption and high-selectivity detection of ethanol are realized, and the response speed and stability are significantly improved.

The invention belongs to the technical field of ternary transition metal carbide materials, and particularly relates to a semiconductor type layered ternary transition metal carbide and a preparation method and application thereof. The chemical formula of the ternary transition metal carbide is M2SC, wherein the transition metal M is Y or Sc; the ternary transition metal carbide has an Rm type crystal structure. Comprising the following steps: by taking scandium powder or yttrium powder, sublimed sulfur and graphite powder as raw materials, sintering twice to obtain the semiconductor type layered ternary transition metal carbide. The MAX phase with semiconductor properties is obtained based on different valence states of sulfur for accurately adjusting the property of the MAX phase, the chemical formula of the semiconductor type ternary transition metal carbide is Y2SC and Sc2SC, the semiconductor type ternary transition metal carbide has an Rm type crystal structure, the existing MAX phase system is expanded by the material, and the application of the MAX phase material in the field of functional materials such as energy conversion and electronic materials is greatly expanded.

A semiconductor device having good electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. An island-shaped insulating layer containing an oxide is provided in contact with a bottom surface of a semiconductor layer containing a metal oxide exhibiting semiconductor characteristics. The insulating layer containing an oxide is provided in contact with a portion that is a channel formation region of the semiconductor layer, and is not provided in a portion that is a low-resistance region.

The application discloses a crown ether polymer and a preparation method and application thereof, and relates to the technical field of material preparation. The preparation method of the crown ether polymer provided by the application comprises the following steps: mixing HHT (4,4',4'',4'''-(6,7,9,10,17,18,20,21-octahydrodibenzo[B,K][1,4,7,10,13,16]hexaoxacyclooctadecine-2,3,13,14-tetrayl) tetrakisbenzaldehyde) and DBD (2,5-diamino-1,4 benzodithiophene) to prepare a reticular crown ether polymer with rich crown ether and thiazole structures. When the crown ether polymer is used as a light anode protective layer, the active specific surface area of an electrode surface can be improved, and Cl ‑ penetration into the light anode can be prevented, so that the active specific surface area of the light anode cannot be reduced, and the cycle performance of the light anode cannot be reduced. Meanwhile, the crown ether polymer has semiconductor characteristics, and can improve the photo-generated carrier separation efficiency of the light anode.

The invention belongs to the technical field of energy storage electrode materials, and discloses a method for improving the electricity storage performance of a nickel cobaltate cathode through photo-assisted electrochemical oxidation. According to the semiconductor characteristics of nickel cobaltate, the characteristic that the nickel cobaltate can generate photo-induced electrons and holes with high reactivity during illumination is utilized, illumination is assisted in the electrochemical oxidation process, and the surface of the nickel cobaltate is oxidized to form a NiOOH / CoOOH composite layer with high crystallinity under the condition that the morphology structure and the main crystal structure of the nickel cobaltate are kept unchanged. And the formation of the composite layer can enlarge the reaction activity surface and increase a new reaction path, so that the embedding and adsorption of electrolyte ions are enhanced, and the energy storage capacity of the material is improved. The method is low in cost, easy to operate, easy in condition control, short in time consumption and capable of being implemented on a large scale, many difficulties in a traditional method are overcome, and the obtained nickel cobaltate material shows very high specific capacity when used as a cathode of a water-based zinc ion hybrid capacitor.

This invention discloses a spherical plain bearing and a method for monitoring the condition of the spherical plain bearing based on the triboelectric effect. The spherical plain bearing includes an outer ring, an inner ring, a self-lubricating gasket, and a wear-resistant coating. The inner ring is located inside the outer ring, the outer ring has a first surface facing the inner ring, and the inner ring has a second surface facing the outer ring. The self-lubricating gasket is conductive and is located on one of the first and second surfaces. The wear-resistant coating has semiconductor properties and is located on the other of the first and second surfaces. The self-lubricating gasket and the wear-resistant coating are in contact. The inner and outer rings move relative to each other, causing the self-lubricating gasket and the wear-resistant coating to rub against each other and output a DC signal. This invention can generate a DC signal through friction during the relative movement of the inner and outer rings, and then reflect the operating state of the spherical plain bearing through the characteristic parameters of the DC signal, achieving real-time condition monitoring. It features high integration, high signal-to-noise ratio, and reliable monitoring data.

A semiconductor device and a method of fabricating the same are provided. The semiconductor device may include a source electrode, a drain electrode, an insulating region between the source electrode and the drain electrode, and a channel layer. The channel layer may be on the source electrode, the insulating region, and the drain electrode. The channel layer may include a source region on the source electrode, a drain region on the drain electrode, and a channel region on the insulating region. The source region and the drain region may include a precious metal element. The precious metal element in the drain region may be the same as the precious metal element in the source region. The channel region may include a first two-dimensional material layer having precious metal element-based semiconductor characteristics that may be the same as precious metal element-based semiconductor characteristics of the precious metal element.

The application discloses a novel thiazole-based linear polyimide organic semiconductor and a preparation and application thereof in photocatalytic decomposition of water to produce oxygen, and belongs to the field of material preparation. The linear polymer obtained by the application is a kind of crystalline polymer, which is a crystalline porous material with a periodic network structure connected by covalent bonds, has a clear void structure, an ordered pore structure, a large specific surface area, a high porosity, a low density, a semiconductor characteristic of absorbing certain band visible light and exciting photoelectrons, and can be loaded with Co on the semiconductor material by using a traditional stirring method, so that the material can be used for photocatalytic decomposition of water to produce O2 by taking water as a reactant and AgNO3 as an electron sacrificial agent, and therefore has great application potential.

The invention belongs to the technical field of functional membrane material and resource separation, and particularly relates to a conductive MOF layered mineral ion channel membrane as well as a preparation method and application thereof. The ion channel membrane comprises a layered mineral nanosheet framework, conductive MOF crystals grown between layers and a surface polymer coating layer, the layered mineral nanosheet framework is prepared from the following raw materials: montmorillonite, vermiculite or kaolin; the conductive MOF crystal is formed by reacting a divalent metal ion salt with an organic ligand containing a large pi bond; the raw material of the surface polymer coating layer comprises pyrrole. On the basis of a layered mineral two-dimensional ion channel, the semiconductor attributes of pyrrole and conductive MOF are combined, photoelectric coupling is achieved, ion selective separation is improved, and high-flux and high-selectivity lithium and magnesium ion separation is achieved.

The invention discloses a sensing, storage and calculation integrated device of a floating gate type ferroelectric field effect transistor based on a two-dimensional Van der Waals heterostructure, a design and preparation method of the sensing, storage and calculation integrated device, and a bionic optic neuromorphic chip. The device comprises a gate electrode, a barrier layer, a ferroelectric layer, a tunneling layer, a two-dimensional semiconductor layer and source and drain electrodes which are stacked in sequence, the two-dimensional semiconductor layer has a photoelectric response characteristic, and the tunneling layer is configured to enable photon-generated carriers in the two-dimensional semiconductor layer to tunnel to the ferroelectric layer; when the polarization direction of the ferroelectric layer faces the two-dimensional semiconductor layer, the ferroelectric layer has a negative photoconductive effect; and when the polarization direction of the ferroelectric layer deviates from the two-dimensional semiconductor layer, the ferroelectric layer has a positive photoconductive effect. The floating gate type ferroelectric field effect transistor of a Van der Waals heterostructure is constructed, cooperative regulation and control of ferroelectric, dielectric and semiconductor characteristics are achieved, the problems of material compatibility and process integration are solved, and through a photoelectric-ferroelectric multi-field coupling mechanism, the performance of the device is improved. Organic integration of sensing, storage and calculation functions of bidirectional optical signals is realized in a single device.

The application relates to a two-dimensional perovskite semi-floating gate type all-optical control memory, which is mainly used for efficient storage and information processing. The memory comprises a substrate as the lowermost layer; two-dimensional perovskite nanosheets are selected as a photosensitive floating gate layer and are arranged on the upper surface of the substrate; a dielectric layer is arranged on the photosensitive floating gate layer and serves as a charge protection layer; a material with semiconductor properties is selected and arranged on the upper surface of the second dielectric layer and the photosensitive floating gate layer and serves as a channel layer; electrodes are arranged at both ends of the channel layer. Through efficient light absorption and carrier separation characteristics of the two-dimensional perovskite material and in combination with a photo-generated charge capture mechanism of the semi-floating gate structure, data writing, erasing and reading can be completed only by relying on optical signals, and energy consumption is reduced; meanwhile, the thin film characteristics of the two-dimensional perovskite make it easy to be integrated with flexible electronics and optoelectronics, and provide the possibility for high-density and multifunctional memory devices.

The present application belongs to the technical field of organic photoelectric detection, and particularly relates to a Schiff base metal complex, which has the following structural formula: in the formula, M is a divalent metal ion, and R is an alkyl group. Compared with the prior art, the present application has excellent semiconductor characteristics without adding a dopant, has good solubility in an organic solvent, can be prepared into an organic photoelectric transistor active layer by using a low-cost liquid phase process, has excellent ultraviolet spectrum absorption characteristics, thereby improving photoelectric response performance of the transistor to an ultraviolet spectrum, has excellent thermal and chemical stability, and the alkyl chain has a hydrophobic property, so that the application of the present application to an organic photoelectric transistor can further improve the service life and stability of the device. Therefore, the present application provides a new type of semiconductor material for an organic photoelectric transistor.

The invention relates to an X-ray detector based on a carbon-doped sapphire crystal, and belongs to the technical field of X-ray direct detection and semiconductor radiation detectors. The carbon-doped sapphire crystal grown based on an edge-defined film-fed growth method shows semiconductor characteristics for direct detection, efficient collection of X-ray photon-generated carriers is realized through a planar electrode structure, and the sensitivity far higher than that of a traditional silicon-based detector is obtained. The wide bandgap oxide crystal has remarkable advantages in the aspects of irradiation resistance, high-temperature stability, detection efficiency and cost controllability, and the application boundary of the wide bandgap oxide crystal in a radiation detector is expanded.

The application provides a piezoelectric coupling photocatalyst, a preparation method and application thereof, wherein the piezoelectric coupling photocatalyst can couple piezoelectric materials and semiconductor characteristics, combines the photocatalysis and piezoelectric catalysis principles, can realize all-weather algae inhibition with efficiency improvement and speed increase, can couple the wind energy, water wave energy, vibration and solar energy in nature, and provides a new principle and new idea for multi-path utilization of natural energy, energy saving and emission reduction, and has great potential in future energy environment applications.

Provided is a semiconductor device having good electrical characteristics. Provided is a semiconductor device having stable electrical characteristics. An island-shaped insulating layer containing an oxide is provided so as to be in contact with the bottom surface of a semiconductor layer containing a metal oxide exhibiting semiconductor characteristics. An insulating layer containing an oxide is provided so as to be in contact with a portion that is a channel formation region of the semiconductor layer, and is not provided in a portion that is a low-resistance region.