113 results about "Semiconductor properties" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

The invention discloses a gas sensing material and a preparation method thereof, a sensor, a battery and electric equipment. Wherein the gas sensing material comprises a palladium-carbon nanotube composite material, and response gas of the palladium-carbon nanotube composite material under the anaerobic condition comprises at least one of hydrogen, carbon monoxide and ammonia gas. According to the gas sensing material, the gas sensing effect is achieved through the change of the surface resistance of the gas sensing material when palladium metal interacts with target gas, no oxygen participates in the reaction process, and meanwhile charge transfer can be accelerated through the special structure and the semiconductor property of the carbon nanotubes. Through the above mode, the application can realize rapid response to the target gas under an anaerobic condition, and can realize detection of gas produced in the battery.

Provided is a heterojunction structure device. The heterojunction structure device includes: a gate electrode disposed on a substrate; a ferroelectric layer disposed on the gate electrode and including a material having ferroelectric characteristics; a channel layer disposed on the ferroelectric layer and including a material having ferroelectric and semiconductor characteristics; and a source electrode and a drain electrode disposed on the channel layer while being spaced apart from each other.

The invention discloses semiconductor hydrogel as well as a preparation method and application thereof. The semiconductor hydrogel is hydrogel obtained by ionic crosslinking of a water-soluble conjugated polymer with semiconductor performance, can be prepared into single-network semiconductor hydrogel and can also be compounded with an existing hydrogel network to form multi-network hydrogel, and the hydrogel with the semiconductor performance, the biological function and the mechanical performance is achieved. The semiconductor hydrogel is used as a semiconductor material to realize preparation of an electrochemical transistor, is further used for construction of a complementary logic circuit and detection and amplification of an electrophysiological signal, is expected to replace a traditional semiconductor and becomes a key material of a bioelectronic device.

The invention discloses a material classification method and device based on an ultraviolet electron spectrum, a medium and a product, and relates to the technical field of material surface science and data analysis. The method comprises the following steps: acquiring ultraviolet light electron energy spectrum data of a target material to be analyzed, and extracting a first spectrum curve from the energy spectrum data; obtaining a conductor characteristic identification result of the target material according to the first spectrum curve; under the condition of determining that the target material does not have the conductor characteristics based on the conductor characteristic identification result, extracting a second spectrum curve in a preset valence band top energy interval extending towards the negative energy direction by taking the Fermi level as a starting point from the ultraviolet light electron spectrum data, and performing multi-dimensional characteristic fusion on the second spectrum curve, generating a semiconductor characteristic identification result of the target material based on the fusion result; and determining a classification result of the target material according to the semiconductor characteristic identification result. According to the scheme, the conductive attributes of the target material can be quickly and accurately classified.

The invention relates to the technical field of gas sensors, in particular to a sensing material based on nanoparticle loading, a preparation method of the sensing material and a gas sensor, and the sensing material comprises a substrate material and transition metal nanoparticles and / or precious metal alloy nanoparticles loaded on the surface of the substrate material; the substrate material comprises one or more of defect oxide, MOF, sulfide, carbide, MXene and phosphide. The semiconductor characteristic of the substrate material is combined with the hydrogen dissociation capability of the transition metal nanoparticles and / or the noble metal alloy nanoparticles, so that the adsorption and dissociation efficiency of hydrogen can be improved; by loading the nanoparticles on the substrate material, the interface hydrogen overflow process is regulated and controlled, the energy barrier of hydrogen overflow is reduced, and the sensitivity and response speed of the hydrogen sensor are further improved. By optimizing the interface structure between the nanoparticles and the substrate material, the process of interface hydrogen overflow is improved, and the hydrogen sensing performance is improved.

The embodiment of the invention provides an all-weather piezoelectric coupling photocatalyst as well as a preparation method and application thereof, the piezoelectric photocatalyst prepared by the embodiment of the invention can couple the characteristics of a piezoelectric material and a semiconductor, combines the principles of photocatalysis and piezoelectric catalysis, not only can realize all-weather algal inhibition with improved efficiency and speed, but also can realize all-weather algal inhibition with improved efficiency and speed. The wind energy, the water wave energy, the vibration and the solar energy in the nature can be coupled into a whole, a new principle and a new thought are provided for multi-path utilization, energy conservation and emission reduction of natural energy, and huge potential is achieved in future energy environment application.

The invention discloses a nonvolatile memory device based on CrMoGe2S6 / Ga2O3 heterostructure tensile strain and a construction method, and belongs to the technical field of nonvolatile memory devices. Comprising the following steps: vertically stacking a single layer of Ga2O3 and a single layer of CrMoGe2S6, and constructing two kinds of CrMoGe2S6 / Ga2O3 heterostructures; performing biaxial tensile strain on the CrMoGe2S6 / Ga2O3 heterostructure, calculating a magnetic ground state and an energy band of the CrMoGe2S6 / Ga2O3 heterostructure under different strains, and screening out the CrMoGe2S6 / Ga2O3 heterostructure which is represented as a ferromagnetic state; and on the basis of the screened CrMoGe2S6 / Ga2O3 heterostructures, two CrMoGe2S6 / Ga2O3 heterostructures with the same tensile strain are selected to construct the nonvolatile memory device. Ferroelectric Ga2O3 is introduced to serve as a switch, the electronic property of CrMoGe2S6 is controlled by the polarization state of Ga2O3, the Ga2O3 which is electrically polarized upward P does not change the semiconductor characteristic of CrMoGe2S6, and the Ga2O3 which is electrically polarized downward P enables the CrMoGe2S6 to present semimetallic property; therefore, the non-volatile electric control of the CrMoGe2S6 between the antiferromagnetic semiconductor and the semimetal is indirectly realized; the characteristic is especially important for a memory device, and can significantly reduce energy consumption and improve data stability.

The invention provides a performance prediction method for a hafnium oxide semiconductor material structure, and relates to the technical field of semiconductor material research and development. The method comprises the following steps: performing global search in an Hf-O binary system by using crystal structure prediction software, determining the most stable two-dimensional Hf2O4 crystal structure, and further confirming the crystal configuration through structure optimization; calculating an Hf2O4 crystal structure by using density functional theory calculation software, and evaluating the dynamic, thermodynamic and mechanical stability of Hf2O4 by using a calculation result system; the electronic property of the Hf2O4 is obtained through further deep calculation, and the structural stability and semiconductor characteristics of the Hf2O4 are verified. According to the invention, through the first principle and the evolutionary algorithm calculation, the simulation calculation is used to replace the traditional trial-and-error experiment, and the novel semiconductor material with high reliability can be efficiently explored; a theoretical basis is provided for the design of a novel high-performance semiconductor material in advanced chip manufacturing, the research and development period can be expected to be remarkably shortened, and the cost can be reduced.

Provided is a heterojunction structure device. The heterojunction structure device includes: a gate electrode (200) disposed on a substrate (100); a ferroelectric layer (300) disposed on the gate electrode and including a material having ferroelectric characteristics; an insulating layer (400) on the ferroelectric layer; a channel layer (500) disposed on the insulating layer and including a material having ferroelectric and semiconductor characteristics; and a source electrode (S) and a drain electrode (D) disposed on the channel layer while being spaced apart from each other.

A crystalline oxide film containing gallium as a main component, in which when CuKα rays are made incident on the crystalline oxide film to perform X-ray diffraction, a reflection output in scanning ω and 2θ has a local maximum point when 16.20°<2θ<39.90° and 20.30°<ω<32.20° at an angle φ around a φ axis orthogonal to a surface of the crystalline oxide film at the angle φ where a peak attributable to the crystalline oxide film by ω-2θ measurement is maximum, and 40.10°<ω+θ<40.40° relative to ω and θ at which the reflection output reaches a maximum is satisfied. This provides the crystalline oxide film, a laminated structure, a semiconductor device with excellent semiconductor properties, particularly excellent withstand voltage, and a method for producing a crystalline oxide film.

The application discloses a three-dimensional ferroelectric material based on two-dimensional ice stacking and preparation and application thereof, and belongs to the technical field of ferroelectric materials and multifunctional devices. The material is a three-dimensional periodic crystal structure of monoclinic P21 space group, water molecules in the material form a completely saturated network through hydrogen bonds, and there is no suspended hydrogen; interlayers are coupled through van der Waals force to form a multi-level cooperative ferroelectric sequence of "in-plane hydrogen bond ferroelectric + interlayer van der Waals ferroelectric". The material has the characteristics of a wide-bandgap semiconductor (band gap 5-6 eV), extreme anisotropic mechanical properties (Z-axis Young's modulus 48.6 GPa, Eyx=0.973), moderate bulk modulus (12.23 GPa), good acoustic performance (sound velocity 2638 m / s) and extremely high pressure stability (0-3000 GPa structure is complete, 1190 GPa metalization transition). The material can be widely applied in the fields of X-ray optical devices, ferroelectric memories, deep ultraviolet photoelectric detectors, extreme high-pressure sensors, directional stress sensors, mechanical logic devices, surface acoustic wave filters, multifunctional integrated microsystems and multi-parameter composite sensing networks, and opens up a new direction for pure water-based functional materials.

This application discloses a two-dimensional germanium-based perovskite ferroelectric semiconductor material, its preparation method, and its applications, belonging to the field of materials science. The molecular formula of the two-dimensional germanium-based perovskite ferroelectric semiconductor material is [CH3(CH2)]. n The molecule is NH3]2CsGe2I7, where n = 2, 3, or 4. This material possesses excellent physicochemical properties, such as semiconductor characteristics, ferroelectricity, and piezoelectricity. The preparation method of this invention allows for the preparation of this material using a simple solution method at low cost. This material has potential applications in ferroelectric, optoelectronic, and other fields.

The invention relates to the technical field of semiconductor materials, in particular to a tellurium-doped selenide semiconductor material and a preparation method thereof. The chemical formula of the tellurium-doped selenide semiconductor material is FeIn2Se4-xTex, x is more than 0 and less than or equal to 1.5, and the crystal structure is a rhombohedral phase (R-3m). Compared with FeIn2Se4, the tellurium-doped selenide semiconductor material provided by the invention has the advantages that the band gap is changed, the conductivity in the temperature range of 600-750 K is obviously reduced, different semiconductor properties can be provided, and the variety of FeIn2Se4-based materials is enriched.

The application provides a nanometer memory for ultra-high density data storage and a preparation method thereof, wherein a receptor group is reasonably introduced into an amphiphilic block copolymer, micelles are self-assembled to form storage units, and the preparation of the nanometer memory is realized by arraying the micelles through the induction of a nanometer array substrate. The application has the advantages that the micelles self-assembled by the amphiphilic block copolymer are uniform in size, the obtained micelles can be regularly arrayed under the induction of the substrate, and the micelles in the substrate have good semiconductor characteristics and can be applied to the development of memory devices as nanometer storage units. Compared with traditional storage devices, the innovative method greatly reduces the size of the storage units and opens up a new way for the further development of ultra-high density data storage.

Provided are a semiconductor electricity storage material, an electricity storage body, and a laminated electricity storage body, each of which is composed of a biological material and has both semiconductor characteristics and electricity storage characteristics. The present invention relates to a fiber sheet having a fiber mainly composed of chitin or chitosan, formed in a sheet shape, and having a density of 2 g / cm3 or less. The fibers are preferably crystalline fibers / amorphous fibers, and are preferably composed of bundles or granular aggregates of chitin nanofibers or chitosan nanofibers having a width of 3-400 nm. In addition, the semiconductor is preferably an n-type bulk material semiconductor, and preferably has an N-type negative resistance.

The invention discloses a preparation method of a liquid crystal polymer and a composition thereof and application of the liquid crystal polymer and the composition in electromagnetic shielding materials, and relates to the technical field of organic polymer materials. The invention aims to solve the problem that the conventional electromagnetic shielding material cannot have high mechanical property, conductivity and processability at the same time. According to the invention, thiophene molecules are introduced into the molecular structure of the liquid crystal polymer, so that the liquid crystal polymer has a certain conductive characteristic, and a pi electron cloud in the thiophene molecules forms a conjugated system in the molecules, so that electrons can be freely transmitted in the molecules, thereby generating a semiconductor characteristic. And then the liquid crystal polymer with the conductive property is compounded with a certain amount of carbon fibers, so that the surface resistivity of the material is further reduced, the conductive performance is improved, and the good electromagnetic shielding effectiveness is further obtained. The invention can obtain the preparation method of the liquid crystal polymer and the composition thereof and the application of the liquid crystal polymer and the composition thereof in an electromagnetic shielding material.

This invention discloses a quantitative simulation method and system for the deep-level transient spectrum of irradiated semiconductors, belonging to the field of semiconductor irradiation technology. The method includes: acquiring the property parameters of the semiconductor and its irradiation defects; determining the defect types and inter-defect reaction paths in the annealing simulation based on the defect property parameters; using the semiconductor property parameters and the irradiation-induced PKA energy spectrum as input conditions, simulating the spatial distribution of initial point defects using the MC method; using the spatial distribution of initial point defects as initial conditions, and the defect property parameters and inter-defect reaction paths as input, simulating the types and concentrations of surviving defects after annealing using the OKMC method; using the property parameters and concentrations of surviving defects as input, solving the defect rate equation based on SRH theory, and substituting it into the theoretical formula for the DLTS output signal to obtain the quantitatively simulated DLTS. This invention can quantitatively simulate the DLTS of irradiated semiconductors and provide the micro-defect types and their specific proportions corresponding to different DLTS peaks.

An electronic device includes a Plackett-Burman design (PBD) execution circuit, a genetic algorithm (GA) execution circuit, and a control circuit. The PBD execution circuitry is configured to generate an initial experimental design (DOE) set that includes a plurality of initial cases regarding semiconductor characteristics of a memory device of an external device. The GA execution circuitry is configured to convert a previous generation of DOE set to a next generation of DOE set. The control circuit is configured to transmit the initial DOE set to an external device, receive an initial characteristic evaluation from the external device, generate an initial DOE set based on the initial characteristic evaluation, and control the genetic algorithm to be executed with an experimental result of the initial DOE set as an input. Each initial case of the plurality of initial cases corresponds to a combination of a plurality of setting values that affect semiconductor characteristics.

The application provides a wafer-level room-temperature monolayer magnetic semiconductor thin film and a preparation method thereof, and relates to the technical field of two-dimensional magnetic semiconductor material preparation.The present application is based on a three-temperature-zone low-pressure chemical vapor deposition system, and the wafer-level controllable preparation of a single-cell thickness spinel structure Fe2GaO4 thin film is realized through the following steps: the partitioned treatment of Te powder, metal precursors and sapphire substrates in three temperature zones, and the preparation method of sequentially blowing and replacing by inert carrier gas and hydrogen-argon mixed gas, segmented preheating and temperature rising, oxygen regulation and control and in-situ heat preservation annealing.Meanwhile, the prepared Fe2GaO4 thin film has a thickness of only 0.53 nm, a Curie temperature of more than 300 K, intrinsic ferromagnetism at room temperature, clear optical band gap and semiconductor characteristics, and can be widely applied to various new-type spin electronic devices.

The present invention relates to a SERS substrate based on a silver-covalent organic framework heterojunction and a preparation method and application thereof, belonging to the technical field of analysis and detection. The SERS substrate based on a silver-covalent organic framework heterojunction of the present invention comprises an amidoxime-modified covalent organic framework material and silver nanoparticles adsorbed on the amidoxime-modified covalent organic framework material. COF-TpDb-AO with semiconductor characteristics can improve the Raman signal intensity through the chemical enhancement effect, and the silver nanoclusters produce a strong electromagnetic enhancement effect. The SERS substrate significantly improves the detection sensitivity (the detection limit is as low as 7.4×10 ‑9 mol / L), and the enhancement factor (EF) was 1.26×10 6 .

The application discloses a terpyridine zinc complex and a preparation method and application thereof, and belongs to the technical field of materials. The terpyridine zinc complex has the following molecular structure: wherein X is a counter anion; R1 and R2 are independently selected from a nitrogen heterocyclic unit, a benzene ring unit or a triphenylamine unit. The terpyridine zinc complex has a semiconductor property, can generate hydrogen peroxide under sunlight together with water and oxygen, and can be applied as a photosensitizer or a photocatalyst.

A film forming method that sprays mist on a heated substrate from a nozzle to form a crystalline oxide film by a mist CVD method, wherein the nozzle for use in the method includes at least two or more opposing gas inlets, a gas mixing unit having the gas inlets, and a gas outlet from which the mist is sprayed, and a linear velocity L (cm / sec) of the mist at any one of the two or more opposing gas inlets satisfies L≥0.8V-200, wherein V (cm3) represents a volume of the gas mixing unit. Thus, a film forming method for forming a crystalline oxide film, has excellent crystallinity and a favorable in-plane film thickness distribution even with a large area and a thin film thickness, and has excellent semiconductor properties when applied to a semiconductor device; and a film forming apparatus for performing the film forming method.

To provide a semiconductor device that can improve its characteristics, and a method for manufacturing the same.SOLUTION: According to an embodiment, a semiconductor device includes first to third electrodes and a semiconductor member. The semiconductor member includes a first semiconductor region and a second semiconductor region. The first semiconductor region includes Alx1Ga1-x1 N(0≤x1<1) and contains carbon. A first concentration of hydrogen in a sixth partial region of the first semiconductor region is lower than a second concentration of hydrogen in a fifth partial region of the first semiconductor region. The second semiconductor region includes Alx2Ga1-x2 N(x1<x2≤1). The second semiconductor region includes a first semiconductor portion.SELECTED DRAWING: Figure 1

The application relates to a thin film temperature sensor and a preparation method and a temperature field measurement method thereof, and belongs to the technical field of temperature sensors. The thin film temperature sensor has semiconductor characteristics. The thin film temperature sensor comprises SiBCN ceramics and fillers. The thin film temperature sensor provided by the application has high compactness, good surface quality, strong bonding capacity with a substrate, and is not easy to fall off. The thin film temperature sensor has obvious semiconductor characteristics in the range of 0-800 DEG C, and can meet the temperature field measurement requirements of workpiece surfaces of different materials, planes, curved surfaces and special-shaped structures under high-temperature working conditions.

The invention discloses an indium phosphide polycrystalline material crucible charging method and application thereof, and belongs to the technical field of semiconductor materials. The charging method comprises the following steps: sequentially adding indium phosphide single crystal seeds, an indium phosphide polycrystal material I, a high-purity red phosphorus doped layer, an indium phosphide polycrystal material II, a high-purity indium sulfide doped layer, an indium phosphide polycrystal material III, a liquid sealing agent adding layer, an indium phosphide polycrystal material IV and a cake-shaped indium phosphide polycrystal material into a crucible; wherein the average particle sizes of the indium phosphide polycrystal materials used in the indium phosphide polycrystal material I, the indium phosphide polycrystal material II and the indium phosphide polycrystal material III are sequentially increased. The heat conduction efficiency of the electric heating system of the single crystal furnace to the crucible is effectively improved, melting and fusion of polycrystal materials in the crucible are accelerated, the distribution uniformity of indium phosphide single crystal rod materials and the uniformity of semiconductor properties can be effectively improved, the yield of indium phosphide single crystals is further remarkably improved, and finally the quality of the indium phosphide single crystals is effectively improved.

The invention discloses a super-junction silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device and a preparation method thereof, relates to a power semiconductor device, and aims at solving the problems of a super-junction silicon carbide MOSFET in the prior art. The super-junction silicon carbide MOSFET device provided by the invention is internally provided with more than one first conductive type columnar groove which is periodically arranged; a silicon dioxide layer grows on the wall of the first conductive type columnar groove, the groove is filled with a filling layer with the characteristics of a first conductive type semiconductor, and the upper surface of the second conductive type lightly doped epitaxial layer and the two sides of the first conductive type columnar groove are provided with first conductive type body regions which are periodically arranged. The upper surface of the first conductive type body region is provided with a second conductive type heavily-doped source region and a first conductive type heavily-doped ohmic contact region which are adjacent to each other. According to the technical scheme of the invention, the cost increase caused by epitaxy is reduced, the transfer of the wafer between a processing factory and an epitaxy factory is avoided, and better device quality control is realized.

The invention discloses a bismuth-based perovskite crystal material and a preparation method thereof, the chemical formula of the material is ABI2X8, A represents three different types of positive divalent organic amine cations, and X represents I, Br or Cl; the perovskite is prepared by taking a bismuth source and haloid acid as raw materials and different types of organic amines as structure-directing agents through solvothermal reaction in methanol. The preparation method is easy and convenient to operate and good in repeatability, the photoelectric property of the material can be effectively regulated and controlled by changing different types of organic amines, meanwhile, the toxic element lead is replaced with the metal element bismuth, and harm to the human body and pollution to the environment are reduced. The material disclosed by the invention is good in thermal stability, water stability and acid stability, excellent in photoelectric property and good in semiconductor performance, and has a wide application prospect in the fields of solar cells, photoelectric materials, photoelectric detection, X-ray detection, photoelectrocatalysis and the like.

Disclosed is a p-type or n-type composition for thermoelectric conversion elements, which contains nanocarbons, an epoxy compound, and a curing agent that reacts with the epoxy compound, and which does not substantially contain a dopant that imparts p-type or n-type semiconductor characteristics to the nanocarbons, wherein, with respect to the epoxy compound and the curing agent, the nanocarbons exhibit p-type or n-type semiconductor characteristics in the epoxy resin after a reaction. Also disclosed are a thermoelectric conversion element and a thermoelectric conversion module, which use the composition for thermoelectric conversion elements.

This invention provides a viscous flow-state carbazole-indole-based narrow-band blue-violet luminescent material, its preparation method, and its applications, belonging to the field of organic light-emitting materials. The viscous flow-state carbazole-indole-based blue-violet luminescent material prepared by this invention has a main blue-emitting framework obtained by connecting two phenyl groups at positions 2 and 10 of the carbazole-indole group, followed by flexible chain modification at positions 2 and 6 of the benzene group. Its core characteristic is that the molecule exhibits a viscous flow state and displays semiconductor properties. The luminescent material prepared by this invention has a regular molecular structure, good structural extensibility, good solubility, and excellent luminous efficiency, and can be used as a main luminescent material or a plasticized semiconductor molecule, thus showing great application prospects in the field of OLED displays.