147 results about "Semiconductor properties" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

The invention provides a heat dissipation optimization method and system for a graphene semiconductor, and relates to the technical field of graphene semiconductors, and the method comprises the steps: determining a honeycomb structure based on a graphene semiconductor material which has a heat radiation coefficient identifier and a heat conduction coefficient identifier; configuring a plurality of heat dissipation flow lines corresponding to different heat dissipation modes; configuring a plurality of heat dissipation distribution maps corresponding to different heat dissipation modes; analyzing the influence of the band gap on the thermal radiation characteristic, and determining a first semiconductor characteristic influence index; analyzing the influence of the band gap on the heat conduction characteristic, and determining a second semiconductor characteristic influence index; and establishing a heat dissipation performance evaluation model, and performing heat dissipation iterative optimization in combination with the plurality of heat dissipation flow lines and the plurality of heat dissipation distribution maps. The technical problem that stable heat dissipation performance cannot be provided in diversified application scenes due to the fact that the heat dissipation design in the prior art is difficult to flexibly adapt to the requirements of different heat dissipation modes is solved.

The invention discloses an intelligent cutter system with a multi-signal sensing function and a manufacturing method of the intelligent cutter system, and relates to the field of intelligent cutting tools for ultra-precision machining. The method comprises the steps that boron ions and sulfur ions are doped in a multi-layer gradient doping mode through a multi-step ion implantation method in a front tool nose area and a front tool face area of the single crystal diamond tool, so that the single crystal diamond tool has the conductivity of a semiconductor; the multi-layer gradient doping mode comprises shallow-layer doping, middle-layer doping and deep-layer doping, and the concentration and depth distribution of boron ions and sulfur ions can be controlled by the multi-layer gradient doping mode, so that the concentration of a tool nose area is the highest; the single crystal diamond cutter with the conduction characteristic of a semiconductor is connected with a signal processing and transmission circuit through a platinum electrode, so that the intelligent cutter capable of sensing force, temperature and vibration at the same time and monitoring the cutting state and the cutter abrasion state in real time is obtained. By means of the scheme, the cutting force, the cutting heat degree and the vibration signals in the cutting process can be accurately detected at the same time.

The invention relates to an SERS (Surface Enhanced Raman Scattering) substrate based on a silver-covalent organic framework heterojunction as well as a preparation method and application of the SERS substrate, and belongs to the technical field of analysis and detection. The SERS substrate based on the silver-covalent organic framework heterojunction comprises an amidoxime group modified covalent organic framework material and silver nanoparticles adsorbed on the amidoxime group modified covalent organic framework material. The COF-TpDb-AO with semiconductor characteristics can improve the Raman signal intensity through a chemical enhancement effect, the silver nanocluster generates a strong electromagnetic enhancement effect, the SERS substrate significantly improves the detection sensitivity (the detection limit is as low as 7.4 * 10 <-9 > mol / L) through the cooperation of electromagnetism and the chemical enhancement effect, and the enhancement factor (EF) is 1.26 * 10 < 6 >.

The invention discloses a gas sensing material and a preparation method thereof, a sensor, a battery and electric equipment. Wherein the gas sensing material comprises a palladium-carbon nanotube composite material, and response gas of the palladium-carbon nanotube composite material under the anaerobic condition comprises at least one of hydrogen, carbon monoxide and ammonia gas. According to the gas sensing material, the gas sensing effect is achieved through the change of the surface resistance of the gas sensing material when palladium metal interacts with target gas, no oxygen participates in the reaction process, and meanwhile charge transfer can be accelerated through the special structure and the semiconductor property of the carbon nanotubes. Through the above mode, the application can realize rapid response to the target gas under an anaerobic condition, and can realize detection of gas produced in the battery.

A vertical NAND flash memory device and an electronic apparatus including the same are provided. The vertical NAND flash memory device includes a plurality of cell arrays. Each of the plurality of cell arrays includes a channel layer, a charge trap layer, and a plurality of gate electrodes provided on the charge trap layer. The charge trap layer includes a matrix including amorphous metal oxynitride and nanocrystals dispersed in the matrix and including nitride having semiconductor characteristics.

Provided is a heterojunction structure device. The heterojunction structure device includes: a gate electrode disposed on a substrate; a ferroelectric layer disposed on the gate electrode and including a material having ferroelectric characteristics; a channel layer disposed on the ferroelectric layer and including a material having ferroelectric and semiconductor characteristics; and a source electrode and a drain electrode disposed on the channel layer while being spaced apart from each other.

The invention discloses semiconductor hydrogel as well as a preparation method and application thereof. The semiconductor hydrogel is hydrogel obtained by ionic crosslinking of a water-soluble conjugated polymer with semiconductor performance, can be prepared into single-network semiconductor hydrogel and can also be compounded with an existing hydrogel network to form multi-network hydrogel, and the hydrogel with the semiconductor performance, the biological function and the mechanical performance is achieved. The semiconductor hydrogel is used as a semiconductor material to realize preparation of an electrochemical transistor, is further used for construction of a complementary logic circuit and detection and amplification of an electrophysiological signal, is expected to replace a traditional semiconductor and becomes a key material of a bioelectronic device.

The invention discloses a material classification method and device based on an ultraviolet electron spectrum, a medium and a product, and relates to the technical field of material surface science and data analysis. The method comprises the following steps: acquiring ultraviolet light electron energy spectrum data of a target material to be analyzed, and extracting a first spectrum curve from the energy spectrum data; obtaining a conductor characteristic identification result of the target material according to the first spectrum curve; under the condition of determining that the target material does not have the conductor characteristics based on the conductor characteristic identification result, extracting a second spectrum curve in a preset valence band top energy interval extending towards the negative energy direction by taking the Fermi level as a starting point from the ultraviolet light electron spectrum data, and performing multi-dimensional characteristic fusion on the second spectrum curve, generating a semiconductor characteristic identification result of the target material based on the fusion result; and determining a classification result of the target material according to the semiconductor characteristic identification result. According to the scheme, the conductive attributes of the target material can be quickly and accurately classified.

[Problem] To provide: a semiconductor electricity storage material formed from a bio-material and having semiconductor properties and electricity storage properties; an electricity storage body; and a layered electricity storage body. [Solution] The present invention has fibers containing chitin or chitosan as the primary component, is in the form of a sheet, and has a density of 2 g / cm3 or less. Preferably the fibers are crystallized or amorphous fibers. Preferably the fibers are chitosan nanofibers having a width of 3 to 400 nm, or are formed from bundles or particle-like aggregates of chitosan fibers. Preferably the semiconductor is an n-type bulk semiconductor and preferably has N-type negative resistance.

The invention relates to the technical field of gas sensors, in particular to a sensing material based on nanoparticle loading, a preparation method of the sensing material and a gas sensor, and the sensing material comprises a substrate material and transition metal nanoparticles and / or precious metal alloy nanoparticles loaded on the surface of the substrate material; the substrate material comprises one or more of defect oxide, MOF, sulfide, carbide, MXene and phosphide. The semiconductor characteristic of the substrate material is combined with the hydrogen dissociation capability of the transition metal nanoparticles and / or the noble metal alloy nanoparticles, so that the adsorption and dissociation efficiency of hydrogen can be improved; by loading the nanoparticles on the substrate material, the interface hydrogen overflow process is regulated and controlled, the energy barrier of hydrogen overflow is reduced, and the sensitivity and response speed of the hydrogen sensor are further improved. By optimizing the interface structure between the nanoparticles and the substrate material, the process of interface hydrogen overflow is improved, and the hydrogen sensing performance is improved.

The invention discloses a semiconductor electrolyte of a mode-switchable photoelectrode device for producing H2O2 and generating power and application of the semiconductor electrolyte. The semiconductor property of the semiconductor electrolyte is p-n type, and the nitrogen-doped carbon quantum dots are obtained by taking betaine as a carbon source and ammonia water, urea or pyridine and the like as a nitrogen source and carrying out hydrothermal reaction at 180-220 DEG C for 5-12 hours. The semiconductor electrolyte is matched with double photoelectrodes and can be assembled into photoelectrode devices in a single-chamber mode and a double-chamber mode. No electric field is added, only optical radiation is added, hydrogen peroxide can be prepared in a high-selectivity mode in a double-chamber mode, and power can be supplied to the outside continuously for hundreds of hours in a single-chamber mode. The semiconductor electrolyte has the advantages of cheap and easily available raw materials, simple synthesis, low cost and large-scale preparation. And the photoelectrode device with the switchable mode, which is formed by the photoelectrode, is simple in structure and excellent in performance, and has a wider application prospect in the fields of daily production, life and the like.

The embodiment of the invention provides an all-weather piezoelectric coupling photocatalyst as well as a preparation method and application thereof, the piezoelectric photocatalyst prepared by the embodiment of the invention can couple the characteristics of a piezoelectric material and a semiconductor, combines the principles of photocatalysis and piezoelectric catalysis, not only can realize all-weather algal inhibition with improved efficiency and speed, but also can realize all-weather algal inhibition with improved efficiency and speed. The wind energy, the water wave energy, the vibration and the solar energy in the nature can be coupled into a whole, a new principle and a new thought are provided for multi-path utilization, energy conservation and emission reduction of natural energy, and huge potential is achieved in future energy environment application.

The invention is applicable to the technical field of organic photocatalysts, and provides a novel pillararene polymer material as well as a preparation method and application thereof. The metal-free organic catalyst polymer material TpAP [n] with semiconductor characteristics is designed and prepared by introducing supramolecular macrocyclic pillar aromatic hydrocarbon as a construction unit, the metal-free organic catalyst polymer material TpAP [n] is synthesized through a Schiff base condensation reaction, the unique interlayer ordered stacking limits the recombination of current carriers, an effective electron-hole transmission path is formed, and the metal-free organic catalyst polymer material TpAP [n] can be used for preparing a semiconductor material. More active sites are provided, and efficient contact between reactants and a catalytic center is facilitated. Experimental results show that the material can remarkably increase the generation rate of H2O2 under the illumination condition and shows excellent photocatalytic performance, the preparation process is environmentally friendly and conforms to the green chemistry principle, and a support and a theoretical basis are provided for design and preparation of subsequent series of metal-free organic catalysts.

The invention discloses a nonvolatile memory device based on CrMoGe2S6 / Ga2O3 heterostructure tensile strain and a construction method, and belongs to the technical field of nonvolatile memory devices. Comprising the following steps: vertically stacking a single layer of Ga2O3 and a single layer of CrMoGe2S6, and constructing two kinds of CrMoGe2S6 / Ga2O3 heterostructures; performing biaxial tensile strain on the CrMoGe2S6 / Ga2O3 heterostructure, calculating a magnetic ground state and an energy band of the CrMoGe2S6 / Ga2O3 heterostructure under different strains, and screening out the CrMoGe2S6 / Ga2O3 heterostructure which is represented as a ferromagnetic state; and on the basis of the screened CrMoGe2S6 / Ga2O3 heterostructures, two CrMoGe2S6 / Ga2O3 heterostructures with the same tensile strain are selected to construct the nonvolatile memory device. Ferroelectric Ga2O3 is introduced to serve as a switch, the electronic property of CrMoGe2S6 is controlled by the polarization state of Ga2O3, the Ga2O3 which is electrically polarized upward P does not change the semiconductor characteristic of CrMoGe2S6, and the Ga2O3 which is electrically polarized downward P enables the CrMoGe2S6 to present semimetallic property; therefore, the non-volatile electric control of the CrMoGe2S6 between the antiferromagnetic semiconductor and the semimetal is indirectly realized; the characteristic is especially important for a memory device, and can significantly reduce energy consumption and improve data stability.

The invention provides a performance prediction method for a hafnium oxide semiconductor material structure, and relates to the technical field of semiconductor material research and development. The method comprises the following steps: performing global search in an Hf-O binary system by using crystal structure prediction software, determining the most stable two-dimensional Hf2O4 crystal structure, and further confirming the crystal configuration through structure optimization; calculating an Hf2O4 crystal structure by using density functional theory calculation software, and evaluating the dynamic, thermodynamic and mechanical stability of Hf2O4 by using a calculation result system; the electronic property of the Hf2O4 is obtained through further deep calculation, and the structural stability and semiconductor characteristics of the Hf2O4 are verified. According to the invention, through the first principle and the evolutionary algorithm calculation, the simulation calculation is used to replace the traditional trial-and-error experiment, and the novel semiconductor material with high reliability can be efficiently explored; a theoretical basis is provided for the design of a novel high-performance semiconductor material in advanced chip manufacturing, the research and development period can be expected to be remarkably shortened, and the cost can be reduced.

Provided is a heterojunction structure device. The heterojunction structure device includes: a gate electrode (200) disposed on a substrate (100); a ferroelectric layer (300) disposed on the gate electrode and including a material having ferroelectric characteristics; an insulating layer (400) on the ferroelectric layer; a channel layer (500) disposed on the insulating layer and including a material having ferroelectric and semiconductor characteristics; and a source electrode (S) and a drain electrode (D) disposed on the channel layer while being spaced apart from each other.

A crystalline oxide film containing gallium as a main component, in which when CuKα rays are made incident on the crystalline oxide film to perform X-ray diffraction, a reflection output in scanning ω and 2θ has a local maximum point when 16.20°<2θ<39.90° and 20.30°<ω<32.20° at an angle φ around a φ axis orthogonal to a surface of the crystalline oxide film at the angle φ where a peak attributable to the crystalline oxide film by ω-2θ measurement is maximum, and 40.10°<ω+θ<40.40° relative to ω and θ at which the reflection output reaches a maximum is satisfied. This provides the crystalline oxide film, a laminated structure, a semiconductor device with excellent semiconductor properties, particularly excellent withstand voltage, and a method for producing a crystalline oxide film.

A vertical NAND flash memory device and an electronic apparatus including the same are provided. The vertical NAND flash memory device includes a plurality of cell arrays. Each of the plurality of cell arrays includes a channel layer, a charge trap layer, and a plurality of gate electrodes provided on the charge trap layer. The charge trap layer includes a matrix including amorphous metal oxynitride and nanocrystals dispersed in the matrix and including nitride having semiconductor characteristics.

The application discloses a three-dimensional ferroelectric material based on two-dimensional ice stacking and preparation and application thereof, and belongs to the technical field of ferroelectric materials and multifunctional devices. The material is a three-dimensional periodic crystal structure of monoclinic P21 space group, water molecules in the material form a completely saturated network through hydrogen bonds, and there is no suspended hydrogen; interlayers are coupled through van der Waals force to form a multi-level cooperative ferroelectric sequence of "in-plane hydrogen bond ferroelectric + interlayer van der Waals ferroelectric". The material has the characteristics of a wide-bandgap semiconductor (band gap 5-6 eV), extreme anisotropic mechanical properties (Z-axis Young's modulus 48.6 GPa, Eyx=0.973), moderate bulk modulus (12.23 GPa), good acoustic performance (sound velocity 2638 m / s) and extremely high pressure stability (0-3000 GPa structure is complete, 1190 GPa metalization transition). The material can be widely applied in the fields of X-ray optical devices, ferroelectric memories, deep ultraviolet photoelectric detectors, extreme high-pressure sensors, directional stress sensors, mechanical logic devices, surface acoustic wave filters, multifunctional integrated microsystems and multi-parameter composite sensing networks, and opens up a new direction for pure water-based functional materials.

To provide a laminated structure that includes a crystalline oxide film having a corundum structure with a smooth surface and has an excellent semiconductor property when being applied to a semiconductor device.SOLUTION: A laminated structure includes: a base substrate; and a crystalline oxide film having a corundum structure. The crystalline oxide film includes at least carbon (C) as an impurity and has root mean square roughness (RMS) of 0.1 μm or less.SELECTED DRAWING: Figure 1

A vertical NAND flash memory device and an electronic device including the same are provided. The vertical NAND flash memory device includes a plurality of cell arrays. The plurality of cell arrays each include a channel layer, a charge trapping layer disposed on the channel layer, and a plurality of gate electrodes disposed on the charge trapping layer. The charge trapping layer includes a matrix and nanocrystals dispersed in the matrix and including a nitride having semiconductor properties, the matrix including an amorphous metal oxynitride.

This application discloses a two-dimensional germanium-based perovskite ferroelectric semiconductor material, its preparation method, and its applications, belonging to the field of materials science. The molecular formula of the two-dimensional germanium-based perovskite ferroelectric semiconductor material is [CH3(CH2)]. n The molecule is NH3]2CsGe2I7, where n = 2, 3, or 4. This material possesses excellent physicochemical properties, such as semiconductor characteristics, ferroelectricity, and piezoelectricity. The preparation method of this invention allows for the preparation of this material using a simple solution method at low cost. This material has potential applications in ferroelectric, optoelectronic, and other fields.

The present invention is a film forming method that sprays mist on a heated substrate from a nozzle to form a crystalline oxide film by a mist CVD method, wherein the nozzle for use in the method includes at least two or more opposing gas inlets, a gas mixing unit having the gas inlets, and a gas outlet from which the mist is sprayed, and a linear velocity L (cm / sec) of the mist at any one of the two or more opposing gas inlets satisfies L≥0.8V-200, wherein V (cm3) represents a volume of the gas mixing unit. This can provide a film forming method for forming a crystalline oxide film, that has excellent crystallinity and a favorable in-plane film thickness distribution even with a large area and a thin film thickness, and has excellent semiconductor properties when applied to a semiconductor device; and a film forming apparatus for performing the film forming method.

The invention relates to the technical field of semiconductor materials, in particular to a tellurium-doped selenide semiconductor material and a preparation method thereof. The chemical formula of the tellurium-doped selenide semiconductor material is FeIn2Se4-xTex, x is more than 0 and less than or equal to 1.5, and the crystal structure is a rhombohedral phase (R-3m). Compared with FeIn2Se4, the tellurium-doped selenide semiconductor material provided by the invention has the advantages that the band gap is changed, the conductivity in the temperature range of 600-750 K is obviously reduced, different semiconductor properties can be provided, and the variety of FeIn2Se4-based materials is enriched.

The application provides a nanometer memory for ultra-high density data storage and a preparation method thereof, wherein a receptor group is reasonably introduced into an amphiphilic block copolymer, micelles are self-assembled to form storage units, and the preparation of the nanometer memory is realized by arraying the micelles through the induction of a nanometer array substrate. The application has the advantages that the micelles self-assembled by the amphiphilic block copolymer are uniform in size, the obtained micelles can be regularly arrayed under the induction of the substrate, and the micelles in the substrate have good semiconductor characteristics and can be applied to the development of memory devices as nanometer storage units. Compared with traditional storage devices, the innovative method greatly reduces the size of the storage units and opens up a new way for the further development of ultra-high density data storage.

The present invention belongs to the technical field of two-dimensional materials, specifically a kind of amorphous silicon dioxide two-dimensional material and its preparation method. The present invention uses pre-polymerized tetraethyl silicate, ethyl acetate and alkali source as raw materials, and prepares amorphous silicon dioxide two-dimensional material precursor by self-assembly reaction; utilizes easy high temperature, chemical etching and electrochemical corrosion sacrificial template method, and obtains amorphous silicon dioxide two-dimensional material by removing template; Compared with existing methods, this method has low cost, simple process, strong universality, and output improvement of 100-10000 times; product morphology is adjustable between 1μm-40μm, and thickness is adjustable between 1nm-10nm; the amorphous silicon dioxide two-dimensional material has excellent high temperature resistance (can withstand more than 1,000 degrees Celsius for a long time), good semiconductor properties and biocompatibility and other characteristics, and has broad application prospects in the fields of semiconductors and integrated circuits, biomedicine, aerospace and scientific research.

Provided are a semiconductor electricity storage material, an electricity storage body, and a laminated electricity storage body, each of which is composed of a biological material and has both semiconductor characteristics and electricity storage characteristics. The present invention relates to a fiber sheet having a fiber mainly composed of chitin or chitosan, formed in a sheet shape, and having a density of 2 g / cm3 or less. The fibers are preferably crystalline fibers / amorphous fibers, and are preferably composed of bundles or granular aggregates of chitin nanofibers or chitosan nanofibers having a width of 3-400 nm. In addition, the semiconductor is preferably an n-type bulk material semiconductor, and preferably has an N-type negative resistance.

The invention discloses a terpyridyl zinc complex as well as a preparation method and application thereof, and belongs to the technical field of materials. The terpyridyl zinc complex has the following molecular structure: # imgabs0 #, wherein X is a balancing anion; r1 and R2 are independently selected from a nitrogen heterocyclic unit, a benzene ring unit or a triphenylamine unit. The compound has semiconductor properties, can generate hydrogen peroxide with water and oxygen under sunlight illumination, and can be used as a photosensitizer or a photocatalyst.

The invention relates to a rail vehicle and a method for manufacturing a rail vehicle, the rail vehicle comprising at least one high-voltage electrical component and at least one insulating element (7, 9), wherein the at least one high-voltage electrical component is arranged in a shell, and the at least one insulating element (7, 9) is arranged between the high-voltage electrical component and the bottom surface of the shell, or wherein the at least one high-voltage electrical component is arranged on a vehicle roof, and the at least one insulating element (7, 9) is arranged between the high-voltage electrical component and the top surface (4) of the vehicle roof, wherein the insulating element (7, 9) is a solid insulating element having semiconductor properties.