3results about How to "Excellent semiconductor properties" patented technology

This application discloses a two-dimensional germanium-based perovskite ferroelectric semiconductor material, its preparation method, and its applications, belonging to the field of materials science. The molecular formula of the two-dimensional germanium-based perovskite ferroelectric semiconductor material is [CH3(CH2)]. n The molecule is NH3]2CsGe2I7, where n = 2, 3, or 4. This material possesses excellent physicochemical properties, such as semiconductor characteristics, ferroelectricity, and piezoelectricity. The preparation method of this invention allows for the preparation of this material using a simple solution method at low cost. This material has potential applications in ferroelectric, optoelectronic, and other fields.

A semiconductor device includes a semiconductor film including a Schottky junction region and an ohmic junction region; a Schottky electrode disposed on the Schottky junction region of the semiconductor film; and an ohmic electrode disposed on the ohmic junction region, the semiconductor device characterized in that a dislocation density of the Schottky junction region of the semiconductor film is smaller than a dislocation density of the ohmic junction region of the semiconductor film.

The application provides a preparation method of a composite dielectric elastomer film and a dielectric elastomer film actuator. The preparation method comprises the following steps: step 1: mixing BTRU@CDs giant electro-rheological particles with an electro-rheological liquid dispersion phase to obtain a suspension; step 2: uniformly mixing silicone rubber with the suspension to obtain a composite dielectric elastomer prepolymer, wherein the mass ratio of the silicone rubber to the suspension is 15:1 to 1:1, and the mass ratio of the BTRU@CDs giant electro-rheological particles in the composite dielectric elastomer prepolymer is 5-40%; and step 3: film forming is performed on the composite dielectric elastomer prepolymer to obtain a composite dielectric elastomer film. The composite dielectric elastomer film prepared by the preparation method of the composite dielectric elastomer film has better actuating performance, better mechanical performance and better cycle stability than traditional rubber elastomers. The problems of high driving voltage, large pre-stretching ratio, limited actuating strain, poor fatigue resistance and easy breakdown of existing dielectric elastomer materials are solved.