6results about How to "Excellent semiconductor properties" patented technology

The invention relates to the technical field of wastewater treatment, in particular to a hydrolytic acidification wastewater treatment process for strengthening extracellular electron transfer, which comprises the following steps: S1, constructing a hydrolytic acidification reactor, taking carbon fiber suspension filler as an anode, taking a steel wire mesh frame as a cathode, connecting the carbon fiber suspension filler in series by a stainless steel wire rope, and taking the stainless steel wire rope as a cathode; the carbon fiber suspension filler is connected with the steel wire mesh frame through an electrochemical workstation; s2, inoculating hydrolytic acidification bacteria into a reactor, controlling culture conditions, and domesticating microorganisms in a micro-current environment until a biological membrane is formed on the carbon fiber suspension filler; s3, inputting wastewater to be treated into the reactor, controlling treatment conditions, monitoring an effluent result, and discharging after the effluent result reaches the standard. Compared with traditional interspecific electron transfer, the wastewater treatment method has higher efficiency and speed, the oxygenolysis process of organic matter is accelerated, and the overall efficiency of wastewater treatment is improved.

This application discloses a two-dimensional germanium-based perovskite ferroelectric semiconductor material, its preparation method, and its applications, belonging to the field of materials science. The molecular formula of the two-dimensional germanium-based perovskite ferroelectric semiconductor material is [CH3(CH2)]. n The molecule is NH3]2CsGe2I7, where n = 2, 3, or 4. This material possesses excellent physicochemical properties, such as semiconductor characteristics, ferroelectricity, and piezoelectricity. The preparation method of this invention allows for the preparation of this material using a simple solution method at low cost. This material has potential applications in ferroelectric, optoelectronic, and other fields.

The invention relates to a thin film temperature sensor, a preparation method thereof and a temperature field measurement method, and belongs to the technical field of temperature sensors. The thin film temperature sensor comprises SiBCN ceramic and a filler. The thin film temperature sensor provided by the invention is high in density, good in surface quality, strong in bonding capacity with a substrate and not easy to fall off, has obvious semiconductor characteristics in the range of 0-800 DEG C, and can meet the temperature field measurement requirements of the surfaces of workpieces which are made of different materials and are of plane, curved surface and special-shaped structures under high-temperature working conditions.

A semiconductor device includes a semiconductor film including a Schottky junction region and an ohmic junction region; a Schottky electrode disposed on the Schottky junction region of the semiconductor film; and an ohmic electrode disposed on the ohmic junction region, the semiconductor device characterized in that a dislocation density of the Schottky junction region of the semiconductor film is smaller than a dislocation density of the ohmic junction region of the semiconductor film.

The application provides a preparation method of a composite dielectric elastomer film and a dielectric elastomer film actuator. The preparation method comprises the following steps: step 1: mixing BTRU@CDs giant electro-rheological particles with an electro-rheological liquid dispersion phase to obtain a suspension; step 2: uniformly mixing silicone rubber with the suspension to obtain a composite dielectric elastomer prepolymer, wherein the mass ratio of the silicone rubber to the suspension is 15:1 to 1:1, and the mass ratio of the BTRU@CDs giant electro-rheological particles in the composite dielectric elastomer prepolymer is 5-40%; and step 3: film forming is performed on the composite dielectric elastomer prepolymer to obtain a composite dielectric elastomer film. The composite dielectric elastomer film prepared by the preparation method of the composite dielectric elastomer film has better actuating performance, better mechanical performance and better cycle stability than traditional rubber elastomers. The problems of high driving voltage, large pre-stretching ratio, limited actuating strain, poor fatigue resistance and easy breakdown of existing dielectric elastomer materials are solved.

The present invention relates to a laminated structure comprising, a ground substrate with a crystalline oxide film containing gallium oxide as a main component and a root-mean-square of a roughness on a surface of the crystalline oxide film is 0.2 um or less. A diameter of the ground substrate is 50 mm or more and TTV of the ground substrate is 30 um or less. This provides a laminated structure having a crystalline oxide film with a smooth surface and a method for manufacturing the laminated structure.