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62results about How to "Excellent semiconductor properties" patented technology
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Amorphous oxide and field effect transistor
ActiveUS8212248B2Improve featuresIncrease profitSemiconductor devicesField-effect transistorAtomic composition
Owner:CANON KK
Amorphous oxide and field effect transistor
ActiveUS20100276685A1Improve featuresIncrease profitSemiconductor devicesField-effect transistorAtomic composition
An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.
Owner:CANON KK
Preparation method for ZnO-In2O3 nano semiconductor crystal gas sensitive material
InactiveCN103901081ASensitiveObvious \"strut\"Material nanotechnologyMaterial resistanceHeterojunctionFiber
The invention provides a preparation method for a ZnO-In2O3 nano semiconductor crystal gas sensitive material and belongs to inorganic nano semiconductor composite materials. The preparation method comprises the following steps: firstly, zinc nitrate hexahydrate (Zn(NO3)2*6H2O), 4.5 indium nitrate (In(NO3)3*9 / 2H2O) and polyvinylpyrrolidone (PVP) are used as raw materials, wherein zinc nitrate and indium nitrate are respectively used as a zinc source and an indium source; the viscosity of a solution is increased by the PVP and ethanol and N,N-dimethyl formaldehyde (DMF) are used as solvents; ZnO-In2O3 nano composite fibers are prepared by an electrostatic spinning method and a subsequent heat treatment process; secondly, the ZnO-In2O3 nano composite fibers are used as seed crystals and are subjected to heat treatment under the environment of a zinc ammonia solution; zinc oxide crystals grow on the surfaces of the ZnO-In2O3 nano composite fibers to obtain pine-branch-shaped ZnO-In2O3 nano composite materials; finally, the pine-branch-shaped ZnO-In2O3 nano composite materials are used as basic materials to assemble a gas sensitive element. The preparation method has the advantages of low energy consumption and no pollution; equipment for preparation is simple, the conditions of a reaction process are moderate and the stability is good. The ZnO-In2O3 nano semiconductor crystal gas sensitive material has a similar PN-type semiconductor heterojunction structure and has high sensitivity and short recovering time.
Owner:CHINA UNIV OF MINING & TECH
Thin film transistor and method for manufacturing thin film transistor
InactiveCN102460712AImprove mobilityImprove productivityTransistorVacuum evaporation coatingIndiumTitanium
Owner:BRIDGESTONE CORP
Organic semiconductor material and organic transistor using the same
InactiveUS20080230776A1Superior in controllability of threshold voltageHigh on-off ratioOrganic chemistryConductive materialArylHydrogen
The invention relates to an organic semiconductor material with a high carrier mobility, which is capable of obtaining favorable semiconductor characteristics when used in an organic semiconductor device, and an organic transistor using the same. More specifically, the present invention has a following structure including an oligothiophene part and a connecting part G;where, R1 and R2 are a hydrogen, a alkyl group, an alkoxy group, an aryl group, or an alkenyl group, R1 and R2 may be identical or different from each other, and where n is an integer. In the organic semiconductor material, the structure of the connecting part G may be any of the following:where, R3 and R4 are a hydrogen, an alkyl group, an alkoxy group, an aryl group, or a alkenyl group, R3 and R4 may be identical or different from each other, and where n is an integer of 1 to 3.
Owner:SANYO ELECTRIC CO LTD
Manufacturing method of nitride semiconductor device and nitride semiconductor device
InactiveUS20050221590A1Excellent semiconductor characteristicDesirable product yieldLaser detailsSemiconductor/solid-state device manufacturingDislocationMaterials science
Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
Owner:EPISTAR CORP
Preparation method of hybridized hierarchical structure sensitive thin-film sensing device based on two-dimensional material
InactiveCN104597082AImprove uniformityGood repeatabilityMaterial analysis by electric/magnetic meansThin film sensorElectricity
The invention discloses a preparation method of a hybridized hierarchical structure sensitive thin-film sensing device based on a two-dimensional material. The sensing device comprises a single crystal semiconductor substrate, an insulation layer, an interdigital electrode layer, a first PDDA film layer, a reduction-oxidation graphene film layer, a second PDDA film layer and a hierarchical structure ZnO-PSS thin film which are sequentially overlapped according to a preparation order. The preparation method mainly comprises the following steps: preparing an interdigital electrode device; preparing a film layer material required by the sensing device, and preparing the hybridized hierarchical structure sensitive sensing device by adopting a layer-by-layer self-assembling method. The preparation method has the advantages of fully utilizing characteristics of large specific area, low electronic noise, good semiconductor property and negative electricity of reduced-oxidized graphene and combining the structure characteristic of a hierarchical structure zinc oxide to prepare a hybridized hierarchical structure sensitive thin film; the process is simple, the repeatability is good, and the prepared sensing device can be used in the field of gas detection.
Owner:TSINGHUA UNIV
Thin film transistor and semiconductor device and method for forming the same
InactiveUS6479334B1Improve mobilityImprove film qualityTransistorSolid-state devicesSilicon thin filmCrystallinity
A thin film transistor and a semiconductor device and a method for forming the same. A silicon thin film formed on an insulating substrate is heated at 550 to 800° C. so that it has crystallinity, and a thin film transistor is formed using the crystalline silicon film thus obtained. Thermal contraction of the insulating substrate is set in a range of 30 to 500 ppm in the heating process, so that the thin film transistor has high mobility, low threshold voltage and high off-resistance. Thermal contraction of the insulating substrate may be also set 100 ppm or less in a heating process after a patterning treatment in a thin film transistor producing process.
Owner:SEMICON ENERGY LAB CO LTD
Method for improving gallium oxide semiconductor device ohmic contact
ActiveCN107993934ALower the barrierReduce the impact of exposureSemiconductor devicesOhmic contactMicrometer
The invention provides a method for improving gallium oxide semiconductor device ohmic contact. The method comprises the steps of conducting plasma etching surface treatment on a gallium oxide semiconductor and adjusting the roughness and oxygen vacancy on the surface of the gallium oxide semiconductor by controlling an etching technology, so that the surface roughness is within 1 micrometer, andthe oxygen vacancy is improved; growing a metal layer with a corresponding power function on the gallium oxide semiconductor after being subjected to the plasma etching surface treatment to form a semiconductor device with the ohmic contact. By means of the method, application and popularization of a gallium oxide material are facilitated; besides, according to a plasma etching method, the ohmic contact is improved to be not limited to the gallium oxide material, and the method can also be expanded and applied to other semiconductor devices.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI
ZnTi hydrotalcite nanosheet catalyst and application of catalyst in hydrogen preparation by photoactivating and decomposing water
InactiveCN102872918AAchieving controllable equipmentExcellent semiconductor propertiesOrganic-compounds/hydrides/coordination-complexes catalystsHydrogen productionSolventChemistry
Owner:BEIJING UNIV OF CHEM TECH
Phthalocyanine nanowires, ink composition and electronic element each containing same, and method for producing phthalocyanine nanowires
ActiveUS20120104335A1Excellent semiconductor propertiesNanoinformaticsReactive dyesNanowireOrganic solvent
The present invention provides phthalocyanine nanowires having a minor diameter of 100 nm or less and a ratio (length / minor diameter) of length to minor diameter of 10 or more, an ink composition characterized by containing, as essential components, the phthalocyanine nanowires and an organic solvent, a film including the phthalocyanine nanowires, and an electronic element including a film. Since by using an ink composition containing the phthalocyanine nanowires of the present invention a phthalocyanine film can be formed by a wet process such as coating or printing, a break-proof, lightweight, low-cost electronic element can be provided on a flexible plastic substrate.
Owner:DAINIPPON INK & CHEM INC
Display panel and display device
ActiveCN108376691AMeet the requirements shownExcellent semiconductor propertiesSolid-state devicesSemiconductor/solid-state device manufacturingSemiconductor materialsDisplay device
The invention discloses a display panel and a display device. The display panel comprises a substrate including a plurality of pixel areas; an active switch formed on the substrate; a transparent conducting layer electrically connected with the active switch; an organic light-emitting diode formed on the transparent conducting layer; and a common electrode layer covering the organic light-emittingdiode; wherein the active switch comprises a semiconductor layer which is made of a semiconductor material containing germanium, and the electron mobility of the semiconductor layer is greater than 3cm2 / vs. According to the invention, the mobility of the active switch can be improved.
Owner:HKC CORP LTD +1
Method for preparing lithium ion battery cathode material Nb2O5 and Li2O doped tellurium and vanadium glass
InactiveCN109616659ANo pollution in the processShort experiment cycleNegative electrodesSecondary cellsLithium oxideThermal insulation
The invention discloses a method for preparing lithium ion battery cathode material Nb2O5 and Li2O doped tellurium and vanadium glass. The method comprises the following steps that: firstly, mixing niobium pentoxide, lithium oxide, vanadium pentoxide and tellurium oxide, and carrying out full grinding; then, transferring to an aluminum oxide crucible, and carrying out fusion thermal insulation ina muffle furnace; and finally, carrying out annealing on the fused glass in an annealing furnace to eliminate internal stress. The obtained sample is grinded into powder, and the powder is subjected to thermodynamics researching. Then, one part of samples is subjected to high energy ball milling with acetylene black and binder for preparing a lithium ion battery cathode, and the electrochemical performance of the sample is researched and represented. By use of the method, the problems of the low cycling stability and safety of a traditional lithium ion battery can be effectively solved.
Owner:QILU UNIV OF TECH
Display panel and display device
InactiveCN107359203AMeet the requirements shownExcellent semiconductor propertiesTransistorSolid-state devicesAmorphous siliconDisplay device
The invention discloses a display panel and a display device. The display panel includes a substrate; a first metal layer disposed on the substrate; an insulating layer disposed on the first metal layer; a semiconductor layer disposed on the insulating layer and including a semiconductor compound doped with germanium metal; and a second metal layer disposed on the semiconductor layer, wherein the mobility of the semiconductor compound is greater than that of amorphous silicon. The display panel can improve the mobility of a TFT.
Owner:HKC CORP LTD +1
Thin film transistor and fabrication method thereof, array substrate, and display device
ActiveUS20140167036A1Simple technical meanEasy to implementTransistorSolid-state devicesTransistor arrayDisplay device
The present invention discloses a thin film transistor (TFT), an array substrate, and fabrication methods thereof, and a display device. The TFT includes a gate, an oxide active layer, a source, and a drain formed on a substrate, wherein a source and drain transition layer is provided between the oxide active layer and the source, the drain. One patterning process is reduced and one mask process is saved through forming the source and drain transition layer between the oxide active layer and the source, the drain, thus effectively simplifying the fabrication procedure. At the same time, the additionally provided source and drain transition layer may prevent the oxide active layer from being corroded during etching, also effectively reduce threshold voltage (Vth) drift of the TFT, improve Ion (on-state current) / Ioff (off-state current), and enhance thermal stability.
Owner:BOE TECH GRP CO LTD
Semiconductor device
PendingCN109427915AExcellent semiconductor propertiesImprove featuresSemiconductor/solid-state device manufacturingDiodePhysicsOxide semiconductor
The invention provides a semiconductor device excellent in bonding property between a p-type semiconductor layer, an n-type semiconductor layer and an i-type semiconductor layer, and thus having enhanced semiconductor properties. The invention manufactures a semiconductor device at least including an n-type semiconductor layer including a first semiconductor as a major component, an i-type semiconductor layer including a second semiconductor as a major component and a p-type semiconductor layer including a third semiconductor as a major component. The first, second and third semiconductors areall oxide semiconductors having a corundum structure, and the obtained semiconductor device is used for power devices and the like.
Owner:FLOSFIA
Semiconductor device
PendingCN109427867AExcellent semiconductor propertiesImprove featuresSemiconductor/solid-state device manufacturingSemiconductor devicesPhysicsOxide semiconductor
The invention provides a semiconductor device, which has excellent bonding among a p-type semiconductor layer, an n-type semiconductor layer and an i-type semiconductor layer, and has excellent semiconductor properties. According to the technical scheme, the semiconductor device is manufactured, and the obtained semiconductor device is used for a power device. The semiconductor device at least comprises the n-type semiconductor layer, the i-type semiconductor layer and the p-type semiconductor layer, wherein the n-type semiconductor layer comprises a first semiconductor as the main composition; the first semiconductor is an oxide semiconductor containing a metal selected from one or more than two of aluminum, indium, and gallium.
Owner:FLOSFIA
A batch preparation method of a suspended nanowire manipulator
ActiveCN109850843AExcellent semiconductor propertiesFree from interference from environmental factorsDecorative surface effectsChemical vapor deposition coatingEtchingSilicon nanowires
The invention discloses a batch preparation method of a suspended nanowire manipulator. The method comprises the following steps: preparing a nanowire array growing on the edge of a slope step definedby photoetching based on an IPSLS growth mode, then, spin-coating a layer of oxygen resin colloid on the substrate on which the silicon nanowires grow; carrying out photoetching pattern operation, removing an amorphous silicon dielectric layer on the surface of the substrate by wet etching, suspending an epoxy resin colloid thin film adhered to a nanowire array on the surface of a solution, fullyreplacing the epoxy resin colloid thin film with ethanol, and carrying out a drying technology to prepare the self-assembled suspended nanowire manipulator array. According to the invention, the nanowire array is transferred to the photoetched self-supporting substrate by using a transfer technology and a critical point drying technology; the influence of solution surface tension is eliminated, the original appearance of the nanowire manipulator is kept, finally, the operable suspended nanowire manipulator array is obtained, and the method can be widely applied to various fields of nano robots, biomedical cell detection, biosensors and the like.
Owner:NANJING UNIV
Preparation method of zno-in2o3 nano semiconductor crystal gas sensitive material
InactiveCN103901081BSensitiveImprove stabilityMaterial nanotechnologyMaterial resistanceHeterojunctionFiber
The invention provides a preparation method for a ZnO-In2O3 nano semiconductor crystal gas sensitive material and belongs to inorganic nano semiconductor composite materials. The preparation method comprises the following steps: firstly, zinc nitrate hexahydrate (Zn(NO3)2*6H2O), 4.5 indium nitrate (In(NO3)3*9 / 2H2O) and polyvinylpyrrolidone (PVP) are used as raw materials, wherein zinc nitrate and indium nitrate are respectively used as a zinc source and an indium source; the viscosity of a solution is increased by the PVP and ethanol and N,N-dimethyl formaldehyde (DMF) are used as solvents; ZnO-In2O3 nano composite fibers are prepared by an electrostatic spinning method and a subsequent heat treatment process; secondly, the ZnO-In2O3 nano composite fibers are used as seed crystals and are subjected to heat treatment under the environment of a zinc ammonia solution; zinc oxide crystals grow on the surfaces of the ZnO-In2O3 nano composite fibers to obtain pine-branch-shaped ZnO-In2O3 nano composite materials; finally, the pine-branch-shaped ZnO-In2O3 nano composite materials are used as basic materials to assemble a gas sensitive element. The preparation method has the advantages of low energy consumption and no pollution; equipment for preparation is simple, the conditions of a reaction process are moderate and the stability is good. The ZnO-In2O3 nano semiconductor crystal gas sensitive material has a similar PN-type semiconductor heterojunction structure and has high sensitivity and short recovering time.
Owner:CHINA UNIV OF MINING & TECH
ZnO superfine nano-particles, ZnO slurry, preparation method and application
InactiveCN109903883APromote recrystallizationSimple manufacturing methodMaterial nanotechnologyLight-sensitive devicesNanoparticleSlurry
The invention discloses a ZnO superfine nano particle, a ZnO slurry, a preparation method and application thereof. Hydroxide powder and zinc salt solid are mixed and ground, water is added, the mixture is aged, the aged precipitate is washed under the condition of vibration and is centrifuged, and the precipitate is the ZnO superfine nano particle. The ZnO superfine nano particles and the deionized water are uniformly mixed and dispersed to obtain the ZnO slurry. The preparation method of the ZnO superfine nano-particles is simple, environment-friendly, efficient and low in cost, and can effectively promote the recrystallization of the ZnO through a simple low-temperature aging process (not more than 90 DEG C), which is beneficial to eliminate surface impurity defects, and plays a significant role in improving the semiconductor characteristics of materials.
Owner:DONGGUAN UNIV OF TECH +1
Organic semiconductor film and method for manufacturing the same, and stamp for contact printing
InactiveCN102870202AImprove mobilityExcellent semiconductor propertiesTransistorSolid-state devicesX-rayOrganic semiconductor
Disclosed is an organic semiconductor film (10) which has a value of 1 or more but less than 10 for the ratio of the charge mobility [(charge mobility of the surface side having larger charge mobility) / (charge mobility of the surface side having smaller charge mobility)] of two opposing surface sides (11, 12). In addition, the organic semiconductor film (10) has a relative X-ray reflectance peak height of 2.0 or more with respect to the peak height of an organic semiconductor film which has the same thickness and materials and is manufactured by performing spin coating on a silicon wafer. Alternatively, the organic semiconductor film (10) has a value of 2 or more for the ratio of the charge mobility [(charge mobility of the surface side having larger charge mobility) / (charge mobility of the surface side having smaller charge mobility)] of the two opposing surface sides (11, 12).
Owner:TEIJIN LTD
Thin film transistor and fabrication method thereof, array substrate, and display device
ActiveUS9716108B2Excellent semiconductor propertiesEasy to operateTransistorSolid-state devicesDisplay deviceThermal stability
Owner:BOE TECH GRP CO LTD
A Controllable Patterned Ultrafast Laser Composite Fabrication Method of Metal Oxide Nanowires
ActiveCN104649233BRegulation diameterControl lengthOxide/hydroxide preparationTungsten oxides/hydroxidesMicro nanoLaser processing
The invention discloses a controllable patterning ultrafast laser composite preparation method for metal oxide nano wires. The method comprises the following steps: (1), according to a preset pattern, irradiating the surface of a block metal by utilizing ultrafast laser to obtain a patterning micro-nano structure, namely a metal oxide nanowire precursor, on the block metal; and (2), under the oxidizing atmosphere, heating the block metal attached with the metal oxide nanowire precursor, and keeping the temperature, and cooling down, so that the metal oxide nanowires in-situ grow on the metal oxide nanowire precursor. According to the controllable patterning ultrafast laser composite preparation method for the metal oxide nano wires, by utilizing control of the ultrafast laser processing procedure on the structure distribution form of the metal surface micro-nano precursor, the control on the metal oxide nanowire distribution form can be realized; meanwhile, by virtue of the control on factors, such as the heating temperature, the heat preservation time and the oxidization atmosphere, in a thermal oxidization process, the control on the diameters, the lengths and the growth density of the metal oxide nanowires can be realized.
Owner:TSINGHUA UNIV
Zinc oxide nanorod preparation method
InactiveCN107792874AExcellent semiconductor propertiesGood repeatabilityZinc oxides/hydroxidesNanotechnologyWater bathsZinc Acetate Dihydrate
The invention discloses a zinc oxide nanorod preparation method and belongs to the field of piezoelectric power generation textiles. The zinc oxide nanorod preparation is characterized by comprising the following steps: dropwise adding ammonium hydroxide into a zinc acetate dihydrate and hexamethylene tetramine water solution to obtain zinc oxide seed crystal liquor; putting the seed crystal liquor into a water bath pot; clamping a textile lining by tweezers, perpendicularly putting into the seed crystal liquor, standing, then pulling the lining out of the liquid level from the solution at a constant speed and finally putting the textile lining with the surface soaked by the seed crystal liquor into an oven to form a seed crystal layer; opening a constant-temperature water bath pot, perpendicularly putting the textile on which the seed crystal layer grows into reaction fluid and wholly soaking a flask into the constant-temperature water bath pot; washing by deionized water after growthfinishes and drying to prepare the zinc oxide nanorods. The zinc oxide nanorods grow and are prepared on the silver-coated textile lining, the nanorods are perpendicularly and tightly arranged on thesurface of the textile, the zinc oxide nanorods have the advantages of obviously semiconductor characteristics and good repetition, and obvious current intensified signals appearing in a zinc oxide growth area shows that the zinc oxide nanorods have excellent piezoelectric property.
Owner:SHAANXI ALLIANCE LOGISTICS
Manufacturing method of nitride semiconductor device and nitride semiconductor device
InactiveUS7405096B2Improve production yieldExcellent semiconductor propertiesLaser detailsSemiconductor/solid-state device manufacturingDislocationCrystal growth
Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
Owner:EPISTAR CORP
Alpha-position tetrapropyl-substituted metal phthalocyanine, preparation method thereof, perovskite solar cell and preparation method of solar cell
ActiveCN109867682AImprove stabilityLow priceOrganic chemistryFinal product manufacturePerovskite solar cellElectrical battery
The invention provides an alpha-position tetrapropyl-substituted metal phthalocyanine, a preparation method thereof, a perovskite solar cell and a preparation method of the solar cel, and belongs to the technical field of solar cells. The metal phthalocyanine provided by the invention is low in price, has excellent semiconductor characteristics, has good solubility in an organic solvent, can be used to prepare a hole transport layer of a non-doped perovskite solar cell by a low-cost liquid phase spin coating process, and can effectively improve the stability of a component of the perovskite solar cell. The hole transport layer of the perovskite solar cell provided by the invention is beneficial to extraction and transport of photogenerated holes of a perovskite active layer, helps to reduce the recombination probability of electrons and holes, and is more advantageous for improving the component performance. The phthalocyanine molecule provided by the invention has a peripheral propylsubstituent, and the propyl substituent helps to improve the hydrophobic property of the material, can effectively resist the invasion of water molecules, can effectively protect the active layer of the perovskite, and contribute to the improvement of the component lifetime and stability.
Owner:SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
Preparation method for novel copper-bearing ionized perovskite thin film
InactiveCN106206956AImprove photoelectric conversion efficiencyReduce power generation costsSolid-state devicesSemiconductor/solid-state device manufacturingSpinsRoom temperature
The invention discloses a preparation method for a novel copper-bearing ionized perovskite thin film. The preparation method comprises the steps that firstly, CH3NH3X (MAX) is dissolved in a DMF solvent, and stirring is carried out until CH3NH3X is dissolved completely; secondly, an HCl solution is added; thirdly, CuI is added, and stirring is carried out; fourthly, PbI2 is added, stirring is carried out under a shading condition, and a copper-bearing ionized perovskite precursor solution is obtained; fifthly, a substrate material is washed; sixthly, the washed substrate material is put in an ultraviolet ozone washing instrument to be washed; seventhly, the copper-bearing ionized perovskite precursor solution is dropped onto the substrate material, and then spe in coating is carried out; eighthly, the spin coated material is heated and then is cooled to the room temperature, and the copper-bearing ionized perovskite thin film is obtained. The prepared copper-bearing ionized perovskite thin film is good in stability, low in cost, free of toxicity and high in photoelectric conversion efficiency. The copper-bearing ionized perovskite thin film can serve as an efficient photovoltaic energy material, photovoltaic power generation cost is greatly reduced, and therefore the copper-bearing ionized perovskite thin film is suitable for being applied and popularized on a large scale.
Owner:MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
Phthalocyanine nanowires, ink composition and electronic element each containing same, and method for producing phthalocyanine nanowires
ActiveUS8470204B2Excellent semiconductor propertiesIndividual molecule manipulationNanoinformaticsNanowireOrganic solvent
The present invention provides phthalocyanine nanowires having a minor diameter of 100 nm or less and a ratio (length / minor diameter) of length to minor diameter of 10 or more, an ink composition characterized by containing, as essential components, the phthalocyanine nanowires and an organic solvent, a film including the phthalocyanine nanowires, and an electronic element including a film. Since by using an ink composition containing the phthalocyanine nanowires of the present invention a phthalocyanine film can be formed by a wet process such as coating or printing, a break-proof, lightweight, low-cost electronic element can be provided on a flexible plastic substrate.
Owner:DAINIPPON INK & CHEM INC
MSM type deep ultraviolet photoelectric detector based on cubic boron nitride thick film and preparation method
ActiveCN111710752ACubic phase content increasesAlleviate internal stress accumulationFinal product manufactureSemiconductor devicesPhotovoltaic detectorsHigh energy
The invention discloses an MSM type deep ultraviolet photoelectric detector based on a cubic boron nitride thick film and a preparation method. The MSM type deep ultraviolet photoelectric detector comprises a substrate, a boron nitride buffer layer which is positioned on the substrate, a cubic boron nitride thick film which is positioned on the boron nitride buffer layer, and a pair of electrodeswhich are respectively stacked on the cubic boron nitride thick film. The electronic characteristics of the cubic boron nitride ultra-wide forbidden band, the stability in an extreme environment and other remarkable material performance advantages are utilized, the cubic boron nitride ultra-wide forbidden band is used as a light absorption layer, the photoelectric response of the device in a deepultraviolet region can be directly obtained, the dark current is low, the sensitivity is high, and the response speed is high; the MSM type deep ultraviolet photoelectric detector can be applied to extreme environments with high temperature, high pressure, high energy radiation and corrosivity, and has very high practical value in the fields of aerospace and information communication; the detectorcan be directly manufactured on a silicon-based substrate and can be compatible with an existing silicon-based process, device integration is facilitated, the process is simple, and large-scale industrialization is facilitated.
Owner:JILIN UNIV
Method for synthesizing microporous conductive polymeric material by using nano reactor
InactiveCN106867018AReversible Redox Cyclic Voltammetric PropertiesExcellent semiconductor propertiesElectrolysis componentsElectrolytic organic productionRedox cyclingOxidation reduction
The invention relates to a method for synthesizing a microporous conductive polymeric material by using a nano reactor. The method for synthesizing the microporous conductive polymeric material by using the nano reactor comprises the following steps: firstly, synthesizing the organic and inorganic hybridized nano reactor; representing the microstructure of the nano reactor by means of a scanning electron microscope, and meanwhile, representing the structure by means of an X-ray diffractometer; and secondly, by taking the nano reactor as a template, synthesizing the microporous conductive polymeric material which has polythiophene of a three-dimensional structure with a regular porous structure by means of an electrochemical method inside, has a reversible oxidation reduction cycle volt-ampere property and has the conductivity of 0.1S / cm. The conductive polymeric material with the microporous structure is synthesized by using the nano reactor as the template by means of the method for the first time, so that novel polythiophene with the microporous structure is obtained.
Owner:NORTHEAST GASOLINEEUM UNIV
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