62results about How to "Excellent semiconductor properties" patented technology

An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.

(1) Disclosed is a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said thin film transistor being characterized in that the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and / or tin. (2) Disclosed is a bipolar thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said bipolar thin film transistor being characterized in that the channel layer is a laminate of an organic material film and a metal oxide film that contains indium doped with at least one of tungsten, tin or titanium and has an electrical resistivity that is controlled in advance. (3) Disclosed is a method for manufacturing a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said method for manufacturing a thin film transistor being characterized in that at least the channel layer or a part of the channel layer is formed by forming a metal oxide film by a sputtering process using an In-containing target without heating the substrate, and a heat treatment is carried out after forming the above-described elements on the substrate.

The invention provides a preparation method for a ZnO-In2O3 nano semiconductor crystal gas sensitive material and belongs to inorganic nano semiconductor composite materials. The preparation method comprises the following steps: firstly, zinc nitrate hexahydrate (Zn(NO3)2*6H2O), 4.5 indium nitrate (In(NO3)3*9 / 2H2O) and polyvinylpyrrolidone (PVP) are used as raw materials, wherein zinc nitrate and indium nitrate are respectively used as a zinc source and an indium source; the viscosity of a solution is increased by the PVP and ethanol and N,N-dimethyl formaldehyde (DMF) are used as solvents; ZnO-In2O3 nano composite fibers are prepared by an electrostatic spinning method and a subsequent heat treatment process; secondly, the ZnO-In2O3 nano composite fibers are used as seed crystals and are subjected to heat treatment under the environment of a zinc ammonia solution; zinc oxide crystals grow on the surfaces of the ZnO-In2O3 nano composite fibers to obtain pine-branch-shaped ZnO-In2O3 nano composite materials; finally, the pine-branch-shaped ZnO-In2O3 nano composite materials are used as basic materials to assemble a gas sensitive element. The preparation method has the advantages of low energy consumption and no pollution; equipment for preparation is simple, the conditions of a reaction process are moderate and the stability is good. The ZnO-In2O3 nano semiconductor crystal gas sensitive material has a similar PN-type semiconductor heterojunction structure and has high sensitivity and short recovering time.

The present invention discloses a thin film transistor (TFT), an array substrate, and fabrication methods thereof, and a display device. The TFT includes a gate, an oxide active layer, a source, and a drain formed on a substrate, wherein a source and drain transition layer is provided between the oxide active layer and the source, the drain. One patterning process is reduced and one mask process is saved through forming the source and drain transition layer between the oxide active layer and the source, the drain, thus effectively simplifying the fabrication procedure. At the same time, the additionally provided source and drain transition layer may prevent the oxide active layer from being corroded during etching, also effectively reduce threshold voltage (Vth) drift of the TFT, improve Ion (on-state current) / Ioff (off-state current), and enhance thermal stability.

The invention discloses a controllable patterning ultrafast laser composite preparation method for metal oxide nano wires. The method comprises the following steps: (1), according to a preset pattern, irradiating the surface of a block metal by utilizing ultrafast laser to obtain a patterning micro-nano structure, namely a metal oxide nanowire precursor, on the block metal; and (2), under the oxidizing atmosphere, heating the block metal attached with the metal oxide nanowire precursor, and keeping the temperature, and cooling down, so that the metal oxide nanowires in-situ grow on the metal oxide nanowire precursor. According to the controllable patterning ultrafast laser composite preparation method for the metal oxide nano wires, by utilizing control of the ultrafast laser processing procedure on the structure distribution form of the metal surface micro-nano precursor, the control on the metal oxide nanowire distribution form can be realized; meanwhile, by virtue of the control on factors, such as the heating temperature, the heat preservation time and the oxidization atmosphere, in a thermal oxidization process, the control on the diameters, the lengths and the growth density of the metal oxide nanowires can be realized.

Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.