Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of zno-in2o3 nano semiconductor crystal gas sensitive material

A nano-semiconductor, zno-in2o3 technology, applied in nanotechnology, nanotechnology, material resistance and other directions, can solve the problems of inability to significantly improve performance, poor gas sensitivity, long gas response time, etc., to achieve excellent sensitive performance, simple equipment, Good product stability

Inactive Publication Date: 2016-03-30
CHINA UNIV OF MINING & TECH
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional metal-oxide-semiconductor gas-sensing materials are often in the form of powders. This material has poor gas sensitivity and long gas response time. Although researchers do various metal doping, growth due to agglomeration between powders cannot be avoided. therefore cannot significantly improve their performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of zno-in2o3 nano semiconductor crystal gas sensitive material
  • Preparation method of zno-in2o3 nano semiconductor crystal gas sensitive material
  • Preparation method of zno-in2o3 nano semiconductor crystal gas sensitive material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Example 1: Pine branched high ethanol sensitive performance ZnO-In 2 o 3 Preparation of nanocomposites;

[0023] (1) Preparation of ZnO-In 2 o 3 composite nanofibers.

[0024] ZnO-In 2 o 3 The synthesis of composite nanofibers is improved according to the methods reported in the existing literature. The ethanol of 6.6g and the DMF of 2.2g are joined in the beaker of 25mL, stir can obtain mixed solvent, add the Zn(NO 3 ) 2 ·6H 2 O, 200mg of In(NO 3 ) 3 9 / 2H 2 O, and 800mg of Polyvinylpyrrolidone (PolyvinylpyrrolidonePVP), in which zinc nitrate and indium nitrate are used as zinc source and indium source respectively, and PVP can increase the viscosity of the solution on the one hand, and on the other hand, it is added as a skeleton support for spinning . Stir vigorously for 5 hours to obtain a uniform colorless and transparent precursor solution; use a 5mL medical syringe with a 22G spinning needle with an inner diameter of 0.41mm to hold the precursor solut...

Embodiment 2

[0027] Example 2: Pine branched high ethanol sensitive performance ZnO-In 2 o 3 Preparation of nanocomposites;

[0028] (1) Preparation of ZnO-In 2 o 3 composite nanofibers.

[0029] ZnO-In 2 o 3 The synthesis of composite nanofibers was modified from the reported method. The ethanol of 9.9g and the DMF of 3.3g are joined in the beaker of 25mL, stir can obtain mixed solvent, add the Zn of 300mg wherein (NO 3 ) 2 ·6H 2 O, In(NO 3 ) 3 9 / 2H 2 O, and 1200mg of Polyvinylpyrrolidone (PolyvinylpyrrolidonePVP), in which zinc nitrate and indium nitrate are used as zinc source and indium source respectively, and PVP can increase the viscosity of the solution on the one hand, and on the other hand, it is added as a skeleton support for spinning . Stir vigorously for 5 hours to obtain a uniform colorless and transparent precursor solution; use a 5mL medical syringe with a 22G spinning needle with an inner diameter of 0.41mm to hold the precursor solution for electrospinning, ...

Embodiment 3

[0032] Example 3: Pine branched high ethanol sensitive performance ZnO-In 2 o 3 Preparation of nanocomposites;

[0033] (1) Preparation of ZnO-In 2 o 3 composite nanofibers.

[0034] ZnO-In 2 o 3 The synthesis of composite nanofibers was modified from the reported method. The ethanol of 5.5g and the DMF of 1.83g are joined in the beaker of 25mL, stir can obtain mixed solvent, add the Zn(NO 3 ) 2 ·6H 2 O, In(NO 3 ) 3 9 / 2H 2 O, and 667mg of Polyvinylpyrrolidone (PolyvinylpyrrolidonePVP), in which zinc nitrate and indium nitrate are used as zinc source and indium source respectively, and PVP can increase the viscosity of the solution on the one hand, and on the other hand, it is added as a skeleton support for spinning . Stir vigorously for 5 hours to obtain a uniform colorless and transparent precursor solution; use a 5mL medical syringe with a 22G spinning needle with an inner diameter of 0.41mm to hold the precursor solution for electrospinning, where the DC volta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method for a ZnO-In2O3 nano semiconductor crystal gas sensitive material and belongs to inorganic nano semiconductor composite materials. The preparation method comprises the following steps: firstly, zinc nitrate hexahydrate (Zn(NO3)2*6H2O), 4.5 indium nitrate (In(NO3)3*9 / 2H2O) and polyvinylpyrrolidone (PVP) are used as raw materials, wherein zinc nitrate and indium nitrate are respectively used as a zinc source and an indium source; the viscosity of a solution is increased by the PVP and ethanol and N,N-dimethyl formaldehyde (DMF) are used as solvents; ZnO-In2O3 nano composite fibers are prepared by an electrostatic spinning method and a subsequent heat treatment process; secondly, the ZnO-In2O3 nano composite fibers are used as seed crystals and are subjected to heat treatment under the environment of a zinc ammonia solution; zinc oxide crystals grow on the surfaces of the ZnO-In2O3 nano composite fibers to obtain pine-branch-shaped ZnO-In2O3 nano composite materials; finally, the pine-branch-shaped ZnO-In2O3 nano composite materials are used as basic materials to assemble a gas sensitive element. The preparation method has the advantages of low energy consumption and no pollution; equipment for preparation is simple, the conditions of a reaction process are moderate and the stability is good. The ZnO-In2O3 nano semiconductor crystal gas sensitive material has a similar PN-type semiconductor heterojunction structure and has high sensitivity and short recovering time.

Description

technical field [0001] The invention relates to an inorganic nano-semiconductor composite material, in particular to a ZnO-In 2 o 3 A method for preparing a nano-semiconductor gas-sensitive material. Background technique [0002] With the rapid development of industrial level and economy, more and more flammable, explosive and poisonous gases begin to threaten human safety and health. Apply gas sensors to automobiles, chemicals, pharmaceuticals, and other industries that require strict environmental testing to ensure that various exhaust gases are purified to safe standards for re-emission, including nitrogen oxides, carbon oxides, ammonia, sulfur compounds, and Some small molecule hydrocarbons and their derivatives. Such as alcohols, aldehydes, ketones, carboxylic acids, esters and various organic amines. At the same time, it can be used in places where flammable and explosive gases are strictly prohibited, and can monitor common dangerous gases such as carbon monoxide,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12B82Y40/00B82Y30/00
Inventor 曹希传宣瑞飞孙毅成耿浩燃陈辉
Owner CHINA UNIV OF MINING & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products