273results about How to "Improve photoelectric properties" patented technology

The invention relates to a graphene / TiO2-based near-infrared / ultraviolet radiation resistant polymer composite film and a preparation method thereof, relating to a near-infrared / ultraviolet radiation resistant composite film and a preparation method thereof. The invention aims to solve the problems of the existing heat reflecting material such as poor heat insulation effect, low transparency, serious light pollution and high production cost and the like. The composite film is prepared by adding the mixed liquid of graphene oxide dispersion and nano-TiO2 dispersion in the curing system of epoxy acrylate at a volume ratio of 1-10:50. The preparation method comprises the following steps: 1) preparing graphene oxide; 2) preparing TiO2 nanoparticles; 3) preparing nanometer graphene / TiO2 composite; and 4) preparing the graphene / TiO2-based near-infrared / ultraviolet radiation resistant polymer composite film. The composite film is mainly used for the glass coating of a building or means of transport for running an air-conditioning system.

The invention discloses a display device, a flexible display panel and a manufacturing method thereof. The flexible display panel comprises a flexible substrate, a first barrier layer, display parts, a second barrier layer and a barrier effect indication layer, wherein the first barrier layer is arranged on the flexible substrate; the display parts are arranged on the first barrier layer; the second barrier layer is arranged on the first barrier layer, and covers the display parts; the barrier effect indication layer is arranged between the first barrier layer and the second barrier layer, and surrounds the display parts. The flexible display panel can indicate the packaging effect thereof, and ensures packaging effect thereof, thereby guaranteeing photoelectric characteristics of an organic light emitting diode device, and prolonging the service life of the organic light emitting diode device.

The invention relates to an ultraviolet detector, in particular to a visible-blind ultraviolet detector based on a Beta-Ga2O3 / SiC heterojunction thin film and a fabrication method of the visible-blind ultraviolet detector. According to the fabrication method, a layer of Beta-Ga2O3 thin film is deposited on an n-type 6H-SiC substrate by a laser molecular beam epitaxial technique, and then a layer of Ti / Au thin film is deposited on the n-type 6H-SiC substrate and the Beta-Ga2O3 thin film through a mask by a radio frequency magnetron sputtering to be used as an electrode. The fabricated visible-blind ultraviolet detector has the advantages of stable performance, response sensitivity, small dark current and high potential application; and moreover, the fabrication method has the characteristics of high process controllability, simplicity in operation, high universality, restorability of repeated test and the like, and has great application prospect.

A thin film transistor and a manufacturing method thereof are provided. The thin film transistor includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric layer. The gate is disposed on a substrate. The oxide channel layer, disposed on the substrate, is stacked with the gate. A material of the oxide channel layer includes a metal element. The metal element content shows a gradient distribution along a thickness direction of the oxide channel layer. The gate insulation layer is disposed between the gate and the oxide channel layer. The source and the drain are disposed in parallel to each other, and connected to the oxide channel layer. Sides of the source and the drain, facing away from the substrate, are covered by the dielectric layer.

The invention relates to a perovskite solar cell with stable performance in an air environment and a preparation method of the perovskite solar cell. The solar cell sequentially comprises a conductive base, an electron blocking layer, an electron transport layer, a perovskite sensitization layer, a hydrophobic interface layer, a hole transport layer and a metal layer from bottom to top. The preparation method comprises the following steps: depositing the electron blocking layer and the electron transport layer on the conductive base; depositing the perovskite sensitization layer; depositing the hydrophobic interface layer; depositing the hole transport layer; and depositing the metal layer. According to the perovskite solar cell provided by the invention, the stability of the perovskite cell in air is obviously improved.

The invention discloses a compound based on xanthone and application thereof. The compound uses xanthone as a parent nucleus, which is connected to a heteroaromatic group, so as to destroy the molecular symmetry, and thus further destroy the crystallinity of molecules and avoid the aggregation between molecules. The compound based on xanthone has good film-forming property, and can be applied to organic light emitting diode as a luminescent layer; and the OLED device using the compound based on xanthone has good photoelectric property, and can meet the requirements of panel manufacturing enterprises.

The invention discloses a FA<0.85>Cs<0.15>PbI<3> membrane-based broadband superspeed photodetector and a preparation method thereof. A FA<0.85>Cs<0.15>PbI<3> membrane is arranged on the upper surface of insulating glass, and a pair of gold membrane electrode in ohmic contact with the membrane is arranged on the FA<0.85>Cs<0.15>PbI<3> membrane. Due to use of the characteristic of a large specific surface area of the FA<0.85>Cs<0.15>PbI<3> membrane and full use of the super high electronic mobility of the membrane, the photodetector has superfast response speed, high light absorption performance, and high electromagnetic immunity, and can sense light ranging from ultraviolet to visible light flexibly. The invention raises new prospect for application of Perovskite materials in the photodetector.

A method for producing a product of a functionalized nanocomposition colloidal material using atomic layer deposition to coat the colloidal material. The ALD layer comprises an inorganic material which enables improved optical and electrical properties for the nanocomposite.

Metal base plate with high conductivity and high reflectance is adopted in the invention instead of traditional extinctive gallium arsenide base plate, and after diodes are made, two adjacent LED are connected in series through semiconductor fabricating process. Mirror protective layer is adhibited in order to protect metal reflecting layer p and n poles, in which one is higher and the other is lower, of epitaxy chip of LED so as to form LED with p and n poles being at same side. Trench at joint place between two adjacent epitaxy chips of LED is etched out, and a dielectric layer is filled into the trench in order to protect sidewall of adjacent LED. The invention raises luminous efficiency of LED, and increases luminous intensity.

The invention relates to a preparation method of a solar blind type ultraviolet detector based on Ga2O3 / CuAlO2 heterojunction. The method is characterized in that a layer of p-CuAlO2 thin film is deposited on a quartz (SiO2) substrate through a radio frequency magnetron sputtering technology; then, a layer of n-Ga2O3 thin film is deposited on the p-CuAlO2 thin film by using a mask plate through the radio frequency magnetron sputtering technology; the area of the n-Ga2O3 thin film is half of the area of the p-CuAlO2 thin film; finally, a layer of Ti / Au thin film is deposited on the p-CuAlO2 and n-Ga2O3 thin films by the radio frequency magnetron sputtering technology and is used as an electrode. The preparation method has the advantages that the prepared solar blind type ultraviolet detector has stable performance, sensitive response, small dark current and wide application range; in addition, the preparation method has the characteristics of high process controllability, simple operation, good universality, recoverability during repeated test and the like; great application prospects are realized.

The invention relates to an ultraviolet detection device based on a gallium oxide thin film and a preparation method thereof, in particular to an ultraviolet detection device based on a gold nanoparticle enhanced Ga2O3 thin film and a preparation method thereof. The preparation method includes the steps that a layer of Ga2O3 thin film is deposited on a Si substrate according to the radio-frequency magnetron sputtering technology; then, a layer of gold thin film is deposited on the surface of the Ga2O3 thin film, the obtained gold thin film is subjected to spheroidizing annealing, and thus gold particles are obtained; finally, a layer of gold thin film interdigital electrodes are deposited on the Au-Ga2O3 thin film with a mask. A photoelectric property testing result of the ultraviolet detection device shows that the device has good photoelectric responses. The ultraviolet detection device based on the gold nanoparticle enhanced gallium oxide thin film and the preparation method thereof have the advantages that the prepared ultraviolet detection device based on the gold nanoparticle enhanced gallium oxide thin film is stable in property, capable of making sensitive responses and small in dark current and has good potential application; besides, the preparation method is strong in process controllability, easy to implement and good in universality, has restorability in repeated testing and has broad application prospects.

A substrate includes a non-conductive portion to be electroless-plated of a substrate, on the surface of which fine metal catalyst particles composed of silver nuclei and palladium nuclei each having an average particle size of 1 nm or less adhere at a high nuclei density of 2000 nuclei / mum2 or more. The metal catalyst particles are produced by sensitizing the non-conductive portion of the substrate by dipping the substrate in a sensitizing solution containing bivalent tin ions, activating the non-conductive portion of the substrate by dipping the substrate in a first activator containing silver ions, and activating the non-conductive portion of the substrate by dipping the substrate in a second activator containing palladium ions.

The invention discloses a silicon-based hybrid integrated laser array and a preparation method thereof. The silicon-based hybrid integrated laser array comprises a plurality of distributed silicon-based hybrid integrated lasers in parallel integrated on an SOI substrate and an III-V semiconductor epitaxial layer. Each silicon-based hybrid integrated laser comprises: a silicon ridge waveguide; heatconducting layers located in special areas at two sides of the silicon ridge waveguide, wherein the special area is an area obtained after the SOI substrate removes a top silicon and a buried oxide layer; an intrinsic layer in a shape of a saddle and comprising a protrusion portion and a connection portion at two ends, wherein the protrusion portion at one end covers the upper portion of the heatconducting layers, the connection portion of the intrinsic layer is provided with an N-type waveguide layer, an active region and a P-type cover layer in order; an III-V waveguide formed by patterning the III-V semiconductor epitaxial layer and connected with the silicon ridge waveguide; a P-type ohmic contact layer; a P electrode; and an N electrode. The silicon-based hybrid integrated laser array is good in heat dissipation, simple and stable in preparation process, good in repeatability and low in manufacturing cost.

The invention discloses an organic compound containing dimethyl anthracene and application of the organic compound. The structural formula of the compound is as shown in the formula (1). The compound disclosed by the invention is relatively high in glass state temperature, good in molecular thermal stability, appropriate in HOMO and LUMO energy grade and relatively high in Eg, and through device structure optimization, the photoelectric property of an OLED device can be effectively improved, and the service life of the OLED device can be effectively prolonged.

The invention relates to a surface plasmon laser of a semiconductor nanowire-metal film structure, which mainly consists of a solid semiconductor nanowire, a hollow semiconductor nanowire, quantum dots and a metal film. The surface plasmon laser is of the semiconductor nanowire-metal film structure densely provided with the quantum dots, the semiconductor nanowire emits high-frequency laser underexternal excitation, the high-frequency laser is absorbed by the quantum dots on the surface of the nanowire, and low-frequency light is radiated, thus the wavelength of the laser is modulated, and asurface plamon mode is excited on the surface of the metal film. A plurality of light emitting peaks can be obtained to form a wide-spectrum light source by changing the radius, the surface shape, the materials and the like of the quantum dots. Compared with the traditional nano-quantum lasers, the surface plasmon laser disclosed by the invention obtains excellent nano-scaled coherent light, can also adjust the wavelength of output laser and has the advantages of small size, high light density, wavelength adjustment, wide-spectrum gain and the like.

The invention relates to a method for realizing controlled doping of nano silicon quantum dots, which belongs to the technical field of nano photoelectronic devices. The method comprises the steps of preparing a doped amorphous silicon film, preparing a doped amorphous silicon multilayer film, preparing doped nano silicon quantum dots in virtue of laser radiation, and the like. The invention provides a preparation method for convenient, rapid and effective controlled doping of the nano silicon quantum dots, and the method has short processing time, does not damage a film and a substrate in a nanosecond level, and is compatible with the current micro-electronics processing technology. In the implementation process, the method mainly adopts a high-energy laser to irradiate the surface of the film to obtain the nano silicon quantum dots with uniform size, simultaneously realize the controlled doping of impurity concentration and improve the photoelectric property of the film. The doped nano silicon quantum dots prepared by the method have wide application prospect in the fields of future nanoelectronics, nano photoelectronic devices and the like.

The invention discloses a method for preparing a carbon boron nitrogen doped double-tube titania nanotube array from ionic liquid on a titanium base, which comprises the steps that ionic liquid and organic solution are used as electrolyte, a titanium sheet is used as an anode, a platinum sheet is used as a cathode, the titanium sheet is anodized in ultrasonic bath, a carbon boron nitrogen doped double-tube TiO nanotube array is synthesized on the titanium base by self-assembly, and the sample is calcined in a nitrogen atmosphere tube furnace after washed and dried. The invention further extends light response range and enhances response capability to visible light through three-element doping, saves energy and has the advantages of simplicity in operation, adjustable design and composite structure, and high practical application value.

The invention refers to the technical field of semiconductor manufacturing, and particularly relates to a manufacturing method of a backside image sensor. The manufacturing method of the backside image sensor comprises the steps: forming an interconnection hole through etching a bonded wafer, and filling a metal to form a metal lead; meanwhile, synchronously preparing a metal isolating grid and a Pad layer contacted with the metal lead at the back side of the bonded wafer, and then embedding a color filter in the metal isolating grid. According to the manufacturing method of the backside image sensor, a metal layer in the bonded wafer can be derived and integrated with the Pad, thus requirements of simple and low-cost manufacturing technique can be realized on a certain extent; meanwhile, the metal isolating grid synchronously prepared with the Pad provides a good embedding environment for the subsequent color filter, a light path is minimized, and the optical-electrical characteristic and the output quality of the backside image sensor are greatly improved.

A substrate includes a non-conductive portion to be electroless-plated of a substrate, on the surface of which fine metal catalyst particles composed of silver nuclei and palladium nuclei each having an average particle size of 1 nm or less adhere at a high nuclei density of 2000 nuclei / mum2 or more. The metal catalyst particles are produced by sensitizing the non-conductive portion of the substrate by dipping the substrate in a sensitizing solution containing bivalent tin ions, activating the non-conductive portion of the substrate by dipping the substrate in a first activator containing silver ions, and activating the non-conductive portion of the substrate by dipping the substrate in a second activator containing palladium ions.

The invention provides a thin-film transistor and a producing method thereof. The thin-film transistor comprises a gate, an oxide channel layer, a gate insulation layer, a source, a drain and a dielectric layer. The gate is configured on a substrate. The oxide channel layer, which is configured on the substrate, stacks with the gate in an up and down manner. The material of the oxide channel layer comprises a metallic element and the content of the metallic element is in a gradient distribution along the depth direction of the oxide channel layer. The gate insulation layer is arranged between the gate and the oxide channel layer. The source and the drain which are parallelly configured are connected to the oxide channel layer. The dielectric layer is coated on the side, which is away from the substrate, of the source and the drain.

The invention discloses a method for preparing a backside-polished PERC battery. The method comprises: (1), depositing a single-sided protective film on the backside of a silicon wafer; (2) carrying out texturing on the silicon wafer plated with the single-sided protective film and removing the single-sided protective film of the silicon wafer during a pickling process after texturing; (3), carrying out diffusion on the single-sided-textured silicon wafer; (4), carrying out conventional secondary cleaning; and (5), depositing aluminium oxide / silicon nitride laminated passivation film at the back side, carrying out laser grooving, screen printing and sintering, thereby obtaining a backside-polished PERC battery. According to the method disclosed by the invention, the volume production threshold is low; the operation cost is low; micro-nano flatness is realized; and the photoelectric conversion of the battery is improved.

This invention relates to a new technology for growing group III nitride semiconductor mono-crystal material, which grows two buffer layer and one graded bedding before growing the semiconductor material, buffer layer 2 is SiO2 film, buffer layer 3 is AIN film and the graded bedding is a rich GaN grown under high temperature and deviating from the chemical test ratio. The two buffer layers and the graded bedding structure can reduce the crack of nitride group III semiconductor mono-crystal material due to the too large difference of the thermal expansion factor between the substrate and the material and the high defect concentration because of the mismatched lattices.

The invention discloses a g-C3N4 / TiO2 composite photochemical catalyst, which has an arced sheet structure, wherein the sheet structure is obtained by crushing through the hollow microspheric g-C3N4 / TiO2 composite photochemical catalyst; the hollow microspheric g-C3N4 / TiO2 composite photochemical catalyst is divided into an inside photochemical catalyst and an outside photochemical catalyst; the inside photochemical catalyst is TiO2; the outside photochemical catalyst is g-C3N4. By using the composite photochemical catalyst, the utilization ratio of photo-induced electron-holes is improved; the quantum efficiency of the photochemical catalyst is improved; the service life of the photochemical catalyst is prolonged; the preparation method of the g-C3N4 / TiO2 composite photochemical catalyst is simple, convenient and low-cost, is mild in condition, and is beneficial to large-scale preparation.

The invention discloses a preparation method and application of a porous carbon-rich g-C3N4 photocatalyst. According to the preparation method, melamine and activated carbon powder are taken as raw materials, a melamine precursor is modified by using the activated carbon powder, and the g-C3N4 photocatalyst is prepared through twice roasting in different environments. The g-C3N4 prepared with thepreparation method provided by the invention is large in surface area and high in porosity; a porous structure can effectively improve the energy conversion efficiency and increase a semiconductor specific surface area, thereby providing more surface active sites and improving the photocatalytic activity. Furthermore, a nanopore wall structure reduces the transmission distance of a photo-induced electron hole, improves the separation efficiency of the photo-induced electrons and holes, reduces the recombination rate, and greatly improves the photocatalytic activity under visible light. The method disclosed by the invention has the advantages of being low in cost and convenient to operate. By utilizing the characteristics that harmful substances such as rhodamine B and the like can be degraded by the g-C3N4 photocatalyst under visible light irradiation, the photocatalyst has important actual application value in the environment purification and cleaning energy source production.

A touch panel includes a substrate, first and second touch sensing electrodes, and first and second traces. The substrate includes a display area and a peripheral area. The first and second touch sensing electrodes are formed on the display area, and the first and second traces are formed on the peripheral area. The first touch sensing electrode is formed by a first portion of a metal nanowire layer, which is patterned. The peripheral trace includes a conductive layer and a second portion of the metal nanowire layer, both of which are patterned in a co-etch step. The conductive layer and the second portion of the metal nanowire layer have a coplanar etched surface. The second touch sensing electrode is formed on an insulating layer and connects with the second trace.

The invention provides a single-sided light emission light emitting element and a production method thereof, and relates to the field of semiconductor device packaging. Two electrodes are arranged at the bottom of a light emitting diode. The single-sided light emission light emitting element is characterized in that a fluorescent powder glue layer is arranged on the front of the light emitting diode, and reflective glue layers are arranged on four sides of the light emitting diode. The preparation method is characterized in that a single single-sided light emitting diode without cutting marks on four sides without cutting is acquired, and the fluorescent powder glue layer of the light emission side of the light emitting diode can be designed through repeated filling. According to the invention, the preparation process does not need expensive and high-precision cutting equipment, so that an enterprise can have more abundant capital to expand production; since cutting is prevented, the utilization ratio of fluorescent powder glue is improved; and production period is shortened.

The invention relates to a method for producing a composite transparent electrode by adopting a graphene film and a metallic network. The method includes the following steps that: egg white gel is prepared; a sheet body provided with a reticular crack gel mold sacrificial layer is prepared; a metallic network electrode is prepared; and the graphene film is prepared; and the composite transparent electrode can be obtained. According to the method of the invention, the egg white gel is adopted as the reticular crack mold and the sacrificial layer of the metallic network electrode, and the metallic network electrode in the composite electrode is prepared through utilizing magnetron sputtering or vacuum evaporation; the graphene film covers the metallic network electrode and a transparent insulating substrate; and the square resistance of the formed composite transparent electrode ranges from 25 to 30 Omega / sq, and the light transmittance of the composite transparent electrode ranges from 90 to 92 %. With the method adopted, production techniques can be simplified, the photoelectric characteristics and productivity of the composite transparent electrode can be improved, and the production cost of the composite transparent electrode can be effectively decreased. The method can be widely applied to photoelectric devices such as organic solar cells, organic light emitting diodes and touch screens. The method can be applied to preparation of large-area and high-quality composited transparent electrodes.

The present invention relates to a method for growth of germanium quantum dots. In the method, germanium quantum dots are grown on graphene interfaces with different quantities of layers. In the present invention, ultra-high uniformity graphene interfaces are introduced on a conventional substrate surface, Ge quantum dots are grown on the interfaces, and complicated cleaning processes for obtaining high-quality interfaces are avoided, and process flows are simplified; in addition, the low-matrix element content and the low defect rate of the germanium quantum dots are ensured, a self-organization growth process of the germanium quantum dots is ensured, and germanium quantum dots with good shape and uniformity are formed.

The invention relates to a molybdenum sulfide-graphene heterojunction photoconductive detector and a preparation method of the heterojunction thereof.The molybdenum sulfide-graphene heterojunction photoconductive detector comprises the heterojunction. The heterojunction comprises a MoS2 layer arranged on a SiO2 / Si substrate layer.A graphene layer is arranged on the MoS2 layer, and a plurality of metal electrodes are arranged on the graphene layer. The two-dimensional material heterojunction negative photoconductive detector with low cost and high responsiveness and the preparation method thereof are provided. With application of the two-dimensional material transfer technology, the impurity problem in the interface layer of the graphene / TMDC heterojunction is reduced and the photoelectriccharacteristics of the graphene / TMDC photoconductive detector are improved.