Silicon-based hybrid integrated laser array and preparation method thereof

Abstract

The invention discloses a silicon-based hybrid integrated laser array and a preparation method thereof. The silicon-based hybrid integrated laser array comprises a plurality of distributed silicon-based hybrid integrated lasers in parallel integrated on an SOI substrate and an III-V semiconductor epitaxial layer. Each silicon-based hybrid integrated laser comprises: a silicon ridge waveguide; heatconducting layers located in special areas at two sides of the silicon ridge waveguide, wherein the special area is an area obtained after the SOI substrate removes a top silicon and a buried oxide layer; an intrinsic layer in a shape of a saddle and comprising a protrusion portion and a connection portion at two ends, wherein the protrusion portion at one end covers the upper portion of the heatconducting layers, the connection portion of the intrinsic layer is provided with an N-type waveguide layer, an active region and a P-type cover layer in order; an III-V waveguide formed by patterning the III-V semiconductor epitaxial layer and connected with the silicon ridge waveguide; a P-type ohmic contact layer; a P electrode; and an N electrode. The silicon-based hybrid integrated laser array is good in heat dissipation, simple and stable in preparation process, good in repeatability and low in manufacturing cost.

Description

Technical field [0001] The present disclosure belongs to the field of laser technology and relates to a silicon-based hybrid integrated laser array and a preparation method thereof. Background technique [0002] With the development of technology, people have higher and higher requirements for data transmission rate, transmission bandwidth and energy consumption. Restricted by the physical characteristics of electronics, traditional electrical interconnections based on electrical integrated chips consume energy when transmitting high-speed signals. Large, narrow bandwidth and high cost bottlenecks of optoelectronic integrated systems; photons have the characteristics of ultra-high transmission speed, ultra-high parallelism, ultra-high bandwidth and ultra-low transmission and interaction power consumption. Because silicon photonics integration combines the ultra-large-scale logic, ultra-high-precision manufacturing, and low-cost advantages of the CMOS process, silicon-based o...

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Problems solved by technology

Although this solution can realize self-aligned silicon-based hybrid integrated lasers on an SOI material, it does not require precise alignment technology between SOI and III-V, but the requirements for epitaxy technology are very high, and the current technology is still immature. It needs to be explored, and the influence of poor heat dissipation characteristics of the buried oxide layer in the SOI substrate on the device has not been studied

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