1.55-micron-wavelength silicon-based quantum dot laser epitaxial material and preparation method thereof

Abstract

The invention relates to the technical field of semiconductor lasers, in particular to a 1.55-micron-wavelength silicon-based quantum dot laser epitaxial material and a preparation method thereof. Themethod is characterized by comprising the following steps of: 101, preparing a strip-shaped pattern mask on a monocrystalline silicon substrate; 102, etching a window of the V-shaped groove; 103, selectively growing a buffer layer in the V-shaped groove window region; 104, transversely growing a merging layer; 105, growing a strain superlattice dislocation barrier layer; 106, growing an n-type ohmic contact layer; 107, growing an n-type lower limiting layer; 108, growing a lower waveguide layer; 109, growing a multi-layer quantum dot active region; 110, growing an upper waveguide layer; 111,growing a p-type upper limiting layer; and 112, growing a p-type ohmic contact layer to complete preparation. The growth quality of the laser epitaxial material is effectively improved, and the performance of the laser is improved.

Description

Technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a 1.55 micron wavelength silicon-based quantum dot laser epitaxial material and a preparation method. Background technique [0002] Microelectronics technology based on silicon substrates promotes the continuous development of modern society. At present, various information and communication products based on microelectronics technology have penetrated into all aspects of people's lives, including mobile phones, computers, smart cars, and global positioning systems. Wait for almost all scenarios where the chip is needed. Due to the explosive growth of information, people's requirements for data capacity and data transmission rate are getting higher and higher. Microelectronics technology uses electricity to transmit and process information. Because of the true quality of electrons, they are obstructed by other atoms in the transmission medium during the transmission pro...

AI Technical Summary

Problems solved by technology

However, this method of transition through the buffer layer will make the part of the laser active region structure to the substrate too thick, which is not conducive to silicon-based optoelectronic integration, and makes the growth time of laser epitaxial materials too long

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