GaN power device based on ion implantation and manufacturing method thereof

Abstract

The invention discloses a GaN power device based on ion implantation and a manufacturing method thereof. The GaN power device includes a GaN buffering layer, a GaN channel layer and an AiGaN barrier layer which are successively arranged from bottom to top. The A1GaN barrier layer is provided with an active electrode, a gate electrode and a drain electrode thereon, wherein the active electrode and the drain electrode are both ohmic contacts, the gate electrode is a Schottky contact, and all electrodes are covered with a passivation layer therebetween. The passivation layer is connected to the A1Gan barrier layer. The A1Gan barrier layer and the Gan channel layer are heterostructures and the interface between the A1Gan barrier layer and the Gan channel layer forms a 2D electron gas which acts as a transverse working conductive channel of the GaN power device due to polarization effects. An ion isolation region is formed by performing ion implantation on the bottom surface of the GaN buffering layer. The ion isolation region is disposed in the upper part of the GaN buffering layer and is connected to the GaN channel layer, and the GaN buffering layer is provided with an ion isolation region therein and then the bottom surface of the GaN buffering layer is bonded to a high heat conductive substrate. According to the invention, since an ion isolation region is formed by performing ion implantation, the GaN channel and the GaN buffering layer are isolated, such that current leakage is reduced and breakdown voltage is increased.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a GaN power device based on ion implantation and a manufacturing method thereof. Background technique [0002] As a representative of the third-generation wide-bandgap semiconductor materials, GaN is a new type of semiconductor developed in the past 20 to 30 years after the first generation represented by Si and Ge and the second-generation semiconductor materials represented by GaAs and InP. Material. GaN material has the characteristics of high critical breakdown field strength, large bandgap width, high carrier mobility, high saturated electron drift velocity, and large thermal conductivity. It has incomparable advantages over traditional Si materials and is very suitable for making 300℃), high-power, low-loss power electronic devices can realize the miniaturization, weight reduction and cost reduction of the system, and can make the system more efficient and energy-savin...

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Problems solved by technology

However, its ion implantation will cause implantation damage, which will cause the quality of material growth to deteriorate during the second epitaxy, and a series of treatments on the sample may also introduce contamination (references: Sun S, Fu K, Yu G, et al . AlGaN / GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation[J]. Applied Physics Letters, 2016, 108(1): 013507.)

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