351results about How to "Shortened growth time" patented technology

The invention discloses a Chinese medicinal herb additive for promoting the growth of a piglet and the application thereof; wherein the additive comprises the following components: officinal magnolia bark, bitter orange, Chinese pulsatilla root, medicated leaven, rhizoma discoreae, sepium, dangshen, polygonummultiflorum thunb, hawthorn, rhizoma atractylodis, dried orange peel, milk veteh, malt, the rhizome of large-headed atractylodes, and wild jujube. According to the physiological function of the piglet, all components with the pertinence are compatible with each other, make good for deficiency, are cooperated with each other and mixed in a matching way. Proved by experiments, the additive has the functions of invigorating the stomach, helping digestion, promoting blood circulation, removing blood stasis, calming the nerves, tranquilizing, and increasing immunity, can prevent disease, treat an illness, help the growth, increase the disease resistance of the piglet, does not have any side effect and harmful substance to be remained; only about 20% of dosage of the additive can play greater function; the additive does not harm the digestive system of the piglet and other physiological functions and is beneficial for the growth of the piglet and the strengthen of disease-resistance capability.

An image heating device with a small thermal capacity that can be heated rapidly. The image heating device includes a fixing belt (20) having a heat resistance; a rotatable heat-generating roller (21), which is at least partially conductive and arranged in contact with an inner peripheral surface of the fixing belt (20); a fixing roller (22), the fixing roller and the heat-generating roller (21) movably suspending the fixing belt (20) therebetween; and a magnetization means (24) for heating the heat-generating roller (21) through magnetization, which is arranged outside the heat-generating roller (21). In this image heating device, the magnetization means (24) heats the heat-generating roller (21) through magnetization after a rotating operation of the heat-generating roller (21) is started.

Production of gypsum in phosphorous liquid involves preparing a phosphorous extracting liquid and a gypsum crystal whisker suspending liquid. The phosphorous extracting liquid is prepared by extracting 30 - 40% phosphorous acid with ores at 50 - 95deg.C for 2 - 4h, separating liquid phase and filtering to obtain products with H3PO4 3 - 4mol / L and Ca2+ 0.8 - 1.2mol / L. The suspending liquid is prepared by adding the said liquid into 30 - 35% sulfuric acid solution gradually, stirring and reacting at (50 - 100)deg.C for 120 - 150min. Hemi-hydrated or anhydrous gypsum whiskers are obtained after filtering the suspending liquid, cleansing with boiled water, and drying at (120 - 200)deg.C. The process reduces generating temperature and cost in production, shortens production time, and qualifies their performance, so that it can be widely used in production of gypsum whiskers.

An image heating device with a small thermal capacity that can be heated rapidly. The image heating device includes a fixing belt (20) having a heat resistance; a rotatable heat-generating roller (21), which is at least partially conductive and arranged in contact with an inner peripheral surface of the fixing belt (20); a fixing roller (22), the fixing roller and the heat-generating roller (21) movably suspending the fixing belt (20) therebetween; and a magnetization means (24) for heating the heat-generating roller (21) through magnetization, which is arranged outside the heat-generating roller (21). In this image heating device, the magnetization means (24) heats the heat-generating roller (21) through magnetization after a rotating operation of the heat-generating roller (21) is started.

The invention provides a cultivating method of a poria cocos bag material and relates to a method for cultivating poria cocos without using pine-wood. The method comprises the following steps: grinding the plant straws or branches, mixing evenly with pine wood chips, rice bran, sucrose, calcined gypsum and the like, and manufacturing into a bacteria bag; inoculating the poria cocos strain after the bacteria bag is sterilized and then is placed in a greenhouse to cultivate poria cocos hypha; embedding into a cultivation cellar when the poria cocos bacteria hypha grows and the bacteria bag is filled with the poria cocos bacteria hypha; selecting the intensive part of the hypha body in the bacteria bag to inoculate a small block of tender fresh poria cocos sclerotium block; then earthing and encapsulating the cellar; leading the poria cocos hypha in the fresh sclerotium block to recover the vitality, and fusing with the hypha body in the cultivating bacteria bag to form sclerotium primordium, then growing to form newly born sclerotium. The invention utilizes plant straws or branches rich in cellulose and hemicellulose, pine wood chips, rice bran, sucrose and the like to manufacture into the cultivation bacteria bag to substitute pine wood, thus not only turning waste into wealth, effectively protecting pinery resources, but also needing only 3 to 4 months for the picking time, thereby being beneficial for the circulating and comprehensive utilization of the cultivation site and enlarging the production of poria cocos.

The present invention improves a productivity in growing an a-Si film in a thin film transistor and to obtain an excellent thin film transistor characteristic. More specifically, disclosed is a thin film transistor in which an amorphous silicon film 2, a gate insulating film 3 and a gate electrode are sequentially stacked on an insulating substrate 1. The amorphous silicon film 2 includes a low defect-density amorphous silicon layer 5 formed at a low deposition rate and a high deposition rate amorphous silicon layer 6 formed at a deposition rate higher than that of the low defect-density amorphous silicon layer 5. The low defect-density amorphous silicon layer 5 in the amorphous silicon film 2 is grown closer to the insulating substrate 1, and the high deposition rate amorphous silicon layer 6 is grown closer to the gate insulating film 3.

Disclosed herein is an attaching device for extension eyelashes adapted to attach false eyelashes to natural eyelashes by overlapping the false eyelashes containing an adhesive with the natural eyelashes and applying heat to the adhesive. The device includes a body defining a space therein and shaped to be held by a hand. A support is formed on an end of the body to support the false eyelashes. An inner grip is shaped to surround the support, and grips the natural eyelashes and the false eyelashes. An outer grip is shaped to surround the inner grip, further grips the natural eyelashes and the false eyelashes that are gripped by the inner grip, and applies heat to the adhesive contained in the false eyelashes. A manipulating portion is slidably coupled to an exterior of the body and moved to sequentially operate the inner grip and the outer grip.

The invention discloses a high-yield cultivation method for pleurotus eryngii. The method comprises the steps of stripping the plastic bag of a fungus bag overgrown with hypha, so as to promote complete postripeness of the hypha, then accelerating the bud of the pleurotus eryngii to form intensively by stimulation of low temperature and variable temperature, spraying nutrient solution and covering nutrient soil to promote fruiting bodies to form and grow. The invention also discloses matched formulas of a cultivating culture medium, a nutrient solution and nutrient soil (a culture medium A, nutrient soil A and a nutrient solution A). By adopting the production method of combination of stimulation of low temperature and variable temperature, stripping of the fungus bag and covering of the nutrient soil, and corresponding production formulas, the yield of the pleurotus eryngii can be improved, the growing time of the hypha can be shortened, the cost of the medium is lowered appropriately, and the pleurotus eryngii fruits early and intensively in a certain period.

The invention relates to the technical field of epitaxial growth of semiconductor materials, and discloses a high pressure resistant nitride semiconductor epitaxial structure and a growing method thereof. The high pressure resistant nitride semiconductor epitaxial structure sequentially includes a substrate, a nucleating layer, an impurity filter layer, a complex nitride epitaxial buffer layer, an electron barrier layer, a non-doped gallium nitride channel layer and a heterojunction barrier layer from the bottom up; the complex nitride epitaxial buffer layer includes a high-resistance aluminum-enriched nitride stress buffer layer and a high-resistance top gallium nitride buffer layer positioned on the high-resistance aluminum-enriched nitride stress buffer layer. The high pressure resistant nitride semiconductor epitaxial structure can improve the stress status in the nitride semiconductor epitaxial layer on the silicon substrate and reduce warping of the epitaxial wafer under the premise of slightly influencing the performance of a heterojunction two-dimensional electron gas channel at the upper layer. The leak current characteristic of the nitride semiconductor epitaxial layer on the silicon substrate is greatly reduced, the unit thickness compression capacity of the nitride semiconductor epitaxial layer on the silicon substrate is improved, and thereby the growth time of epitaxy can be reduced, and the production cost is lowered.

The invention brings forward a quantum well luminescent layer and a formation method thereof. The method comprises the following steps: forming an InGaN trap layer; and forming an InGaN barrier layer on the InGaN trap layer. The formation of the InGaN barrier layer further comprises forming an InGaN heating layer on the InGaN trap layer, forming an InGaN stabilizing layer on the InGaN heating layer, and forming an InGaN cooling layer on the InGaN stabilizing layer, wherein the indium content in the InGaN trap layer is first indium content, the indium content in the InGaN barrier layer is second indium content, and the first indium content is greater than the second indium content. By using the quantum well luminescent layer and the formation method thereof, the internal quantum efficiency of the quantum well luminescent layer can be improved, the LED epitaxial wafer luminescence efficiency is improved, and the quantum well luminescent layer and the formation method thereof are more suitable for the demand of a large-power epitaxial wafer.

The invention provides an under-forest wild-imitating planting method for polygonatumkingianum. The under-forest wild-imitating planting method includes the steps of seedling selection, pregermination in sand bed and under-forest planting, wherein the under-forest planting includes the steps of soil preparation, furrowing, field planting, fertilization, disease elimination and weeding. The method has the advantages that seedling emergence and growth situations during planting are good, growth time is shortened as compared with that of wild growth, less cultivated land is used as compared with that in field planting, pesticide and chemical fertilizer residues are reduced, product quality is improved, forest land output benefits are increased, and the method is suitable for not only production application of individual peasant households but also large-scale corporatized operation. The method has the specific advantages of less cultivated land use, benefit to grain safety, capability of widening forestry income range, benefit to forest resource protection, reduction of production cost of a genuine medicinal material, namely the polygonatumkingianum, and improvement on product quantity.

The invention provides a new technology of inducing clustered shoots from parispolyphylla rhizome for rapid vegetative propagation. The new technology comprises: selecting a parispolyphylla rhizome to keep in reserve, drying in air for 3-7 days, making incisions on the back of the rhizome by using a cutter, immersing the incisions in an ABT rooting powder solution with a concentration of 10-30 ppm fro 2-10 h, disinfecting the incisions by plant ash, coating the parispolyphylla rhizome with a mixture of plant ash and clean river sands, transplanting and cultivating the parispolyphylla rhizome according to strains, coating fine soil with thickness of 5 mm on the parispolyphylla rhizome. After planting the rhizome, cluster buds germinate from stock plants and grow for about one year, then each parispolyphylla stock plant generates about more than twenty plantlets each of which possesses buds, small rhizome and a fine root, and the plantlets are taken as parispolyphylla seedlings for transplanting, and after 3-4 years, parispolyphylla finished products are obtained. The new technology has high propagation coefficient, and the produced parispolyphylla plantlets have high survival rate and fast growth speed. Compared with parispolyphylla seed propagation, the new technology helps to shorten more than one third of growth time of a finished product; and compared with a parispolyphylla rhizome fragment propagation method, the new technology helps to improve propagation coefficient by 4-6 times, and helps to solve the raw material gap facing medicinal materials and industrial production.

The invention discloses a method for ultrasonic auxiliary laser additive manufacturing of a two-dimension titanium-based functional gradient material, and belongs to the technical field of laser additive manufacturing. The two-dimension titanium-based functional gradient material is in one-dimension gradient transition in the XY and YZ plane and is in two-dimension gradient transition in space. According to the preset each-deposition-layer gradient transition form, the area a at the lower left corner is in 7-shaped transition to the area k at the upper right corner, accordingly, bottom ultrasonic is ensured, and sufficient interference is conducted on the molten bath flowing and solidifying process during high-proportion ceramic particle adding. In different gradient areas in the XY and YZplane, optimized direct laser deposition technological parameters and ultrasonic acting parameters are adopted, heat accumulation, the size and content of non-melted ceramic particles and the size ofa thick branch-shaped primary phase are reduced, and accordingly the integral performance of the titanium-based functional gradient material is improved. A laser head conducts scanning according to the 7-shaped path, the number of gradient combined interfaces between adjacent ways is reduced, and the integral performance of the titanium-based functional gradient material can be better improved. By means of the method, uniform distribution of the ceramic particles can be promoted, thick dendritic crystals are crushed, a microcosmic structure is refined, and accordingly the integral performanceof the two-dimension titanium-based functional gradient material is improved.

The invention relates to an alterant of an iron-rich phase in secondary aluminum and an alteration method. The alterant is composed of a [Mn] agent and a [B] agent. The alteration method includes the steps that part of secondary aluminum is heated to form a melt, then the [Mn] agent is added, the remaining secondary aluminum is added after the [Mn] agent melts, the [B] agent is added, refining is carried out after the [B] agent melts, pouring is carried out after standing is carried out for a period of time, and the secondary aluminum obtained after alteration treatment is obtained. According to the alterant and the alteration method, the Fe element in the iron-rich phase can be replaced through the [Mn] agent, the advantage growth orientation of the iron-rich phase is changed, and therefore a needle-like beta-Fe phase is eliminated; meanwhile, the forming temperature of the iron-rich phase can be reduced through B in the [B] agent, the growth time of a primary iron-rich phase is shortened, the growth space of the primary iron-rich phase is reduced, the B can also serve as a surface-active element, and is absorbed to the surface of the iron-rich phase in the initial phase of formation of the iron-rich phase, and growth of the iron-rich phase is restrained, so that through the combined action of the [Mn] agent and the [B] agent, existence of the needle-like iron-rich phase and the primary iron-rich phase can be completely eliminated, the uniform Chinese character type iron-rich phase is obtained; and in addition, the adding amount of the Mn can be greatly reduced, and the mechanical performance and the machining performance of the secondary aluminum can be greatly improved.

A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 μm, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and / or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g / cm3 for the intended crystal growth.

An epitaxy production method of a light emitting diode (LED) relates to a semiconductor technology field. A low temperature aluminum nitride gallium indium nucleating layer, an unintended doped gallium nitride layer, a doping gallium nitride layer, a doped GaN and non-doped GaN alternative periodic structure layer, an InGaN / GaN of multiple quantum well luminescence layer and a doped gallium nitride layer are successively grown on a substrate. In the invention, the doped GaN and non-doped GaN alternative growing periodic structure is inserted between the doping GaN and a multiple quantum well luminescence region so that internal capacitance of a GaN-based LED device can be increased and a current expansion ability of the GaN-based LED can be improved. Therefore, antistatic performance can be improved; a working voltage of the GaN-based LED can be reduced and a luminous efficiency can be raised.

The invention provides an InGaN-based blue-green light-emitting diode epitaxial growth method and a structure thereof, wherein the growth method of the epitaxial structure comprises specifically the following steps: performing a high temperature annealing process on a sapphire substrate in an ammonia atmosphere, reducing the temperature to 530-580 degrees and adjusting epitaxial growth atmosphere to grow a low temperature InGaN nucleation layer, and then raising the temperature and sequentially growing an InGan unintentionally doped layer, an n-type InGaN layer, an InyGa1-yN / InxGa1-xN(y> x) multi-quantum well active layer, A p-AlInGaN electron blocking layer, A p-type InGaN layer and the p++ type InGaN contact layer. The InGaN-based blue-green LED epitaxial structure provided in the present invention can effectively reduce the piezoelectric polarization field in an active area to thereby improve light emitting efficiency since the structure reduces lattice mismatch between a quantum well material and a matrix material.

The invention provides a nickel-cobalt-phosphorus crystal, and a preparation method and an application thereof. The nickel-cobalt-phosphorus crystal prepared through controlling the proportions of elements in nickel-cobalt-phosphorus, the morphology and the dimension has very good catalysis activity in water electrolysis as a water electrolysis catalyst. According to the embodiment in the invention, the nickel-cobalt-phosphorus crystal has similar catalysis activity to commercial platinized carbon electrodes as a water electrolysis catalyst, can be used in electrocatalytic hydrogen evolution and oxygen production, has a stable catalysis performance and has very good industrial application prospect. Compared with traditional high temperature solid phase reaction, the nickel-cobalt-phosphorus crystal preparation method provided by the invention has the advantages of simple operating process, mild synthesis conditions, easy control of the product morphology, great shortening of the growth time of the synthesized nickel-cobalt-phosphorus crystal, reduction of the reaction temperature, energy consumption saving, high product yield, low cost and large-scale industrial production.

The invention discloses a method for manufacturing a high-growth-rate LED (light-emitting diode) with a P-type GaN structure. The method comprises the following steps of: heating a substrate in a reaction chamber, cooling and growing a low-temperature GaN buffer layer, and heating and growing a high-temperature GaN buffer layer; growing an N-type GaN layer on the buffer layer, growing 2 to 10 InGaN / GaN quantum wells on the N-type GaN layer, and growing 3 to 15 InGaN / GaN quantum wells; and growing a P-type GaN layer on the quantum well layer. The P-type GaN layer is grown by means of a high growth rate, the growth time is shortened, In exertion can be reduced due to the LED structure, and the damage to the InGaN close to the period is reduced; and therefore, the damage to a multiple quantum well structure in a luminous layer is effectively reduced, the quantum well crystal quality is improved, and the light extraction efficiency is improved.

The invention discloses a grass planting system based on soilless culture. The system comprises an incubator body which can be sealed manually, a temperature control unit, an illumination control unit, a moisture control unit and a central control unit, wherein the incubator body is internally provided with a grass culture unit, the temperature control unit is used for controlling and regulating the ambient temperature in the incubator body, the illumination control unit is used for controlling and regulating the illumination supply in the incubator body, the moisture control unit is used for controlling and regulating the moisture supply in the incubator body, and the central control unit is respectively connected with the temperature control unit, the illumination control unit and the moisture control unit electrically and is used for jointly controlling the temperature control unit, the illumination control unit and the moisture control unit. The system can be used for automatically controlling the growth environment of grass, the growth of grass is completely isolated from the external environment and is not influenced by the external environment, the automation degree of the planting system is improved greatly, the growth time of grass is shortened greatly, the culture efficiency is improved, and the yield of grass is large.

The invention discloses a method for preparing a texture of a silicon solar cell under a magnetic field. The method comprises the following technological steps: firstly, a polysilicon wafer is put into a texture preparation reactor with prepared acid reaction solution for reaction, and the texture preparation reactor is put in the magnetic field, wherein, the reaction solution is made from 0.05%-15% of nitric acid or chromic acid by mass, 1%-30% of hydrofluoric acid by mass and 1%-30% of phosphoric acid or acetic acid by mass; the temperature of the reaction solution is kept at 0-30 DEG C, and the polysilicon wafer is washed in 0.5%-3% sodium hydroxide solution for 1-5 minutes after reaction in the acid solution; secondly, the magnetic field is applied in the whole course of preparing the texture of the silicon solar cell, the magnetic field strength is kept at 0-10T, and the texture preparation time is 1-45 minutes. A compact and even texture can be grown on the surface of the polysilicon wafer by the method, thus realizing the high-efficiency and even production of the silicon solar cell texture by acid oxidants under the magnetic field.

The invention provides a low-cost rare earth scintillation crystal. The rare earth scintillation crystal is prepared from RE2O3, silicon dioxide, cerium oxide and lutecium oxide through crystal growth; the ratio of the sum of mass of RE2O3, cerium oxide and lutecium oxide to mass of silicon dioxide is (0.75-1.25): 1; the ratio of mass of cerium oxide to the sum of mass of RE2O3 and lutecium oxide is (0.005-0.04): 1; the mass ratio of RE2O3 to lutecium oxide is (0.005-1): 1. The ratio of raw materials is determined in accordance with relationship between composition and the temperature in a crystal growth congruent melting region; the liquid / solid phase change temperature point in the scintillation crystal growth process can be effectively lowered by adopting the special raw material ratios, energy consumption and precious metal consumption for crystal growth are reduced, shortening of growth time is facilitated due to the rapid growth process, the crystal yield is high, and the apparent low-cost advantage is achieved.

The invention belongs to the field of phytoremediation of heavy metal polluted soil, and discloses a method for improving phytoremediation efficiency of copper-polluted soil on the basis of the existing phytoremediation method for the heavy metal polluted soil. The method comprises the following steps: applying a chemical enhancer containing powdered sulfur and ethylenediaminedisuccinic acid to the copper-polluted soil; spraying a nutrient solution containing exogenous plant hormone naming zeatin Z at a fixed period after planting elsholtzia splendens; picking the aboveground parts of elsholtzia splendens after the growing season is finished, so as to reach the purpose of remediating the heavy-metal copper polluted soil. With the adoption of the method, the growth of elsholtzia splendens is promoted, and the problems that high-copper soil represented by soil in a copper mine area inhibits the growth of elsholtzia splendens and causes short plant, small biomass and slow growth can be solved; the method has the advantages of being high in absorbing efficiency, high in degree of enrichment, and obvious in remediation effect.

The present invention provides a method for directed selective solid-phase culturing of stable microbial mixed populations for the continuous preparation of defined enzyme and metabolite mixtures, enzyme and metabolite materials obtained by such method and suitable devices therefore.

This invention relates to one light diode of current streghening window layer structure in semiconductor photo electricity technique, which comprises top electrode, current extensive layer, top limit layer, source area, down limit layer, buffer layer, underlay, down electrode, DBR reflection layer, wherein, the top electrode ad current extensive layer are set with conductive transparent layer; the current block layer is set on or down extensive layer to form current transporting window layer by transparent layer, current extensive layer and current block layer.

The invention discloses a method for enhancing adipic acid yield in Escherichia coli, belonging to the field of bioengineering. The method is implemented by overexpressing beta-ketothiolase gene, 3-hydroxyacyl-coenzyme A dehydrogenase gene, 3-hydroxyadipyl dehydrogenase gene, 5-carboxyl-2-pentene acylcoenzymea A reductase gene and adipyl coenzyme A in different modules by using atoB-gene-knock-out Escherichia coli BL21 (DE3) as a host; and the adipic acid yield can reach 25.57 g / L. The recombinant bacterium can also perform cyclic fermentation; and after ten cycles, the adipic acid accumulated yield is up to 18.94 g / L. The method has important functions on industrial continuous mass production, can shorten the thallus growth time, and has the advantages of time saving, high speed and cost saving since the cyclic thallus fermentation is directly utilized.

The invention discloses a soilless culture melon and fruit planting system, comprising a cultivation frame, wherein a liquid storage tank is arranged on the cultivation frame, the liquid storage tank is internally provided with a liquid storage cavity used for a nutrient solution to flow, the liquid storage tank is provided with a cultivation pot used for cultivating melon and fruit plants, the cultivation pot is internally provided with a cultivation cavity, the cultivation cavity is communicated with the liquid storage cavity by virtue of a liquid receiver. The system also comprises (1) a nutrient solution conveying and circulating unit, (2) a control unit and (3) a plant growth light, wherein the nutrient solution conveying and circulating unit is communicated with the cultivation cavity in the cultivation pot and the liquid storage cavity in the liquid storage tank to form a circulation loop, the control unit is electrically connected with the nutrient solution conveying and circulating unit and the plant growth light (3) is electrically connected with the control unit and is controlled by the control unit. The system disclosed by the invention can completely intelligently control a nutrition supply system and illumination automatic supply or supplement by virtue of a control center, degree of automation is high, melons and fruits grow in an environment with sufficient nutrients, production time is greatly shortened compared with natural environment and other open type artificial soilless culture environment, cultivation efficiency is improved, and yield is high.

The invention discloses an agrocybe cylindracea culture medium and a preparation method thereof. A formula of the culture medium comprises, by weight, 15%-20% of peach tree chips, 20%-25% of willow tree chips, 10%-15% of tea shells, 4%-6% of peptone powder, 2%-4% of agar strips, 3%-5% of plant ash and 1%-3% of gypsum. By adopting the agrocybe cylindracea culture medium, the yield of agrocybe cylindracea can be greatly improved, vigorous growth of the agrocybe cylindracea can be guaranteed, stem bodies of bacterial strains are thick and solid, and the length of the stem bodies is larger than that of stem bodies of common agrocybe cylindracea. The utilization of waste products is achieved, the manufacture and production cost is low, and the economic benefit of the agrocybe cylindracea is improved. Selected material particles are small, full mixing of raw materials is facilitated and is even, absorption of root systems of the agrocybe cylindracea is facilitated, and the growth time of the agrocybe cylindracea is shortened.

The invention discloses a leaf vegetable planting system based on soilless culture. The system comprises a culture frame, wherein the culture frame is provided with a planting trough assembly for fixing cultured leaf vegetable, and the planning trough assembly is internally provided with a solution storage cavity in which a nutrient solution flows. The system further comprises (1) a nutrient solution conveying circulation unit which is communicated with the solution storage cavity in the planting trough assembly to form a circulating loop, (2) a control unit which is electrically connected with the nutrient solution conveying circulation unit and (3) a plant growth light which is connected with the control unit electrically and controlled by the control unit. The system can be used for creating an intelligent system for controlling nutrient supply and automatically supplying or supplementing illumination, can manage the nutrient supply and illumination of the leaf vegetable only through a control center and is high in automation degree, so that the leaf vegetable can grow in an environment with sufficient nutrients; and the leaf vegetable planting system based on soilless culture can be used for greatly shortening the growth time, improving the culture efficiency and achieving large leaf vegetable yield compared with a natural environment and other open type artificial soilless culture environments.

Methods of growing a multilayer graphene film (10) include flowing a weak oxidizing vapor (OV) and a gaseous carbon source (CS) over a surface (SGC) of a carbonizing catalyst (GC) in a CVD reaction chamber (2). Carbon atoms (C) deposit on the carbonizing catalyst surface to form sheets of single-layer graphene (12) upon cooling. The method generates a substantially uniform stacking of graphene layers to form the multilayer graphene film. The multilayer graphene film is substantially uniform and has a relatively large scale as compared to graphene films formed by prior-art methods.