An InGaN-based blue-green light-emitting diode epitaxial structure and growth method

A technology of light-emitting diodes and epitaxial structures, applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as mismatch and large lattice, and achieve the effect of reducing manufacturing costs
CN104409587AActive Publication Date: 2015-03-11TAIYUAN UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TAIYUAN UNIV OF TECH
Publication Date
2015-03-11

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Abstract

The invention provides an InGaN-based blue-green light-emitting diode epitaxial growth method and a structure thereof, wherein the growth method of the epitaxial structure comprises specifically the following steps: performing a high temperature annealing process on a sapphire substrate in an ammonia atmosphere, reducing the temperature to 530-580 degrees and adjusting epitaxial growth atmosphere to grow a low temperature InGaN nucleation layer, and then raising the temperature and sequentially growing an InGan unintentionally doped layer, an n-type InGaN layer, an InyGa1-yN / InxGa1-xN(y> x) multi-quantum well active layer, A p-AlInGaN electron blocking layer, A p-type InGaN layer and the p++ type InGaN contact layer. The InGaN-based blue-green LED epitaxial structure provided in the present invention can effectively reduce the piezoelectric polarization field in an active area to thereby improve light emitting efficiency since the structure reduces lattice mismatch between a quantum well material and a matrix material.
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Description

Technical field

[0001] The invention relates to an InGaN-based blue-green light emitting diode epitaxial structure and growth method, belonging to the field of optoelectronic materials and devices. Background technique

[0002] GaN-based high-brightness blue, green and white light-emitting diodes (LEDs) are widely used in many fields such as display and lighting due to their low energy consumption, long life, no pollution, and strong resistance to harsh environments.

[0003] For traditional GaN-based blue-green LEDs, the basic structure of the active region is InGaN / GaN multiple quantum wells. Although GaN-based semiconductor materials and devices have achieved great development, there are still many scientific and technical problems to be solved. First, the question of the quantum confinement Stark effect in InGaN / GaN quantum wells. Since the lattice constant of InGaN is greater than that of GaN, in the InGaN / GaN quantum well grown along the

[0001] direction, there is a gap bet...

Claims

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