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118results about How to "Increased luminosity" patented technology

Light-emitting diode (LED) epitaxial structure and manufacturing method thereof

The invention discloses a light-emitting diode (LED) epitaxial structure and a manufacturing method thereof. The LED epitaxial structure successively comprises an epitaxial substrate, a leukotriene (LT)-GaN nucleating layer, a high-temperature non-doped buffer layer, a P-GaN layer, a P-AlGaN layer, a diffusion barrier layer, a multiple quantum well (MQW) luminous layer, an InGaN current expansion layer, an N-ZnO layer and a surface-coarsened ZnO layer. The manufacturing method comprises the following steps: pre-treating the epitaxial substrate; growing the nucleating layer; growing the buffer layer; growing the P-GaN layer; growing the P-AlGaN layer; growing the diffusion barrier layer; growing the MQW luminous layer; growing the InGaN current expansion layer; growing the N-ZnO layer; and growing the surface-coarsened ZnO layer. By using the LED epitaxial structure obtained by virtue of the manufacturing method provided by the invention, an excellent electrical property and a good optical property are obtained, the internal quantum efficiency and the electronic static discharge (ESD) resistance capability are improved, the lost light caused by total reflection is lowered, the external quantum efficiency is greatly improved, a high-brightness LED is obtained, and the purposes of development and sustainable development of the LED industry are greatly promoted.
Owner:中山大学佛山研究院 +1

Lead-free piezoelectric potassium sodium niobate optoelectronic multifunctional material and preparation method thereof

InactiveCN103787658AExcellent piezoelectric ferroelectric propertiesExcellent luminous propertiesRare-earth elementFluorescence
The invention relates to a lead-free piezoelectric potassium sodium niobate optoelectronic multifunctional material and a preparation method thereof and belongs to the technical field of luminescent materials. According to the invention, the fluorescence property and the piezoelectric property of a lead-free piezoelectric potassium sodium niobate material are remarkably increased by utilizing the synergistic combination effect between rare earth ion and metal ion. The multifunctional material disclosed by the invention comprises the following components in percentage by mass: (K0.5Na0.5) (1-y-x) MyLnxNb (1-y) TiyO3, wherein the Ln is selected from at least one of Sm, Pr and Eu; M is one or more than one ion in metal elements Ca, Sr and Ba; x is greater than 0 and less than or equal to 0.05; y is greater than 0 and less than or equal to 0.2. The multifunctional material disclosed by the invention is formed by mixing a certain amount of rare earth element into (K0.5Na0.5) NbO3 (KNN) host material with a perovskite structure; in the meantime, a ferroelectric material MTiO3(M is Ca, Sr and Ba) with the same structure is added to form a solid solution together with the KNN to ensure that the material has excellent luminescence property; therefore, the multifunctional material has a blue light-excited photoluminescence characteristic and has the piezoelectric property and the ferroelectric property per se at the same time and has potential application prospect in the field of optoelectronic integration devices.
Owner:INNER MONGOLIA UNIV OF SCI & TECH

Light-emitting film used for LED lighting and provided with micro-mirror structure and preparing method thereof

The invention discloses a light-emitting film used for LED lighting and provided with a micro-mirror structure and a preparing method of the light-emitting film and relates to the technical field of LED lighting and displaying. Binding agents, anti-setting agents, dispersing agents, antifoaming agents and fluorescent powder are processed in a vacuum defoamation mode to prepare fluorescent sizing agents; a screen mesh technology is adopted for printing the fluorescent sizing agents on a substrate, and a fluorescent powder coating is prepared; an impressing technology is adopted for preparing micro-mirror patterns on an optical polymer film material to prepare a micro-mirror structure film; finally, the micro-mirror structure film and the fluorescent powder coating are stuck together to prepare the light-emitting film used for LED lighting and provided with the micro-mirror structure. The prepared fluorescent powder coating is prepared, the technology is simple, and the thickness, the pattern shape and the fluorescent powder content of a film layer are easily controlled. According to the light-emitting film, the service life of a whole LED lamp is effectively prolonged, and the LED lamp has the more stable light-emitting performance.
Owner:YANCHENG INST OF TECH

Low temperature preparation method of yttrium aluminum garnet rare earth phosphor powder

The invention relates to a low temperature preparation method of yttrium aluminum garnet rare earth phosphor powder. The rare earth phosphor powder is formed by material expressed by a general formula Y3-xMxAl5-yGayO12, wherein M is Ce or Tb or Ce and Gd, x is molar number of M and is more than or equal to 0.01 and less than or equal to 0.08, y is molar number of Ga and is more than or equal to 0 and less than or equal to 0.8, and the preparation method thereof comprises pretreatment of raw materials, mixing, sintering and the like. The raw material is easy to be evenly mixed and sintering temperature is low during preparation in the invention. The prepared phosphor powder has high brightness, spherical or near spherical shape, controllable powder particle size, even powder particle surface and good luminous performance through test; and the wavelength of emitting light thereof is not changed so as to greatly improve screen coating effect and luminous performance of devices when being applied to different devices, thus being applicable to field emission displays, projection televisions and LED devices, flying-spot scanning displays and the fields with high requirement on screen coating effect, luminous brightness and luminous efficiency of the phosphor powder.
Owner:SHAANXI NORMAL UNIV

Europium and samarium-doped lithium magnesium phosphate photostimulated luminescent material and preparation method thereof

InactiveCN103194230AImproving photostimulated luminescent propertiesImprove thermoluminescence performanceLuminescent compositionsThermoluminescenceSpace group
The invention relates to a europium and samarium-doped lithium magnesium phosphate photostimulated luminescent material and a preparation method thereof. The chemical formula of the material is LiMgPO4: Eu, Sm, B, and the specific preparation method comprises the following steps of: mixing and grinding raw materials, namely lithium hydroxide, magnesium nitrate, ammonium dihydrogen phosphate, boric oxide, europium oxide and samarium oxide, loading into a porcelain crucible made of an aluminum oxide material, placing into a high-temperature sintering furnace for performing sectional constant-temperature sintering, and further cooling the aluminum oxide crucible to room temperature to obtain the europium and samarium-doped lithium magnesium phosphate LiMgPO4: Eu, Sm, B photostimulated luminescent material. The material is of an olivine type structure, the space group is Pnma, the lattice constants are as follows: a=10.147., b=5.909. and c=4.692., and the doping of europium and samarium does not change the basic structure of the LiMgPO4 material; and the thermoluminescence performance of the material is greatly upgraded, the sensitivity and the stability in storage of radiation dose information are effectively improved, the addition of the samarium oxide upgrades the luminescence performance of rare earth europium ions, and the material has low environmental pollution and low cost and can be applied to environments, medicines and offline and real-time online measurement of human body radiation doses.
Owner:XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI

High-luminous decay resistance nitride and nitrogen oxide fluorescent materials and preparation method thereof

The invention provides high-luminous decay resistance nitride and nitrogen oxide fluorescent materials and a preparation method thereof. The high-luminous decay resistance nitride and nitrogen oxide fluorescent material has a general formula of M1aM2bOxNy-zCz: alpha Re, beta R. gamma A. The nitride or nitrogen oxide fluorescent material is a composite structure comprising a nitride or nitrogen oxide fluorescent phase and inert metal particles existing in the nitride or nitrogen oxide fluorescent phase, the lattice structure of the nitride or nitrogen oxide fluorescent phase has Si-C bonds replacing a part of Si-N bonds, the inert metal particles in the composite structure can obviously improve fluorescent phase luminescence performances, and the Si-C bonds with higher rigidity in the fluorescent phase replaces a part of Si-N bonds so that rigidity of the fluorescent phase lattice structure is improved and luminous decay resistance of the fluorescent phase is obviously improved. The nitride or nitrogen oxide fluorescent material is prepared by a high-temperature solid phase reaction method improved by silicon carbide reinforcement and inert metal particle addition, and the nitride or nitrogen oxide fluorescent material can emit lights from blue lights to red lights after UV-blue and green light excitation and can be used in manufacture of a LED device.
Owner:HANGZHOU YINGHE PHOTOELECTRONICS MATERIALS

Cr<3+> and Bi<3+> double-doped gallate long-afterglow fluorescent powder material as well as preparation method and application thereof

The invention relates to a Cr<3+> and Bi<3+> double-doped gallate long-afterglow fluorescent powder material and a preparation method thereof. The method comprises the following steps: dissolving nitrates of zinc, gallium, chromium and bismuth in water according to a stoichiometric ratio, adding tert-butylamine to adjust the pH value of the solution to be alkaline, adding oleic acid and toluene tocarry out a hydrothermal reaction, and carrying out solid-liquid separation. The chemical formula of the fluorescent powder material prepared by the method is Zn0.97Ga(2-x-y) O3.97: xCr<3+>, yBi<3+>,x is greater than or equal to 0.01 and less than or equal to 0.02, y is greater than or equal to 0.01 and less than or equal to 0.03, the average particle size of the fluorescent powder material is about 8nm, and the fluorescent powder material is spherical-like particles. The absorption band strength of the double-doped fluorescent powder material at the positions of 350 nm, 350-470 nm and 470-650 nm in a diffuse reflection spectrum is obviously enhanced, the double-doped fluorescent powder material can be effectively excited by red light with higher biological tissue penetrating capacity, in-vivo charging can be carried out, imaging can be carried out at any time, and the double-doped fluorescent powder material can be used as a probe to be applied to the field of biomedical imaging.
Owner:WUHAN INSTITUTE OF TECHNOLOGY

Alternating-current driving type quantum dot light-emitting diode and preparation method thereof

The invention discloses an alternating-current driving type quantum dot light emitting diode and a preparation method thereof. The alternating-current driving type quantum dot light emitting diode comprises an anode substrate, a dielectric layer, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a metal cathode layer which are sequentially arranged in a stacked mode; the quantum dot light-emitting layer is a blended film prepared from a quantum dot solution and an organic insulating polymer solution. By introducing the dielectric layer, carriers from electrodes are effectively blocked and stored, and charges injected into the device are regulated and controlled along with frequency conversion of alternating voltage, so thatthe device can normally work under the driving of the alternating voltage without adding an alternating current-direct current conversion device; by introducing the organic insulating polymer into thequantum dot light-emitting layer, defects on the surfaces of quantum dots are passivated, so that the carrier transport density is remarkably improved, electrons and holes are compounded more sufficiently, and the light-emitting performance of the light-emitting diode is remarkably improved.
Owner:JIANGHAN UNIVERSITY
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