120results about How to "Increased luminosity" patented technology

The invention provides an InGaN-based blue-green light-emitting diode epitaxial growth method and a structure thereof, wherein the growth method of the epitaxial structure comprises specifically the following steps: performing a high temperature annealing process on a sapphire substrate in an ammonia atmosphere, reducing the temperature to 530-580 degrees and adjusting epitaxial growth atmosphere to grow a low temperature InGaN nucleation layer, and then raising the temperature and sequentially growing an InGan unintentionally doped layer, an n-type InGaN layer, an InyGa1-yN / InxGa1-xN(y> x) multi-quantum well active layer, A p-AlInGaN electron blocking layer, A p-type InGaN layer and the p++ type InGaN contact layer. The InGaN-based blue-green LED epitaxial structure provided in the present invention can effectively reduce the piezoelectric polarization field in an active area to thereby improve light emitting efficiency since the structure reduces lattice mismatch between a quantum well material and a matrix material.

The invention discloses a light-emitting diode (LED) epitaxial structure and a manufacturing method thereof. The LED epitaxial structure successively comprises an epitaxial substrate, a leukotriene (LT)-GaN nucleating layer, a high-temperature non-doped buffer layer, a P-GaN layer, a P-AlGaN layer, a diffusion barrier layer, a multiple quantum well (MQW) luminous layer, an InGaN current expansion layer, an N-ZnO layer and a surface-coarsened ZnO layer. The manufacturing method comprises the following steps: pre-treating the epitaxial substrate; growing the nucleating layer; growing the buffer layer; growing the P-GaN layer; growing the P-AlGaN layer; growing the diffusion barrier layer; growing the MQW luminous layer; growing the InGaN current expansion layer; growing the N-ZnO layer; and growing the surface-coarsened ZnO layer. By using the LED epitaxial structure obtained by virtue of the manufacturing method provided by the invention, an excellent electrical property and a good optical property are obtained, the internal quantum efficiency and the electronic static discharge (ESD) resistance capability are improved, the lost light caused by total reflection is lowered, the external quantum efficiency is greatly improved, a high-brightness LED is obtained, and the purposes of development and sustainable development of the LED industry are greatly promoted.

A nano-class composite luminescent material for effectively converting the ultraviolet light to red fluorescence light is prepared from polymer (100 wt portions), clay (0.5-30), RE-organosilicon as optical converting agent (0.5-10), dispersing medium (20-400), cross-linking agent (0-10) and promoter (0-1) through the reaction between nitrate or hydrochloride of Eu or Tb, organic carboxylic acid and organosilicon surfactant for 3-6 hr, the reaction between organosilicon-type optical converting agent, clay and dispersing medium to obtain organic clay compound, dispersing in polymer, stirring, adding cross-linking agent and promoter, and moulding for 0.2-24 hr.

The invention belongs to the technical field of organic photo-functional materials. A photonic crystal assembled by fluorescent microspheres obtained after three-primary-color quantum dots are embedded into particles is characterized by being assembled by the mono-dispersed fluorescent microspheres through a self-assembly method, wherein the fluorescent microspheres comprise mono-dispersed particle kernels and shells which are made of silicon dioxide materials and have uniform thickness, a layer of quantum dots are evenly dispersed on the outer surfaces of the particles through the static effect, the layer of quantum dots are formed by mixing red quantum dots, green quantum dots and blue quantum dots in proportion, and the photonic crystal can be applied to white light emitting diodes.

The invention discloses a white light source containing three-band-gap photonic crystals and a preparation method for the white light source, belongs to the technical fields of light emission and illumination, relates to the application technology of photonic crystals, and particularly relates to a preparation method for improving the luminous intensity and stability of the white light source based on the three-photonic-band-gap characteristics of the three-band-gap photonic crystals and a coating technology. According to the preparation method, mono-dispersion red, green and blue three-fundamental-color fluorescent granules are prepared separately through the coating technology; then the solid-state luminous thin films of the three-band-gap photonic crystals are established by an automatic-assembling method in a layer-by-layer assembling manner; and next, the thin films are combined with an ultraviolet LED to prepare the white light source with the excellent luminescence property.

The invention relates to a lead-free piezoelectric potassium sodium niobate optoelectronic multifunctional material and a preparation method thereof and belongs to the technical field of luminescent materials. According to the invention, the fluorescence property and the piezoelectric property of a lead-free piezoelectric potassium sodium niobate material are remarkably increased by utilizing the synergistic combination effect between rare earth ion and metal ion. The multifunctional material disclosed by the invention comprises the following components in percentage by mass: (K0.5Na0.5) (1-y-x) MyLnxNb (1-y) TiyO3, wherein the Ln is selected from at least one of Sm, Pr and Eu; M is one or more than one ion in metal elements Ca, Sr and Ba; x is greater than 0 and less than or equal to 0.05; y is greater than 0 and less than or equal to 0.2. The multifunctional material disclosed by the invention is formed by mixing a certain amount of rare earth element into (K0.5Na0.5) NbO3 (KNN) host material with a perovskite structure; in the meantime, a ferroelectric material MTiO3(M is Ca, Sr and Ba) with the same structure is added to form a solid solution together with the KNN to ensure that the material has excellent luminescence property; therefore, the multifunctional material has a blue light-excited photoluminescence characteristic and has the piezoelectric property and the ferroelectric property per se at the same time and has potential application prospect in the field of optoelectronic integration devices.

The invention discloses a light-emitting film used for LED lighting and provided with a micro-mirror structure and a preparing method of the light-emitting film and relates to the technical field of LED lighting and displaying. Binding agents, anti-setting agents, dispersing agents, antifoaming agents and fluorescent powder are processed in a vacuum defoamation mode to prepare fluorescent sizing agents; a screen mesh technology is adopted for printing the fluorescent sizing agents on a substrate, and a fluorescent powder coating is prepared; an impressing technology is adopted for preparing micro-mirror patterns on an optical polymer film material to prepare a micro-mirror structure film; finally, the micro-mirror structure film and the fluorescent powder coating are stuck together to prepare the light-emitting film used for LED lighting and provided with the micro-mirror structure. The prepared fluorescent powder coating is prepared, the technology is simple, and the thickness, the pattern shape and the fluorescent powder content of a film layer are easily controlled. According to the light-emitting film, the service life of a whole LED lamp is effectively prolonged, and the LED lamp has the more stable light-emitting performance.

The invention relates to a low temperature preparation method of yttrium aluminum garnet rare earth phosphor powder. The rare earth phosphor powder is formed by material expressed by a general formula Y3-xMxAl5-yGayO12, wherein M is Ce or Tb or Ce and Gd, x is molar number of M and is more than or equal to 0.01 and less than or equal to 0.08, y is molar number of Ga and is more than or equal to 0 and less than or equal to 0.8, and the preparation method thereof comprises pretreatment of raw materials, mixing, sintering and the like. The raw material is easy to be evenly mixed and sintering temperature is low during preparation in the invention. The prepared phosphor powder has high brightness, spherical or near spherical shape, controllable powder particle size, even powder particle surface and good luminous performance through test; and the wavelength of emitting light thereof is not changed so as to greatly improve screen coating effect and luminous performance of devices when being applied to different devices, thus being applicable to field emission displays, projection televisions and LED devices, flying-spot scanning displays and the fields with high requirement on screen coating effect, luminous brightness and luminous efficiency of the phosphor powder.

The invention relates to a europium and samarium-doped lithium magnesium phosphate photostimulated luminescent material and a preparation method thereof. The chemical formula of the material is LiMgPO4: Eu, Sm, B, and the specific preparation method comprises the following steps of: mixing and grinding raw materials, namely lithium hydroxide, magnesium nitrate, ammonium dihydrogen phosphate, boric oxide, europium oxide and samarium oxide, loading into a porcelain crucible made of an aluminum oxide material, placing into a high-temperature sintering furnace for performing sectional constant-temperature sintering, and further cooling the aluminum oxide crucible to room temperature to obtain the europium and samarium-doped lithium magnesium phosphate LiMgPO4: Eu, Sm, B photostimulated luminescent material. The material is of an olivine type structure, the space group is Pnma, the lattice constants are as follows: a=10.147., b=5.909. and c=4.692., and the doping of europium and samarium does not change the basic structure of the LiMgPO4 material; and the thermoluminescence performance of the material is greatly upgraded, the sensitivity and the stability in storage of radiation dose information are effectively improved, the addition of the samarium oxide upgrades the luminescence performance of rare earth europium ions, and the material has low environmental pollution and low cost and can be applied to environments, medicines and offline and real-time online measurement of human body radiation doses.

The invention relates to a novel divalent europium doped nitrogenous silicate solid solution base luminescent material and a self reduction preparation method. The chemical composition of the luminescent material is shown as follows: Ca3Si3 (O9-xNx):Eu<2+>. The preparation method comprises two steps of (1) preparing a Ca2SiO4:Eu<3+> product through a sol-gel method; (2) roasting the Ca2SiO4:Eu<3+> product and a silicon nitride mixture in a non reducing atmosphere, thus obtaining the final product by the self reducing action of the Si3N4, wherein the used materials comprise calcium nitrate (CaN2O6.4H2O), europium nitrate (EuN3O9.6H2O), ethyl orthosilicate (C8H20O4Si), and Si3N4. The luminescent material has broad band (300-450nm) to absorb near ultraviolet and blue light and gives out yellow green light (534-544nm). The obtained product has high light intensity and has stable properties. The preparation process can be finished only in protection atmosphere of nitrogen and needs no other reduction atmosphere and other reduction methods, so that the preparation method is simple and safe.

The invention discloses a novel garnet-structure multiphase fluorescent material and a preparation method thereof. The novel garnet-structure multiphase fluorescent material has a chemical formula of AaM1bM2cM3dO12-delta N delta: xRe, yR. zT. The novel garnet-structure multiphase fluorescent material has a multiphase structure comprising a rare earth ion-activated garnet structure fluorescent solid solution phase and inert metal particles such as one or more of Au, Ag, Pt and Pd, and the fluorescent phase contains nitrogen replacing a part of oxygen and halogen ions replacing a part of oxygen Through low-phonon energy inert metal particles in the multiphase structure, luminescence performances of the garnet-structure fluorescent solid solution phase are obviously improved. The multiphase fluorescent material can produce a luminescence spectrum with one or more peaks after UV-blue and green light excitation, can emit lights from blue lights to orange red lights and can be used in LED device manufacture.

The invention provides high-luminous decay resistance nitride and nitrogen oxide fluorescent materials and a preparation method thereof. The high-luminous decay resistance nitride and nitrogen oxide fluorescent material has a general formula of M1aM2bOxNy-zCz: alpha Re, beta R. gamma A. The nitride or nitrogen oxide fluorescent material is a composite structure comprising a nitride or nitrogen oxide fluorescent phase and inert metal particles existing in the nitride or nitrogen oxide fluorescent phase, the lattice structure of the nitride or nitrogen oxide fluorescent phase has Si-C bonds replacing a part of Si-N bonds, the inert metal particles in the composite structure can obviously improve fluorescent phase luminescence performances, and the Si-C bonds with higher rigidity in the fluorescent phase replaces a part of Si-N bonds so that rigidity of the fluorescent phase lattice structure is improved and luminous decay resistance of the fluorescent phase is obviously improved. The nitride or nitrogen oxide fluorescent material is prepared by a high-temperature solid phase reaction method improved by silicon carbide reinforcement and inert metal particle addition, and the nitride or nitrogen oxide fluorescent material can emit lights from blue lights to red lights after UV-blue and green light excitation and can be used in manufacture of a LED device.

The invention relates to BiPO4: Eu<3+> fluorescent powder synthesized with the help of a surfactant CTAB (Cetyltrimethyl Ammonium Bromide) and a method for synthesizing the BiPO4: Eu<3+> fluorescent powder. The method comprises the following steps: firstly, mixing Bi(NO3)3 and Eu(NO3) solutions and adding a mixed solution into a nitric acid solution; stirring uniformly and then dropwise adding a CTAB solution; stirring and reacting to generate BixEu1-xNO3; then dropwise adding an NH4H2PO4 solution, and continually stirring until the NH4H2PO4 solution is sufficiently dissolved; adjusting the pH (Potential of Hydrogen) value of the mixed solution to 0.5 to 0.6; reacting at 160 DEG C to 165 DEG C to generate sediment; when the sediment is not increased, naturally cooling to room temperature; centrifuging and separating the obtained sediment, washing and drying, thus finally obtaining the BiPO4: Eu<3+> fluorescent powder synthesized with the help of the surfactant CTAB. By adjusting the adding amount of the CTAB and controlling the shape and structure of a product, the prepared BiPO4: Eu<3+> fluorescent powder has high crystallization degree and high luminous intensity.

The invention relates to a Cr<3+> and Bi<3+> double-doped gallate long-afterglow fluorescent powder material and a preparation method thereof. The method comprises the following steps: dissolving nitrates of zinc, gallium, chromium and bismuth in water according to a stoichiometric ratio, adding tert-butylamine to adjust the pH value of the solution to be alkaline, adding oleic acid and toluene tocarry out a hydrothermal reaction, and carrying out solid-liquid separation. The chemical formula of the fluorescent powder material prepared by the method is Zn0.97Ga(2-x-y) O3.97: xCr<3+>, yBi<3+>,x is greater than or equal to 0.01 and less than or equal to 0.02, y is greater than or equal to 0.01 and less than or equal to 0.03, the average particle size of the fluorescent powder material is about 8nm, and the fluorescent powder material is spherical-like particles. The absorption band strength of the double-doped fluorescent powder material at the positions of 350 nm, 350-470 nm and 470-650 nm in a diffuse reflection spectrum is obviously enhanced, the double-doped fluorescent powder material can be effectively excited by red light with higher biological tissue penetrating capacity, in-vivo charging can be carried out, imaging can be carried out at any time, and the double-doped fluorescent powder material can be used as a probe to be applied to the field of biomedical imaging.

The invention provides a preparation method of a luminous composite for a sole material. The preparation method roughly includes following steps: (1), using zirconium nitrate, barium nitrate, lanthanum nitrate and butyl titanate to prepare composite luminous powder through a hydrothermal method; (2), modifying the composite luminous powder obtained in the step (1) through a coupling agent KH560 to obtain modified composite luminous powder, and enabling the modified composite luminous powder to react with hydrogen-containing polysiloxane, dibutyltin dilaurate and a coupling agent A151 to obtain polysiloxane grafted composite luminous powder; (3), adding, by weight, 60-70 parts of matrix, 1-2 parts of lubricant, 1.5-2 parts of stabilizer, 3-4 parts of compatilizer, 2-3 parts of flowing promoter and 10-14 parts of the polysiloxane grafted composite luminous powder into a high mixer to obtain a mixture; (4), adding the mixture into a double-screw extruder for melt extrusion to obtain the luminous composite for the sole material. The sole material prepared by the method has high luminosity and can be used for luminous shoes.

The invention provides a group of composite fluorescent materials and a preparation method thereof. A fluorescent complex is composed of a fluorescence main phase and a second phase, wherein the fluorescence main phase takes oxygen as a main anionic ligand and rare earth as activated ions, and the second phase is inert elemental metal including Au, Ag, Pd, Pt, Rh, Ir, Ru, Os and the like. Low phonon energy inert elemental metals are distributed in main phase domain or on domain boundary of the fluorescence main phase domain structure in the form of a second phase micro-domain, so that the light intensity and the anti-heat damping capacity of the fluorescence main phase is improved. Part of oxygen in the complex fluorescent main phase lattice can be replaced by trivalent nitrogen ions and monovalent halogen ions together to adjust the micro crystal field environment in the lattice to achieve fine adjustment of the emission wavelength. The composite fluorescent material is prepared by a solid phase reaction process using the microparticles of the inert elemental metals as a seed crystal, can be excited by UV-blue-green light to obtain emission from blue to orange light, and can be applied to manufacturing efficient LED devices.

The invention discloses a manufacturing method for a polymer light-emitting diode including an electron transfer layer. The method is simple in preparation technology, low in cost and high in luminous efficiency of the produced light-emitting diode. The manufacturing method for polymer light-emitting diode comprises includes preparation of a substrate, an anode, a hole transport layer, a polymer light-emitting layer, an electron transfer layer and a cathode in sequence. The light-emitting diode adopts the polymer light-emitting layer as a high-efficiency luminescence polymer so that the luminescence property of the light-emitting diode is greatly improved. Meanwhile, the manufacturing method for polymer light-emitting diode has the advantages of being simple in preparation technology, low in cost, and is suitable for the preparation of a cathode of a flexible display.

The present invention relates to a novel compound and an organic electroluminescent device comprising the same. The compound according to the present invention is used for an organic layer, preferablya luminous layer, of an organic electroluminescent device, thereby improving the luminous efficiency, driving voltage, lifetime, etc. of the organic electroluminescent device.

The present invention relates to a novel compound and an organic electroluminescent device comprising the same. The compound according to the present invention is employed in an organic layer of an organic electroluminescent device, preferably in a light-emitting layer, an emission auxiliary layer, an electron transport auxiliary layer or an electron transport layer, thus improving the emission efficiency, driving voltage, lifespan, etc. in the organic electroluminescent device.

The invention relates to up-conversion red luminescent powder and a preparation method thereof. The concrete chemical formula of the up-conversion red luminescent powder is ZrCa0.06YbyErzO2.06 plus 1.5 (y plus z). By calcium ion doping, a precursor is obtained by utilizing a liquid phase coprecipitation method, the precursor is subjected to high-temperature calcination at 1,100 DEG C and ball-milling treatment so as to obtain stable up-conversion red luminescent powder of tetragonal phase rare earth doping zirconium oxide. The luminescent powder is characterized by being high in illumination brightness, small in grain size and good in chemical and mechanical stability, has a great practical value in the infrared anti-counterfeiting field, and further has a potential application value in the up-conversion bioluminescence labeling aspect.

The present invention relates to a novel compound and an organic electroluminescent device comprising the same. A compound according to the present invention is used for an organic layer, preferably alight emitting layer, of an organic electroluminescent device, and thus can improve luminous efficiency, driving voltage, and lifespan of the organic electroluminescent device.

The invention belongs to the field of luminescent materials and discloses a Yttrium Terbium silicate luminescent material and a preparation method thereof. The Yttrium Terbium silicate luminescent material has the general formula as follows: Y(2-x)SiO5Tb[x]M, wherein M is at least one selected from the group consisting of Ag particle, Au particle, Pt particle and Pd particle, and x is more than 0but equal to or less than 0.5. The yttrium Terbium silicate luminescent material has a simple process and no strict requirements for equipment. The luminescent property of the luminescent material isgreatly improved by doping metal particles as compared to before doping metal particles.

The invention discloses a low-temperature synthesis method of molybdate fluorescent powder. The low-temperature synthesis method comprises the following steps: adopting a high-temperature solid-phase method and accurately weighing SrCO3, H2MoO4 and Eu2O3 as starting raw materials according to a stoichiometric ratio; selectively adding a certain amount of NH4F, NaF, H3BO3, BaF2, NH4Cl, Li2CO3, Na2CO3 and K2CO3; calcining in a muffle furnace to obtain the molybdate fluorescent powder. Optimized substance ratio and preparation conditions are obtained through carrying out phase analysis, researching luminous properties and specifically analyzing an energy transfer mechanism, cooling effect of a fluxing agent, influences on the luminous properties, influences, caused by a charge compensating agent, on the luminous properties of the fluorescent powder, and color coordinates. By adopting the method provided by the invention, the energy consumption is reduced and the luminous properties of a product are improved.

The invention discloses an alternating-current driving type quantum dot light emitting diode and a preparation method thereof. The alternating-current driving type quantum dot light emitting diode comprises an anode substrate, a dielectric layer, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a metal cathode layer which are sequentially arranged in a stacked mode; the quantum dot light-emitting layer is a blended film prepared from a quantum dot solution and an organic insulating polymer solution. By introducing the dielectric layer, carriers from electrodes are effectively blocked and stored, and charges injected into the device are regulated and controlled along with frequency conversion of alternating voltage, so thatthe device can normally work under the driving of the alternating voltage without adding an alternating current-direct current conversion device; by introducing the organic insulating polymer into thequantum dot light-emitting layer, defects on the surfaces of quantum dots are passivated, so that the carrier transport density is remarkably improved, electrons and holes are compounded more sufficiently, and the light-emitting performance of the light-emitting diode is remarkably improved.