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68results about How to "Limit escape" patented technology

Air purifier

InactiveCN103822305ALimit pass-throughLimited jumpCombination devicesLighting and heating apparatusFiberAir purifiers
The invention relates to the technical field of air purification, in particular to an air purifier, which comprises an air passage, wherein a fan is arranged in the air passage, the interior of the air passage is sequentially provided with a filtering net, an ionizing and polarizing assembly, an electromagnetic deflection assembly, an adsorbing assembly and an ultraviolet light disinfection assembly along the air flow direction, the filtering net sequentially comprises a metal filtering net layer and a fiber filtering net layer along the air flow direction, the ionizing and polarizing assembly comprises an ionizing pole plate on the axis of the air passage, the ionizing pole plate is provided with a plurality of barbed poles, the electromagnetic deflection assembly comprises an excitation deflection coil, the adsorbing assembly comprises the grounded air passage body or an adsorbing layer, the adsorbing layer is grounded and is attached to the inner wall of the air passage, and the ultraviolet light assembly comprises a plurality of ultraviolet light pipes. The air purifier has the advantages that the direct passing, jumping and escape of particles in the air are limited, the adsorbing effect is improved, and the purifying efficiency is improved; the air purifier is favorable for the gaseous particles with maximum particle size smaller than or equal to 10 micrometers, namely PM10, and is especially suitable for the particles with maximum particle size smaller than or equal to 2.5 micrometers, namely PM2.5.
Owner:王琥 +3

Light-emitting diode (LED) epitaxial structure and manufacturing method thereof

The invention discloses a light-emitting diode (LED) epitaxial structure and a manufacturing method thereof. The LED epitaxial structure successively comprises an epitaxial substrate, a leukotriene (LT)-GaN nucleating layer, a high-temperature non-doped buffer layer, a P-GaN layer, a P-AlGaN layer, a diffusion barrier layer, a multiple quantum well (MQW) luminous layer, an InGaN current expansion layer, an N-ZnO layer and a surface-coarsened ZnO layer. The manufacturing method comprises the following steps: pre-treating the epitaxial substrate; growing the nucleating layer; growing the buffer layer; growing the P-GaN layer; growing the P-AlGaN layer; growing the diffusion barrier layer; growing the MQW luminous layer; growing the InGaN current expansion layer; growing the N-ZnO layer; and growing the surface-coarsened ZnO layer. By using the LED epitaxial structure obtained by virtue of the manufacturing method provided by the invention, an excellent electrical property and a good optical property are obtained, the internal quantum efficiency and the electronic static discharge (ESD) resistance capability are improved, the lost light caused by total reflection is lowered, the external quantum efficiency is greatly improved, a high-brightness LED is obtained, and the purposes of development and sustainable development of the LED industry are greatly promoted.
Owner:中山大学佛山研究院 +1
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