Light-emitting diode (LED) epitaxial structure and manufacturing method thereof

A technology of light-emitting diodes and epitaxial structures, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem that the performance and electrode structure of MQW and P-GaN materials are not enough to meet high-performance applications, and improve the ability to resist ESD, improve ESD level, the effect of avoiding ESD breakdown
CN102208503AInactive Publication Date: 2011-10-05中山大学佛山研究院 +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
中山大学佛山研究院
Publication Date
2011-10-05
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a light-emitting diode (LED) epitaxial structure and a manufacturing method thereof. The LED epitaxial structure successively comprises an epitaxial substrate, a leukotriene (LT)-GaN nucleating layer, a high-temperature non-doped buffer layer, a P-GaN layer, a P-AlGaN layer, a diffusion barrier layer, a multiple quantum well (MQW) luminous layer, an InGaN current expansion layer, an N-ZnO layer and a surface-coarsened ZnO layer. The manufacturing method comprises the following steps: pre-treating the epitaxial substrate; growing the nucleating layer; growing the buffer layer; growing the P-GaN layer; growing the P-AlGaN layer; growing the diffusion barrier layer; growing the MQW luminous layer; growing the InGaN current expansion layer; growing the N-ZnO layer; and growing the surface-coarsened ZnO layer. By using the LED epitaxial structure obtained by virtue of the manufacturing method provided by the invention, an excellent electrical property and a good optical property are obtained, the internal quantum efficiency and the electronic static discharge (ESD) resistance capability are improved, the lost light caused by total reflection is lowered, the external quantum efficiency is greatly improved, a high-brightness LED is obtained, and the purposes of development and sustainable development of the LED industry are greatly promoted.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor light-emitting diodes, in particular to an epitaxial structure of a light-emitting diode and a manufacturing method thereof, in particular to an epitaxial structure of a light-emitting diode in which N-GaN is replaced by N-ZnO and a manufacturing method thereof. Background technique

[0002] Since the commercialization of GaN-LED (gallium nitride light-emitting diode) in the early 1990s, the application fields of LED products have rapidly expanded from signal indication, traffic lights, landscape lighting, automotive lighting, backlight sources to general lighting, etc. .

[0003] Although the structure development of GaN-LED is becoming more and more mature, compared with the maturity of AlGaInP series materials, the quality of GaN-LED P-type materials is only barely usable. plus its such as figure 1 The sequentially grown epitaxial structure (Substrate / N-GaN / (InGaN / GaN) MQW / P-GaN LED) an...

Claims

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