The invention discloses a process method for a front electrode of a schottky diode and an electrode structure of the front electrode structure. Besides the normal steps of extending, oxidizing, photoetching for the first time, injecting boron, annealing, photoetching for the second time, etching by using silicon dioxide, depositing a potential barrier, alloying the potential barrier and etching the potential barrier, the method also comprises the following steps of: washing, and evaporating metal Ti (titanium) or V (vanadium) on a contact layer, metal Ni (nickel) on a transitional layer, metal Al (aluminum) on a blocking layer, metal Ni (nickel) on the transitional layer, and metal Ag (argentum) on a conductive layer sequentially in vacuum so as to form a front electrode structure with the electrode metal Ag, Ni, Al, Ni, Ti or V. The invention has the advantages that: during welding or encapsulation, the damage to the silicon surface of an instrument can be reduced under the stress blocking action of Al; a welding pull force and the electro-static discharge resistance of the front electrode structure are improved remarkably.