LED chip and preparation method thereof
An LED chip, N-type technology, applied in electrical components, electro-solid devices, circuits, etc., can solve problems such as threats and damage to electronic components, and achieve the effect of improving reliability and enhancing ESD resistance.
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[0037] The present invention will be described in detail below in conjunction with specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to these embodiments are included in the protection scope of the present invention.
[0038] Such as figure 1 Shown is a schematic diagram of an LED chip according to an embodiment of the present invention.
[0039] The LED chip 100 includes a substrate 10 , and the substrate 10 includes a middle region 101 and an edge region 102 .
[0040] The middle region 101 sequentially includes a first N-type GaN layer 11a, a first MQW active layer 12a and a first P-type GaN layer 13a from bottom to top.
[0041] The edge region 102 sequentially includes a second N-type GaN layer 11b, a second MQW active layer 12b and a second P-type GaN layer 13b from bottom to top.
[0042] Wherein, the first...
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