A packaged
semiconductor device (200) with a substrate (220) having, sandwiched in an insulator (221), a flat sheet-like
sieve member (240) made of a non-linear material switching from insulator to conductor mode at a preset
voltage. Both member surfaces are free of indentations; the member is perforated by through-holes, which are grouped into a first set (241) and a second set (242).
Metal traces (251) over one member surface are positioned across the first set through-holes (241); each trace is connected to a terminal on the substrate top and, through the hole, to a terminal on the substrate bottom. Analogous for
metal traces (252) over the opposite member surface and second set through-holes (242). Traces (252) overlap with a portion of traces (252) to form the locations for the
conductivity switches, creating local ultra-
low resistance bypasses to ground for discharging overstress events.