13results about How to "Process compatible" patented technology

The invention provides a memory adapter plate for a radio frequency core particle integration system and a preparation method thereof, and the preparation method comprises the steps: providing a semiconductor substrate of which the edge part is provided with a plurality of grooves which are distributed at intervals, and forming a grounding layer; providing a plurality of radio frequency core particles, and correspondingly placing the plurality of radio frequency core particles in the plurality of grooves; a first rewiring layer is formed on the grounding layer, a second rewiring layer is formed on the first rewiring layer, the second rewiring layer comprises a non-wiring area and a wiring area surrounding the non-wiring area, and a conductive circuit layer of the second rewiring layer is arranged in the wiring area; forming a memristor switch matrix on the non-wiring area, wherein the memristor switch matrix comprises a plurality of input ends and a plurality of output ends; the memory adapter plate prepared by the preparation method of the memory adapter plate for the radio frequency core particle integration system meets the requirements of parasitic suppression, process compatibility and thickness reduction, and the radio frequency core particle integration system which is simple in structure, low in cost and low in power consumption is constructed.

The application provides an embedded flash memory structure and a manufacturing method thereof. The gate stack layer comprises a tunneling oxide layer, a floating gate layer, a gate dielectric layer and a control gate layer which are stacked in sequence. The floating gate layer comprises a plurality of mutually electrically isolated nano storage points. During programming, charges can be stored in the plurality of mutually electrically isolated nano storage points. When breakdown occurs in any nano storage point, the remaining undamaged nano storage points can still normally store charges due to the electric isolation between the nano storage points, so that the floating gate layer can maintain normal storage function, thereby improving the overall stability of the memory and increasing the service life of the memory. The application has six kinds of embedded flash memory cell structures. In particular, the tunneling oxide layer and the floating gate layer are arranged to protrude from both sides of the gate dielectric layer and the control gate layer, thereby greatly improving the programming speed of the embedded flash memory.

This invention relates to the field of photovoltaic technology, disclosing a photovoltaic backsheet, its preparation method, and a photovoltaic module. The photovoltaic backsheet sequentially comprises a weather-resistant outer layer, a barrier layer, and a functional inner layer. The functional inner layer includes an acidic substance adsorption and neutralization layer (located between the barrier layer and a humidity buffer layer) and a humidity buffer layer (whose upper surface contacts the lower encapsulation film of the photovoltaic module). The acidic substance adsorption and neutralization layer comprises a matrix (low-acid-value acrylic resin with an acid value ≤ 5 mg KOH / g) and alkaline nanoparticles dispersed in the matrix. The humidity buffer layer comprises a main resin and a controllable moisture-absorbing material dispersed in the main resin. The thickness ratio of the humidity buffer layer to the acidic substance neutralization layer is 1.5-2:1. Through the synergistic effect of each layer, this photovoltaic backsheet, by passively blocking moisture, actively adsorbing and neutralizing corrosion sources, and buffering humidity fluctuations, fundamentally alleviates the power degradation of the photovoltaic module caused by damp heat aging, further extending the service life of the photovoltaic module.

This invention discloses a broadband infrared polarizer based on a germanium substrate and its fabrication method, belonging to the field of infrared optical device technology. The polarizer comprises a germanium substrate, a buffer layer, an ultrathin metal thin film layer, a dielectric spacer layer, a two-dimensional material metal composite metasurface layer, and a dielectric protective layer, stacked sequentially. An infrared antireflection coating is provided on the surface of the germanium substrate. The ultrathin metal thin film layer serves as a transparent electrode, and the two-dimensional material metal composite metasurface layer contains a metal nanoantenna array and a two-dimensional material layer covering it. By precisely designing the thickness of the dielectric spacer layer, a resonance enhancement effect is formed in the infrared band, improving the polarization extinction ratio and operating bandwidth. This invention also provides a corresponding fabrication method with strong process compatibility, suitable for mass production. This polarizer exhibits high transmittance, wide-band operation, high extinction ratio, and electrical tuning capability in the 412-micron band, making it suitable for systems such as infrared imaging, spectral detection, and free-space optical communication.

This invention discloses a high-efficiency MVR decomposition and evaporation system for sodium bicarbonate production, replacing a wet decomposition tower. The system includes a buffer tank for receiving saline wastewater from a raw material tank; a preheater for receiving the saline wastewater from the buffer tank and initially raising its temperature; a heating chamber for receiving the preheated saline wastewater from the preheater; an evaporation chamber for flash evaporation of the heated brine to obtain a concentrated solution; a carbonization tower for receiving the concentrated solution from the evaporation chamber and CO2 gas supplied from another inlet for a carbonization reaction; an online monitoring module for real-time monitoring of scaling trends in the evaporation chamber; and a high-frequency electromagnetic pulse device for periodically flushing the evaporation chamber with high-frequency pulse waves, thereby periodically disturbing the solution to inhibit crystal growth. This high-efficiency decomposition and evaporation system offers advantages such as low energy consumption, environmental friendliness, small footprint, and high safety and reliability. It provides an alternative to the wet decomposition tower necessary in sodium bicarbonate production, reduces evaporation water volume, and offers a new technological approach.

The application discloses a III-nitride transistor structure capable of reducing leakage current and a manufacturing method thereof. The III-nitride transistor structure comprises a first heterojunction and a second heterojunction which are arranged in a stack mode, and the first heterojunction and the second heterojunction are electrically isolated by a high-resistance material and / or an insertion layer; a first electrode, a second electrode and a first gate electrode matched with the first heterojunction, a third semiconductor is arranged between the first gate electrode and the first heterojunction, and the first gate electrode is electrically connected with the first electrode; a source electrode, a drain electrode and a second gate electrode matched with the second heterojunction, the source electrode and the drain electrode are electrically connected with the first gate electrode and the second electrode respectively, and a sixth semiconductor is arranged between the second gate electrode and the second heterojunction. The III-nitride transistor structure provided by the application can effectively reduce the reverse conduction voltage of a device and reduce the area of the device.

The application provides a self-repairable EVA adhesive film and a preparation method thereof, and relates to the technical field of solar photovoltaic module packaging. The self-repairable EVA adhesive film realizes a double self-repairing mechanism of photovoltaic module packaging adhesive film through Diels-Alder reaction group grafting and silane coupling agent microencapsulation technology, and the double self-repairing mechanism includes physical rearrangement repair and chemical bonding repair. While maintaining high light transmittance (>= 90%) and bonding strength (>= 96 N / cm), the aging resistance (Delta YI <= 3) and service life of the EVA adhesive film are significantly improved, and the problems that the traditional EVA adhesive film is prone to aging and micro-damage caused by mechanical stress in extreme environments are solved. The preparation process of the application is compatible with the existing production line, and has high industrial application value.

The application discloses a preparation method of high-purity-phase battery-grade trimanganese tetraoxide. Pure water is firstly added into a reaction kettle and stirring is started, then ammonium salt and an additive are added and oxidation gas is introduced, then manganese powder is continuously added into the reaction kettle, the pH of the reaction liquid is controlled to be 7-9 during the feeding process, and high-purity-phase battery-grade trimanganese tetraoxide is obtained after treatment. In the application, the manganese powder is continuously added and the pH is controlled to be 7-9 during the whole reaction process, and the two technologies are combined, so that the prepared trimanganese tetraoxide does not contain needle-shaped heterogeneous phases, and pure-phase trimanganese tetraoxide is obtained.

The invention belongs to the technical field of nuclear fuel manufacturing, and particularly relates to an interlayer gas pressure measuring device and method for a double-layer cladding single rod. Comprising a cladding tube inner tube, a cladding tube outer tube, a center hole plug, a single-layer through hole, a lower end plug and a center air channel, the cladding tube outer tube is sleeved with the cladding tube inner tube 1, the lower end plug is installed at the end of the cladding tube outer tube and packages the cladding tube inner tube in the cladding tube outer tube, the center hole plug is installed at the end of the cladding tube inner tube, and the single-layer through hole is formed in the center air channel. A central air passage is formed in the middle of the lower end plug, and a single-layer through hole is formed in the side wall surface of the lower end plug. The sealing structure has the advantages that sealing is reliable, the center hole plug and the end plug are welded, and internal leakage is avoided; 2, non-destructiveness: the outer wall of the cladding tube is not damaged in the measurement process, and the cladding tube can be recycled; and 3, process compatibility: the special-shaped end plug of the interlayer gas detection device can be prepared by using a process end plug without customization.

The invention discloses a low-loss edge coupling structure based on compounding of a trigeminal waveguide and a sub-wavelength grating, and belongs to the field of optoelectronic integration. The trident waveguide is composed of a middle waveguide in the middle and side waveguides on the two sides, the outer side of each side waveguide is provided with a section of sub-wavelength grating, the central axes of the sub-wavelength gratings and the side waveguides incline towards the center by a certain angle, and the two side waveguides and the two sub-wavelength gratings are symmetrically arranged on the two sides of the middle waveguide. According to the structure, the unique trident layout is combined with the sub-wavelength grating, and an external large-spot light field can be effectively converted into a waveguide-supported single-mode field in an adiabatic manner, so that high coupling efficiency, large alignment tolerance and good process compatibility are realized.

The invention relates to the technical field of anti-counterfeit printing materials, and discloses a temperature change anti-counterfeit printing coating which comprises a bearing substrate, a functional layer group and a protective surface layer which are sequentially arranged from bottom to top, the bearing substrate is made of a material adaptive to a target application scene, and the material comprises any one of plastic, paper and metal; the functional layer group at least comprises a temperature change core layer, the temperature change core layer contains at least one thermochromic component, the thermochromic component is selected from a nano modified microencapsulated pigment, and the color change temperature precision of the temperature change core layer is less than or equal to + / -0.3 DEG C. According to the invention, environmental thermal disturbance is resisted in a targeted manner through differentiated structural design, namely, the cavity of the heat insulation layer in the eight-layer structural scheme and the heat insulation sheet work together, so that interference of external temperature fluctuation on the temperature change core layer can be isolated, and the response time is shortened by more than or equal to 50%; according to the five-layer structure scheme, the photothermal conversion efficiency is optimized through 8% of graphene / CNTs composite filler, and rapid conduction and uniform distribution of heat are achieved.

The application discloses a diamond field effect transistor and a preparation method thereof, and the diamond field effect transistor comprises a diamond substrate, a single-crystal diamond epitaxial film, a source electrode, a drain electrode, a stress regulation film and a gate electrode; the single-crystal diamond epitaxial film is arranged on the diamond substrate; the single-crystal diamond epitaxial film is provided with a hydrogen terminal region and an oxygen terminal region, the hydrogen terminal region is a channel region composed of a two-dimensional hole gas conductive layer; the source electrode and the drain electrode are arranged at two ends of the channel region respectively; the stress regulation film is arranged on the source electrode, the drain electrode and the channel region without the source electrode and the drain electrode; and the gate electrode is arranged on the stress regulation film and the oxygen terminal region. The stress regulation film is introduced in the application; based on the stress regulation film, the carrier mobility can be enhanced through stress regulation, and the performance of the conductive channel is not damaged.

The application belongs to the technical field of passive wireless gas sensors, and discloses a passive wireless gas sensor, which comprises a silicon substrate layer, an upper dielectric layer and a lower dielectric layer arranged on the silicon substrate layer, and a polycrystalline silicon conductive layer arranged between the upper dielectric layer and the lower dielectric layer; the gas sensor further comprises a passive wireless gas-sensitive structure unit arranged above the upper dielectric layer and a passive wireless temperature control structure unit arranged below the silicon substrate layer; the passive wireless gas-sensitive structure unit and the passive wireless temperature control structure unit are electrically interconnected; the passive wireless gas-sensitive structure unit comprises a gas-sensitive signal reading coil and a gas-sensitive electrode unit; and the temperature control signal of the passive wireless temperature control structure unit is composed of a temperature control coil and an on-chip switch unit. The application improves the integration and stability of the structure of the gas sensor, has the function of passive wireless temperature control, and further simplifies the complexity of the temperature conditioning circuit; the passive wireless gas sensor has high sensitivity and good stability.