4results about How to "Improve formation quality" patented technology

The invention discloses ZnO-based voltage-sensitive semiconductor ceramic as well as a preparation method and application thereof, and belongs to the technical field of semiconductor ceramic. The ZnO-based voltage-sensitive semiconductor ceramic provided by the invention is prepared from the following components: ZnO, Bi2O3, MnO2, Co3O4, Cr2O3, Sb2O3, Al (NO3) 3, a disulfide bond organic silicon cross-linking agent, a photothermal conversion agent, a photoinitiator, a dispersing agent and a solvent I. The ZnO-based voltage-sensitive semiconductor ceramic has the characteristics of continuous thickness and uniform components, the voltage gradient and the nonlinear coefficient of the ZnO-based voltage-sensitive semiconductor ceramic are superior to those of a traditional product, the parameter drift rate after surge impact is small, and the ZnO-based voltage-sensitive semiconductor ceramic can be applied to high-end application scenes such as vehicle-mounted chargers of new energy automobiles.

A method for forming a semiconductor structure, the method comprising: providing a substrate comprising a first region and a second region, and forming an interlayer dielectric layer having a gate opening on the substrate; forming a shielding layer covering the gate opening of the second region and exposing the gate opening of the first region, the shielding layer occupying the gate opening of the second region, so that in the step of forming a first work function material layer in the gate opening of the first region, the first work function material layer is formed on the shielding layer, and in the process of removing the shielding layer and the first work function material layer on the shielding layer, the removal process window of the first work function material layer of the second region is larger, and it is not easy to have residues, and the removal efficiency is higher, which is beneficial to improve the yield; in addition, the removal process window of the shielding layer is larger, and it is not easy to have residues, the second work function layer can better adjust the threshold voltage of the transistor of the second region, reduce the parasitic capacitance in the transistor of the second region, so that the electrical performance of the semiconductor structure is better.

The invention discloses a high-entropy layered double hydroxide coated flame-retardant smoke suppressant as well as a preparation method and application thereof, the flame-retardant smoke suppressant is a coated flame-retardant smoke suppressant taking a smoke suppressant as a shell layer and a phosphorus flame retardant as a core, and the smoke suppressant and the phosphorus flame retardant are combined in a chemical bond manner through the bonding effect of a silane coupling agent; the smoke suppressant is a high-entropy layered double hydroxide smoke suppressant; and the silane coupling agent is gamma-aminopropyl triethoxy silane. Silanization reaction sites are introduced to the surface of the phosphorus-based flame retardant, HELDH is induced to grow in situ on the surfaces of particles, a stable coating layer is formed, and integrated fixation and synergistic release of the smoke suppression component and the flame-retardant component on the single-particle scale are achieved. In the combustion stage, the HELDH and the pyrolysis product thereof cooperate with phosphorus-based components to promote char formation and capture smoke dust / inhibit volatile matter release, so that the flame retardance, the smoke suppression property and the processing stability are synchronously improved.