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13 results about "Wetting layer" patented technology

In experimental physics, a wetting layer is an initial layer of atoms that is epitaxially grown on a surface upon which self-assembled quantum dots or thin films are created. The atoms composing a wetting layer can be semimetallic elements/compounds (usually InAs in the case of self-assembled quantum dots) or metallic alloys (for thin films). This article refers to the wetting layer used for quantum dot applications. By spraying a surface with layers of these atoms under high temperature, this wetting layer residue is produced on the surface. Wetting layers control the artificial atomic states of the quantum dot for uses in quantum information processing and quantum computation.

An accelerating structure, welding process and cooling system of a particle linear accelerator

This application discloses an acceleration structure, welding process, and cooling system for a particle linear accelerator, relating to the field of particle acceleration equipment technology. The acceleration structure includes a left-shaped component and a right-shaped component, whose joint surfaces are welded together using alloy gaskets. The corresponding first and second acceleration half-cavities inside are assembled to form a complete disk-loaded acceleration cavity. A buffer gap is reserved between the mating edges of the two half-cavities. A vacuum maintenance component is provided above to extract the internal vacuum, and an radio frequency energy feeding component is provided on the outside to feed in external microwave energy. The supporting welding process employs local deposition of a metal barrier layer and a wetting layer, combined with alloy gaskets for temperature-controlled brazing, avoiding softening of the oxygen-free copper substrate during annealing. Furthermore, a semiconductor-based cooling system is provided around the acceleration structure to control heat deformation. This invention effectively avoids extrusion deformation of critical internal structures after welding, reduces the risk of high-frequency arcing, and significantly improves the integration and structural stability of the entire device.
Owner:ANHUI UNIV

Ubm structures, brain-computer interface electrodes, and methods

This disclosure presents a UBM structure, a brain-computer interface electrode, and a method. The UBM structure is used for a brain-computer interface electrode, which includes a flexible electrode layer and a flexible electrode substrate covering the flexible electrode layer. The flexible electrode substrate has an opening exposing the flexible electrode layer, and the UBM structure is disposed within the opening. The UBM structure includes: a first adhesion layer attached to the flexible electrode layer exposed at the bottom of the opening; a wetting layer attached to the adhesion layer; a second adhesion layer attached to the wetting layer; and a surface protective layer attached to the second adhesion layer. The total thickness of the UBM structure is less than or equal to 1 micrometer. The first and second adhesion layers are made of titanium, the wetting layer is made of copper or gold, and the surface protective layer is made of gold or platinum. The technical solution of this disclosure achieves multiple improvements in biocompatibility, electrical performance, mechanical reliability, and process feasibility.
Owner:HEZE QIYUAN (BEIJING) TECH CO LTD

Liquid metal flexible conductor with strain insensitive characteristic and preparation method and application thereof

The invention discloses a liquid metal flexible conductor with a strain insensitive characteristic as well as a preparation method and application of the liquid metal flexible conductor, and relates to the technical field of flexible electronics and liquid metal composite materials. The liquid metal and the metal wetting layer are subjected to alloying reaction on a solid-liquid interface, an intermetallic compound interface layer is generated in situ, and the liquid metal is promoted to spontaneously infiltrate under normal pressure and compactly fill deep pores; meanwhile, a curable elastic high polymer material is adopted to conduct permeation packaging on the conductive composite layer, an elastomer-framework mechanical interlocking structure is formed in pores after curing, and geometric confinement and anti-shearing anchoring of the liquid metal are achieved; in the tensile deformation process, the liquid metal is subjected to fluid redistribution and passage bridging under the constraint of a pore confinement and an elastic body, so that the reconstruction of a conductive path is realized, and the strain-insensitive conductive characteristic of low resistance drift is obtained.
Owner:ANHUI GLANCO NEW MATERIAL TECH CO LTD +1

Infiltration of a fibrous structure comprising a liquid silicon reactive layer

PendingUS20260146005A1Carbide siliconLiquid silicon
A process for manufacturing a part made of ceramic matrix composite material, the process including infiltrating a pre-densified fibrous structure with a molten infiltration composition including silicon, in order to form a ceramic matrix in a residual porosity of the pre-densified fibrous structure, the pre-densified fibrous structure including a pre-densification matrix including a first silicon carbide layer, a reactive layer including a reactive material that contains carbon and is capable of reacting with the silicon in the infiltration composition, the reactive layer covering the first layer, and a molten silicon wetting layer that is made of silicon carbide or carbon and covers the reactive layer.
Owner:SAFRAN CERAMICS SA

Method of manufacturing semiconductor package including forming wetting layer

A method of manufacturing a semiconductor package includes forming a wetting layer on a carrier substrate and forming a first opening and a second opening penetrating the wetting layer; forming a barrier layer and a seed layer on the first opening and the second opening; providing a conductive material to fill the first opening and the second opening; forming a first redistribution structure on the carrier substrate; removing the carrier substrate; mounting a semiconductor chip on the first redistribution structure; forming a molding layer on the first redistribution structure; and forming a second redistribution structure on the molding layer, in which removing the carrier substrate includes removing the barrier layer and the seed layer, the conductive material filling the first opening forms a through electrode, and the conductive material filling the second opening forms a connection pad.
Owner:SAMSUNG ELECTRONICS CO LTD

Diamond piece and copper welding method

The invention discloses a diamond sheet and copper welding method, and relates to the technical field of superhard material and metal welding. The method comprises the following steps: firstly, cleaning a diamond sheet and a copper seat; then plating a nickel layer on the to-be-welded surface of the diamond sheet through a magnetron sputtering process, and embedding the diamond sheet plated with the nickel layer with a copper seat through a welding flux; and finally, the embedded body is placed in a vacuum brazing furnace, diffusion bonding is carried out under a set temperature-pressure curve, and a welding assembly is obtained. The nickel layer is introduced between the diamond and the solder, so that the problems of poor wettability and low bonding strength caused by chemical inertness of the diamond are effectively solved. The nickel layer is used as an excellent wetting layer with the welding flux, so that the bonding strength and the heat-conducting property of a welding interface are remarkably improved.
Owner:CHINA SPALLATION NEUTRON SOURCE SCI CENT +1

Thermal interface and method of obtaining same, method of facilitating heat transfer

The application discloses a thermal interface and a method for obtaining the same, and a method for promoting heat conduction, and belongs to the field of interface heat transfer. The thermal interface comprises a wetting layer and a liquid metal layer, the wetting layer comprises a rough surface, the wetting layer is located between a device and the liquid metal layer, and the rough surface of the wetting layer is in contact with the liquid metal layer. The wetting property between the wetting layer and the liquid metal layer is stronger than the wetting property between the surface of the device and the liquid metal layer, the rough surface of the wetting layer has a microstructure, and when the rough surface of the wetting layer is in contact with the liquid metal layer, the wetting property between the wetting layer and the liquid metal layer can be further improved through capillary effect. The wetting property between the liquid metal and the surface of the device can be effectively improved by using the thermal interface, so that the thermal interface can promote heat conduction between the device and the liquid metal layer, and can reduce the thermal resistance between the interfaces.
Owner:HUAWEI TECH CO LTD

Liquid metal bearing with a sealing structure

The present application relates to the technical field of liquid bearing, and particularly relates to a liquid metal bearing with a sealing structure, which comprises a shaft sleeve, a rotating shaft, liquid metal and a flange, the rotating shaft is rotatably assembled in the shaft sleeve, the rotating shaft and the shaft sleeve are filled with the liquid metal, and the flange is fixedly installed on the shaft sleeve and axially limits the rotating shaft. The flange and the shaft sleeve form a first sealing surface, the flange and the rotating shaft form a second sealing surface, the first sealing surface is sequentially arranged with an anti-wetting layer and a metal layer along a liquid metal leakage channel, the anti-wetting layer can effectively inhibit capillary penetration of the liquid metal along the end surface micro channel, the metal layer can react with the leaked liquid metal and realize plugging and blocking, and the second sealing surface is provided with a liquid locking structure and can hinder the liquid metal from leaking outward. The present application constructs a multi-stage composite sealing system on the bearing sealing interface, effectively blocks the multi-stage leakage path of the liquid metal, and is suitable for high-end precision equipment.
Owner:苏州益腾电子科技有限公司

UBM structure, brain-computer interface electrode and method

The invention provides a UBM structure, a brain-computer interface electrode and a method. The UBM structure is used for a brain-computer interface electrode, the brain-computer interface electrode comprises a flexible electrode layer and a flexible electrode substrate wrapping the flexible electrode layer, the flexible electrode substrate is provided with an opening exposing the flexible electrode layer, the UBM structure is arranged in the opening, and the UBM structure comprises a first adhesion layer, a second adhesion layer and a third adhesion layer, the flexible electrode layer is attached to the flexible electrode layer exposed at the bottom of the opening; the wetting layer is attached to the adhesion layer; the second adhesion layer is adhered to the wetting layer; the surface protection layer is attached to the second adhesion layer; wherein the total thickness of the UBM structure is smaller than or equal to 1 micrometer, the first adhesion layer and the second adhesion layer are made of titanium, the wetting layer is made of copper or gold, and the surface protection layer is made of gold or platinum. According to the technical scheme, multiple improvements of biocompatibility, electrical properties, mechanical reliability and process feasibility are achieved.
Owner:HEZE QIYUAN (BEIJING) TECH CO LTD

Transparent substrate coated with a stack of thin layers

A transparent substrate coated with a stack of thin layers includes, from the substrate, a bottom dielectric coating including a wetting layer, which is, for example, a ZnO-based layer, a silver-based functional metal layer and a top dielectric coating, each dielectric coating including several dielectric layers, wherein the bottom dielectric coating includes a series of at least three dielectric layers having increasing refractive indices, the index difference between the three layers being at least 0.15; the top dielectric coating including a series of at least two layers having decreasing refractive indices. The Ug coefficient is kept at low values (from 0.22 to 0.31 Btu / hft2F) whereas the solar factor SHGC is maximized (from 0.720 to 0.757).
Owner:SAINT GOBAIN VITRAGE SA

Composite film layer for liquid metal bearing and preparation method of composite film layer

The invention discloses a composite film layer for a liquid metal bearing and a preparation method of the composite film layer, and aims to solve the problems of poor liquid metal wetting, high interface thermal resistance, easy substrate corrosion and easy liquid metal overflow of the existing liquid metal bearing. The composite film layer sequentially comprises a middle corrosion-resistant layer, a low-melting-point metal alloy wetting layer, a surface modification layer and surface filling micro gallium oxide-based liquid metal from inside to outside from the liquid metal bearing base body; the preparation method comprises the steps of base material pretreatment, magnetron sputtering deposition of the double film layers, preparation of the modified layer through chemical treatment, liquid metal micro-oxidation and filling. The liquid metal spreading rate can be increased to 95% or above, the interface thermal resistance is reduced to be smaller than or equal to 5 * 10 <-4 > m < 2 > K / W, the matrix corrosion rate is smaller than or equal to 0.01 mm / year, liquid metal overflow is prevented, the service life of a bearing is prolonged by 2-3 times, and the liquid metal coating is suitable for the fields of hydraulic systems, ships and the like.
Owner:HANGZHOU TIANGA TECHNOLOGY CO LTD