The invention discloses a method for preparing a large-scale small-pixel indium gallium arsenide focal plane detector. The method comprises the specific steps as follows: 1) depositing a silicon nitride diffusion mask, 2) opening a diffusion window, 3) performing closing-tube diffusion, 4) growing a P electrode, 5) performing rapid thermal annealing, 6) opening an N groove, 7) depositing the silicon nitride passivation film, 8) opening P and N electrode holes, 9) growing a thickened electrode, 10) metallizing, and 11) growing an indium bump. The invention has the advantages that: 1, the preparation process is simpler, and the technique of first growing the P-region electrode is used to reduce the risk of conduction between the P-region electrode and the N-region InP material caused by lithography deviation and over-etching; 2, the inductively coupled plasma chemical vapor deposition (ICPCVD) technology is used to grow the low-temperature silicon nitride passivation film, and the surface passivation layer of the chip is dense, which reduces the damage caused by the process to the surface of the material and improves the surface passivation effect; and 3, the lithographic growth technique is adopted for the metalized region and the indium bump region to reduce the contact resistance of the device.