Focal plane array detector and preparation method thereof

Abstract

The invention discloses a focal plane array detector and a preparation method thereof. The focal plane array detector comprises an epitaxial layer. The lower surface of the epitaxial layer is providedwith multiple concave first doped regions. The interfaces of the epitaxial layer and the first doped regions are first PN junctions. A pixel element hole is arranged between the adjacent first PN junctions. The lower surface of the epitaxial layer is covered by a first passivation film. The first passivation film arranged on the surface of the first doped regions is provided with first contact holes. The exact middle of the first passivation film arranged on the surface of the pixel element holes is provided with second contact holes. The first contact holes and the second contact holes are filled with first indium bumps and second indium bumps respectively. The first indium bumps and the second indium bumps protrude out of the epitaxial layer. The upper surface of the epitaxial layer isprovided with multiple concave second doped regions. The first doped regions and the second indium bumps are connected in a one-to-one correspondence way. The objective of the invention is to solve the technical problems of crosstalk of the PN junctions of the adjacent pixel elements and small effective utilization area of the pixel elements.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, and more specifically relates to a focal plane array detector and a preparation method thereof. Background technique [0002] Like silicon-based semiconductors, focal plane array detectors are developing in the direction of small size and high integration. However, due to the particularity of the material, its processing difficulty and technical bottleneck have seriously hindered the further development of the focal plane array detector technology. In particular, there is a problem of crosstalk between the PN junctions of adjacent pixels. Traditionally, the PN junctions of adjacent pixels are distributed in a planar manner, that is, adjacent PN junctions are located on the same horizontal plane. In order to prevent adjacent PN junctions from If the spacing is too small, crosstalk is caused, and the spacing between adjacent PN junctions is relatively large, which limits the utilization of...

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Problems solved by technology

[0004] In view of the above defects or improvement needs of the prior art, the present invention provides a focal plane array detector, the purpose of which is to solve the problem that the PN junctions of adjacent pixels are easy to crosstalk, and the effective use area of ​​the pixels is small, which leads to the collection of photoelectric signals. Faint, technical problem with too low signal-to-noise ratio

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