Back-illuminated mercury cadmium telluride long-wave light-guide type infrared flat-panel detector

Abstract

The invention discloses a back-illuminated mercury cadmium telluride long-wave light-guide type infrared flat-panel detector. The detector is characterized by comprising a zinc selenide substrate and a mercury cadmium telluride sheet fixed on the substrate by epoxy glue, wherein one face of the mercury cadmium telluride sheet, which is in contact with the substrate, is provided with an anodized layer and a ZnS anti-reflection layer, and the double-layer passivation surface on the surface of the mercury cadmium telluride sheet forms an a photosensitive element area array and a signal extraction electrode area and a common electrode area which are respectively positioned at both ends of a photosensitive element by photoengraving. The signal extraction electrode area and the common electrode area are both extracted from the back side of a light collection surface, an indium bump grows in a specified area, another indium bump grows on a signal reading circuit board, and the indium bumps are interconnected. An indium bump of a chip electrode and an indium bump of an electrode plate are connected together. An indium layer, an aurum layer and indium bumps are orderly grow on the signal electrode area and the common electrode area, thereby forming the back-illuminated mercury cadmium telluride long-wave light-guide type infrared flat-panel detector.

Description

technical field [0001] The invention relates to photoelectric detector technology, in particular to a back-illuminated mercury cadmium telluride long-wave photoconductive infrared area detector. Background technique [0002] With the development of the application field of infrared devices, the resolution requirements for devices are getting higher and higher, from unit to line array, and now to area array. For use, the area array detector requires the larger the duty cycle, the better, that is to say, within a given area of ​​the area array device, the larger the proportion of the photosensitive surface, the better, and the smaller the interval between the photosensitive surfaces, the better. Since each photosensitive element of the area array has a lead arrangement, it is hoped that the distance between the photosensitive surfaces should be as large as possible. At present, our mercury cadmium telluride long-wave photoconductive infrared area array device adopts the tradit...

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Problems solved by technology

[0003] The purpose of the present invention is to provide a back-illuminated detector structure suitable for mercury cadmium telluride long-wave photoconductive infrared area detectors, and to solve the current requirement that the gap between the photosensitive surfaces of the array is small through the device of the back-illuminated structure. As a result, the problem that the signal leads cannot be arranged

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